JPS60232697A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPS60232697A JPS60232697A JP59087364A JP8736484A JPS60232697A JP S60232697 A JPS60232697 A JP S60232697A JP 59087364 A JP59087364 A JP 59087364A JP 8736484 A JP8736484 A JP 8736484A JP S60232697 A JPS60232697 A JP S60232697A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light absorption
- layer
- thin film
- absorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 230000031700 light absorption Effects 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004813 CaTe Inorganic materials 0.000 description 2
- 229910002616 GeOx Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- -1 Si3N4 Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、平面薄型ディスプレイ・γバイスとし−Ｃ１
文字、記号及び図形等を含む：」ンピュータの出力表示
端末機器その他種々の表示装置に文字、記号及び図形等
の静止画像、動画像の表示手段として利用される薄膜Ｅ
１．−素子に関し、より詳ｔノくは−」ントシストを
向−［さけた薄膜Ｅ ｌ ＃；子に関づる。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a flat thin display/γ vice-C1
Including characters, symbols, figures, etc.: Thin film E used as a means of displaying still images and moving images of characters, symbols, figures, etc. on computer output display terminal equipment and various other display devices.
1. -More details regarding the element are related to the thin film El #; which is directed toward the cytocysts.
従来、この種の薄膜Ｅ Ｌ素子としくは、第１図（ａ＞
、（ｂ）及び（Ｃ）に示り“ものが紹介されており、同
図において、１はガラス基板、２はＩｎ２ ０３ 、
Ｓｎ ０２等から成る透明電極、３は ：Ｙ２ ０３
、１ａ２ ０５等から成る第１誘電体層、４は発光中心
として０．１〜２．Ｏｗｔ％Ｈｎ（又はＴｂ、 Ｓｍ。Conventionally, this type of thin film EL element is shown in Fig. 1 (a>
, (b) and (C). In the figure, 1 is a glass substrate, 2 is In2 03 ,
Transparent electrode made of Sn 02 etc., 3: Y2 03
, 1a2 05, etc., 4 has a luminescence center of 0.1 to 2. Owt%Hn (or Tb, Sm.
Ｃｕ、へｊＬ、Ｂｒ等）をドープしたＺｎＳ （又はＺ
ｎ５ｅ等）の発光層、５はＹ２Ｏ，、Ｔａ２ ｏｓ等か
ら成る第２誘電体層、６はＡｕ等から成る背面電極、及
び７はＣａ ｒｅから成る光吸収層ぐある。ここで、透
明電極２はガラス基板１土に複数帯状に平行配列され、
背面電極６は透明電極２と直交する方向に複数帯状に平
行配列され−でおり、透明電極と背面電極６とが平面図
的に見で交叉した位置がパネルの１絵素に相当する。そ
し−（、電極２．６間にＡＣ電極を印加することにより
、発光層４内に発生した電界によって伝導帯に励起され
且加速されて充分な二［ネルギーを得た電子が、肖接Ｈ
ｎ発光中心を励起し、この励起されたＨｎ発光中゛心が
基底状態に戻る際に黄色の発光を呈する。ZnS (or Z
5 is a second dielectric layer made of Y2O, Ta2 os, etc., 6 is a back electrode made of Au etc., and 7 is a light absorption layer made of Care. Here, the transparent electrodes 2 are arranged in parallel in a plurality of strips on the glass substrate 1,
A plurality of back electrodes 6 are arranged in parallel in a strip shape in a direction perpendicular to the transparent electrode 2, and the position where the transparent electrode and the back electrode 6 intersect in plan view corresponds to one pixel of the panel. By applying an AC electrode between the electrodes 2 and 6, electrons that are excited and accelerated to the conduction band by the electric field generated in the light emitting layer 4 and have obtained sufficient energy are
The Hn luminescent center is excited, and when the excited Hn luminescent center returns to the ground state, it emits yellow light.
そして、第１図（ａ）による蒲股ｌモｌ−索子は、第２
図の曲線ａで示°り通り発光開始電圧を比較的低くする
利点と、電界が加わる領域に前述したような絶縁性の光
吸収層７が存在していないために、絶縁破壊が起こりに
くい構造である利点があるものの、」ントラストが得ら
れないために、表示品位が低トする欠点があった。Then, the Kamamata l mol l-suruko according to Fig. 1(a) is the second
As shown by curve a in the figure, this structure has the advantage of having a relatively low light emission starting voltage and the absence of the above-mentioned insulating light absorption layer 7 in the area where the electric field is applied, making it difficult for dielectric breakdown to occur. Although it has the advantage of being opaque, it has the disadvantage of poor display quality because it does not provide good contrast.
第１図（ｂ）及び（Ｃ）による薄膜Ｅｌ索子は、光吸収
層７がそれぞれ発光層４と第２誘電体層５の間及び第２
誘電体層５と背面Ｎ極６の間に介在していることから、
ガラス基板１側から入射した外部光を吸収し−（、Ｅ
Ｌ素子の二］ントシストを高くづることができる。しか
し、第１図（ｂ）Ｉｃよる薄膜［Ｌ素子は、第２図の曲
線すぐ示１通り、印加電圧に対づる発光輝度の立ち上り
がゆるやかであり、発光輝度を＾くづるためには、印加
電Ｂ−を相当高くしなければならず、また絶縁性の光吸
収層７を介在しているために、高電界を加えた場合に絶
縁破壊を起こしやすい欠点があった。次に、第１図（Ｃ
）による薄膜［Ｌ素子は、第２図の曲線Ｃ′Ｃ示ず通り
、発光開始電圧が高くなる欠点と、前述したと同様な理
由で高電界を加えた場合に絶縁破壊を起こしやすい欠点
があった。In the thin film El probes according to FIGS. 1(b) and 1(C), the light absorbing layer 7 is located between the light emitting layer 4 and the second dielectric layer 5 and between the second dielectric layer 5 and the second dielectric layer 5, respectively.
Since it is interposed between the dielectric layer 5 and the back N-pole 6,
It absorbs the external light incident from the glass substrate 1 side and -(,E
It is possible to increase the number of nitocysts in the L element. However, as shown in the curve in FIG. 2, the luminance of the thin film [L element] based on Ic in FIG. The applied voltage B- must be considerably high, and since the insulating light absorption layer 7 is interposed, there is a drawback that dielectric breakdown is likely to occur when a high electric field is applied. Next, Figure 1 (C
) thin film [L element, as shown in curve C'C in Figure 2, has the disadvantage of high emission starting voltage and the disadvantage of easily causing dielectric breakdown when a high electric field is applied for the same reason as mentioned above. there were.
本発明の目的は、印加電圧−発光輝度特性を良好に維持
することと、絶縁破壊を起こしにくくすることと、コン
トラストを向上することを同時に満足する新規な薄膜［
Ｌ素子を提供づることである。An object of the present invention is to develop a novel thin film that simultaneously maintains good applied voltage-emission brightness characteristics, makes dielectric breakdown less likely to occur, and improves contrast.
The purpose is to provide an L element.
（問題点を解決するための手段〕
このような目的を達成するために、本発明の光吸収層は
ゲルマニウムの低級酸化物を使用覆ると共に、その光吸
収係数を発光層側から背面電極側の膜厚方向に沿って連
続的又は段階的に増大させている。このような光吸収層
によれば、発光層側との界面（後述りる実施例では、第
１光吸収層と耐エツチング性誘電体層との界面）でのガ
ラス基板側の戻り光にお番ブる反射率を小さくすると共
に、光を充分に吸収することができる。(Means for Solving the Problems) In order to achieve the above object, the light absorption layer of the present invention uses a lower oxide of germanium and changes its light absorption coefficient from the light emitting layer side to the back electrode side. It is increased continuously or stepwise along the film thickness direction. According to such a light absorption layer, the interface with the light emitting layer side (in the examples described later, the first light absorption layer and the etching resistance It is possible to reduce the reflectance of the returned light on the glass substrate side (at the interface with the dielectric layer) and to sufficiently absorb light.
このような光吸収層の実ＩＭ態様としては、背面電極Ｆ
のみに形成することが望ましい。As an actual IM mode of such a light absorption layer, the back electrode F
It is desirable to form only the
そして、この光吸収係数αを発光層側から背面電極側の
膜厚方向に沿って連続的又す段階的に小→大の方向に制
御する手段としては、後述でる実施例の蒸着条件におい
て、濡痕を８濡→低温、酸素分圧を大→小（Ｉ！２素ガ
ス導入昂を多→歩）、蒸着速度を低→高の方向にそれぞ
れ変えればよい。As a means for controlling the light absorption coefficient α from small to large continuously or stepwise along the film thickness direction from the light-emitting layer side to the back electrode side, under the vapor deposition conditions of the examples described later, It is sufficient to change the wetting trace from 8 wet to low temperature, the oxygen partial pressure from high to low (I! 2 elemental gas introduction from many to step), and the deposition rate from low to high.
本発明による薄膜ＥＬ素子は、第３図に示すようにアル
ミノシリケートガラス（ｔｅｌ保谷硝子製：ＮΔ−４０
）から成るガラス基板１上に、スズ酸化物を混入ｌノた
酸化インジウムからなる透明電極２（膜厚： ２００Ｇ
人）と、Ｙ２Ｏ３から成る第１誘電体層３（膜厚： ３
０００人）と、活性物質として０．５ｗｔ％のＨｎを添
加したＺｎＳ：Ｈｎ焼結ベレットを素材にした発光層４
（膜厚： ６Ｇ００人）と、Ｙ２Ｏ３から成る第２Ｍ電
体層５（１１９！厚： ３０００人）とを順次真空蒸着
法により成膜した。そして、温度３５０℃。The thin film EL device according to the present invention is made of aluminosilicate glass (NΔ-40
), a transparent electrode 2 made of indium oxide mixed with tin oxide (thickness: 200G)
) and the first dielectric layer 3 (thickness: 3
000 people) and a luminescent layer 4 made of a ZnS:Hn sintered pellet with 0.5 wt% Hn added as an active substance.
(thickness: 6G00) and a second M electric layer 5 (119! thickness: 3000) made of Y2O3 were sequentially formed by vacuum evaporation. And the temperature is 350℃.
ｌ ｘ １０’Ｔｏｒｒの酸素分圧下で（ハ真空にした
後、酸素ガスを導入してＩ Ｘ １０’Ｔｏｒｒの酸素
雰囲気状態にしている。） 、Ｈｆの酸化物から成る耐
」−ツチング性誘電体層８（膜厚： １０００人）を反
応性真空蒸着法により第２誘電体層５上に成膜した。Under an oxygen partial pressure of 1 x 10' Torr (after creating a vacuum, oxygen gas is introduced to create an oxygen atmosphere of 1 x 10' Torr), a resistant dielectric made of Hf oxide is used. A body layer 8 (thickness: 1000 layers) was formed on the second dielectric layer 5 by reactive vacuum deposition.
次に、Ｇｅをターゲットとして電子ビームにより加熱し
゛て、温度３５０℃、ＷＩ素分圧１ ｘ ｉｏ−”ｒｏ
ｒｒ。Next, Ge is heated as a target with an electron beam, at a temperature of 350°C and a WI elemental partial pressure of 1 x io-"ro.
rr.
蒸着速度１人／ Ｓｅｃで反応性真空蒸着し、Ｇｅの低
級酸化物（ＧｅＯｘ ）から成る第１光吸収層９（膜厚
：５００人）を前述した誘電体層８上に成膜し、続いて
、温度３５０℃、酸素分子ｆＥ ３ ｘ １Ｏ−５ｒｏ
ｒｒ、蒸着速度２人／ ｓｅｃぐ反応性真空蒸着し、Ｇ
ｅの低級酸化物（ＧｅＯｘ ）から成る第２光吸収層１
０（膜厚：８００人）を成膜した。第１光吸収ＦＪ９及
び第２光吸収層１０の光吸収係数αは、波長５８０ｎｌ
ｌｌにおいてそれぞれ０．７Ｘ１０５．−’及び３Ｘ１
０５ｃｍ−’であった。A first light absorption layer 9 (thickness: 500 layers) made of a lower oxide of Ge (GeOx) was formed on the dielectric layer 8 by reactive vacuum deposition at a deposition rate of 1 person/sec, and then At a temperature of 350°C, oxygen molecules fE 3 x 1O-5ro
rr, deposition rate 2 people/sec reactive vacuum deposition, G
A second light absorption layer 1 made of a lower oxide (GeOx) of
0 (film thickness: 800 people). The light absorption coefficient α of the first light absorption FJ9 and the second light absorption layer 10 has a wavelength of 580nl.
0.7×105. -' and 3X1
It was 05 cm-'.
次に、Ａｆｔカラ成る背面１１１６ （ＭＷ ： ３０
０ＯＡ ）を第２光吸収層１０上に、そしで、ガラス基
板１表面からの光反射率を低減さ１！るために、Ｈ（ｌ
ｒ２から成る反射防止Ｈ１１（膜厚： １０００人）
をガラス基板１の光取り出１ノ側に、それぞれ真空蒸着
法により成膜した。なお、透明電極２と背面型ｗ１６は
、第１図に示したものと同様、互いに直交するように複
数帯状に配列させた。Next, the back surface 1116 (MW: 30
0OA) on the second light absorption layer 10, and the light reflectance from the surface of the glass substrate 1 is reduced by 1! In order to
Anti-reflection H11 consisting of r2 (film thickness: 1000 people)
A film was formed on the light extraction side of the glass substrate 1 by vacuum evaporation. Note that the transparent electrode 2 and the back type w16 were arranged in a plurality of strips so as to be orthogonal to each other, similar to those shown in FIG.
このように製作した本例の薄膜Ｅ 、Ｌ素子の透明電極
２と背面電極６間に交流電圧（周波数１００ｔｌｚＩＴ
Ｅ弦波）を印加づることにより、ピーク波長５８０ｎｍ
の黄色を発光し、そのときの発光輝度は１４０ｃｄ＃で
あった。そして、２層から成る第１．１２光吸収層９，
１０のシート抵抗は約１０８０／口と比較的低いために
、背面電極６の存在ける部分以外も発光しがちであるこ
とから、り［ｌストーク又はリークのない絵素を形成し
たい場合には、背面電極６をマスクとして第１．第２光
吸収層９．１０を硝酸により選択的エツチングして、第
３図（ｂ）に示づように、背面電極６下のみに第１．第
２光吸収層１２．１３を形成することが望ましい。The thin film E of this example produced in this way was applied with an AC voltage (frequency 100tlzIT) between the transparent electrode 2 and the back electrode 6 of the L element.
By applying the E string wave), the peak wavelength is 580 nm.
It emitted yellow light, and the luminance at that time was 140 cd#. and a 1.12th light absorption layer 9 consisting of two layers,
Since the sheet resistance of No. 10 is relatively low at about 1080/h, it tends to emit light in areas other than the area where the back electrode 6 is present. The first step using the back electrode 6 as a mask. The second light absorbing layer 9.10 is selectively etched with nitric acid, so that the first light absorbing layer 9.10 is etched only under the back electrode 6, as shown in FIG. 3(b). It is desirable to form a second light absorption layer 12.13.
また、前述した実施例において第２光吸収層１０の蒸着
条件に゛つき、例えば、酸素分圧を５ ｘ １０’１０
ｒｒのように高くし、蒸着速度を１人／ ＳｅＣのよう
に低くして、第２の光吸収層１０のシー１−抵抗を１０
９Ω／口のように高くづることにより１、前述した選択
的エツチングを不用とづるごど（すなわち、耐エツチン
グ性誘電体層８を不用とすること）ができる。この場合
、第２光吸収層１０の光吸収係数は２ Ｘ １０５ｃｍ
−’であった。Further, in the above-mentioned embodiment, regarding the vapor deposition conditions of the second light absorption layer 10, for example, the oxygen partial pressure was set to 5 x 10'10
rr and the deposition rate as low as 1 person/SeC, the Sea 1-resistance of the second light absorbing layer 10 is 10
By setting the resistivity as high as 9 Ω/hole, the selective etching mentioned above can be made unnecessary (that is, the etching-resistant dielectric layer 8 can be made unnecessary). In this case, the light absorption coefficient of the second light absorption layer 10 is 2 x 105cm
-' was.
本例の薄膜トし素子のガラス基板１側での反射率特性は
、第５図の曲線「（示づように低く、波長４００〜７０
０ｎｎ＋における平均反射率は４％であった。このよう
に反射率が低いのは、耐エツチング性誘電体層８と第１
光吸収層９（１２）、第１光吸収層９（１２）と第２光
吸収層１０（１３）の各界面での反射率が低いことの他
に、第１光吸収層９（１２）が第２光吸収１１０（１３
）との間で反射波の相！ｊ干渉を起こして光学的バッフ
ァ層の作用をしているためである。The reflectance characteristics of the thin-film reflective element of this example on the glass substrate 1 side are low as shown by the curve "(") in FIG.
The average reflectance at 0nn+ was 4%. This low reflectance is due to the etching-resistant dielectric layer 8 and the first layer.
In addition to the low reflectance at each interface between the light absorption layer 9 (12), the first light absorption layer 9 (12), and the second light absorption layer 10 (13), the first light absorption layer 9 (12) is the second light absorption 110 (13
) phase of reflected waves between! This is because it acts as an optical buffer layer by causing interference.
また、コントラスト特性は、第６図の曲線ｑで示され、
本発明の第１．第２の光吸収層９．１０（又は、１２．
１３）を成膜しない「Ｌ素子の曲線りと比較して大幅に
コントラストを白土させＣいることが分る。Moreover, the contrast characteristics are shown by the curve q in FIG.
The first aspect of the present invention. Second light absorption layer 9.10 (or 12.
13) It can be seen that the contrast is significantly reduced compared to the curve of the L element without film formation.
一方、印加電Ｌ１−輝度特性については、本発明の第１
光吸収Ｐ′１９（１０）及び第２光吸収Ｐ１２（１３）
の比抵抗がそれぞれ１０ Ω−ｃｍ及び１０２Ω−ｃｒ
ｒｒであり、従来のＣａＴｅによる光吸収層のものが１
０８Ω・ｃｍであったのと比較し−Ｃ充分に低いことか
ら、印加電圧が実質的に第１誘電体層４と第２誘電体Ｉ
ｔ！５間に作用し、前述ｔ、 ＩＣ第２図の曲Ｉ！ｉｌ
ａと同様になり、発光開始電圧ら低く維持することがで
き、絶縁破壊を防１することができる。On the other hand, regarding the applied electric current L1-luminance characteristic, the first
Light absorption P'19 (10) and second light absorption P12 (13)
The specific resistance of 10 Ω-cm and 102 Ω-cr, respectively.
rr, and the conventional light absorption layer made of CaTe is 1
Since -C is sufficiently low compared to 0.8Ωcm, the applied voltage is substantially between the first dielectric layer 4 and the second dielectric layer I.
T! 5, and the above-mentioned t, the song I in the IC diagram 2! il
This is similar to a, the emission starting voltage can be maintained low, and dielectric breakdown can be prevented.
以上の実施例では、第１光吸収層９ど第２光吸収層１０
の光吸収係数αを段階的に増大さＶだが、連続的に増大
させでもよい。りなわら、第４図の酸素分圧曲線（ｊ及
び然る速度曲線ｅで示すように、４
酸素分圧を１．！ｌＸｌ０ −＋ ０．５ｘ１０−’Ｔ
ｏｒｒ、蒸着速麿を蒸着速入／ ｓｅｃのように制御し
く、膜厚が増大す°るに従って、光吸収係数αが増大す
る、実質的に１つのＧｃの低級酸化物からなる光吸収層
にしてもよい。本例による光吸収層１ま前実施例と対比
した場合、蒸着時間がＯ〜１０ＩＩｌｉｎ及び１０へ２
０ｍ１ｎの経過時における各部分が第１光吸収層および
第２光吸収層に対応しくいる。また、このような光吸収
係数αの連続的増大づる光吸収層においても前述したと
同様、シート抵抗を高くして選択エツチングを不用、す
なわち耐エツチング性誘電体層８を不用と゛することが
できる（前述した蒸着条件において、例えば酸素分圧を
１．５ｘ １０’・→０．５×１０’Ｔｏｒｒ、 燕５
７４速度叶→２人／５ｅｃ（７）Ｊ：ウニｌｌ’Ｌばよ
い。）。In the above embodiments, the first light absorption layer 9 and the second light absorption layer 10 are
Although the light absorption coefficient α of V is increased stepwise, it may be increased continuously. However, as shown by the oxygen partial pressure curve (j and the corresponding velocity curve e in Fig. 4), the oxygen partial pressure is 1.!l
orr, the evaporation rate is controlled as evaporation rate/sec, and as the film thickness increases, the light absorption coefficient α increases. It's okay. When compared with the previous example, the light absorption layer 1 according to this example has a deposition time of 0 to 10IIlin and 10 to 2
Each portion after 0 m1n corresponds to the first light absorption layer and the second light absorption layer. Further, in the case of such a light absorption layer in which the light absorption coefficient α is continuously increased, as described above, the sheet resistance can be increased to eliminate the need for selective etching, that is, the need for the etching-resistant dielectric layer 8. (Under the above-mentioned deposition conditions, for example, the oxygen partial pressure is 1.5 x 10'・→0.5 x 10'Torr, Swallow 5
74 speed leaf → 2 people/5ec (7) J: Urchin ll'L is fine. ).
本発明は以上の実施例に使用した各物質以外に、ガラス
基板についてはソーダライムガラス等の多成分系ガラス
又は石英ガラス、透明電極については■ｎ２０３若しく
はこれにＷを添加したもの又は５００２にＳｂ、 Ｆ等
を添加したもの、第１誘電体層及び第２誘電体層につい
てはＴａ２０５゜八１２ ０３． Ｈｆ ０２等の酸化
物又はＳｉ３ Ｎ４等の窒化物、発光層についてはｌｎ
ｓ ： Ｃｕ、 ＺｎＳ ： ＡＪｔ（何れも黄緑色発
光） ， Ｚｎ（ Ｓ− Ｓｃ） ： Ｃｕ， Ｚｎ（
Ｓ−Ｓｅ） ：Ｂｒ（何れも緑色発光），７ｎＳ：Ｓ
ｍ（赤色発光） ， ７ｎＳ ： Ｔｂ（緑色発光），
７ｎＳ：Ｔｍ（青色発光）、背面電極については丁ａ，
Ｎｏ， Ｆｃ，Ｎｉ， ＮｉＣｒ等の金屈をそれぞれ
使用し又もよい。また、耐エツヂング性誘電体を使用す
る場合には、第２誘電体層と兼用してもよく、その物質
として＋１ｆ０２以外にｒａ２ ０５等を使用して．ｂ
よい。In addition to the materials used in the above embodiments, the present invention also uses multi-component glass such as soda lime glass or quartz glass for the glass substrate, and n203 or 5002 with W added, or 5002 with W added, or silica glass for the transparent electrode. , F, etc., and for the first dielectric layer and the second dielectric layer, Ta205°81203. Oxides such as Hf02 or nitrides such as Si3N4, ln for the light emitting layer
s: Cu, ZnS: AJt (all emit yellow-green light), Zn (S-Sc): Cu, Zn(
S-Se) :Br (both green light emitting), 7nS:S
m (red emission), 7nS: Tb (green emission),
7nS:Tm (blue light emission), dinga for the back electrode,
Metallic materials such as No., Fc, Ni, and NiCr may also be used. Further, when an etching-resistant dielectric is used, it may also be used as the second dielectric layer, and RA205 or the like may be used instead of +1f02 as the material. b
good.
以上の通り、本発明によれば、：」ントラストを向上さ
せ、かつ印加電圧一発光綽度特性を良好に雑持して、絶
縁破壊を防止することができる。As described above, according to the present invention, dielectric breakdown can be prevented by improving the contrast and maintaining the applied voltage/emission brightness characteristics well.
第１図は従来の薄膜［Ｌ素子を示Ｊ断面図、第２図は従
来の薄膜Ｆ１−素子における印加電圧一発光輝度特性図
、第３図は本発明の薄膜ＥＬ素子を示す断面図、第４図
は本発明に係る酸素分圧特性及び蒸着速度特性を示す図
、第５図は本発明の簿膜Ｅ Ｌ素子にＪ３ける反射率特
性図、及び第６図は本発明の蒲膜［Ｌ素子におけるコン
トラスト特性図である。
１・・・ガラス基板、２・・・透明電極、３・・・第１
誘電体層、４・・・発光層、５・・・第２誘電体層、６
・・・背面電極、８・・・耐エッチング誘電体層、９．
１２・・・第１光吸収層、１０．１３・・・第２誘電体
層
！ｉ；２ｋ’Ｊ
１１ｐ １１０唱一【Ｉテヨ（イ１＝危邊１１月第４図
ＵＩＵＩＵ（ｍｉｎノ
薫１９！１間
第５図
澹 へ
手 続 補 ■ 書 （自発）
１、事件の表示 昭和５９年特許願第８７３６４号２、
発明の名称 薄膜Ｅ Ｌ素子
３、補正をする者
事イ′１との関係 特許出願人
住所 東京都新宿区西新宿１丁目１３７！１２号〒１ｆ
３０ 置 ０３（３４８）１２２１ホ ヤ ガラス
名称 株式会社 保 谷 硝 子
スズキ テツォ −７１、
（１） 明細鍬の「発明の詳細な説明」の欄５、補正の
内容
（１） 明細＠２頁１８行に「透明電極」とあるを１透
明電極２」ど補正する。
（２） 明細書２頁２０行〜３頁１行に「ＡＣ電極」ど
あるをｆ’ Ａ Ｃ電圧」と補ｉ［する。
以上
１、事件の表示 昭和５９年特許願第８７３６４ｇ２、
発明の名称 薄膜Ｅ Ｌ素子
３、補正をする者
事件との関係 特許出願人
住所 東京都新宿区中落合２１目７番５号〒１６１ 置
０３（９５２）１１５１名称 ホ − ヤ 株 式
会 社
（１）明細書の「発明の詳細な説明」の欄（２）明１１
Ｉ書の「図面の簡単な説明」の欄５、補正の内容
（１）明細書第２頁１５行及び第９頁８行に［ＣａＴｅ
Ｊとあるを［ＣｄＴｅＪと訂正する。
（２）明Ｉｌｌ書第１２頁６行に「第２誘電体層」とあ
るを「第２光吸収層」と訂正する。
以上
手 続 補 正 Ｆｔ （自発）
１、事件の表示 昭和５９年特許願第８７３６４′、〕
２、発明の名称 薄膜Ｅ Ｌ素子
３、補ｉｆ’をする看
事件との関係 特許出願人
住所 東京都新宿区中落合２丁ロア番５号〒１６１ Ｔ
Ｅ Ｌ ０３’（９５２）１１５１ ”’名称 ホ
− ヤ 株 式 会 ネ１
４、補正の対象
（１）明１Ｉｌｒｔ！の「発明の詳細な説明」の欄５、
補正の内容
（１）明細内６頁１２行ｉＪ、ＩＧ行目に［（ＧｅＯＸ
） Ｊとあるを［（ＧｃＯｘ： Ｏ＜：ｘ ＜ ２ ）
Ｉと訂正する。
（２）明細書７頁１０行〜１１行目に「ピーク波長５８
０ｎｍので／１色をＲ″Ａ−シ、１どあるを［ピーク波
長５８０ｎｍで黄色に発光し、］と訂１［する。
（３）明細書８頁１６行〜１８１）目に［低いことの他
に、第１光吸収層９（１２）が第２光吸収Ｆ４１０ （
１３）どの開で反Ｑ１波の相！Ｕ ”Ｆ渉を起こして光
学的バッフ１層の作用を、１とあるを「低く、これらの
光吸収層が有効に光を吸収ｌど訂■−する。
、Ｌｌ上FIG. 1 is a sectional view showing a conventional thin film [L element]; FIG. 2 is a characteristic diagram of applied voltage versus luminance in a conventional thin film F1-element; FIG. 3 is a sectional view showing a thin film EL element of the present invention; FIG. 4 is a diagram showing the oxygen partial pressure characteristics and vapor deposition rate characteristics according to the present invention, FIG. 5 is a diagram showing the reflectance characteristics in J3 of the film EL element of the present invention, and FIG. 6 is a diagram showing the film film EL element of the present invention. [It is a contrast characteristic diagram in an L element. 1... Glass substrate, 2... Transparent electrode, 3... First
Dielectric layer, 4... Light emitting layer, 5... Second dielectric layer, 6
... Back electrode, 8... Etching-resistant dielectric layer, 9.
12...First light absorption layer, 10.13...Second dielectric layer! i;2k'J 11p 110 chant [I Teyo (I 1 = Crisis November 4th figure UIUIU (min no Kaoru 19! 1 time 5th figure 澹 to procedure supplement ■ (self-motivated) 1. Display of incident 1988 Patent Application No. 873642,
Name of the invention Thin film EL element 3, relationship with the person making the correction A'1 Patent applicant address 1-137!12 Nishi-Shinjuku, Shinjuku-ku, Tokyo 1f
30 Place 03 (348) 1221 Hoya Glass Name Hoya Glass Co., Ltd. Suzuki Tetsuo -71, (1) Column 5 of “Detailed Description of the Invention” of the specification, content of amendment (1) Details @ page 2 18 Correct the line "transparent electrode" to "1 transparent electrode 2". (2) From page 2, line 20 to page 3, line 1 of the specification, replace "AC electrode" with "f' AC voltage". Above 1. Indication of the case: 1982 Patent Application No. 87364g2,
Title of the invention: Thin film EL element 3, relationship with the amended case Patent applicant address: 21-7-5 Nakaochiai, Shinjuku-ku, Tokyo Address: 03 (952) 1151, 161 Name: Ho-ya Co., Ltd.
Company (1) “Detailed description of the invention” column (2) Mei 11 of the specification
Column 5 of “Brief Description of Drawings” in Book I, contents of amendment (1) [CaTe
Correct the word J to [CdTeJ. (2) On page 12, line 6 of Meiji Ill., the phrase "second dielectric layer" is corrected to "second light absorption layer." Amendment of the above procedure Ft (voluntary) 1. Indication of the case Patent Application No. 87364', filed in 1982.]
2. Name of the invention Thin film EL element 3. Relationship with the case of supplementary if' Patent applicant address No. 5, Nakaochiai 2-chome, Shinjuku-ku, Tokyo 161 T
E L 03'(952)1151 ''Name H
-Ya Stock Company Ne1 4. Subject of amendment (1) Ming 1 Ilrt! Column 5 of “Detailed Description of the Invention”
Contents of correction (1) [(GeOX
) J [(GcOx: O<:x<2)
Correct it to I. (2) On page 7 of the specification, lines 10 to 11, “Peak wavelength 58
0 nm, so/1 color is R''A-shi, 1 is corrected as [emits yellow light with a peak wavelength of 580 nm]. (3) Specification page 8, lines 16 to 181) In addition, the first light absorption layer 9 (12) has a second light absorption layer F410 (
13) At what point is the anti-Q1 wave phase? The effect of the optical buffer layer 1 is reduced by causing U ``F interference, and these light absorption layers effectively absorb light.
Claims (1)
射光を光吸収づ°る光吸収層とを透明電極と背面電極と
の間に介在して成る薄膜Ｅ１−素子において、前記光吸
収層がゲルンニウム、の低級酸化物であり、かつ前記光
吸収層の光吸収係数が前記発光層側から前記背面電極側
の膜厚方向に沿って連続的又は段階的に増大しているこ
とを特徴とする薄膜Ｅ１−素子。 （２、特許請求の範囲第１項において、前記光吸収層が
前記背面電極］・のみに形成されでいることを特徴とす
る薄膜ＥＬ素子。(1) In a thin film E1-element comprising a light-emitting layer that emits FL light when a voltage is applied and a light-absorbing layer that absorbs incident light, which are interposed between a transparent electrode and a back electrode, The absorption layer is a lower oxide of germanium, and the light absorption coefficient of the light absorption layer increases continuously or stepwise along the film thickness direction from the light emitting layer side to the back electrode side. Characteristic thin film E1-element. (2. The thin film EL device according to claim 1, wherein the light absorption layer is formed only on the back electrode].
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59087364A JPS60232697A (en) | 1984-04-30 | 1984-04-30 | Thin film el element |
| US06/728,595 US4634639A (en) | 1984-04-30 | 1985-04-29 | Electroluminescent panel having a light absorption layer of germanium oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59087364A JPS60232697A (en) | 1984-04-30 | 1984-04-30 | Thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60232697A true JPS60232697A (en) | 1985-11-19 |
| JPS6315718B2 JPS6315718B2 (en) | 1988-04-06 |
Family
ID=13912835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59087364A Granted JPS60232697A (en) | 1984-04-30 | 1984-04-30 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60232697A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113595A (en) * | 1984-06-28 | 1986-01-21 | シャープ株式会社 | Thin film el element |
| WO1988000382A1 (en) * | 1986-07-03 | 1988-01-14 | Kabushiki Kaisha Komatsu Seisakusho | Color display device |
| JPS6310494A (en) * | 1986-07-01 | 1988-01-18 | 株式会社小糸製作所 | Construction of thin film el device |
-
1984
- 1984-04-30 JP JP59087364A patent/JPS60232697A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113595A (en) * | 1984-06-28 | 1986-01-21 | シャープ株式会社 | Thin film el element |
| JPS6316878B2 (en) * | 1984-06-28 | 1988-04-11 | Sharp Kk | |
| JPS6310494A (en) * | 1986-07-01 | 1988-01-18 | 株式会社小糸製作所 | Construction of thin film el device |
| WO1988000382A1 (en) * | 1986-07-03 | 1988-01-14 | Kabushiki Kaisha Komatsu Seisakusho | Color display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6315718B2 (en) | 1988-04-06 |
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