JPS60230993A - Copper pyrophosphate solution for anisotropic plating - Google Patents

Copper pyrophosphate solution for anisotropic plating

Info

Publication number
JPS60230993A
JPS60230993A JP8787684A JP8787684A JPS60230993A JP S60230993 A JPS60230993 A JP S60230993A JP 8787684 A JP8787684 A JP 8787684A JP 8787684 A JP8787684 A JP 8787684A JP S60230993 A JPS60230993 A JP S60230993A
Authority
JP
Japan
Prior art keywords
copper
plating
pyrophosphate
concn
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8787684A
Other languages
Japanese (ja)
Inventor
Yoshihiko Suzuki
鈴木 喜彦
Ryohei Koyama
亮平 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP8787684A priority Critical patent/JPS60230993A/en
Publication of JPS60230993A publication Critical patent/JPS60230993A/en
Pending legal-status Critical Current

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  • Electroplating And Plating Baths Therefor (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PURPOSE:To obtain a copper pyrophosphate soln. capable of giving plating with high anisotropy and favorable surface properties by specifying the concn. of copper ions, the ratio of the concn. of pyrophosphate ions to the concn. of copper ions, and the concn. of ammonia. CONSTITUTION:Potassium pyrophosphate and copper pyrophosphate are added to a copper pyrophosphate plating soln., and an aqueous ammonia soln. is further added to obtain a copper pyrophosphate soln. for anisotropic plating having 25- 38g/l concn. of copper ions [Cu<2+>], 6.5-7.5 weight ratio of the concn. of pyrophosphate ions [P2O7<4->] to the concn. of copper ions [Cu<2+>], and 0.05-0.20mol/l concn. of ammonia [NH3]. The soln. is adjusted to about 8.2-9.0pH with KOH, polyphosphoric acid or the like, and additives and a stabilizer are added to the soln. as required.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、異方性メッキ用ビロリン酸銅溶液に関するも
のである。ここでいう異方性にとは、あるメッキ面に対
してそれと平行な方向へのメッキの伸びAに対して垂直
な方向へのメッキの伸びBを示したもので、弐に=B/
Aで表わされる。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a copper birophosphate solution for anisotropic plating. The anisotropy here refers to the elongation A of plating in a direction parallel to a certain plating surface, and the elongation B of plating in a direction perpendicular to it.
It is represented by A.

〔従来の技術〕[Conventional technology]

従来から精密な印刷回路基板をつくる場合フォトリング
ラフィがよく用いられてきたが特にアディティブ法を用
いることによって高配線密度の回路基板ができ、かなり
有利な製造法であるとされてきている。
Photolithography has traditionally been frequently used to produce precision printed circuit boards, but additive methods in particular have been shown to be a highly advantageous manufacturing method, as they can produce circuit boards with high wiring density.

しかしながらこの製造法を用いた印刷回路基板では、異
方性にの値が/を越えないことから厚くて微細なパター
ンを製造することが困難であった。
However, in printed circuit boards using this manufacturing method, it is difficult to manufacture thick and fine patterns because the anisotropy value does not exceed /.

例えば、ある線状に並んだパターンにメッキを行う場合
、メッキ前のパターンの線間隔が/θθμm′であり、
それに夕θμmの厚さのメッキをつければ異方性Kが7
だから、メッキ幅も508mずつ広がり線間でショート
してしまう。一方、本発明者らはすでに特1幀昭タ3−
/乙66/グ号の中でメッキの電流密度を高くすること
でKの値を大きくすることを明らかにした。そのために
微細な印刷回路基板を厚くメッキすることができるよう
になった。しかしながらさらに微細なパターンの印刷回
路基板をつくるにはKの値をより高くしかも表面性をさ
らに良くする事が望ましい。
For example, when plating a pattern arranged in a line, the line spacing of the pattern before plating is /θθμm′,
If a plating with a thickness of θμm is applied to it, the anisotropy K will be 7.
Therefore, the plating width also increases by 508m, resulting in short circuits between the lines. On the other hand, the present inventors have already developed
/Otsu 66/G revealed that the value of K can be increased by increasing the current density of plating. This has made it possible to plate fine printed circuit boards thickly. However, in order to produce printed circuit boards with even finer patterns, it is desirable to increase the value of K and further improve the surface properties.

そこで本発明者らは、ビロリン酸銅溶液の組成条件につ
いて詳細に検討した結果、よりKの値が高くかつ表面性
のよいメッキができる組成物を見い出した。
Therefore, the present inventors conducted a detailed study on the compositional conditions of the copper birophosphate solution, and as a result, they discovered a composition that has a higher K value and allows plating with good surface properties.

〔構成〕〔composition〕

即ち、本発明は、 少なくとも、 (N銅イオン濃度(Cu” ) 23〜3 g ?/L
(B)ピロリン酸イオン濃度(P20ニー) /銅イオ
ン濃度[:Cu” 〕重量比乙、j〜2.夕IC)アン
モニア濃度[NH3]θ、θj〜θ0.2.θmol/
lからなる異方性メッキ用ピロリン酸銅溶液である。
That is, the present invention provides at least (N copper ion concentration (Cu") 23 to 3 g?/L
(B) Pyrophosphate ion concentration (P20 knee) / copper ion concentration [:Cu”] weight ratio B, j ~ 2. evening IC) ammonia concentration [NH3] θ, θj ~ θ0.2. θmol/
This is a copper pyrophosphate solution for anisotropic plating consisting of:

さらに説明を加えると、まずこの組成物をつくるには市
販のピロリン酸鋼メッキ液にピロリン酸カリウムとビロ
リン酸鋼を加え、更にアンモニア水を加え前記組成条件
に調節するか、またはピロリン酸カリウムとビロリン酸
銅を水に所定tg解させ、更にアンモニア水を加える方
法でもよい。
To explain further, to make this composition, first add potassium pyrophosphate and steel pyrophosphate to a commercially available steel pyrophosphate plating solution, and then add ammonia water to adjust the composition to the above conditions, or add potassium pyrophosphate and steel to the above composition. A method may also be used in which copper birophosphate is dissolved in water at a predetermined tg and then aqueous ammonia is added.

尚、必要に応じて通常使用されている添加剤、安定剤を
加えてもよい。
Incidentally, commonly used additives and stabilizers may be added as necessary.

本発明においては、ビロリン酸イオンp、oニー の銅
イオンCu”十に対する重量濃度の比(P)の値、即が
、6.J′〜7.51好ましくは6.ざ〜7.グである
のが望ましくP比が低くなると内部応力が強くかつ展性
の著しく低い銅ができ、また、P比が7.夕より高くな
るとメッキ鋼層表面に樹木状の異常突起物ができる。
In the present invention, the value of the ratio (P) of the weight concentration of birophosphate ion p, ony to copper ion Cu'1 is 6.J' to 7.51, preferably 6.J' to 7.5g. It is desirable that the P ratio be lower, and copper with strong internal stress and extremely low malleability will be produced, and if the P ratio is higher than 7.0, tree-like abnormal protrusions will be formed on the surface of the plated steel layer.

また鋼イオン濃度[Cu”均は、2 t f/l〜3♂
2A、好ましくは26〜35f/lが望ましく銅イオン
濃度が、2 s t/lより低くなるとメッキ銅表面に
樹木状の異常突起物ができ、また、銅イオン濃度が3 
/ f/lより高くなると内部応力が強くかつ展性の著
しく低い銅ができしかも場合によってはメッキ表面に樹
木状の異常突起物ができる。
In addition, the steel ion concentration [Cu” average is 2tf/l~3♂
2A, preferably 26 to 35 f/l. If the copper ion concentration is lower than 2 s t/l, tree-like abnormal protrusions will appear on the surface of the plated copper, and if the copper ion concentration is lower than 3.
When the value is higher than /f/l, copper with strong internal stress and extremely low malleability is produced, and in some cases, tree-like abnormal protrusions are formed on the plating surface.

さらに、アンモニアイオン濃度(NH3)はθ、θj〜
θ、2θmO鳳/1 、好ましくはO6θ♂〜θ、 /
 t molAが望ましく、アンモニア濃度がθ、θj
mol/lより低くなるとKの値が低くなり異方性が弱
まり、アンモニア濃度がθ、2θmol/lより高くな
ると銅の展性が著しく劣化し、内部応力もかなり高くな
る。
Furthermore, the ammonia ion concentration (NH3) is θ, θj~
θ, 2θmOho/1, preferably O6θ♂~θ, /
t molA is desirable, and the ammonia concentration is θ, θj
When the ammonia concentration is lower than mol/l, the value of K is low and the anisotropy is weakened, and when the ammonia concentration is higher than θ and 2θ mol/l, the malleability of copper is significantly deteriorated and the internal stress is also considerably high.

以上の様な組成条件におい′Cは、pHはざ、2〜9、
θの間になるはずであるが、もしもpHがこれより低い
時はKOH1高い時はポリリン酸或いはクエン酸や各メ
ッキ液メーカーから市販されているpH調整剤で♂1.
2〜9.θ、好ましくはpH♂、y〜♂、lに調節する
Under the above composition conditions, 'C' has a pH range of 2 to 9;
It should be between θ, but if the pH is lower than this, if the KOH1 is high, use polyphosphoric acid, citric acid, or a pH adjuster commercially available from each plating solution manufacturer.
2-9. θ, preferably pH ♂, y to ♂, 1.

カソードの電流密度は3〜jθA/d m”、好ましく
はJ−−,20ν噌がある。Kの値を高くする為には、
カソードの電流密度は高い程良い。上限はヤケ現象によ
り決定される。
The current density of the cathode is 3~jθA/d m", preferably J--, 20ν. In order to increase the value of K,
The higher the current density of the cathode, the better. The upper limit is determined by the fading phenomenon.

攪拌は必要で、空気攪拌でもポンプ攪拌でも、カソード
揺動でもまたそれらを組み合わせても良いが、例えば空
気攪拌ならそのエアー流量はθ、θj〜コ、θθMシψ
・分(単位メッキ層液面積当りに7分間に流す空気量の
標準状態での体積)が好ましい。またメッキ中の浴温は
一般に行われている様に50〜60℃が好ましい。
Agitation is necessary, and air agitation, pump agitation, cathode rocking, or a combination of these may be used. For example, in air agitation, the air flow rate is θ, θj~ko, θθM ψ
Minutes (the volume under standard conditions of the amount of air flowing in 7 minutes per unit plating layer liquid area) is preferable. Further, the bath temperature during plating is preferably 50 to 60°C, as is generally practiced.

メッキの下地とじては、導電性があれば何んでもよく−
例えば金属なら銅−ニッケル、アルミニウム等が考えら
れる。
Anything can be used as the base for plating as long as it is conductive.
For example, for metals, copper-nickel, aluminum, etc. can be considered.

メッキ装置等については、一般に行われているものなら
特に問題はない。
As for the plating equipment, there is no particular problem as long as it is a commonly used one.

以下に本発明の態様を一層明確にする為に、実施例を挙
げて説明する。
EXAMPLES Below, in order to further clarify aspects of the present invention, examples will be given and explained.

実施例7〜6 絶縁性ポリイミドフィルム(デュポン社製[カプトン]
、厚み2254m)上に、jμm厚銅箔をボスチック社
製フェノール樹脂系接着剤(商品名: XA−J−gQ
−4t)を使って接着する。次にイーストマンゴダック
社製ネガ型レジスト[マイクロレジス)74t7−//
θcst jを、乾燥後レジスト厚が3〜j /Jmに
なる様に銅面に塗布し、プリベーク後、回路パターンマ
スクを通して高圧水銀ランプで露光し、専用の現像液(
イーストマンコダック社製、マイクロレジストデベロッ
パー)及びリンス液(イーストマンコダック社製、マイ
クロレジストリンス)で現像し、ポストベークして、回
路パターン状にレジストを形成した。続いて、塩化第コ
鉄、tOq6溶液により銅箔をエツチング除去した。こ
の結果、膜厚jμm、幅/3θμm、配列ピッテコθθ
μmの線状パターンが得られた。
Examples 7-6 Insulating polyimide film (manufactured by DuPont [Kapton]
, thickness 2254 m), and a jμm thick copper foil using Bostik's phenolic resin adhesive (product name: XA-J-gQ).
-4t) to adhere. Next, a negative resist [Microresist] 74t7-// manufactured by Eastmango Duck Co., Ltd.
θcst j was applied to the copper surface so that the resist thickness after drying was 3~j/Jm, and after prebaking, it was exposed to light with a high-pressure mercury lamp through a circuit pattern mask, and a special developer (
The resist was developed with a rinsing solution (Microresist Developer, manufactured by Eastman Kodak Company) and a rinsing liquid (Microresist Rinse, manufactured by Eastman Kodak Company), and post-baked to form a resist in the shape of a circuit pattern. Subsequently, the copper foil was removed by etching with a ferrous chloride and tOq6 solution. As a result, film thickness jμm, width/3θμm, array pitteco θθ
A linear pattern of μm was obtained.

ついで、バーショウ村田社製ピロリン酸鋼メッキ液に、
ピロリン酸カリ、ピロリン酸鋼及び水を適量加えて、そ
の組成が銅イオン濃度3 tl tll、P=7になる
様調節し、さらに濃度J1のアンモア水をアンモニアに
換算してθ、θJ’molの濃度になるまで加えたのち
、さらにこの調合されたメッキ液のpHが♂、2になる
までKOHタチ溶液又はバーショウ材用社製pH調整液
を加えたメッキ液を用いて、上記の線状銅パターンを電
流密度タ、♂シ冒、空気攪拌θ、/ M3/M2分、浴
IMs s ℃の条件でメッキを行った。この結果得ら
れた銅線状パターンの幅、厚みからに=/、ワ?であり
、茜い異方性が発揮された。さらに表/に示す銅イオン
濃度、P、アンモニア濃度を変え、さらにpHを調節し
たメッキ浴を用い、前記と同様の銅線状パターンに同一
の条件でメッキを行った。得られた結果を表7に示す。
Next, add Barshaw Murata's pyrophosphate steel plating solution.
Add appropriate amounts of potassium pyrophosphate, steel pyrophosphate, and water to adjust the composition to a copper ion concentration of 3 tl tll, P = 7, and further convert ammonia water with a concentration of J1 to ammonia to obtain θ, θJ'mol. After adding the plating solution to a concentration of Plating was carried out on a shaped copper pattern under the following conditions: current density T, ♂ irradiation, air stirring θ, /M3/M2 minutes, bath IMs s °C. From the width and thickness of the copper wire pattern obtained as a result, =/, Wa? , and a deep anisotropy was exhibited. Furthermore, using a plating bath in which the copper ion concentration, P, and ammonia concentration shown in Table 1 were changed and the pH was adjusted, plating was performed on the same copper wire pattern as described above under the same conditions. The results obtained are shown in Table 7.

表 −/ 注、(1)表面性:良好とはメッキ面全体が緻密で光沢
があり、樹木状異常突起物がな いこと。
Table -/ Notes: (1) Surface quality: Good means that the entire plated surface is dense and glossy, and there are no tree-like abnormal projections.

(2)鍋物性:内部応力が強くて基板からはがれたり展
性が著しく低下してない状 態が良好な状態である。
(2) Physical properties of the pot: A good condition is one in which the internal stress is strong and there is no peeling off from the substrate or significant decrease in malleability.

(3)ダクタリテイ;ソート状試験片を左右に7回づつ
りθ0折り曲げるのを 7回として、何回折りまげ たら、銅層にキレンが入る かを、示しており、展性を 示すパラメータの7つであ る。
(3) Dactality: It indicates how many times a sorted test piece must be bent at θ0 seven times to the left and right, and how many times it has to be bent to cause cracks to enter the copper layer. It is one.

比較例/〜j 絶縁性基板上に、jμm厚銅箔をボスチック社製[XA
−J−gg−gJフェノール樹脂系接着剤を使って接着
する。次にイーストマンゴダック社製ネガ型レジスト[
マイクロレジスト7’17−//θcst Jを、乾燥
後、レジスト厚が3〜!;l1mになる様に銅面に塗布
し、プリベーク後、回路パターンマスクを通して高圧水
銀ランプで露光し、専用の現像液及びリンス液で現像し
、ポストベークして回路パターン状にレジストを形成す
る。続いて塩化第λ鉄jθIIG液により銅箔をエツチ
ング除去した。
Comparative Example/~j A copper foil with a thickness of j μm was placed on an insulating substrate using Bostic Co., Ltd. [XA
-J-gg-gJ Adhere using phenolic resin adhesive. Next, use Eastmango Duck's negative resist [
After drying the microresist 7'17-//θcst J, the resist thickness is 3~! ; After pre-baking, it is applied to the copper surface to a thickness of 11 m, exposed to light with a high-pressure mercury lamp through a circuit pattern mask, developed with a special developer and rinse solution, and post-baked to form a resist in the shape of a circuit pattern. Subsequently, the copper foil was removed by etching with a ferric chloride jθIIG solution.

この結果、膜厚311m、幅/30μm、配列ピッチ2
θθμmの線状パターンが得られた。次にバーショウ村
山社製ピロリン酸銅メッキ液に、ピロリン酸カリ、ピロ
リン酸鋼及び水を適量加えて、その組成が銅イオン濃度
34tff/l、P比=6.θになる様調節し、さらに
濃度、2ざ憾のアンモア水を適量加え、アンモニアに換
算してθ、θJ’ mol/lの濃度に調節し、さらに
調合されたメッキ液のp)lがざ、7になる様KOHタ
チ溶液又はバーショウ村山社製pH:A整液を加えた。
As a result, the film thickness was 311 m, the width was 30 μm, and the arrangement pitch was 2.
A linear pattern of θθμm was obtained. Next, appropriate amounts of potassium pyrophosphate, steel pyrophosphate, and water were added to a copper pyrophosphate plating solution manufactured by Versho Murayama Co., Ltd. to obtain a composition with a copper ion concentration of 34 tff/l and a P ratio of 6. θ, then add an appropriate amount of ammonia water at a concentration of 2, adjust the concentration to θ, θJ' mol/l in terms of ammonia, and then adjust the plating solution's p)l ratio to , 7. KOH Tati solution or Versho Murayama's pH:A adjustment solution was added.

この様なメッキ液を用いて、前記の線状鋼パターンを電
流密度31A/d背、空気攪拌θ、 / M”7M”分
、浴温j夕℃の条件化でメッキを行った。この結果得ら
れた銅線状パターンの幅・厚みからKを計算したところ
/、? lltであり、異方性高いメッキが行われたが
、できた調時性が表−2に示す如くであった。
Using such a plating solution, the above-mentioned linear steel pattern was plated under the following conditions: current density 31 A/d, air agitation θ/M "7M" minutes, and bath temperature J/C. When K was calculated from the width and thickness of the copper wire pattern obtained as a result, ? llt, and highly anisotropic plating was performed, but the timing performance was as shown in Table 2.

(以下余白) 表 −ノ 〔効果〕 本発明のピロリン酸鋼溶液を用いると、異方性Kが高く
、さらにメッキ物の表面性の優れたものができ、これを
利用して従来よりも厚い微細なパターンの印刷回路基板
を製造することが可能となつた。
(Leaving space below) Table - No [Effects] Using the pyrophosphate steel solution of the present invention, it is possible to produce plated products with high anisotropy K and excellent surface properties. It has become possible to manufacture printed circuit boards with fine patterns.

特許出願人 旭化成工業株式会社Patent applicant: Asahi Kasei Industries, Ltd.

Claims (1)

【特許請求の範囲】 少なくとも、 囚銅イオン濃度[:CLl”) 、2 、t 〜3♂1
/1.1B)ピロリン酸イオン濃度CP2Oニー ) 
/銅イオン濃度〔C,2+ )重喰比乙、j〜7.j、
(C)アンモニア濃度(NHs:lθ、OS〜θ、2θ
mol/l。 からなる異方性メッキ用ビロリン酸銅俗液
[Claims] At least, the captive copper ion concentration [:CLl''), 2, t ~ 3♂1
/1.1B) Pyrophosphate ion concentration CP2Oney)
/Copper ion concentration [C, 2+] weight ratio, j~7. j,
(C) Ammonia concentration (NHs: lθ, OS~θ, 2θ
mol/l. Copper birophosphate solution for anisotropic plating consisting of
JP8787684A 1984-05-02 1984-05-02 Copper pyrophosphate solution for anisotropic plating Pending JPS60230993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8787684A JPS60230993A (en) 1984-05-02 1984-05-02 Copper pyrophosphate solution for anisotropic plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8787684A JPS60230993A (en) 1984-05-02 1984-05-02 Copper pyrophosphate solution for anisotropic plating

Publications (1)

Publication Number Publication Date
JPS60230993A true JPS60230993A (en) 1985-11-16

Family

ID=13927065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8787684A Pending JPS60230993A (en) 1984-05-02 1984-05-02 Copper pyrophosphate solution for anisotropic plating

Country Status (1)

Country Link
JP (1) JPS60230993A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737898A (en) * 1980-08-20 1982-03-02 Asahi Chemical Ind Thick film fine pattern
JPS5791590A (en) * 1980-11-28 1982-06-07 Asahi Chemical Ind Method of producing thick film fine pattern conductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737898A (en) * 1980-08-20 1982-03-02 Asahi Chemical Ind Thick film fine pattern
JPS5791590A (en) * 1980-11-28 1982-06-07 Asahi Chemical Ind Method of producing thick film fine pattern conductor

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