JPS60224246A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve the yield rate, by fixing a shield electrode at a DC potential, so that the effect of the short between the shield electrode and a wiring by an accident does not affect the entire device. CONSTITUTION:Shield electrodes 29 are provided only on a wiring and constituent transistors T1-T3, which are subject to external light and external electric fields. Their potentials are kept at the potentials corresponding to the driving conditions of wirings and elements. The shield electrode is not provided on a grounding bus line 30 and the wirings, which are not subject to the external effects. The wiring for connecting the shield electrode and the wiring under the shield wiring are arranged so that they are not crossed each other. Therefore, even though the shield electrode is short-circuited with the wirings, the entire address circuit does not become inoperative. The semiconductor device having this structure can be obtained in this way.

Description

Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to a shield for a semiconductor device used in a memory device including a data address section and a matrix section addressed by the data address section, an active matrix type display device, etc. This invention relates to an improvement in a device having a structure having electrodes.

(b), Technical Background In the above-mentioned semiconductor devices, especially active matrix display devices, the shift registers in the data address section are affected by external light, light emission from the display medium, and the drive voltage of the display medium. In order to cause malfunctions, semiconductor devices that are susceptible to such problems require optical and electrical shielding in the data address section. For this reason, there is a need for a structure in which the shield can be completely removed and the yield will not be lowered due to the provision of the shield.

(C), Prior Art and Problems FIG. 1 is a plan view showing the structure of a semiconductor device including a data address section and a matrix section addressed by the data address section according to a conventional example.

In the figure, 1 indicates a matrix section, which is constructed by arranging memory cells and display cells two-dimensionally, and 2 and 3 indicate X and Y data address circuits, respectively, which are composed of multi-stage shift registers and the like.

4.5 is a shield electrode that covers the entire data address circuits 2 and 3, respectively, via an insulating layer, and maintains them at ground potential.

However, with this structure, if a short circuit occurs between the wiring under the shield electrode and the shield electrode, the signal line or power line will be grounded, causing the entire data address circuit to malfunction, significantly reducing manufacturing yield. It will be lowered to

FIG. 2 is a sectional view showing a conventional electrode structure.

In the figure, 21 is a substrate made of silicon or the like, 22 is an insulating layer made of silicon dioxide, etc., and 23 to 27 are wiring electrodes, for example,
23 is a power supply pass line, 24 is a source electrode of a transistor, 25 is a gate electrode of a transistor, 26 is a drain electrode of a transistor, 27 is a signal pass line, and 28 is a shield electrode.

As shown in the figure, it is considered that a short circuit between the shield electrode and the wiring occurred at A-H. For example, if a short circuit occurs at point A, the power supply path line 23 becomes ground potential, and all elements connected to it become inoperable. Also, if there is a short circuit at E, is it a signal path line? 7 becomes the ground potential (generally "L" level), and the element no longer operates.

(d)1 Objective of the invention The objective of the present invention is to eliminate the above-mentioned drawbacks of the prior art,
An object of the present invention is to provide a semiconductor device having a structure that prevents the entire data address circuit from malfunctioning even if a short circuit occurs between a shield electrode and a wiring.

(e) 0 Structure of the Invention According to the present invention, a shield electrode divided into island shapes is provided on a data address circuit via an insulating layer, and the shield electrode is connected to a wiring line that does not require electrical shielding. This is achieved by a semiconductor device whose electrodes are fixed at a DC potential.

According to the present invention, by fixing the shield electrode to a direct current potential, even if the shield electrode and the wiring should be short-circuited, the effect of the short-circuit will not affect the entire device, and an improvement in yield can be expected.

(f) 1 Embodiment of the Invention FIGS. 3 and 4 schematically show a sectional view taken along the line A-A and a plan view showing an electrode structure according to the invention. In the following figures, the same numbers as in FIG. 2 indicate the same objects.

In the figure, 23a and 23b are power supply path lines, 27a
.

27b is a signal path line, 29a and 29b are island-shaped shield electrodes, 30 is a ground path line, and T1 to T3 are transistors which are constituent elements.

As shown in the figure, the shield electrode is provided only above the wiring and component transistors that may be affected by external light and external electric fields, and their potential is determined by the driving conditions of each wiring and element. Keep the potential at the appropriate level.

Also, shield electrodes are not provided on the ground pass line 30 or on wiring that is not affected by external influences, and the wiring connecting the shield electrode and the lower wiring are prevented from intersecting as much as possible.

Effects of the Invention As described in detail above, according to the present invention, a semiconductor device having a structure that prevents the entire data address circuit from malfunctioning even if there is a short circuit between the shield electrode and the wiring can be obtained. be able to.

[Brief explanation of drawings]

FIG. 1 is a plan view showing the structure of a semiconductor device including a conventional data address section and a matrix section addressed by the data address section, FIG. 2 is a cross-sectional view showing an electrode structure according to the conventional example, and FIGS. The figures are a cross-sectional view and a plan view showing the electrode structure according to the present invention. In the figure, 1 is the matrix section, 2.3 is X,
Y data address circuit, 4.5 is a shield electrode, 21 is a substrate, 22 is an insulating layer, 23 to 27 are wiring lines, 23 is a power supply path line, 24 is a source electrode of a transistor, 25 is a gate electrode of a transistor, 26 is a transistor 27 is a signal path line, 2B is a shield electrode,
29 is an island-shaped shield electrode, 30 is a ground pass line, T
I''''Ts indicates a transistor which is a constituent element. Military j question number 2 Hayabusa 3A question 4

Claims (1)

[Claims] A semiconductor device characterized in that a shield electrode divided into islands is provided on a data address circuit via an insulating layer, and the shield electrode is fixed to a DC potential of a wiring electrode that does not require electrical shielding. .