JPS60223121A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS60223121A
JPS60223121A JP59078868A JP7886884A JPS60223121A JP S60223121 A JPS60223121 A JP S60223121A JP 59078868 A JP59078868 A JP 59078868A JP 7886884 A JP7886884 A JP 7886884A JP S60223121 A JPS60223121 A JP S60223121A
Authority
JP
Japan
Prior art keywords
water
organic film
soluble
resist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59078868A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0244139B2 (en:Method
Inventor
Masaru Sasago
勝 笹子
Masataka Endo
政孝 遠藤
Kenichi Takeyama
竹山　健一
Noboru Nomura
登 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59078868A priority Critical patent/JPS60223121A/ja
Priority to US06/724,304 priority patent/US4745042A/en
Publication of JPS60223121A publication Critical patent/JPS60223121A/ja
Publication of JPH0244139B2 publication Critical patent/JPH0244139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
    • G03F7/0215—Natural gums; Proteins, e.g. gelatins; Macromolecular carbohydrates, e.g. cellulose; Polyvinyl alcohol and derivatives thereof, e.g. polyvinylacetals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59078868A 1984-04-19 1984-04-19 パタ−ン形成方法 Granted JPS60223121A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59078868A JPS60223121A (ja) 1984-04-19 1984-04-19 パタ−ン形成方法
US06/724,304 US4745042A (en) 1984-04-19 1985-04-17 Water-soluble photopolymer and method of forming pattern by use of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59078868A JPS60223121A (ja) 1984-04-19 1984-04-19 パタ−ン形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61041246A Division JPS61179440A (ja) 1986-02-26 1986-02-26 パターン形成方法

Publications (2)

Publication Number Publication Date
JPS60223121A true JPS60223121A (ja) 1985-11-07
JPH0244139B2 JPH0244139B2 (en:Method) 1990-10-02

Family

ID=13673796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59078868A Granted JPS60223121A (ja) 1984-04-19 1984-04-19 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS60223121A (en:Method)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130263A (en) * 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
JPH04226013A (ja) * 1990-04-18 1992-08-14 Internatl Business Mach Corp <Ibm> イメージの露光装置及び露光方法
EP0803777A1 (en) * 1996-04-25 1997-10-29 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic resist
US5830623A (en) * 1995-09-12 1998-11-03 Kabushiki Kaisha Toshiba Pattern lithography method
JP2007017950A (ja) * 2005-06-07 2007-01-25 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたパターン形成方法
US7687223B2 (en) 2004-11-01 2010-03-30 Nissan Chemical Industries, Ltd. Underlayer coating forming composition for lithography containing cyclodextrin compound
US8916327B2 (en) 2003-10-30 2014-12-23 Nissan Chemical Industries, Ltd. Underlayer coating forming composition containing dextrin ester compound

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955019A (ja) * 1982-09-24 1984-03-29 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS59168637A (ja) * 1983-03-15 1984-09-22 Nec Corp 微細パタ−ンの形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955019A (ja) * 1982-09-24 1984-03-29 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS59168637A (ja) * 1983-03-15 1984-09-22 Nec Corp 微細パタ−ンの形成方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130263A (en) * 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
JPH04226013A (ja) * 1990-04-18 1992-08-14 Internatl Business Mach Corp <Ibm> イメージの露光装置及び露光方法
US5830623A (en) * 1995-09-12 1998-11-03 Kabushiki Kaisha Toshiba Pattern lithography method
EP0803777A1 (en) * 1996-04-25 1997-10-29 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic resist
US8916327B2 (en) 2003-10-30 2014-12-23 Nissan Chemical Industries, Ltd. Underlayer coating forming composition containing dextrin ester compound
US7687223B2 (en) 2004-11-01 2010-03-30 Nissan Chemical Industries, Ltd. Underlayer coating forming composition for lithography containing cyclodextrin compound
JP2007017950A (ja) * 2005-06-07 2007-01-25 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたパターン形成方法

Also Published As

Publication number Publication date
JPH0244139B2 (en:Method) 1990-10-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term