JPS60223121A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS60223121A JPS60223121A JP59078868A JP7886884A JPS60223121A JP S60223121 A JPS60223121 A JP S60223121A JP 59078868 A JP59078868 A JP 59078868A JP 7886884 A JP7886884 A JP 7886884A JP S60223121 A JPS60223121 A JP S60223121A
- Authority
- JP
- Japan
- Prior art keywords
- water
- organic film
- soluble
- resist
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 150000004676 glycans Chemical class 0.000 claims abstract description 5
- 229920001282 polysaccharide Polymers 0.000 claims abstract description 5
- 239000005017 polysaccharide Substances 0.000 claims abstract description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 3
- 102000004169 proteins and genes Human genes 0.000 claims abstract description 3
- 108090000623 proteins and genes Proteins 0.000 claims abstract description 3
- 230000005855 radiation Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- -1 diazide compound Chemical class 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 229920002085 Dialdehyde starch Polymers 0.000 claims description 4
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims 1
- 238000004090 dissolution Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 239000000981 basic dye Substances 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000005416 organic matter Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 53
- 229920001218 Pullulan Polymers 0.000 description 14
- 239000004373 Pullulan Substances 0.000 description 14
- 235000019423 pullulan Nutrition 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 12
- 239000000975 dye Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- 229920002472 Starch Polymers 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000008107 starch Substances 0.000 description 4
- 235000019698 starch Nutrition 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical compound N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical class CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000002791 glucosyl group Chemical group C1([C@H](O)[C@@H](O)[C@H](O)[C@H](O1)CO)* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
- G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
- G03F7/0215—Natural gums; Proteins, e.g. gelatins; Macromolecular carbohydrates, e.g. cellulose; Polyvinyl alcohol and derivatives thereof, e.g. polyvinylacetals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59078868A JPS60223121A (ja) | 1984-04-19 | 1984-04-19 | パタ−ン形成方法 |
| US06/724,304 US4745042A (en) | 1984-04-19 | 1985-04-17 | Water-soluble photopolymer and method of forming pattern by use of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59078868A JPS60223121A (ja) | 1984-04-19 | 1984-04-19 | パタ−ン形成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61041246A Division JPS61179440A (ja) | 1986-02-26 | 1986-02-26 | パターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60223121A true JPS60223121A (ja) | 1985-11-07 |
| JPH0244139B2 JPH0244139B2 (enrdf_load_stackoverflow) | 1990-10-02 |
Family
ID=13673796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59078868A Granted JPS60223121A (ja) | 1984-04-19 | 1984-04-19 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60223121A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
| JPH04226013A (ja) * | 1990-04-18 | 1992-08-14 | Internatl Business Mach Corp <Ibm> | イメージの露光装置及び露光方法 |
| EP0803777A1 (en) * | 1996-04-25 | 1997-10-29 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
| US5830623A (en) * | 1995-09-12 | 1998-11-03 | Kabushiki Kaisha Toshiba | Pattern lithography method |
| JP2007017950A (ja) * | 2005-06-07 | 2007-01-25 | Shin Etsu Chem Co Ltd | レジスト下層膜材料並びにそれを用いたパターン形成方法 |
| US7687223B2 (en) | 2004-11-01 | 2010-03-30 | Nissan Chemical Industries, Ltd. | Underlayer coating forming composition for lithography containing cyclodextrin compound |
| US8916327B2 (en) | 2003-10-30 | 2014-12-23 | Nissan Chemical Industries, Ltd. | Underlayer coating forming composition containing dextrin ester compound |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955019A (ja) * | 1982-09-24 | 1984-03-29 | Oki Electric Ind Co Ltd | 微細パタ−ン形成方法 |
| JPS59168637A (ja) * | 1983-03-15 | 1984-09-22 | Nec Corp | 微細パタ−ンの形成方法 |
-
1984
- 1984-04-19 JP JP59078868A patent/JPS60223121A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955019A (ja) * | 1982-09-24 | 1984-03-29 | Oki Electric Ind Co Ltd | 微細パタ−ン形成方法 |
| JPS59168637A (ja) * | 1983-03-15 | 1984-09-22 | Nec Corp | 微細パタ−ンの形成方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
| JPH04226013A (ja) * | 1990-04-18 | 1992-08-14 | Internatl Business Mach Corp <Ibm> | イメージの露光装置及び露光方法 |
| US5830623A (en) * | 1995-09-12 | 1998-11-03 | Kabushiki Kaisha Toshiba | Pattern lithography method |
| EP0803777A1 (en) * | 1996-04-25 | 1997-10-29 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
| US8916327B2 (en) | 2003-10-30 | 2014-12-23 | Nissan Chemical Industries, Ltd. | Underlayer coating forming composition containing dextrin ester compound |
| US7687223B2 (en) | 2004-11-01 | 2010-03-30 | Nissan Chemical Industries, Ltd. | Underlayer coating forming composition for lithography containing cyclodextrin compound |
| JP2007017950A (ja) * | 2005-06-07 | 2007-01-25 | Shin Etsu Chem Co Ltd | レジスト下層膜材料並びにそれを用いたパターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0244139B2 (enrdf_load_stackoverflow) | 1990-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |