JPS60217624A - Manufacture of semiconductor wafer - Google Patents

Manufacture of semiconductor wafer

Info

Publication number
JPS60217624A
JPS60217624A JP7264684A JP7264684A JPS60217624A JP S60217624 A JPS60217624 A JP S60217624A JP 7264684 A JP7264684 A JP 7264684A JP 7264684 A JP7264684 A JP 7264684A JP S60217624 A JPS60217624 A JP S60217624A
Authority
JP
Japan
Prior art keywords
wafer
mark
grinding blade
identification symbol
discriminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7264684A
Other languages
Japanese (ja)
Inventor
Nobushi Suzuki
鈴木　悦四
Masaaki Kuniyoshi
国吉　真暁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7264684A priority Critical patent/JPS60217624A/en
Publication of JPS60217624A publication Critical patent/JPS60217624A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To check to cause deterioration of quality of a wafer main body when a discriminating mark is to be carved by a method wherein the discriminating mark is formed in a bar code type to the peripheral edge part of the wafer according to a rotating grinding blade. CONSTITUTION:An orientation flat 2 is formed on one edge part of a wafer 1, and a slope 3 is formed using a grinding whestone. Then, a discriminating mark 5 is carved in a bar code type along the longitudinal direction of the slope 3 using an extremely thin grinding blade 4. The grinding blade 4 thereof is supported coaxially by a flange 6. The wafer 1 is displayed timely in an arrow mark 8 direction and in an arrow mark 9 direction, and the grinding blade 4 performing a rotation is made to come in contact with the slope 3 to carve the discriminating mark 5. The discriminating mark 5 thereof is consisting of a combination of parallel straight lines, and the discriminating mark is indicated according to the intervals between the straight lines.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体ウェーハ（以下、単にウェーハと呼ぶ
。）の品種を識別するための記号の刻設を容易に行うこ
とができる半導体ウェーッ・製造方法に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing semiconductor wafers (hereinafter simply referred to as wafers) in which symbols for identifying the type of semiconductor wafers can be easily engraved thereon. Regarding the method.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

近時、半導体製品の大量生産にともなって、原素材とし
ての例えば単結晶シリコン（８ｉ　）ウェーッ・の生産
量も厖大なものとなっている。とれらウェーハには１品
質管理を目的として各品種ごとに識別記号が刻設されて
いる。たとえば、第１図はレーザ光による識別記号の刻
設を示している。この方法は、まずウェーハ（Ａ）の周
縁部に傾斜面（Ｂ）を形成し、＝の傾斜面（Ｂ）にレー
ザ光（Ｃ）を照射して、所定の識別記号を刻設するよう
になっている。In recent years, with the mass production of semiconductor products, the amount of raw material produced, such as single crystal silicon (8i) wafers, has also increased enormously. Tora wafers are engraved with identification symbols for each type of wafer for the purpose of quality control. For example, FIG. 1 shows the engraving of identification symbols by laser light. This method first forms an inclined surface (B) on the peripheral edge of the wafer (A), and irradiates the inclined surface (B) with a laser beam (C) to engrave a predetermined identification symbol. It has become.

しかるに、上述の方法におばては、レーザ光照射時に、
溶融したウェーハ（Ａ）のスプラッシュ（飛沫）（Ｄ）
が、周囲にへ散し、集積回路パターンが形成される表面
に付着してしまう。また、ウェーハ（Ａ）の表面に付着
したスブラッシ５−（Ｄ）が他工程において不確定的に
脱落して塵埃となシ。However, when applying the above method, during laser beam irradiation,
Splash of melted wafer (A) (D)
is dispersed into the surrounding environment and deposits on the surface on which the integrated circuit pattern is formed. In addition, the brush 5-(D) attached to the surface of the wafer (A) may fall off indefinitely in other processes and become dust.

製品歩留低下の一因となる。さらに、刻印部位が溶融物
によシ盛り土シ、この盛シ上り（Ｅ）がつ・エーハ（Ａ
）の上面基準のアライメントに支障を生じる。また、他
の方法として、ウェー・・にポンチによシ識別記号を打
刻することも行われているが。This causes a decrease in product yield. Furthermore, if the engraved area is filled with molten material, this embankment rises (E) and Eha (A).
) will cause trouble in alignment with the top surface reference. Another method is to stamp an identification symbol on the wafer with a punch.

打刻時に機械的衝撃が付加されるので１局所的損壊に基
因する品質低下を惹起する虞があシ、信頼性の点で好ま
しい刻印方法ではなかった。Since a mechanical shock is applied during stamping, there is a risk of quality deterioration due to local damage, and this is not a desirable stamping method from the viewpoint of reliability.

〔発明の目的〕[Purpose of the invention]

本発明は、上記事情を参酌してなされたもので。 The present invention has been made in consideration of the above circumstances.

識別記号の刻設時にウェーッ１本体の品質低下を招くこ
とがない半導体ウェーハ製造方法を提供することを目的
とする。It is an object of the present invention to provide a semiconductor wafer manufacturing method that does not cause deterioration in the quality of the wafer 1 body when an identification symbol is engraved.

〔発明の概要〕[Summary of the invention]

ウェーハの端縁部に回転中の研削ブレードによシ、識別
記号をバーコード状に形設するようにしたものである。An identification symbol is formed in the shape of a bar code on the edge of the wafer by a rotating grinding blade.

〔発明の実施例〕[Embodiments of the invention]

以下１本発明の一実施例を図面を参照して詳述する。 An embodiment of the present invention will be described below in detail with reference to the drawings.

第２図は、この実施例の半導体ウェーッ・製造方法によ
り得られた単結晶シリコンからなるウェーハ（１）ヲ示
している。このウェーッ・（１）は、円柱状の単結晶イ
ンゴットより、例えば内周刃、ワイヤソー等によシ所定
の厚みにスライ゛シングした後、上下両主面をラッピン
グ及びポリシングによシ研磨加工したものである。この
ウェーッ・（１）の一端部には、オリエンテーションフ
ラット（２）が形成されている。しかして、このウェー
ハ（１）の一方の主面のオリエンテーションフラット（
２）部位に、研削砥石を用いて傾斜面（３）を形成する
。ついで、第３図及び第４図に示すように、傾斜面（３
）の長手方向に沿って、厚さ５０μｍ前後の極薄の研削
ブレード（４）を用いて、バーコード状に識別記号（５
）を刻設する。この研削ブレード（４）は１例えばダイ
シング加工にも使われる円環状のものであって、フラン
ジ（６）によシ同軸に支持されている。このフランジ（
６）は、スピンドル（７）に取付けられ、高速で回転駆
動されるようになっている。そうして、ウェーハ（１）
は１図示せぬ保持装置に保持されていて、適時に、矢印
（８）方向及び第４図矢印（９）方向（第３図紙面垂直
方向）にウェーハを変イ立させ、回転中の研削プレート
責４）を傾斜面（３）に接触させ識別記号（５）を刻設
するようになっている。この識別記号（５）は、平行な
直線の組合せからなっていて、これら直線間の間隔によ
シ識別記号を表示するようになっている。この間隔の設
定は、上記保持装置に内蔵されているＮＣ（Ｎｕｍｅｒ
ｉｃａｌ　Ｃｏｎｔｒｏｌ　；数値制御）機構によシ行
われる。ついで、識別記号（５）刻設後は、水洗して研
削屑を除去して乾燥する。つぎに１次工程にて電気光学
的に識別記号（５）が読み取られ、所定の処理が施され
る。FIG. 2 shows a wafer (1) made of single crystal silicon obtained by the semiconductor wafer manufacturing method of this embodiment. This wedge (1) is obtained by slicing a cylindrical single crystal ingot to a predetermined thickness using, for example, an inner peripheral blade or a wire saw, and then polishing both the upper and lower main surfaces by lapping and polishing. It is something. An orientation flat (2) is formed at one end of this wedge (1). However, the orientation flat (
2) Form an inclined surface (3) at the site using a grinding wheel. Next, as shown in FIGS. 3 and 4, the inclined surface (3
), using an ultra-thin grinding blade (4) with a thickness of around 50 μm, mark an identification symbol (5) in the shape of a barcode.
) is engraved. This grinding blade (4) is an annular blade used for dicing, for example, and is coaxially supported by a flange (6). This flange (
6) is attached to a spindle (7) and is driven to rotate at high speed. Then, wafer (1)
The wafer is held by a holding device (not shown in Figure 1), and the wafer is rotated at appropriate times in the direction of arrow (8) and in the direction of arrow (9) in Figure 4 (perpendicular to the plane of the paper in Figure 3), and the wafer is ground during rotation. The plate 4) is brought into contact with the inclined surface (3) and an identification symbol (5) is engraved thereon. This identification symbol (5) is made up of a combination of parallel straight lines, and the identification symbol is displayed according to the spacing between these straight lines. This interval can be set using the NC (Number) built into the holding device.
This is done by a numerical control mechanism. Then, after the identification mark (5) is engraved, it is washed with water to remove grinding debris and dried. Next, in the first step, the identification symbol (5) is electro-optically read and predetermined processing is performed.

とのように１本実施例のウェーハ製造方法は。The wafer manufacturing method of this embodiment is as follows.

識別記号（５）を研削ブレードにょシ刻設するようにし
たので、ウェーハ（１）の本体部分の品質を損うことが
ない。また、識別記号（５）近傍に盛シ上シを生じるこ
とがないので、他工程におけるアライメント精度に悪影
響を及ばずことがない。さらに、識別記号（５）を傾斜
面（３）に形成しているので、刻設加工及び読み取シが
容易となる。Since the identification symbol (5) is engraved on the grinding blade, the quality of the main body of the wafer (1) is not impaired. In addition, since no embossment occurs in the vicinity of the identification symbol (5), alignment accuracy in other processes is not adversely affected. Furthermore, since the identification symbol (5) is formed on the inclined surface (3), engraving and reading are facilitated.

なお５上記実施例においては２識別記号を傾斜面上に刻
設しているが、直接、ウェーハの主面端部上に形成して
もよい。また、識別記号刻設位置は、ウェーハの端縁部
であればどこでもよく、オリエンテーションフラット（
２）部位近傍に限定することはない。さらに、識別記号
の刻設を研磨工程の後でなく、研磨前において行うよう
にしてもよい。さらに、識別記号を刻設する代シに、櫛
歯状に穿設するようにしてもよい。In the above embodiment, the identification symbol 2 is carved on the inclined surface, but it may be formed directly on the edge of the main surface of the wafer. In addition, the identification symbol can be engraved anywhere on the edge of the wafer, and can be placed on the orientation flat (
2) It is not limited to the vicinity of the site. Furthermore, the identification symbol may be engraved before the polishing process instead of after the polishing process. Furthermore, the identification symbol may be engraved with a comb-shaped perforation.

〔発明の効果〕〔Effect of the invention〕

本発明の半導体ウェーハ製造方法は、ウェーハの品種を
識別するための記号をバーコード状に研削ブレードにょ
多形成するようにしたので、ウェーハの本体部分の品質
を損う虞がなくなる。さらに、識別記号近傍に盛シ上少
を生じることがないので、他工程におけるアライメント
精度に悪Ｊ＃／響を及ぼすことがない。In the semiconductor wafer manufacturing method of the present invention, symbols for identifying the type of wafer are formed on the grinding blade in the form of a bar code, so there is no risk of degrading the quality of the main body of the wafer. Furthermore, since there is no rise or fall in the vicinity of the identification symbol, alignment accuracy in other processes is not adversely affected.

【図面の簡単な説明】 第１図は従来の識別記号刻設方法の説明図、第２図は本
発明の一実施例の半導体ウェーハ製造方法によシ得られ
たウェーハの平面図、第３図及び第４図はそれぞれ本発
明の一実施例の半導体ウェーハの製造方法に用いられる
装置の要部圧ｍ１図及び要部側面図である。 （１）：ウェーハ、　（４）　：研削ブレード。 （５）：識別記号。[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is an explanatory diagram of a conventional identification symbol engraving method, FIG. 2 is a plan view of a wafer obtained by a semiconductor wafer manufacturing method according to an embodiment of the present invention, and FIG. 4 are a pressure m1 diagram and a side view of a main part of an apparatus used in a semiconductor wafer manufacturing method according to an embodiment of the present invention, respectively. (1): Wafer, (4): Grinding blade. (5): Identification symbol.

Claims (1)

【特許請求の範囲】[Claims] 単結晶インゴットよシ半導体ウェー７１を切出す工程と
、上記半導体ウェーハの端縁部に回転中の研削ブレード
によシ上記半導体つエーノ＼の識別記号をバーコード状
に形設する工程とを具備することを特徴とする半導体ウ
ェー７１製造方法。The method includes a step of cutting out a semiconductor wafer 71 from a single crystal ingot, and a step of forming an identification symbol of the semiconductor wafer 71 in the shape of a bar code on the edge of the semiconductor wafer using a rotating grinding blade. A method for manufacturing a semiconductor wafer 71, characterized in that:
JP7264684A 1984-04-13 1984-04-13 Manufacture of semiconductor wafer Pending JPS60217624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7264684A JPS60217624A (en) 1984-04-13 1984-04-13 Manufacture of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7264684A JPS60217624A (en) 1984-04-13 1984-04-13 Manufacture of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS60217624A true JPS60217624A (en) 1985-10-31

Family

ID=13495355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7264684A Pending JPS60217624A (en) 1984-04-13 1984-04-13 Manufacture of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS60217624A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0308134A2 (en) * 1987-09-14 1989-03-22 Speedfam Co., Ltd. Specular machining apparatus for peripheral edge portion of wafer
WO1993009565A1 (en) * 1991-10-29 1993-05-13 Komatsu Electronic Metals Co., Ltd. Apparatus for and method of manufacturing semiconductor wafer
US5698833A (en) * 1996-04-15 1997-12-16 United Parcel Service Of America, Inc. Omnidirectional barcode locator
US6420792B1 (en) * 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0308134A2 (en) * 1987-09-14 1989-03-22 Speedfam Co., Ltd. Specular machining apparatus for peripheral edge portion of wafer
WO1993009565A1 (en) * 1991-10-29 1993-05-13 Komatsu Electronic Metals Co., Ltd. Apparatus for and method of manufacturing semiconductor wafer
US5698833A (en) * 1996-04-15 1997-12-16 United Parcel Service Of America, Inc. Omnidirectional barcode locator
US6420792B1 (en) * 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6710364B2 (en) 1999-09-24 2004-03-23 Texas Instruments Incorporated Semiconductor wafer edge marking

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