JPS60213028A - 終点検出方法 - Google Patents

終点検出方法

Info

Publication number
JPS60213028A
JPS60213028A JP6949084A JP6949084A JPS60213028A JP S60213028 A JPS60213028 A JP S60213028A JP 6949084 A JP6949084 A JP 6949084A JP 6949084 A JP6949084 A JP 6949084A JP S60213028 A JPS60213028 A JP S60213028A
Authority
JP
Japan
Prior art keywords
time
level
period
etching
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6949084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139649B2 (cg-RX-API-DMAC7.html
Inventor
Masatoshi Tahira
昌俊 田平
Kenji Inoue
井上　憲二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainichi Nippon Cables Ltd
Original Assignee
Dainichi Nippon Cables Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainichi Nippon Cables Ltd filed Critical Dainichi Nippon Cables Ltd
Priority to JP6949084A priority Critical patent/JPS60213028A/ja
Publication of JPS60213028A publication Critical patent/JPS60213028A/ja
Publication of JPH0139649B2 publication Critical patent/JPH0139649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP6949084A 1984-04-06 1984-04-06 終点検出方法 Granted JPS60213028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6949084A JPS60213028A (ja) 1984-04-06 1984-04-06 終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6949084A JPS60213028A (ja) 1984-04-06 1984-04-06 終点検出方法

Publications (2)

Publication Number Publication Date
JPS60213028A true JPS60213028A (ja) 1985-10-25
JPH0139649B2 JPH0139649B2 (cg-RX-API-DMAC7.html) 1989-08-22

Family

ID=13404197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6949084A Granted JPS60213028A (ja) 1984-04-06 1984-04-06 終点検出方法

Country Status (1)

Country Link
JP (1) JPS60213028A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107919273A (zh) * 2017-11-20 2018-04-17 上海陛通半导体能源科技股份有限公司 一种刻蚀终点确定方法、晶圆刻蚀方法以及刻蚀系统

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107919273A (zh) * 2017-11-20 2018-04-17 上海陛通半导体能源科技股份有限公司 一种刻蚀终点确定方法、晶圆刻蚀方法以及刻蚀系统

Also Published As

Publication number Publication date
JPH0139649B2 (cg-RX-API-DMAC7.html) 1989-08-22

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