JPS60212731A - Liquid crystal photomask - Google Patents

Liquid crystal photomask

Info

Publication number
JPS60212731A
JPS60212731A JP59067665A JP6766584A JPS60212731A JP S60212731 A JPS60212731 A JP S60212731A JP 59067665 A JP59067665 A JP 59067665A JP 6766584 A JP6766584 A JP 6766584A JP S60212731 A JPS60212731 A JP S60212731A
Authority
JP
Japan
Prior art keywords
liquid crystal
electrode
pattern
photomask
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59067665A
Other languages
Japanese (ja)
Inventor
Nobuaki Kabuto
展明 甲
Kozo Sato
剛三 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59067665A priority Critical patent/JPS60212731A/en
Publication of JPS60212731A publication Critical patent/JPS60212731A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To shorten the time required from a design to a finish of an LSI, etc. by varying (erasing) a pattern of a photomask whose pattern is limited, by an electric signal, in the same way as a photomask designed by a user for manufacturing a mask ROM and a gate array. CONSTITUTION:A light shielding metallic layer 5 of chromium, titanium, etc. is provided on an electrode end part and a part where there is no electrode. By taking disturbance in the end part of this electric field, and scattering and diffraction in case when light passes through a liquid crystal layer 9 having a thickness of about 5-20mum into consideration a picture element part crossed by the electrode, and the light shielding metal 5 require a superposition exceeding the same extent as the thickness of its liquid crystal layer. Also, in order to prevent the light shielding metal 5 and a transparent electrode 7 from being short-circuited, an insulating layer 6 is formed. The shape of opening parts 15, 16 of the light shielding metal 5 is optional, as long as it is within the almost same extent as the liquid crystal layer 9 from the picture element part crossed by the electrode. By forming the shape of this opening part 15 to a desired mask pattern, a fine pattern which is different from the electrode shape is obtained.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、半導体製造に用いられるフォトマスクに係り
、特にマスクOMやゲートアレイの試作や製造に好適な
、パターン可変の液晶ノ〈ネルを用いた液晶フォトマス
クに関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a photomask used in semiconductor manufacturing, and in particular to a photomask using a pattern-variable liquid crystal channel, which is suitable for prototyping and manufacturing of mask OM and gate arrays. Regarding liquid crystal photomasks.

〔発明の背景〕[Background of the invention]

近年の半導体製造技術の進歩は、高度なフォトリゾグラ
フィー技術に支えられている。このフォトリゾグラフィ
ーに必要なフォトマスクは。
Recent advances in semiconductor manufacturing technology have been supported by advanced photolithography technology. What photomask is required for this photolithography?

第1図のように従来、透明ガラス基板1上に蒸着した1
000A”程度の厚みのクロム勢の遮光金属2をパター
ン可変グ1.て待ている。
Conventionally, 1 was deposited on a transparent glass substrate 1 as shown in FIG.
A chromium-based light-shielding metal 2 with a thickness of about 0.000A'' is placed in a variable pattern pattern.

第2図は、従来の設凱から露光までの手順を示したもの
である。マスクパターン設計後、7オトプロツタ用デー
タを作成し、フォトプロッタを用いてマスクパターンの
10倍の大きさでレチクル(フォトマスクの1種)を作
り、このレチクルを用いて、フォトリピータにより、1
枚のフォトマスク上に多数の同じL S I パターン
を作成している。特に、高精度のパターンが必要な場合
、10倍レチクル又はそのコピーを用いて、1/10M
小プロジェクシ冒ンアライナーによりLSIパターンニ
ングを行なうことや、電子ビーム露光により、フォトマ
スクをノくターンニングしたり、直接LSI上にパター
ン可変クする方法もある。
FIG. 2 shows the conventional procedure from setup to exposure. After designing the mask pattern, create data for the 7-otoprotester, use a photoplotter to make a reticle (a type of photomask) that is 10 times the size of the mask pattern, and use this reticle to print 1.
A large number of identical LSI patterns are created on a single photomask. In particular, when a high-precision pattern is required, a 1/10M reticle or a copy of the 10x reticle is used.
There is also a method of performing LSI patterning using a small projector aligner, turning a photomask through electron beam exposure, or creating a variable pattern directly on the LSI.

しかし、従来のレチクルを作成する方法では。But in the traditional way of making reticles.

L 51 パターン設計からフォトマスク、又はレチク
ル形成までに、最低1日から数日かかるため、設計変更
から、変更済LSIの出来上りKは数日から2週間以上
を要し、スループットが極めて悪い。これに対し、電子
ビーム露光によるフォトマスク作成や%LSI直接パタ
ーンニングでは、設計からLSI試作完までの時間短縮
の向上は図れるものの、電子ビーム露光装置が極めて高
価なため、一般LSIの製造には使いKくい欠点があっ
た。
Since it takes at least one to several days from L 51 pattern design to photomask or reticle formation, it takes several days to two weeks or more to complete the modified LSI after the design change, resulting in extremely poor throughput. On the other hand, photomask creation using electron beam exposure and %LSI direct patterning can improve the time from design to completion of LSI prototype production, but the electron beam exposure equipment is extremely expensive, making it difficult to manufacture general LSIs. It had some drawbacks that made it difficult to use.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、安価で、かつ設計変更から変更済LS
I等の出来上りまでに1!する時間の短縮を図った。フ
ォトマスクを提供することにある。
The object of the present invention is to provide an inexpensive and modified LS from design changes.
1 by the completion of I etc.! The aim was to shorten the time required to do so. Our goal is to provide photomasks.

〔発明の概要〕[Summary of the invention]

上記目的のため、電気信号により部分的に光透過率が変
化する液晶パネルをフォトマスクとして用い、設計変更
と同時に液晶パネル駆動電気信号を変化させて所望のパ
ターンのフォトマスクを得て、フォトマスク作製のため
に要する時間が無視できるようKした事を特徴とする。
For the above purpose, a liquid crystal panel whose light transmittance is partially changed by an electric signal is used as a photomask, and at the same time as the design is changed, the liquid crystal panel driving electric signal is changed to obtain a photomask with a desired pattern. It is characterized in that the time required for manufacturing is negligible.

〔発明の実施例〕[Embodiments of the invention]

第5図は1本発明の一実施例である液晶フォトマスクの
断面図、第4図はその平面図である。
FIG. 5 is a sectional view of a liquid crystal photomask according to an embodiment of the present invention, and FIG. 4 is a plan view thereof.

通常の液晶表示パネルと同様に、初期配向制御膜8.1
0と透明電極7,11の付いた透明基板4゜12とシー
ル材14で囲まれた空間にツイスト・ネマティック液晶
を封入したパネルの表面に、偏光板5.13が貼付けで
ある。この液晶パネルは。
As with normal liquid crystal display panels, the initial alignment control film 8.1
A polarizing plate 5.13 is attached to the surface of a panel in which a twisted nematic liquid crystal is sealed in a space surrounded by a transparent substrate 4.12 having transparent electrodes 7 and 11 attached thereto and a sealing material 14. This LCD panel.

透明電極7と11の間に印加される電界に応じて。Depending on the electric field applied between transparent electrodes 7 and 11.

各画素部分の光透過率が変化する。The light transmittance of each pixel portion changes.

この時。透明電極の端部での電界の乱れ、(電極中心で
は電極に垂直な電界が発生するか、端部での電界は電極
に垂直な方向から傾くこと)Kより電極中心部と端部で
光透過率にむらが出来てしまうのを防ぐために、電極端
部及び電極のない部分にクロムやチタン等の遮光金属層
5を設けである。この電界の端部における乱れや。
At this time. Disturbance of the electric field at the edge of the transparent electrode (an electric field perpendicular to the electrode is generated at the center of the electrode, or the electric field at the edge is tilted from the direction perpendicular to the electrode). In order to prevent unevenness in transmittance, a light-shielding metal layer 5 made of chromium, titanium, or the like is provided at the end of the electrode and the part without the electrode. disturbances at the edges of this electric field.

約5〜20μm位の厚みのある液晶層9を光が通過する
時の散乱や回折を考えて、電極の交差する画素部と遮光
金属5は、はぼその液晶層の厚みと同程度以上の重なり
が必要となる。才だ。
Considering scattering and diffraction when light passes through the liquid crystal layer 9, which has a thickness of about 5 to 20 μm, the pixel area where the electrodes intersect and the light-shielding metal 5 should have a thickness that is approximately the same or more than the thickness of the liquid crystal layer. Overlapping is required. He's talented.

遮光金属5と透明電極7の短絡を防ぐためK。K to prevent a short circuit between the light-shielding metal 5 and the transparent electrode 7.

絶縁層6が間に形成されている。An insulating layer 6 is formed therebetween.

遮光金属5の開口部15 、16の形状は、電極の交差
している画素部から液晶層9の厚みとほぼ同程度以上内
側圧ある限り、任意である。この開口部15の形状を、
所望のマスクパターンとすることKより、電極形状と異
なる微細パターンが得られる。従って、電極形状精度は
1通常マスク精度より劣っている。開口部16は、マス
ク合わせに必要となる合わせマークの一例である。
The shape of the openings 15 and 16 in the light-shielding metal 5 is arbitrary as long as the inner pressure from the pixel portion where the electrodes intersect is approximately equal to or more than the thickness of the liquid crystal layer 9. The shape of this opening 15 is
By forming a desired mask pattern, a fine pattern different from the electrode shape can be obtained. Therefore, the electrode shape accuracy is inferior to the normal mask accuracy. The opening 16 is an example of an alignment mark required for mask alignment.

この合わせマークを電極上に形成することKより、マス
ク合わせ時はこの画素部分を透明として合わせマークを
用い、露光時は不透明として合わせマークを露光しない
事ができ、余分なパターンがLSI等上に生じさせない
こともできる。逆圧合わせマークを露光してもかまわな
い場合、印加電界のない時透明となる液晶モードを用い
、透明電極のない部分に合わせマークを形成してもよい
。また、このように無電界時に透明となる液晶モードを
用いるならば、消去する必要のないパターンは、透明電
極のない部分に形成してもかまわない。ただし、この時
も。
By forming this alignment mark on the electrode, when aligning the mask, this pixel part can be made transparent and the alignment mark can be used, and during exposure, it can be made opaque so that the alignment mark is not exposed, and the extra pattern can be removed on the LSI etc. It is also possible to prevent it from occurring. If it is acceptable to expose the reverse pressure alignment mark, the alignment mark may be formed in a portion where there is no transparent electrode by using a liquid crystal mode that becomes transparent when no electric field is applied. Furthermore, if a liquid crystal mode that becomes transparent in the absence of an electric field is used, patterns that do not need to be erased may be formed in areas where there is no transparent electrode. However, even at this time.

遮光金属5のパターン開口部は、電極の端部より液晶層
の厚みとほぼ同程度以上離す必要がある。
The pattern opening of the light-shielding metal 5 needs to be spaced from the end of the electrode by at least approximately the same thickness as the liquid crystal layer.

この様に、第5図と第4図に示された液晶フォトマスク
は、従来の第1図のフォトマスクが表面にパターン形成
されているのと異なり、透明基板ではさまれた内側にパ
ターン形成されているため、従来多く用いられてきた密
着露光ができない。また、液晶層厚が5〜20μm程度
あり、数μmピッチ以下の微細パターンは実現できない
ため、実際のLSI等に露光するパターンの5〜10倍
程度のパターンを本発明の液晶フォトマスクで形成し、
縮小プロジェクシヲンアライナを使用するのが望ましい
。第5図に1本発明を用いた場合の設計から露光までの
手順の一例を示す。第2図の従来例と比べて、フォトプ
ロッタによる10倍レチクル形成工程がないため。
In this way, the liquid crystal photomask shown in FIGS. 5 and 4 has a pattern formed on the inside sandwiched between transparent substrates, unlike the conventional photomask shown in FIG. 1, which has a pattern formed on the surface. Because of this, contact exposure, which has been commonly used in the past, is not possible. In addition, since the liquid crystal layer has a thickness of about 5 to 20 μm and a fine pattern with a pitch of several μm or less cannot be realized, a pattern that is about 5 to 10 times larger than the pattern exposed on an actual LSI etc. can be formed using the liquid crystal photomask of the present invention. ,
It is preferable to use a reduced projection aligner. FIG. 5 shows an example of the procedure from design to exposure when the present invention is used. Compared to the conventional example shown in FIG. 2, this is because there is no step of forming a 10x reticle using a photoplotter.

設計から試作までの時間を短縮できる効果がある。This has the effect of shortening the time from design to prototyping.

本発明の他の実施例の断面図を第6図に、平面図を第7
図に示す。第5図と第4図の実施例は、単純マ) IJ
クス駆動方式のため、特に大きなフントラスト比を必要
とする液晶フォトマスクでは、多くの画素すなわちパタ
ーンを選択駆動することは選択デユーティ比が小さくな
るので難しいのに対し、第6図と第7図に示す実施例で
は、いわゆる薄膜トランジスタを用いたアクティブマト
リクス駆動方式を用いることにより1画素すなわちパタ
ーン数が多く例えば1万個以上になっても各画素スイッ
チと信号保持容量のサンプルホールドにより選択デユー
ティ比をほぼ1にすることができるため、大きなフント
ラスト比が得られやすい利点を持っている。
A sectional view of another embodiment of the present invention is shown in FIG. 6, and a plan view is shown in FIG.
As shown in the figure. The embodiments in Figures 5 and 4 are simple Ma) IJ
6 and 7, it is difficult to selectively drive many pixels, that is, patterns, because the selection duty ratio becomes small, especially in liquid crystal photomasks that require a large fundus ratio. In the embodiment shown in , by using an active matrix drive method using so-called thin film transistors, even if the number of pixels or patterns is large, for example, 10,000 or more, the selected duty ratio can be maintained by sampling and holding each pixel switch and signal holding capacitor. Since it can be set to approximately 1, it has the advantage of easily obtaining a large fund-last ratio.

第6図は、第5図に薄膜トランジスタ17%及び薄膜ト
ランジスタと透明電極間の絶縁層18が追加されている
。第7図は、第4図が透明電極7.11でマトリクスを
組んでいたのに対し、透明電極7は各画素すなわちパタ
ーンに分離され。
In FIG. 6, 17% of the thin film transistor and an insulating layer 18 between the thin film transistor and the transparent electrode are added to FIG. 5. In FIG. 7, the transparent electrodes 7 and 11 are arranged in a matrix in FIG. 4, whereas the transparent electrodes 7 are separated into each pixel or pattern.

透明電極11は全面共通電極を構成している。また、ア
クティブマトリクス方式のため、ゲートバス19.ドレ
インバス20が遮光金属5の開口部15 、16をさけ
て走り、それらの交差部には、各画素スイッチングトラ
ンジスタ17がこれも遮光金属5の開口部をさけて形成
されている。この様な構成により、ゲートバス19.ド
レインバス20、スイッチングトランジスタ17の光透
過率が液晶フォトマスクの開口部の光透過率に影響を及
ぼさない様にできる利点がある。また、遮光金属層5を
、各画素に形成される信号保持容量の画素共通電極とし
て兼用することもできる。
The transparent electrode 11 constitutes a common electrode over the entire surface. In addition, since it is an active matrix system, the gate bus 19. The drain bus 20 runs avoiding the openings 15 and 16 in the light-shielding metal 5, and each pixel switching transistor 17 is formed at the intersection thereof, also avoiding the opening in the light-shielding metal 5. With this configuration, the gate bus 19. There is an advantage that the light transmittance of the drain bus 20 and the switching transistor 17 can be prevented from affecting the light transmittance of the opening of the liquid crystal photomask. Further, the light-shielding metal layer 5 can also be used as a pixel common electrode of a signal holding capacitor formed in each pixel.

第6図と第7図による実施例の液晶フォトマスクも、第
6図と第4図の実施例の場合と同様に、第5図に示すよ
うな設計から露光までの手順となり、試作等に要する時
間の短縮が図れる。
The liquid crystal photomask of the embodiment shown in Figs. 6 and 7 also follows the procedure from design to exposure as shown in Fig. 5, as in the case of the embodiment shown in Figs. 6 and 4. The time required can be shortened.

以上の説明では、偏光板を2枚用いるツイストネマティ
ック液晶を例にとっているが、偏光板5か15のどちら
か1枚だけで良いゲストホスト液晶や、偏光板のいらな
い相転移液晶など。
In the above explanation, a twisted nematic liquid crystal that uses two polarizing plates is taken as an example, but there are also guest-host liquid crystals that only require one polarizing plate 5 or 15, and phase change liquid crystals that do not require a polarizing plate.

液晶の表示モードに関係なく1本発明を実施できる。The present invention can be implemented regardless of the display mode of the liquid crystal.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、マスクROMやゲートアレイ製造のユ
ーザ設計のフォトマスクのように。
According to the present invention, such as a user-designed photomask for mask ROM and gate array manufacturing.

パターンが限定されているフォトマスクのノくターンを
電気信号により可変(消去)できるため。
This is because the no-turns on the photomask, which has a limited pattern, can be varied (erased) using electrical signals.

設計からLSI等の出来上りまでの時間を短縮できる効
果がある。
This has the effect of shortening the time from design to completion of LSI etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のフォトマスクの断面図、第2図は従来の
パターン設計からフォトリゾグラフィーまでの手順図、
第5図は本発明の一実施例としての液晶フォトマスクの
断面図、第4図はその平面図、第5図は本発明を用いた
場合のノ(ターン設計から7thリゾグラフイーまでの
手順図、第6図は本発明の他の実施例の液晶フォトマス
クの断面図、第7図はその平面図である。 1・・・透明ガラス、 210.クロム。 5.15・・・偏光板、 4.12・・・透明基板。 5・・・遮光金属 6.18・・・絶縁層、7.11・
・・透明電極 8.10・・・配向制御膜。 9・・・液晶、14・・・液晶シール。 代理人弁理士 高 橋 明 夫 第1図 2 第2図 冨4図 第5図 第2図 、3
Figure 1 is a cross-sectional view of a conventional photomask, Figure 2 is a procedure diagram from conventional pattern design to photolithography,
FIG. 5 is a cross-sectional view of a liquid crystal photomask as an embodiment of the present invention, FIG. 4 is a plan view thereof, and FIG. Fig. 6 is a sectional view of a liquid crystal photomask according to another embodiment of the present invention, and Fig. 7 is a plan view thereof. 1... Transparent glass, 210. Chromium. 5.15... Polarizing plate, 4 .12... Transparent substrate. 5... Light shielding metal 6.18... Insulating layer, 7.11.
...Transparent electrode 8.10...Orientation control film. 9...Liquid crystal, 14...Liquid crystal sticker. Representative Patent Attorney Akio Takahashi Figure 1, Figure 2, Figure 2, Figure 4, Figure 5, Figure 2, 3

Claims (1)

【特許請求の範囲】[Claims] 1、 液晶層をはさむ透明電極の画素相当部よりも、液
晶層の厚みとほぼ同程度以上内側にマスクパターン開口
部を持つ遮光金属層を、透明電極と絶縁して設け、電気
信号により各マスクパターンを選択できる様にしたこと
を特徴とする液晶フォトマスク。
1. A light-shielding metal layer is provided insulated from the transparent electrode and has a mask pattern opening at least as thick as the thickness of the liquid crystal layer inward from the pixel-corresponding part of the transparent electrodes that sandwich the liquid crystal layer. A liquid crystal photomask characterized by the ability to select patterns.
JP59067665A 1984-04-06 1984-04-06 Liquid crystal photomask Pending JPS60212731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59067665A JPS60212731A (en) 1984-04-06 1984-04-06 Liquid crystal photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59067665A JPS60212731A (en) 1984-04-06 1984-04-06 Liquid crystal photomask

Publications (1)

Publication Number Publication Date
JPS60212731A true JPS60212731A (en) 1985-10-25

Family

ID=13351521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59067665A Pending JPS60212731A (en) 1984-04-06 1984-04-06 Liquid crystal photomask

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JP (1) JPS60212731A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293536A (en) * 1988-09-30 1990-04-04 Nec Yamagata Ltd Liquid crystal mask for producing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293536A (en) * 1988-09-30 1990-04-04 Nec Yamagata Ltd Liquid crystal mask for producing semiconductor device

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