JPS60204879A - Formation of film by utilizing vapor phase reaction - Google Patents

Formation of film by utilizing vapor phase reaction

Info

Publication number
JPS60204879A
JPS60204879A JP6138284A JP6138284A JPS60204879A JP S60204879 A JPS60204879 A JP S60204879A JP 6138284 A JP6138284 A JP 6138284A JP 6138284 A JP6138284 A JP 6138284A JP S60204879 A JPS60204879 A JP S60204879A
Authority
JP
Japan
Prior art keywords
cover
film
workpiece
phase reaction
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6138284A
Other languages
Japanese (ja)
Inventor
Yoichi Hashimoto
陽一 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6138284A priority Critical patent/JPS60204879A/en
Publication of JPS60204879A publication Critical patent/JPS60204879A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks

Abstract

PURPOSE:To form a local covering in short time at a low cost without post working by concealing the non-film part of a work with a cover and closing the spacing between the cover and the work by a difference in the coefft. of thermal expansion between said cover and material to be worked in the stage of forming the film. CONSTITUTION:The non-film part of a circular cylindrical material 5 to be worked is locally concealed by a cover 9. The cover 9 is formed of an ''Invar'' alloy and has he inside diameter slightly larger than the outside diameter of the material. Such material is set on the tray 7 in a reaction furnace and the inside of the furnace is heated. Only the gaseous H2 is passed until the reaction temp. is attained. The material 5 expands thermally in an equal direction but the cover 9 does not expand thermally. The spacing between the material 5 and the cover 9 is thereby closed and the part of the material 5 except the exposed part can be shut off from the reactive gaseous atmosphere. If the temp. is lowered after the formation of the film, the material 5 restores the original size and can be therefore easily removed from the cover 9.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は気相反応法を利用した被膜形成方法、特に局
所被覆に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming a coating using a gas phase reaction method, particularly to local coating.

〔従来技術〕[Prior art]

従来、気相反応を利用した被膜形成の装置としては第1
図に関するものがあった。図において、■は原料ガス、
(2)は反応炉、(3)は排ガス処理装置である。又第
2図は(21の反応炉内部を詳しく示した断面図である
。図において(41はヒータ、15)は被加工物、16
;は原料ガス導入パイプ、(71は棚、+8)は排ガス
パイプである。
Conventionally, it was the first device to form a film using a gas phase reaction.
There was something about diagrams. In the figure, ■ is the raw material gas,
(2) is a reactor, and (3) is an exhaust gas treatment device. FIG. 2 is a sectional view showing the inside of the reactor (21) in detail. In the figure, (41 is a heater, 15 is a workpiece, and 16 is a
; is a raw material gas introduction pipe, (71 is a shelf, +8) is an exhaust gas pipe.

次に従来の気相反応を利用した被膜形成方法を第2図(
二基づいて説明する。ヒータ(41により反応炉(21
内部が被膜形成温度に到達するまでは、原料ガスのうち
、被加工物15)の酸化防止の為のH2ガス等が原料ガ
ス導入パイプ(6)から反応炉(21内に流される。次
に反応炉(2;内部が被膜形成温度に達すると全ての原
料ガスが反応炉内に導入され原料ガスは化学反応をおこ
し、被加工物表面に被膜が形成される。反応炉(2)中
で被加工物(51は単に棚(7)の上に置かれる、或は
吊される等のセツティングがなされている。未反応のガ
スおよび反応副産物から成る排ガスは排ガスパイプ(8
)を経由し、排ガス処理装置によって処理された後放空
される。この後反応炉(21の温度が室温付近まで冷却
されるのを待って被加工物(51が取り出される。
Next, the conventional method of forming a film using gas phase reaction is shown in Figure 2 (
I will explain based on 2. The reactor (21
Until the inside reaches the film forming temperature, among the raw material gases, H2 gas and the like for preventing oxidation of the workpiece 15) are flowed from the raw material gas introduction pipe (6) into the reactor (21).Next, Reactor (2) When the inside reaches the film forming temperature, all the raw material gases are introduced into the reactor, the raw material gases undergo a chemical reaction, and a film is formed on the surface of the workpiece.In the reactor (2) The workpiece (51) is simply placed on a shelf (7) or suspended. Exhaust gas consisting of unreacted gas and reaction by-products is passed through an exhaust gas pipe (8).
), and after being treated by an exhaust gas treatment device, it is released into the air. Thereafter, the workpiece (51) is taken out after waiting for the temperature of the reactor (21) to cool down to around room temperature.

従来の気相反応を利用した被膜形成は以上のような方法
で処理されているので、被加工物全体が被覆されてしま
い、局所的に被覆されない部分を作る為に被膜形成処理
後、例えばラッピングで被膜を落す等の後加工が必要と
なり時間もかかり、またその為処理コストが高くなるな
どの欠点があった。
Conventional film formation using gas phase reactions is processed using the method described above, so the entire workpiece is coated, and in order to create locally uncovered areas, after the film formation process, for example, lapping is performed. This method requires post-processing such as removing the coating, which takes time, and has the disadvantage of increasing processing costs.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来の方法の欠点を除去するた
めになされたもので、気相反応を利用して被加工物表面
に被膜を形成させる方法において、被加工物には非被膜
部分を覆うカバーを用い、そのカバーの材質は、被加工
物の熱膨張係数とカバーの熱膨張係数との差によって被
膜形成時に被加工物とカバー人口との間隙が閉じるよう
なものを用いることにより、局所被覆を後加工無しで短
時間、低コストで行なうことを目的としている。
This invention was made to eliminate the drawbacks of the conventional methods as described above, and is a method for forming a film on the surface of a workpiece using a gas phase reaction, in which a non-coated part is left on the workpiece. By using a cover to cover the material, the material of the cover is such that the gap between the workpiece and the cover population is closed during film formation due to the difference between the thermal expansion coefficient of the workpiece and the cover. The purpose is to perform local coating in a short time and at low cost without post-processing.

〔発明の実施例〕 第3図にこの発明の一実施例にかかわる被加工物とカバ
ーを中心的に表わす部分断面図を示す。
[Embodiment of the Invention] FIG. 3 is a partial sectional view mainly showing a workpiece and a cover according to an embodiment of the invention.

図において、円柱形状をした被加工物(51の斜線部分
のみに被膜を形成する場合につき考える。(91は局所
被覆を行なうためのカバーで、ここではインバー合金に
より形成されており、被加工品の外径よりわずかに大き
な内径を持っている。
In the figure, consider the case where a coating is to be formed only on the shaded area of a cylindrical workpiece (51). (91 is a cover for local coating, here it is made of an invar alloy, and the workpiece is It has an inner diameter slightly larger than the outer diameter.

以下、被膜形成処理手順に従って説明する。室温で棚(
7)の上にセットされた時点では、被加工物151とカ
バー(9)の間には、わずかな間隙がある。ヒータによ
り炉内は加熱されるが反応温度(=達するまではH2ガ
スのみが流されている。この時円柱形状の被加工切(5
)は温度上昇に伴なって軸に対して等末的に熱膨張する
がインバー合金製のカバー+91は熱膨張せず内径は変
化しない。被加工物(51の膨張量は熱膨張係数を用い
てあらかじめ計算によってめることができる。この膨張
量の分だけ内径が大きなカバー(91を用いることによ
り第4図に示すように被膜形成温度において被加工物(
5)のうち露出部分以外は反応ガス雰囲気から遮断する
ことが出来る。この状態で反応ガスが流され被膜が形成
された後反応炉の温度が下げられる。温度が下がり被加
工物(51を取り出す際には、第3図に示すように被加
工物+51の寸法は元の大きさに戻り容易にカバー(9
1から取りはずすことが出来る。
Hereinafter, a description will be given according to the film forming process procedure. Shelf at room temperature (
7), there is a slight gap between the workpiece 151 and the cover (9). The inside of the furnace is heated by the heater, but only H2 gas is flowed until the reaction temperature (= = reached).At this time, the cylindrical workpiece (5
) thermally expands uniformly with respect to the shaft as the temperature rises, but the cover +91 made of invar alloy does not thermally expand and its inner diameter does not change. The amount of expansion of the workpiece (51) can be calculated in advance using the coefficient of thermal expansion. By using a cover (91) whose inner diameter is large by this amount of expansion, the film forming temperature can be adjusted as shown in Figure 4. At the workpiece (
In 5), the parts other than the exposed parts can be shielded from the reaction gas atmosphere. In this state, the reaction gas is flowed to form a film, and then the temperature of the reactor is lowered. When the temperature drops and the workpiece (51) is taken out, the dimensions of the workpiece +51 return to the original size as shown in Figure 3, and the cover (91) is easily removed.
It can be removed from 1.

なお上記実施例では、カバーをインバー合金で形成しカ
バーは熱膨張せず、被加工品のみ熱膨張するものとした
が、この他、カバーを熱膨張する材質で形成し、結果的
に被加工品とカバーの熱膨張係数の差により被膜形成時
に被加工物とカバー人口が閉じるような組み合わせでも
良い。なお、カバーが被加工物に接する部分は被覆され
ない為、このカバーは繰返し使用可能である。
In the above example, the cover is made of an invar alloy, so that the cover does not thermally expand and only the workpiece expands thermally. A combination may be used in which the workpiece and the cover are closed during film formation due to the difference in thermal expansion coefficient between the workpiece and the cover. Note that since the portion of the cover that contacts the workpiece is not coated, this cover can be used repeatedly.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば気相反応を利用して被
加工物表面に被膜を形成させる方法において、上記被加
工物には非被膜部分を覆うカバーを用い、そのカバーの
材質として上記被加工物と上記カバーとの熱膨張係数の
差によって、被膜形成時に上記被加工物と上記カバー人
口との間隙が閉じるようなものを用いたので、後加工が
省略でき、短時間で安価な局所被覆が可能となるという
効果がある。
As described above, according to the present invention, in the method of forming a film on the surface of a workpiece using a gas phase reaction, a cover is used for the workpiece to cover the non-coated part, and the material of the cover is as described above. Since we used a material that closes the gap between the workpiece and the cover during film formation due to the difference in thermal expansion coefficient between the workpiece and the cover, post-processing can be omitted, resulting in a short and inexpensive process. This has the effect of enabling local coverage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の気相反応を利用した被膜形成装置の構成
図、第2図は従来の気相反応を利用した被膜形成装置の
反応炉を示す部分断面図、第3図はこの発明の一実施例
にかかわる被加工物とカバーを中心的に表わす室温での
炉内拡大断面図、第4図はこの発明の一実施例にかかわ
る被加工物とカバーを中心的C表わす被膜形成温度での
炉内拡大断面図である。 111・・・原料ガス、(21・・・反応炉、(31・
・・排ガス処理装fil!、141・・・ヒータ、(5
1・・・被加工物、(91・・・カバーなお、図中同一
符号は同−又は相当部分を示す。 代理人 大岩増雄 第1図 第2図 第3図 第4図
Fig. 1 is a block diagram of a conventional film forming apparatus using a gas phase reaction, Fig. 2 is a partial sectional view showing a reactor of a conventional film forming apparatus using a gas phase reaction, and Fig. 3 is a block diagram of a conventional film forming apparatus using a gas phase reaction. FIG. 4 is an enlarged cross-sectional view of the inside of the furnace at room temperature, mainly showing the workpiece and cover according to one embodiment of the present invention, and FIG. FIG. 2 is an enlarged sectional view of the inside of the furnace. 111... Raw material gas, (21... Reactor, (31...
...Exhaust gas treatment system fil! , 141... heater, (5
1...Workpiece, (91...Cover) The same reference numerals in the drawings indicate the same or equivalent parts. Agent: Masuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 気相反応を利用して被加工物表面に被膜を形成させる方
法において、上記被加工物には非被膜部分を覆うカバー
を用い、そのカバーの材質は上記被加工物の熱膨張係数
と上記カバーの熱膨張係数の差によって被膜形成時に上
記被加工物と上記カバー人口との間隙が閉じるようなも
のを用いることを特徴とする気相反応を利用した被膜形
成方法。
In a method of forming a film on the surface of a workpiece using a gas phase reaction, a cover is used for the workpiece to cover the non-coated parts, and the material of the cover is determined by the coefficient of thermal expansion of the workpiece and the cover. A method for forming a film using a gas phase reaction, characterized in that a material is used that closes a gap between the workpiece and the cover material during film formation due to a difference in thermal expansion coefficients.
JP6138284A 1984-03-27 1984-03-27 Formation of film by utilizing vapor phase reaction Pending JPS60204879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6138284A JPS60204879A (en) 1984-03-27 1984-03-27 Formation of film by utilizing vapor phase reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6138284A JPS60204879A (en) 1984-03-27 1984-03-27 Formation of film by utilizing vapor phase reaction

Publications (1)

Publication Number Publication Date
JPS60204879A true JPS60204879A (en) 1985-10-16

Family

ID=13169565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6138284A Pending JPS60204879A (en) 1984-03-27 1984-03-27 Formation of film by utilizing vapor phase reaction

Country Status (1)

Country Link
JP (1) JPS60204879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579567B1 (en) * 1999-08-11 2003-06-17 Nripendra N. Das Process for selectively masking turbine components during vapor phase diffusion coating
EP1388592B1 (en) * 2002-07-31 2010-08-25 Hilmar Bode Process and apparatus for isolating a surface area of a workpiece

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579567B1 (en) * 1999-08-11 2003-06-17 Nripendra N. Das Process for selectively masking turbine components during vapor phase diffusion coating
US6821564B2 (en) 1999-08-11 2004-11-23 General Electric Company Process for masking turbine components during vapor phase diffusion coating
EP1388592B1 (en) * 2002-07-31 2010-08-25 Hilmar Bode Process and apparatus for isolating a surface area of a workpiece

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