JPS6341018A - Production apparatus for semiconductor - Google Patents
Production apparatus for semiconductorInfo
- Publication number
- JPS6341018A JPS6341018A JP18571986A JP18571986A JPS6341018A JP S6341018 A JPS6341018 A JP S6341018A JP 18571986 A JP18571986 A JP 18571986A JP 18571986 A JP18571986 A JP 18571986A JP S6341018 A JPS6341018 A JP S6341018A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- metal
- wafer
- heat
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はイオン打ち込み後の活性化などの熱処理プロセ
スにおいて用いられる半導体製造装置に係シ、特に加熱
用チャンバー内に支持されるウェハをハロゲンランプな
どの光源にて熱処理する短時間アニール装置に関するも
のである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment used in heat treatment processes such as activation after ion implantation, and in particular, the present invention relates to semiconductor manufacturing equipment used in heat treatment processes such as activation after ion implantation. This relates to a short-time annealing device that performs heat treatment using a light source such as.
現在、短時間アニール装置としてはハロゲンランプなど
の光源を用いたランプアニール装置が多く用いられてい
る。ランプアニール装置の中で、ウェハを収納するチャ
ンバーは通常石英を用いているものが多いが、チャンバ
ー内を減圧あるいは加圧できるものでは、気圧差に耐え
うる強度を持たせるためにチャンバーの一部に金属を用
いることが多い。Currently, lamp annealing devices using a light source such as a halogen lamp are often used as short-time annealing devices. In lamp annealing equipment, the chamber that houses the wafer is usually made of quartz, but in those that can reduce or increase the pressure inside the chamber, a part of the chamber is made of quartz in order to have the strength to withstand the pressure difference. metal is often used for
第２図に従来のランプアニール装置のチャンバ一部分の
概略を示し、以下これを用いて従来の装置について説明
する。FIG. 2 schematically shows a part of a chamber of a conventional lamp annealing device, and the conventional device will be explained below using this diagram.
従来のランプアニール装置は、そのチャンバ一部分の概
略構造を第２図に示すように、アルミ（Ａｔ）ｈるいは
ステンレスなどからなる金属製のチャンバー１と、この
チャンバー１の上面開口部に装着された石英製の加熱用
窓２と、チャンバー１の側部において熱処理すべきウェ
ハ１１を水平に支える石英製のサセプタ３と、ハロゲン
ランプなどの加熱用ランプ４から構成される。そして、
サセプタ３上にウェハ１１を載せてチャンバー１内に挿
入するとともに、目的に応じて減圧〔あるいは加圧、常
圧〕したうえ、ランプ４によシウエハ１１を急速に加熱
するものとなっている。なお、第２図中、６は気密封止
用のシール部であシ、１０は加熱用ランプ４から発生す
る熱源としての光である。A conventional lamp annealing device has a metal chamber 1 made of aluminum (At) aluminum or stainless steel, and is attached to an opening on the upper surface of the chamber 1, as shown in FIG. The chamber 1 is composed of a heating window 2 made of quartz, a susceptor 3 made of quartz that horizontally supports a wafer 11 to be heat-treated on the side of the chamber 1, and a heating lamp 4 such as a halogen lamp. and,
The wafer 11 is placed on the susceptor 3 and inserted into the chamber 1, and the pressure is reduced (or increased or normal pressure) depending on the purpose, and the wafer 11 is rapidly heated by the lamps 4. In FIG. 2, reference numeral 6 indicates a seal portion for airtight sealing, and reference numeral 10 indicates light as a heat source generated from the heating lamp 4.
ところが、従来の金属製チャンバーを用いたランプアニ
ール装置では、チャンバー内面に金属が剥き出しで用い
られているため、ウェハ１１ｔ−処理する際に、その加
熱によってチャンバー壁面からの金属の汚染のおそれが
あった。However, in conventional lamp annealing equipment using a metal chamber, metal is exposed on the inner surface of the chamber, so there is a risk of metal contamination from the chamber wall due to heating during wafer processing. Ta.
本発明はこのような問題点を解消するためになされたも
ので、その目的は、上記チャ／バー壁面からの金属の汚
染を効果的に防止した短時間アニール装置を提供するこ
とにある。The present invention has been made to solve these problems, and its purpose is to provide a short-time annealing apparatus that effectively prevents metal contamination from the chamber wall surface.
本発明に係る半導体製造装置は、金属製チャンバー内に
支持されるウエノ・を熱処理する短時間アニール装置に
おいて、前記チャンバーの内側に、その内面を覆うよう
に、耐熱性でかつ金属を含有しない石英やセラミックス
などの材質からなる被覆部材を一体もしくは別体構造に
して設けたことを特徴とするものである。The semiconductor manufacturing device according to the present invention is a short-time annealing device for heat-treating wafers supported in a metal chamber. The device is characterized in that a covering member made of a material such as or ceramics is provided as an integral or separate structure.
本発明においては、チャンバーの内側が、耐熱性で金属
を含有しない材質からなる被覆部材にて覆われることに
よシ、ウエノ・を熱処理する際に、チャンバーから放出
される金属不純物によるウェハの汚染を防ぐことができ
る。In the present invention, by covering the inside of the chamber with a coating member made of a heat-resistant material that does not contain metal, the wafer is contaminated by metal impurities released from the chamber when the wafer is heat-treated. can be prevented.
以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明による半導体製造装置の一実施例を示す
概略断面図であυ、ここではランプアニール装置の場合
を示す０この実施例のランプアニール装置は、金属製チ
ャンバー１と、石英製の加熱用窓２と、サセプタ３と、
加熱用ランプ４から構成される点は、第２図に示す従来
例のものと同様であるが、前記チャンバー１の内側に石
英製の内壁５を重ねて二Ｎ構造とすることによシ、この
内壁５にて金属製チャンバー１の内面を覆うようにした
ものでちる。なお、図中、同一符号は同一または相当部
分を示している。FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor manufacturing apparatus according to the present invention. Here, a lamp annealing apparatus is shown. The lamp annealing apparatus of this embodiment has a metal chamber 1 and a quartz chamber. a heating window 2, a susceptor 3,
The construction of the heating lamp 4 is similar to that of the conventional example shown in FIG. This inner wall 5 covers the inner surface of the metal chamber 1. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
このように、上記実施例の構成によると、金属製チャン
バー１の内面が石英からなる内壁５で被覆されることに
よシ、そのチャンバー１内に支持されたウェハ１１をラ
ンプ４によシ加熱して熱処理する際に、金属製チャンバ
ー１が直接炉つまシ処理雰囲気内に晒されることがなく
なる。これによって、ウェハ１１の金属不純物による汚
染を効果的に防ぐことができる。As described above, according to the configuration of the above embodiment, since the inner surface of the metal chamber 1 is covered with the inner wall 5 made of quartz, the wafer 11 supported in the chamber 1 can be heated by the lamp 4. During the heat treatment, the metal chamber 1 is not directly exposed to the atmosphere for the furnace treatment. Thereby, contamination of the wafer 11 by metal impurities can be effectively prevented.
なお、上記実施例では、金属製チャンバーの内面を被覆
する部側として石英製の内壁を用いた場合について示し
たが、本発明はこれに限らず、セラミックスやＳｉＣな
どの耐熱性に優れかつ金属を含有しない材質のものであ
ればよく、要は不純物汚染の可能性の少ないものであれ
ばよい０また、上記実施例では、金属チャンバー内に石
英の内壁を重ねた別体構造の場合であったが、金属チャ
ンバーの内面に、耐熱性で金属を含有しない物質を塗布
あるいはコーティングした一体構造でも同様の効果を奏
する。In addition, in the above embodiment, a case is shown in which an inner wall made of quartz is used as the part that covers the inner surface of a metal chamber, but the present invention is not limited to this, and the present invention is not limited to this. The material may be any material as long as it does not contain any impurities, and in short, the material may have a low possibility of impurity contamination.In addition, in the above embodiment, the metal chamber has a separate structure in which an inner wall of quartz is layered inside the metal chamber. However, an integral structure in which the inner surface of the metal chamber is coated or coated with a heat-resistant material that does not contain metal can also produce the same effect.
以上のように本発明によれば、短時間アニール装置にお
いて金属製チャンバーの内側に、その内面を覆うように
、耐熱性でかつ金属を含有しない石英などの材質からな
る被覆部材を一体もしくは別体構造にして設けたので、
ウエノ・表面への金属不純物の汚染を防ぐことができる
効果がある。As described above, according to the present invention, a covering member made of a heat-resistant and metal-free material such as quartz is integrally or separately provided inside a metal chamber in a short-time annealing apparatus so as to cover the inner surface of the metal chamber. Because it was set up as a structure,
It has the effect of preventing metal impurity contamination on the surface of the material.
第１図は本発明による半導体製造装置の一実施例を示す
概略断面図、第２図は従来のランプアニール装置を示す
断面図である０FIG. 1 is a schematic sectional view showing an embodiment of a semiconductor manufacturing apparatus according to the present invention, and FIG. 2 is a sectional view showing a conventional lamp annealing apparatus.
Claims (1)
時間アニール装置において、前記チャンバーの内側に、
その内面を覆うように、耐熱性でかつ金属を含有しない
石英やセラミックスなどの材質からなる被覆部材を一体
もしくは別体構造にして設けたことを特徴とする半導体
製造装置。In a short-time annealing device for heat-treating a wafer supported in a metal chamber, inside the chamber,
A semiconductor manufacturing device characterized in that a covering member made of a heat-resistant and metal-free material such as quartz or ceramics is provided integrally or separately to cover the inner surface of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18571986A JPS6341018A (en) | 1986-08-06 | 1986-08-06 | Production apparatus for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18571986A JPS6341018A (en) | 1986-08-06 | 1986-08-06 | Production apparatus for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6341018A true JPS6341018A (en) | 1988-02-22 |
Family
ID=16175657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18571986A Pending JPS6341018A (en) | 1986-08-06 | 1986-08-06 | Production apparatus for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6341018A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001031694A1 (en) * | 1999-10-28 | 2001-05-03 | Applied Materials Inc. | Apparatus for manufacturing semiconductor device |
| JP2005101159A (en) * | 2003-09-24 | 2005-04-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
| JP2020061589A (en) * | 2015-08-26 | 2020-04-16 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment apparatus |
-
1986
- 1986-08-06 JP JP18571986A patent/JPS6341018A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001031694A1 (en) * | 1999-10-28 | 2001-05-03 | Applied Materials Inc. | Apparatus for manufacturing semiconductor device |
| JP2005101159A (en) * | 2003-09-24 | 2005-04-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
| JP2020061589A (en) * | 2015-08-26 | 2020-04-16 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4409714B2 (en) | Single wafer heat treatment system | |
| KR101049730B1 (en) | Substrate transfer tray used for substrate heat treatment device and substrate heat treatment | |
| JPS6341018A (en) | Production apparatus for semiconductor | |
| JPH08139047A (en) | Heat treatment apparatus | |
| JPH03291940A (en) | Uniformly heating structure of semiconductor manufacturing device | |
| CN208368473U (en) | Equipment for the lid of thermal processing chamber and for handling substrate | |
| JP3498811B2 (en) | Vertical heat treatment equipment | |
| JPS6224630A (en) | Formation of thermal oxidation film and device therefor | |
| JP2889649B2 (en) | Heat treatment equipment | |
| JP3056240B2 (en) | Heat treatment equipment | |
| JPH03131027A (en) | High speed heat treating method and device therefor | |
| JPH0817746A (en) | Heater | |
| JPH0510354Y2 (en) | ||
| JPH05152229A (en) | Heat treatment furnace | |
| JPH04186616A (en) | Heat treating apparatus | |
| JPS59100536A (en) | Microwave processor | |
| JPS6115511Y2 (en) | ||
| JPH07161655A (en) | Soaking tube for heat-treating device | |
| JPH09190977A (en) | Chamber device for manufacture of semiconductor element | |
| JP2023146567A (en) | Substrate treatment apparatus and cover ring assembly | |
| JP2001093841A (en) | Apparatus for thermally treating at high temperature and under high vacuum | |
| JPH0240480Y2 (en) | ||
| JPH04280419A (en) | Heat treatment device | |
| JPH0234824Y2 (en) | ||
| JPH06163390A (en) | Plama baking oven |