JPH06163390A - Plama baking oven - Google Patents

Abstract

PURPOSE:To produce plasma in a processing chamber by disposing a heating device outside the processing chamber and providing between the heating device and the chamber a plasma producing electrode of a shape with which radiation heat from the heating device to the chamber is not interrupted. CONSTITUTION:A plasma baking oven has an opening 2 formed in a base plate 1 and includes an article holding synthetic quartz tool 4 fixed to stride the opening 2 for holding an article to be processed. A beljer type synthetic quartz chamber 7 is fixed at a lower end thereof to an inside portion of an elevator 5, and a heating device 8 is fixed onto the elevator 5. The heating device 8 includes a heater wire 10 disposed on an inside surface a heat insulation wall 9, and the outside of the heat insulation wall 9 is surrounded by a stainless casing and the like. In contrast, a plasma producing electrode 11 is disposed on an outer periphery of the chamber 7. The plasma producing electrode 11 is composed of a plurality of band electrodes 11a... extending vertically and disposed circumferentially.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma baking furnace used for curing a film applied on the surface of an object to be processed such as a semiconductor wafer or a glass substrate.

[0002]

_2. Description of the Related Art As a method for forming SiO ₂ , phosphosilicate glass (PSG), boron phosphosilicate glass (BPSG), a nitride film, etc. on a semiconductor wafer, or a SiO ₂ film on the surface of a glass substrate, A method of applying a coating solution for forming the above-mentioned coating on the surface of a substrate and then curing it in a baking oven has been conventionally used.

In the structure of the conventional baking furnace, a reaction chamber is fixed on a base plate, a heater is arranged on the outer periphery of the reaction chamber, and a large number of objects to be processed are held in the reaction chamber from below. A tool can be inserted and the inside of the reaction chamber is depressurized to evaporate and remove the solvent in the coating film formed on the surface of the object to be treated, and then heat to perform curing.

[0004]

By the way, it has been found that when the above curing is performed in a plasma atmosphere, the film quality is improved. However, the conventional plasma processing apparatus has a structure in which a cylindrical or half-split cylindrical electrode is arranged on the outer periphery of the chamber. When a heater is arranged outside such a plasma processing apparatus,
The heat from the heater is blocked by the electrodes, and the temperature inside the chamber cannot be raised. When the electrodes are arranged outside the heater, it becomes difficult to generate plasma in the chamber.

[0005]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, according to the present invention, a heating device is arranged outside a processing chamber provided on a base plate, and the heating device is connected to the chamber between the heating device and the chamber. A plasma generating electrode having a shape that does not block the radiant heat is provided, for example, a plasma generating electrode including a plurality of strip-shaped or rod-shaped electrodes.

[0006]

[Function] While the inside of the chamber is heated to a high temperature by the heating device arranged outside the chamber, the plasma is generated in the chamber by the electrode for plasma generation, and the object to be processed in the chamber is exposed to high vacuum, high temperature and Curing is performed in a plasma atmosphere.

[0007]

Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is a vertical cross-sectional view of a plasma baking furnace according to the present invention, FIG. 2 is a perspective view of a chamber, and FIG. 3 is a plan view showing an arrangement example of electrodes for plasma generation.

In the plasma bake furnace, an opening 2 is formed in a base plate 1, a pipe (not shown) connected to a vacuuming device is attached to the opening 2, and a workpiece holder 4 made of synthetic quartz or the like is provided so as to straddle the opening 2. The workpiece W such as a semiconductor wafer or a glass substrate is fixed to the workpiece holder 4
Is set.

An elevating body 5 is disposed outside the workpiece holder 4. The elevating body 5 can be moved up and down by a cylinder unit (not shown), and an annular seal member 6 is attached to the lower surface thereof.

A lower end of a bell jar type chamber 7 made of synthetic quartz or the like is fixed to the inside of the lifting body 5, and a heating device 8 is fixed on the lifting body 5. This heating device 8
Arranges the heater wire 10 on the inner surface of the heat insulating wall 9,
The outside of the is surrounded by a stainless steel case.

In FIG. 1, the chamber 7 and the heating device 8 are vertically movable with respect to the base plate 1 and the workpiece holder 4 is fixed to the base plate 1. However, the chamber 7 and the heating device 8 are fixed to the base plate 1. However, the workpiece holder 4 may be movable up and down through the opening 2 formed in the base plate 1.

On the other hand, a plasma generating electrode 11 is arranged on the outer periphery of the chamber 7. The plasma generating electrode 11 is composed of a plurality of (six in the illustrated example) strip-shaped electrodes 11a ... Which extend in the vertical direction and are arranged in the circumferential direction. Then, a predetermined number (four in the illustrated example) of the strip-shaped electrodes 11a are connected to the high frequency power source 12, and the remaining strip-shaped electrodes (two in the illustrated example) are grounded. Also, the strip electrode 11a
The upper end of ... is fitted into the locking portion 13 formed in a part of the chamber 7, and the portion that enters the inside of the locking portion 13 has a slit 11b for preventing the locking portion 13 from being damaged by thermal expansion. Is formed. The strip electrode 11a
The number of electrodes is arbitrary, and which strip electrode is used for the high frequency power source 1
It may be connected to 2 as well, and a rod-shaped electrode may be used instead of the strip-shaped electrode.

4 and 5 show another embodiment of the plasma generating electrode 11. In the plasma generating electrode 11 shown in FIG. 4, between the upper and lower end portions of the strip electrodes 11a connected to the high frequency power source 12. , And the upper and lower ends of the grounded strip electrodes 11a ... Are electrically connected to generate plasma more uniformly in the chamber 7. The plasma generating electrode 11 shown in FIG. 5 is a cylindrical mesh electrode. The tubular plasma generating electrode 11 may be formed of punching metal instead of the mesh electrode.

FIG. 6 shows another embodiment in which the chamber 7 and the heating device 8 are independently moved up and down. That is, the heating device 8 is supported on an elevating / lowering body 14 different from the elevating / lowering body 5 supporting the chamber 7, and immediately after the curing, the heating device 8 is supported.
By raising only the temperature inside the chamber 7, the temperature inside the chamber 7 can be quickly lowered, and at low temperature (about 200 ° C.)
That is, only the solvent can be evaporated at a temperature at which the condensation reaction does not occur, and the film strength can be increased.

[0015]

As described above, according to the present invention,
An electrode for plasma generation is provided on the outer circumference of the processing chamber, and a heating device is arranged outside this electrode. Moreover, the shape of the electrode is radiated from the heating device to the chamber such as a band, rod, punching or mesh. Since the heat is not shielded, the curing process can be performed in the plasma atmosphere, and the film quality can be effectively improved.

[Brief description of drawings]

FIG. 1 is a vertical sectional view of a plasma baking furnace according to the present invention.

FIG. 2 is a perspective view of a chamber

FIG. 3 is a plan view showing an arrangement example of plasma generation electrodes.

FIG. 4 is a view similar to FIG. 2 showing another embodiment of the plasma generating electrode.

5 is a view similar to FIG. 2 showing another embodiment of the plasma generating electrode.

FIG. 6 is a vertical sectional view of a plasma bake furnace according to another embodiment.

[Explanation of symbols]

1 ... Base plate, 2 ... Aperture, 4 ... Object holder
5, 14 ... Elevating body, 7 ... Chamber, 8 ... Heating device, 1
DESCRIPTION OF SYMBOLS 1 ... Plasma generating electrode, 11a ... Strip electrode, 12 ... High frequency power supply.

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] November 17, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction content]

FIG. 6 shows another embodiment in which the chamber 7 and the heating device 8 are independently moved up and down. That is, the heating device 8 is supported on another lift 14 and the lifting member 5 for supporting the chamber 7, by raising only the pressure heat system 8 before curing, quickly lowering the temperature in the chamber 7 In addition, the solvent can be evaporated at a low temperature (about 200 ° C.), that is, at a temperature at which the condensation reaction does not occur, and the film strength can be increased.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] 0015

[Correction method] Change

[Correction content]

[0015]

As described above, according to the present invention,
An electrode for plasma generation is provided on the outer circumference of the processing chamber, and a heating device is arranged outside this electrode. Moreover, the shape of the electrode is radiated from the heating device to the chamber such as a band, rod, punching or mesh. Since the heat is not shielded, the curing process can be performed in the plasma atmosphere, and the film quality can be effectively improved. If the plasma bake furnace of the present invention is used, coating
The treated coating is first plasma treated to
Solvent in the coating by modification and subsequent heat treatment
Can also be removed by volatilization. ─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] December 17, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction content]

FIG. 6 shows another embodiment in which the chamber 7 and the heating device 8 are independently moved up and down. That is, the heating device 8 is supported on an elevating / lowering body 14 different from the elevating / lowering body 5 that supports the chamber 7, and only the heating device 8 is raised before curing, so that the temperature in the chamber 7 can be rapidly lowered. It is possible to evaporate only the solvent at a low temperature (about 200 ° C.), that is, at a temperature at which the condensation reaction does not occur, and the film strength can be increased.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] 0015

[Correction method] Change

[Correction content]

[0015]

As described above, according to the present invention,
An electrode for plasma generation is provided on the outer circumference of the processing chamber, and a heating device is arranged outside this electrode. Moreover, the shape of the electrode is radiated from the heating device to the chamber such as a band, rod, punching or mesh. Since the heat is not shielded, the curing process can be performed in the plasma atmosphere, and the film quality can be effectively improved. If the plasma bake furnace of the present invention is used, coating
The coated film is first treated by plasma treatment.
Of the melt in the coating by modifying the
It is also possible to volatilize and remove the agent.

Claims (4)

[Claims] 1. A chamber fixedly mounted on the base plate so as to surround the opening formed in the base plate or capable of moving up and down with respect to the base plate, and facing the inside of the chamber through the opening formed in the base plate or the base plate. A workpiece holder fixedly installed so as to straddle the formed opening, a heating device arranged outside the chamber, and radiation from the heating device to the chamber arranged between the chamber and the heating device. A plasma bake furnace comprising a plasma generating electrode having a shape that does not block heat. 2. The plasma generating electrode is composed of a plurality of strip-shaped or rod-shaped electrodes extending in the vertical direction, and these strip-shaped or rod-shaped electrodes are circumferentially arranged on the outer surface of the chamber. 1. The plasma bake oven according to 1. 3. Among the plurality of strip-shaped or rod-shaped electrodes forming the plasma generating electrode, electrodes connected to a high frequency power source are electrically connected between upper end portions and between lower end portions,
The plasma bake furnace according to claim 2, wherein the electrodes to be grounded are electrically connected between upper end portions and between lower end portions. 4. The plasma baking furnace according to claim 1, wherein the plasma generating electrode is a cylindrical punching electrode or mesh electrode arranged so as to surround the outer circumference of the chamber.