JPS60200549A - High heat dissipation ic package - Google Patents

Abstract

PURPOSE:To raise a heat dissipation efficiency by forming a heat dissipation through hole of a low thermal resistor connected with the surfaces of a die attach unit and an IC package. CONSTITUTION:A window hole 17 for containing an IC chip 16 is opened at the center by pressing, heat dissipation through holes 19 connected with die attach unit 14 are opened at both sides, the holes 19 are buried by printing with a material having preferable thermal conductivity such as tungsten, and a conductor pattern 20 is radially formed on the upper surface. When an IC package containing the chip 16 is mounted on an electronic circuit substrate to perform a logic operation. Then, the heat generated from the chip 16 is dissipated from the dia attach unit 14 through heat dissipation through holes 9, 23 to the surface of the package via low thermal resistance thermal conductivity passage, conducted through the unit 14 to the first insulating layer 13, the second insulating layer 15 and the third insulating layer 21 and dissipated from the surface of the IC package.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an IC package structure with high heat dissipation.

[Prior art]

In electronic devices, as IC elements become more highly integrated and operate at higher speeds, power consumption increases and the amount of heat generated per unit area or volume increases. Therefore, it is necessary to efficiently remove the heat generated by the IC elements. is occurring.

Therefore, conventionally, as an IC package structure for heat dissipation means,
The heat generated from the IC chip is conducted to the ceramic insulating layer through the die attach area and dissipated from the package surface.If it is necessary to further improve the heat dissipation effect, attach heat dissipation fins etc. to the package surface to expand the heat dissipation area. And we have achieved this.

Hereinafter, a conventional IC package will be explained in detail based on FIG. 1. In the same figure, 1 is an IC chip, and 2 is a die attach part 3 on which the IC chip 1 is mounted, which is formed by forming a pattern on the center surface of tungsten. The first one made of ceramic
An insulating layer 4 is a second insulating layer made of ceramic laminated on the first insulating layer 3, and has a window hole 5 for storing the IC chip 1 in the center, and a hole in the window hole 5 for storing the IC chip 1. A conductor pattern 6 is formed using tungsten radially from the edge.

T is a third ceramic layer laminated on the second insulating layer 4.
In the insulating layer, a window hole 8 of a size such that the starting end of the conductor pattern 6 can be partially exposed for wire bonding is formed in the center, and a seal ring 9 is provided around the periphery of the window hole 8.
A metallized part is provided for fixing. 10 is a wire, 11 is a conductor pattern for external connection, and 12 is a cap.

Next, to explain the operation of the above structure, as shown in FIG. After providing an external connection conductor pattern 11 that connects to the terminal end of the conductor pattern 6 of the second insulating layer 4, the IC package is constructed by collectively sintering.

After mounting and fixing the IC chip 1 on the die attach section 3 by die bonding, the IC chip 1 is
The electrodes of the chip 1 and the pads for wire bonding provided at the starting end of the conductor pattern 6 are connected to the wire 10, and the metallized portion provided around the window hole 8 of the third insulating layer 7 is coated with Kovar. A seal ring 9 is fixed by brazing, and a cap 12 is placed over the upper edge of the seal ring 9 to hermetically seal the IC chip 1.

When the IC package housing the IC chip 1 is mounted on an electronic circuit board and performs a logical operation, the heat generated from the IC chip 1 is mainly transferred to the first
Conducted to the insulating layer 2, the second insulating layer 4 and the third insulating layer 7
C. Heat is dissipated from the package surface.

However, such conventional IC packages
Even when heat is dissipated from the surface of the C package or when heat dissipation fins are attached to the surface of the IC package, the thermal conductivity of ceramic, which is the base material of the IC package, is comparable to that of metal materials such as tungsten. Since it is small to begin with, there is a limit to how much heat from the IC chip can be transferred to the surface of the IC package. That is, there is a drawback in that there is a limit to the cooling capacity of the IC package itself due to its heat dissipation.

[Purpose of the invention]

The present invention has been made to solve the above-mentioned drawbacks, and its purpose is to improve heat dissipation efficiency by providing a heat dissipation through hole with low thermal resistance that connects the die attach section and the surface of the IC' package. be.

[Summary of the invention]

In order to achieve the above-mentioned object, the present invention forms a die attach part wider than the storage window hole of the second insulating layer in the first insulating layer, and a heat dissipation through hole with low thermal resistance connected to the die attach part. The third insulating layer is characterized in that a heat dissipating through hole with low thermal resistance is provided in the second insulating layer and connected to a heat dissipating through hole in the second insulating layer.

〔Example〕

An embodiment of the present invention will be described below based on Fig. 2 of the Asahi diagram.

FIG. 2 is a cross-sectional view of this embodiment. Reference numeral 13 denotes a first insulating layer made of ceramic, and a die attach portion 14 is patterned on the center surface using tungsten.

15 is a second insulating layer made of ceramic that is laminated on the first insulating layer 13, and an IC chip 16 is placed in the center by press working.
A storage window hole 17 is bored and the die attach part 14 is opened.
Heat dissipation through holes 19 are formed on both sides to connect with the heat dissipation through holes 19, and the heat dissipation through holes 19 are filled with a material having good thermal conductivity, such as tungsten, by printing, and conductive patterns 20 are also formed radially on the upper surface.

Reference numeral 21 denotes a third insulating layer made of ceramic to be laminated on the second insulating layer 15, and a window hole is formed in the third insulating layer by press processing to a size that allows part of the starting end of the conductive pattern 20 to be exposed for wire bonding. At the same time, a heat dissipation through hole 23 is bored on both sides to connect with the heat dissipation through hole 19, and the heat dissipation through hole 23 is filled with a material having good thermal conductivity, such as tungsten, by printing. A metallized portion for fixing the seal ring 24 is printed on the periphery of the window hole 220. 25 is a wire, 26
2 is a conductor pattern for external connection, and 27 is a cap.

Note that the width of the die attach portion 14 is the same as that of the seal ring 24.
The heat radiation through hole 19 of the second insulating layer 15 is not electrically connected to the conductor pattern 20. Furthermore, in this embodiment, two heat dissipating through poles 19 and 23 are connected, but the number is not limited to this.

Next, to explain the operation of the above structure, as shown in FIG. After providing a conductor pattern 26 for external connection to be connected to the end of the conductor pattern 20 of the second insulating layer 15, the IC is sintered all at once.
Configure the package.

After the IC chip 16 is mounted and fixed on the die attach portion 14 by die bonding, the IC chip 16 is
The electrode and the wire bonding pad provided at the starting end of the conductive pattern 20 are connected by a wire 25, and a Kovar seal 1 non-stick 24 is attached to the metallized portion provided around the window hole 22 of the third insulating layer 21. are fixed by brazing, and a cap 21 is placed over the upper edge of the seal ring 24 to hermetically seal the IC chip 16.

When the IC package containing the IC chip 16 is mounted on an electronic circuit board and performs a logical operation, the heat generated from the IC chip 16 is dissipated through the heat dissipation through holes 19 and 23.
The heat is radiated from the IC package surface through a low thermal resistance heat conduction path from the die chip section 14 to the IC package surface through the die attach section 14.
The heat is conducted to the insulating layer 13, the second insulating layer 15, and the third insulating layer 21, and is radiated from the surface of the IC package.

If it is desired to further increase the heat dissipation efficiency, as shown in another embodiment shown in FIG.
By connecting the heat dissipation through holes 32 and 33 of the second insulating layer 30 and the third insulating layer 31 to The heat dissipation efficiency may be increased by forming a heat conduction path and using the cap 28 as a heat dissipation fin.

The heat dissipation through hole 19.32 is connected to the conductor pattern 2.
0.35 to lower the potential of the die attach portion 14.34 to the lowest potential.

〔Effect of the invention〕

As described above, according to the high heat dissipation IC package according to the present invention, a die attach portion wider than the storage window hole of the second insulating layer is formed in the first insulating layer, and a low thermal resistance A heat dissipation through hole is provided in the second insulating layer, and the second
By providing a heat dissipation through hole with low thermal resistance in the third insulating layer that connects with the heat dissipation through hole in the insulating layer, the heat from the IC chip is radiated through the heat dissipation through hole through the die attach part, so that it is not possible to dissipate heat from the IC chip as in the conventional method. Ceramic Chiku1 Zetsuroku Layer, Fue 2 Zetsuroku Layer, &/I Takul Layer Heat dissipation efficiency is higher than heat dissipation through the ceramic wire, which facilitates high integration of IC chips. In addition, by connecting the heat dissipation through hole and the seal ring, the camp can be used as a substitute for the heat dissipation fin, which has the effect of further increasing the heat dissipation effect and enabling higher integration of IC chips. be.

In addition, by providing a heat dissipation through hole, the heat dissipation
This has the effect of easily lowering the potential of the die attach portion to the lowest potential by connecting the through hole and the conductor pattern.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a conventional example, FIG. 2 is a sectional view showing one embodiment of the present invention, and FIG. 3 is a sectional view showing another embodiment. 13... First insulating layer 14... Die attach part 1
5゜30...Second insulating layer 16...IC chip 1
7... Storage window hole 19, 23, 32, 33... Heat radiation through hole 21. 31... Third insulating layer 22.
...For window hole patent applicant: Oki Electric Industry Co., Ltd. agent Patent attorney: Takashi Kanakura

Claims (1)

[Scope of Claims] 1. A first insulating layer in which a die attach portion is formed, a second insulating layer in which a window hole for accommodating an IC chip is formed, and a third insulating layer in which a window hole is formed are laminated; In an IC package in which an IC chip is mounted on a die attach portion of a first insulating layer, the first
A die attach portion wider than the storage window hole of the second insulating layer is formed in the insulating layer, a heat dissipation through hole with low thermal resistance is provided in the second insulating layer to connect with the die attach portion, and the heat dissipation through hole of the second insulating layer is connected to the die attach portion. A high heat dissipation IC package characterized in that by providing a heat dissipation through hole with low thermal resistance to be connected in the third insulating layer, heat from the IC chip is dissipated through the heat dissipation through hole through the die attach part. . 2. The high heat dissipation IC package according to claim 1, wherein each of the heat dissipation through-holes is made of a material with good heat conductivity and has a hole filler dimension on the left.