JPS60198720A - 液相エピタキシヤル結晶成長装置 - Google Patents

液相エピタキシヤル結晶成長装置

Info

Publication number
JPS60198720A
JPS60198720A JP5670984A JP5670984A JPS60198720A JP S60198720 A JPS60198720 A JP S60198720A JP 5670984 A JP5670984 A JP 5670984A JP 5670984 A JP5670984 A JP 5670984A JP S60198720 A JPS60198720 A JP S60198720A
Authority
JP
Japan
Prior art keywords
slider
chamber
opening
epitaxial growth
boat body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5670984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260052B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takao Oda
織田 隆雄
Mari Kato
加藤 眞理
Kotaro Mitsui
三井 興太郎
Susumu Yoshida
進 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5670984A priority Critical patent/JPS60198720A/ja
Publication of JPS60198720A publication Critical patent/JPS60198720A/ja
Publication of JPH0260052B2 publication Critical patent/JPH0260052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5670984A 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置 Granted JPS60198720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5670984A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5670984A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS60198720A true JPS60198720A (ja) 1985-10-08
JPH0260052B2 JPH0260052B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-14

Family

ID=13035002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5670984A Granted JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS60198720A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH0260052B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-14

Similar Documents

Publication Publication Date Title
JPS60198720A (ja) 液相エピタキシヤル結晶成長装置
US3990392A (en) Epitaxial growth apparatus
JPS61144016A (ja) 液相エピタキシヤル結晶成長装置
GB1181101A (en) Improvements in or relating to the Epitaxial Deposition of a Semiconductor Material
JPS6359529B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6273625A (ja) 液相エピタキシヤル成長装置
US3648654A (en) Vertical liquid phase crystal growth apparatus
JPS63169724A (ja) 液相エピタキシヤル成長装置
JPS61123131A (ja) 液相エピタキシヤル結晶成長装置
US5264190A (en) Liquid phase epitaxial film growth apparatus
JPH0580439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH027884Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6077193A (ja) 液相エピタキシヤル結晶成長装置
JPS5918644A (ja) 液相エピタキシヤル成長装置
JPS5919920B2 (ja) 液相エピタキシヤル成長装置
JPS62219918A (ja) 液相エピタキシヤル成長装置
JPS57196528A (en) Liquid-phase growing device
JPS5797665A (en) Manufacture of npn transistor
Bowles The geochemical role of primary copper-sulphur mineralization in the crystallization of the Freetown (Sierra Leone) layered gabbro
JPH01160895A (ja) 液相エピタキシャル成長用スライドボート
JPH0483791A (ja) 液相エピタキシャル結晶育成法
JPS621358B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2823760B2 (ja) 液相エピタキシャル成長装置
JPS5785222A (en) Semiconductor manufacturing device
JPS5941959B2 (ja) 液相エピタキシャル成長装置