JPS60197960A - Manufacture of optical memory element - Google Patents

Manufacture of optical memory element

Info

Publication number
JPS60197960A
JPS60197960A JP5384384A JP5384384A JPS60197960A JP S60197960 A JPS60197960 A JP S60197960A JP 5384384 A JP5384384 A JP 5384384A JP 5384384 A JP5384384 A JP 5384384A JP S60197960 A JPS60197960 A JP S60197960A
Authority
JP
Japan
Prior art keywords
film
glass substrate
mask
guide
mask plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5384384A
Other languages
Japanese (ja)
Other versions
JPH0585972B2 (en
Inventor
Kenji Oota
賢司 太田
Toshihisa Deguchi
出口 敏久
Akira Takahashi
明 高橋
Tetsuya Inui
哲也 乾
Junji Hirokane
順司 広兼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5384384A priority Critical patent/JPS60197960A/en
Priority to EP85102922A priority patent/EP0155000B1/en
Priority to DE8585102922T priority patent/DE3583754D1/en
Priority to CA000476648A priority patent/CA1225467A/en
Publication of JPS60197960A publication Critical patent/JPS60197960A/en
Priority to US07/017,456 priority patent/US4778747A/en
Publication of JPH0585972B2 publication Critical patent/JPH0585972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261Preparing a master, e.g. exposing photoresist, electroforming

Abstract

PURPOSE:To obtain an element having high accuracy by applying a flexible photoresist film to a glass substrate, superposing a metallic film mask on which a guide pattern has been formed, on said film surface, irradiating ultraviolet rays, using a pattern transferred to the resist film as a mask, and etching the substrate. CONSTITUTION:A flexible photoresist film 2 is applied onto a glass substrate 1, a mask plate 3 which has pinched a metallic film having a removed part in a shape of a guide pattern between a mask use glass substrate and a flexible resin material is made to adhere tightly and superposed on the film 2, ultraviolet rays A are irradiated as indicated with an arrow, and the guide pattern is transferred to the resist film 2. After removing the mask 3 and developing the film 2, the substrate 1 is etched by using the film 2 as a mask and a groove 4 is formed on the substrate 1, and therefore, the film 2 is removed. In this way, the guide pattern is formed directly on the glass substrate, on which a necessary recording layer, etc. are formed, and a precise optical memory element is obtained with a good productivity.

Description

【発明の詳細な説明】 く技術分野〉 本発明は光学的に情報を記録再生する光メモリ素子の製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method of manufacturing an optical memory element for optically recording and reproducing information.

〈従来技術〉 近年、光メモリ装置は高密度で大容量のメモリ装置とし
て注目されている。この光メモリが高密度及び大容量と
なる理由は、情報の記録単位であるビットが光のビーム
径だけで決まるため、その形状を1μm程度の大きさに
することができるからである。しかしこの事は光メモリ
装置に多くの制限を加える事になる。即ちある定まった
場所に情報を記録したシ、あるいはある定まった場所に
記録された情報を再生したりするためには光ビームを極
めて正確に位置決めしなければならなくなる。一般に再
生専用の光メモリでは記録したビットに予め番地情報を
入れておく事ができるので記録情報を再生しながら光1
−ムの位置決めをすることができるが、追加記録メモリ
あるいは書き換え可能なメモリにおいては情報記録時に
番地情報まで一緒に記録する事は極めて困難である。従
って追加記録メモリあるいは書き換え可能なメモリでは
メモリ基板に予め何等かのガイドトラック及びガイド番
地を入れておくという方法が採られている。例えば第7
図に従来の追加記録メモリあるいは書き換え可能なメモ
リのメモリ基板の一部斜視図を示すが同図に示す如く基
板に凹凸の溝を形成しておきこの溝に添って情報を記録
あるいは再生する方法が一般的である。上記凹凸の溝は
円周方向に断続した形状を有しこれが溝の番地を示すビ
ット情報を与える。この凹凸の溝の形成方法はすでに何
種類か提案されており、大きく分けて次の3種類がある
。即ち (i) アクリル樹脂又はポリカーボネイト樹脂を用い
、射出成形によって上記溝を作成する方法。この成形に
よりガイドトラック及びガイド番地を予め形成したNi
 スタンパ−の形状を写し取る。
<Prior Art> In recent years, optical memory devices have attracted attention as high-density, large-capacity memory devices. The reason why this optical memory has a high density and a large capacity is that the bit, which is the unit of recording information, is determined only by the beam diameter of the light, so its shape can be reduced to a size of about 1 μm. However, this imposes many limitations on the optical memory device. That is, in order to record information at a certain fixed location or to reproduce information recorded at a certain fixed location, the light beam must be positioned extremely accurately. In general, in playback-only optical memory, address information can be stored in the recorded bits in advance, so while playing back the recorded information, the optical
However, in an additional recording memory or a rewritable memory, it is extremely difficult to record address information at the same time as recording information. Therefore, in the case of additional recording memory or rewritable memory, a method is adopted in which some guide tracks and guide addresses are stored in advance on the memory board. For example, the seventh
The figure shows a partial perspective view of a memory board of a conventional additional recording memory or rewritable memory.As shown in the figure, uneven grooves are formed on the board and information is recorded or reproduced along these grooves. is common. The uneven groove has a shape that is interrupted in the circumferential direction, and this provides bit information indicating the address of the groove. Several methods for forming the uneven grooves have already been proposed, and can be roughly divided into the following three types. That is, (i) a method of creating the grooves by injection molding using acrylic resin or polycarbonate resin. Through this molding, the guide track and guide address were formed in advance on the Ni
Copy the shape of the stamper.

(11)アクリル樹脂を上記ガイドトラック及びガイド
番地を予め形成したNi スタンパ−に流し込み温度を
かけて固まらせるキャスティング法。
(11) A casting method in which acrylic resin is poured into the Ni stamper on which the guide tracks and guide addresses have been formed in advance, and is heated to harden it.

(ni) アクリル樹脂基板やガラス基板等の基板と上
記ガイドトラック及びガイド番地を予め形成したNiス
タンパ−との間に紫外線硬化形の樹脂を流し込み、上記
基板ごしに紫外線を照射し、その樹脂を硬化させ、その
後で上記Niスタンパ−を取シはすす、所謂2P法。
(ni) An ultraviolet curable resin is poured between a substrate such as an acrylic resin substrate or a glass substrate and the Ni stamper on which the guide tracks and guide addresses have been formed in advance, and ultraviolet rays are irradiated through the substrate to cure the resin. The soot is cured, and then the Ni stamper is removed, the so-called 2P method.

である。It is.

しかし、これらの方法はいずれも樹脂を用いるのでその
樹脂を通して酸素あるいは水分等が記録媒体に達する危
険性がある。この為記録媒体の品質が劣化するという欠
点を有する。この欠点に対処する為に本発明者は既にガ
ラス基板上にフォトレジスト材を塗布し、該フォトレジ
スト材に対してレーザ光を照射してガイドパターン(ガ
イドトラック及びガイド番地)を記録し、その後エツチ
ングによってガイドパターン状に溝を形成する方法を特
願昭58−84618号によって提案している。
However, since all of these methods use resin, there is a risk that oxygen, moisture, etc. may reach the recording medium through the resin. This has the disadvantage that the quality of the recording medium deteriorates. In order to deal with this drawback, the present inventor has already coated a photoresist material on a glass substrate, irradiated the photoresist material with laser light to record a guide pattern (guide track and guide address), and then Japanese Patent Application No. 58-84618 proposes a method of forming grooves in the shape of a guide pattern by etching.

しかしこの方法ではレーザ光によって各ガイドパターン
をトラック毎に順次記録していかねばなら許いのでその
記録に長い時間を要し、量産には不向きであるという欠
点がある。
However, this method has the disadvantage that each guide pattern must be sequentially recorded track by track using a laser beam, which requires a long time for recording and is not suitable for mass production.

〈目 的〉 本発明は以上の点に鑑みなされたものであυ、上記特願
昭58−84618号に記載された製造に改良を加える
ことによって、光メモリ素子の基板に対するガイドトラ
ック、ガイド番地等の情報を示す溝の形成を短時間でし
かも精密に行ない得る新規な製法を提供することをその
目的とする。
<Purpose> The present invention has been made in view of the above points, and by improving the manufacturing described in the above-mentioned Japanese Patent Application No. 58-84618, guide tracks, guide addresses, etc. for the substrate of an optical memory element can be manufactured. The purpose is to provide a new manufacturing method that can form grooves indicating information in a short time and with precision.

〈実施例〉 以下本発明に係る光メモリ素子の製造方法の実施例を図
面を用いて詳細に説明する。
<Example> Hereinafter, an example of the method for manufacturing an optical memory element according to the present invention will be described in detail with reference to the drawings.

第1図は、本発明に係る光メモリ素子の基板の製法を工
程順に示す説明図である。
FIG. 1 is an explanatory diagram showing, in order of steps, a method for manufacturing a substrate of an optical memory element according to the present invention.

次に同図に従い本発明に係る光メモリ素子の基板の製法
の一実施例を工程順に説明する。
Next, an embodiment of a method for manufacturing a substrate of an optical memory element according to the present invention will be explained in the order of steps with reference to the same figure.

工程(1)・・・酸素、水分等の通過に対して信頼性の
高い(酸素、水分等を通過させない)光メモリ素子用の
ガラス基板を洗浄し、そのガラス基板星の上にフォトレ
ジスト膜2を塗布する(第1図(a))。このフォトレ
ジスト膜2の膜厚は1100n〜500nm程度が好ま
しい。
Step (1)...A glass substrate for an optical memory element that is highly reliable against the passage of oxygen, moisture, etc. (does not allow oxygen, moisture, etc. to pass through) is cleaned, and a photoresist film 2 is placed on the glass substrate. (Fig. 1(a)). The thickness of this photoresist film 2 is preferably about 1100 nm to 500 nm.

工程(11)・・・上記フォトレジスト膜2を塗布した
ガラス基板!上に後述するガイドトラック及びガイド情
報をパターン化したマスク板8を密着せしめ、該マスク
板3ごしに紫外線Aを照射しマスク板3のマスクパター
ンを上記フォトレジスト膜2に転写する(第1図(b)
)。ここで光メモリ素子は円板状であるので上記マスク
板8も円板状でおることが望ましい。
Step (11)...Glass substrate coated with the photoresist film 2! A mask plate 8 patterned with guide tracks and guide information, which will be described later, is brought into close contact with the mask plate 3, and ultraviolet A is irradiated through the mask plate 3 to transfer the mask pattern of the mask plate 3 onto the photoresist film 2 (the first Figure (b)
). Here, since the optical memory element is disk-shaped, it is desirable that the mask plate 8 is also disk-shaped.

工程(iN)・・・上記マスクパターンを書き込んだフ
ォトレジスト膜2を現像工程に通すことで上記フォトレ
ジスト膜2に溝を形成する (第1図(c))0 工程軸・・・上記溝を形成したフォトレジスト膜2の被
覆状態において、ウェットエツチング若しくはCF4 
、 CHF3等のエツチングガス中でのスパッタリング
(リアクティブイオンエツチング)等のドライエッチン
グを行ないガラス基板lに溝4を形成する(第1図(d
) ) 。
Step (iN): forming a groove in the photoresist film 2 by passing the photoresist film 2 on which the mask pattern has been written through a development process (FIG. 1(c)) 0 Process axis: the above groove Wet etching or CF4
, Dry etching such as sputtering (reactive ion etching) in an etching gas such as CHF3 is performed to form grooves 4 in the glass substrate l (see Fig. 1(d)).
)).

工程(V)・・・上記レジスト膜2をアセトン等の溶媒
Step (V): The resist film 2 is coated with a solvent such as acetone.

02中でのスパッタリング等によシ除去する。この結果
ガラス基板1に溝4が残る(第1図(e))。
It is removed by sputtering etc. in 02. As a result, grooves 4 remain in the glass substrate 1 (FIG. 1(e)).

以上の工程によってガイドトラック及びガイド番地の情
報を示す溝を有するガラス基板が完成する。この工程に
よれば予めガイドトラック及びガイド情報をパターン化
したマスク板を作成しておき、該マスク板をフォトレジ
スト膜が塗布されたガラス基板上に順次密着せしめてマ
スク板のノ(ターンを転写して行けばよいのでガイドパ
ターンの記録時間を極めて短縮化できるものである。こ
こで上記マスク板と上記フォトレジスト膜が塗布された
ガラス基板とはパターンを高精度に転写する為に密着さ
せる必要があるが、ガラス基板には一般的に数10μm
以上のそりがあるのでマスク板とガラス板との間に圧力
を加えても密着し難いものであるが、本発明に係るマス
ク板は以下に示す独特の構造によってその問題点を解決
している。
Through the above steps, a glass substrate having grooves indicating guide track and guide address information is completed. According to this process, a mask plate patterned with guide tracks and guide information is created in advance, and the mask plate is successively brought into close contact with a glass substrate coated with a photoresist film to transfer the turns of the mask plate. This allows the recording time of the guide pattern to be extremely shortened.The mask plate and the glass substrate coated with the photoresist film must be in close contact with each other in order to transfer the pattern with high precision. However, glass substrates generally have a thickness of several tens of μm.
Due to the warpage described above, it is difficult to achieve close contact between the mask plate and the glass plate even if pressure is applied between the mask plate and the glass plate. However, the mask plate according to the present invention solves this problem with the unique structure shown below. .

次に上記マスク板の製法について工程順に詳細に説明す
る。
Next, the manufacturing method of the mask plate described above will be explained in detail in the order of steps.

第2図はマスク板の製法を示す説明図である。FIG. 2 is an explanatory diagram showing a method of manufacturing a mask plate.

工程(1)・・・まず円板状の低反射Crマスクブラン
ク5を準備する。第2図(、)はそのマスクブランク5
の一部側面断面図である。6は紫外線を良く通す石英ガ
ラス基板(紫外線Aの種類によっては通常のソーダライ
ムガラスを精度良く研磨したものでも良い)、7は該ガ
ラス基板6よシ充分な可撓性を有する紫外線硬化形の樹
脂層、8aはCrOx膜、9はCr膜、8bはCrOx
膜である。このマスクブランク5の構造としては、Cr
単層膜やCr膜、CrOx膜の2層膜の構造であうでも
構わない。
Step (1): First, a disc-shaped low-reflection Cr mask blank 5 is prepared. Figure 2 (,) shows the mask blank 5.
FIG. 6 is a quartz glass substrate that allows ultraviolet rays to pass through (depending on the type of ultraviolet ray A, a well-polished ordinary soda lime glass may be used), and 7 is an ultraviolet curing type that has sufficient flexibility than the glass substrate 6. Resin layer, 8a is CrOx film, 9 is Cr film, 8b is CrOx
It is a membrane. The structure of this mask blank 5 is Cr.
The structure may be a single layer film or a two-layer film structure such as a Cr film or a CrOx film.

工程(11)・・・上記マスクブランク5上にフォトレ
ジスト膜10をコートする(第2図(b))。このフォ
トレジスト膜10としては例えば5hipleF社製の
AZ−1400等のポジ型のものを使用すればよい。こ
のフォトレジスト膜10の厚みは次の工程(in)にお
いて用いるレーザ光のパワーにもよるが塗布の容易さを
考えると1100n〜500nm程度が適当である。
Step (11): A photoresist film 10 is coated on the mask blank 5 (FIG. 2(b)). As this photoresist film 10, for example, a positive type film such as AZ-1400 manufactured by 5hipleF may be used. The thickness of this photoresist film 10 depends on the power of the laser beam used in the next step (in), but from the viewpoint of ease of coating, it is appropriate to be about 1100 nm to 500 nm.

工程(fi+)・・・上記フォトレジスト膜10をコー
トしたマスクブランク5にAr レーザの光を集光して
ガイドトラック及びガイド番地を記録する(第2図(C
))。波長が4579XのArレーザを用いN、 A、
が0.75の対物レンズ11で0.5μm−程度のスポ
ット径を持つようArレーザ光を集光した場合、上記フ
ォトレジスト膜10面上で約10mWのレーザパワーを
得、0.6μm巾のトラックを記録することができる。
Step (fi+): Ar laser beam is focused on the mask blank 5 coated with the photoresist film 10 to record guide tracks and guide addresses (see FIG. 2(C)
)). Using an Ar laser with a wavelength of 4579X, N, A,
When the Ar laser beam is focused to have a spot diameter of about 0.5 μm using the objective lens 11 with Tracks can be recorded.

ここで上記パターン形成用の光としては5oooXより
短い波長のレーザであることが上記ガイドトラック及び
ガイド番地のパターンを微細化する為及びフォトレジス
ト膜IOの感度の為に適切であり、Arレーザ以外には
クリプトンレーザが有用である。
Here, as the light for forming the pattern, it is appropriate to use a laser with a wavelength shorter than 5oooX in order to miniaturize the pattern of the guide track and guide address and for the sensitivity of the photoresist film IO, and other than Ar laser. Krypton lasers are useful for this purpose.

工程翰・・・工程(1ii)によってフォトレジスト膜
10にガイドトラック及びガイド番地が記録されたマス
クブランク5を現像工程に通すことで上記フォトレジス
ト膜10に溝を形成する(第2図(d))。尚、この第
2図(d)以下第2図(f)までは横方向の倍率を大き
くしている。
Process line: Grooves are formed in the photoresist film 10 by passing the mask blank 5 on which the guide tracks and guide addresses have been recorded in the photoresist film 10 in step (1ii) to a development process (see FIG. 2(d)). )). Note that the magnification in the horizontal direction is increased from FIG. 2(d) to FIG. 2(f).

工程(V)・・・上記溝を形成したフォトレジスト膜1
0の被覆状態においてエツチングを行ない、ガラス基板
6上の所定の部分のCr膜9及びCrux膜8a 、8
bを除去する(第2図(e))。
Step (V)...Photoresist film 1 with the grooves formed
Cr film 9 and Crux films 8a, 8 are etched in predetermined portions on glass substrate 6.
b (Fig. 2(e)).

工程(VD・・・残存した上記フォトレジスト膜10を
アセトン等の溶媒、02 中でのスパッタリング等によ
シ除去する(第2図(f))。この結果、ガラス基板6
上にガイドトラック及びガイド番地の情報を示す溝を有
したCr膜9及びCrux膜8g 、8bの積層膜を得
ることができる。
Step (VD...The remaining photoresist film 10 is removed by sputtering in a solvent such as acetone, 02 (FIG. 2(f)). As a result, the glass substrate 6
It is possible to obtain a laminated film of the Cr film 9 and the Crux films 8g and 8b, each of which has grooves indicating guide track and guide address information thereon.

以上の工程によって例えば2μmピッチ、1μm幅のら
せん状のガイドトラックとガイドトラックの断続形状に
よるトラック番地が記録された円板状のマスク板を得る
。尚、トラック番地部の巾の方を狭くした方がガラス基
板lへの溝形成後番地信号品質が良くなる。
Through the above steps, a disk-shaped mask plate is obtained, in which track addresses are recorded, for example, by spiral guide tracks having a pitch of 2 μm and a width of 1 μm, and track addresses formed by the discontinuous shape of the guide tracks. Note that the narrower the width of the track address portion, the better the quality of the address signal after forming the groove on the glass substrate l.

第3図は完成したマスク板I2の外観斜視図、第4図(
a)はその一部拡大平面図、第4図(b)はそのa−a
 ’線での切断断面図を示す。第3図に示される如くマ
スク板12には中央に穴18が形成される。この穴13
によってマスク板12の製造の際の回転駆動が容易な様
に工夫されている。即ちマスク板12の上記中央の穴1
8を利用してネジ押えやマグネットチャックを行ない、
その固定保持によυマスク板12の回転動作を安定的に
行なうことができるものである。但し、マスク板12の
外周部分を保持する機構や真空吸引によりマスク板12
の面全体を保持する機構を採用する場合は必ずしも上記
マスク板の中央の穴18は必要でない。14には光メモ
リ素子のガイドトラックのパターンが形成され、15に
は光メモリ素子のガイド番地のパターンが形成される。
Figure 3 is an external perspective view of the completed mask plate I2, and Figure 4 (
a) is a partially enlarged plan view, and FIG. 4(b) is a-a
A cross-sectional view taken along the ' line is shown. As shown in FIG. 3, a hole 18 is formed in the center of the mask plate 12. This hole 13
The mask plate 12 is designed to be easily rotated when manufacturing the mask plate 12. That is, the hole 1 in the center of the mask plate 12
Use 8 to hold the screws and use the magnetic chuck.
By holding it fixedly, the rotating operation of the υ mask plate 12 can be performed stably. However, the mask plate 12 may be removed by a mechanism that holds the outer peripheral portion of the mask plate 12 or by vacuum
If a mechanism for holding the entire surface of the mask plate is adopted, the hole 18 in the center of the mask plate is not necessarily required. At 14, a pattern of a guide track of the optical memory element is formed, and at 15, a pattern of a guide address of the optical memory element is formed.

以上のマスク板】2の構成はガラス基板6上に該ガラス
基板!より充分な可撓性を有する樹脂層7を設け、その
上に紫外線が通過するようにガイドパターン状にくり抜
きがなされたCr膜等゛の反射性金属膜を積層した構造
であり、上記樹脂層7の存在によりマスク板とガラス基
板との間に機械的に圧力を加えた時、あるいは両板の間
を真空に引くことによって圧力を加えた時上記樹脂層7
の部分が撓むことによって画板が密着することができる
ものである。
The above mask plate] The structure of 2 is the glass substrate on the glass substrate 6! It has a structure in which a resin layer 7 having more sufficient flexibility is provided, and a reflective metal film such as a Cr film, which is hollowed out in a guide pattern so that ultraviolet rays can pass through, is laminated thereon. When pressure is applied mechanically between the mask plate and the glass substrate due to the presence of 7, or when pressure is applied by drawing a vacuum between the two plates, the resin layer 7
By bending this part, the drawing board can be brought into close contact with the drawing board.

尚、この構造以外にマスク板+2の構造としてガラス基
板6の代わりにガラス基板lより充分な可撓性を有する
アクリル樹脂基板を用い、該アクリル樹脂基板上にガイ
ドパターン状にくり抜きがなされたCr膜、Cr膜、C
rOx膜の2層膜、CrOx膜、Cr膜、CrOx膜の
3層膜等の反射性金属膜を積層した構造であってもよい
。この場合アクリル樹脂基板として紫外線を充分透過す
るものであることが必要である。
In addition to this structure, as the structure of the mask plate +2, an acrylic resin substrate having sufficient flexibility than the glass substrate 1 is used in place of the glass substrate 6, and a Cr substrate with a guide pattern cut out on the acrylic resin substrate is used. film, Cr film, C
A structure in which reflective metal films such as a two-layer rOx film, a three-layer film of a CrOx film, a Cr film, and a CrOx film are laminated may be used. In this case, it is necessary that the acrylic resin substrate sufficiently transmits ultraviolet rays.

次に第2図(c)において示した、Arレーザを集光し
てマスクブランク5上にコートしたフォトレジスト膜1
0にガイドトラック及びガイド番地を記録する工程を行
なう装置構成について説明する。
Next, as shown in FIG. 2(c), the photoresist film 1 coated on the mask blank 5 by focusing the Ar laser beam.
The configuration of an apparatus that performs the process of recording a guide track and a guide address in 0 will be described.

第5図にその装置構成の構成説明図を示す。Arレーザ
光源16から出た波長4579^のレーザ光は光変調器
17の効率を上げるレンズ18.光変調器+7.光変調
器17の効率を上げるレンズ19を介してビームスプリ
ッタ20に入射する。該ビームスプリッタ20で光の一
部が取り出されて光検出器21でパワーモニタされる。
FIG. 5 shows an explanatory diagram of the device configuration. A laser beam with a wavelength of 4579^ emitted from the Ar laser light source 16 is passed through a lens 18. which increases the efficiency of the optical modulator 17. Optical modulator +7. The light enters the beam splitter 20 through a lens 19 that increases the efficiency of the optical modulator 17. A portion of the light is taken out by the beam splitter 20 and its power is monitored by the photodetector 21.

この光検出器21の出力によシ上記光変調器17が制御
されレーザ光の出射パワーが一定になるように調整され
る。これはレーザ光の出射パワーが室温等の環境条件の
変動で変化するので、これを抑制する為に行なわれるも
のである。22はレーザ光の光路を変えるミラー、28
は上述したフォトレジスト膜10にガイド番地を記録す
る為に光を変調する変調器、24.25は該変調器28
の効率を上げる為のレンズである。レーザ光はミラー2
6で更に光路を変えられ、変調光モニタ用ビームスプリ
ッタ27に入射する。該変調光モニタ用ビームスプリッ
タ27で光の一部が取り出されて光検出器28でパワー
モニタされる。29は2色性ミラーであシ′、レーザ光
は該2色性ミラー29を通った後にスポットレンズ80
で集光され偏光ビームスプリッタ−81により対物レン
ズ32に導かれる。83は後述するサーボ用のHe−N
eレーザ34の波長に合わせた4分の1波長板、35は
対物レンズを上下に動かしてマスク板12の表面に常に
光が集光されるようサーボをかけるだめの対物レンズ駆
動部である。84Fiサーボ用レーザとして使用される
He−Neレーザである。該He−Neレーザ34から
出た光はミラー36で光路を変えられ、2色性ミラー2
9でAr レーザ光源16によるレーザ光路と同一の光
路に至る。ここで2色性ミラー29としてはArレーザ
波長光(4579λ)を通過せしめHe−Neレーザ波
長光(L128λ)を全反射せしめるものを用いる。父
上記偏光ビームスプリッタ−31としてはHe−Neレ
ーザ光のS波を反射し且つP波を通過せしめ、Arレー
ザ光を全反射せしめるものを用いる。87はシリンドリ
カルレンズ、88は4分割検出器である。該4分割検出
器88にはマスク板12から反射された光が入射しこの
4分割検出器88の出力によってフォーカスサーボがか
けられる。同図の点線に囲まれた部分39はエアースラ
イダー等の移動装置に乗って移動できるようになってい
る。そして回転するマスク板12の半径方向にこの移動
装置を移動しなからArレーザを操作すればらせん状の
ガイドトラックとガイド番地を潜像の形でフォトレジス
ト膜lOに記録できる。
The optical modulator 17 is controlled by the output of the photodetector 21, and the output power of the laser beam is adjusted to be constant. This is done to suppress the fact that the output power of the laser beam changes due to fluctuations in environmental conditions such as room temperature. 22 is a mirror that changes the optical path of the laser beam; 28
24 and 25 are modulators that modulate light in order to record guide addresses on the photoresist film 10 described above; 24 and 25 are the modulators 28;
This lens is designed to increase the efficiency of The laser beam is mirror 2
At step 6, the optical path is further changed and the beam enters the modulated light monitoring beam splitter 27. A part of the light is taken out by the modulated light monitoring beam splitter 27 and its power is monitored by the photodetector 28. 29 is a dichroic mirror, and after the laser beam passes through the dichroic mirror 29, it passes through a spot lens 80.
The light is focused by the polarizing beam splitter 81 and guided to the objective lens 32. 83 is He-N for servo which will be described later.
A quarter wavelength plate 35 matches the wavelength of the e-laser 34, and an objective lens drive section 35 serves to move the objective lens up and down and apply servo so that the light is always focused on the surface of the mask plate 12. This is a He-Ne laser used as an 84Fi servo laser. The optical path of the light emitted from the He-Ne laser 34 is changed by a mirror 36, and the light path is changed by a dichroic mirror 2.
At step 9, the optical path reaches the same optical path as the laser optical path of the Ar laser light source 16. Here, as the dichroic mirror 29, one is used that allows Ar laser wavelength light (4579λ) to pass through and totally reflects He-Ne laser wavelength light (L128λ). The polarizing beam splitter 31 is one that reflects the S wave of the He-Ne laser beam, allows the P wave to pass through, and totally reflects the Ar laser beam. 87 is a cylindrical lens, and 88 is a four-part detector. The light reflected from the mask plate 12 enters the four-division detector 88, and focus servo is applied by the output of the four-division detector 88. A portion 39 surrounded by dotted lines in the figure can be moved by riding on a moving device such as an air slider. By operating the Ar laser while moving this moving device in the radial direction of the rotating mask plate 12, the spiral guide track and guide address can be recorded in the form of a latent image on the photoresist film IO.

以上の光メモリ素子の基板に対するガイドトラック、ガ
イド番地の溝の形成に際し、該溝の形状は同心円状でも
良く、又ガイド番地の情報は1周に1度に限らず、2周
あるいは8周に1度に設けても良く、更には1周に数度
設けても構わない。
When forming guide tracks and guide address grooves on the substrate of the optical memory element described above, the shape of the grooves may be concentric circles, and the guide address information is not limited to once per round, but once every 2 or 8 rounds. It may be provided once, or even several times per round.

第6図は第1図に示した製法によって得た基板を用いて
構成した光メモリ素子の一部側面断面図を示す。同図に
おいてガラス基板l上に凹凸の溝4(即ちガイドトラッ
ク)が形成され、該ガラス基板l上に該ガラス基板lの
屈折率より大きな屈折率を有する例えばAtN膜、Si
O膜等の誘電体膜40が被覆される。この誘電体膜40
の膜厚は500〜+oooX程度である。上記誘電体膜
40上にGdTbFe 、TbFe 、GdTbFe等
の希土類と遷移金属との合金薄膜41(記録媒体)が被
覆される。
FIG. 6 shows a partial side sectional view of an optical memory element constructed using the substrate obtained by the manufacturing method shown in FIG. In the figure, uneven grooves 4 (i.e., guide tracks) are formed on a glass substrate l, and an AtN film, a Si film, etc. having a refractive index larger than that of the glass substrate l is formed on the glass substrate l.
A dielectric film 40 such as an O film is coated. This dielectric film 40
The film thickness is about 500 to +oooX. The dielectric film 40 is coated with an alloy thin film 41 (recording medium) of a rare earth metal such as GdTbFe, TbFe, GdTbFe, etc. and a transition metal.

この合金薄膜4菫の膜厚は50〜400X程度である。The thickness of the four alloy thin films is about 50 to 400X.

この合金薄膜41の膜厚の下限は垂直磁化膜の作成条件
から決まり、上限は磁気光学効果の増大条件から決まる
。よって上記合金薄膜41の適正膜厚は膜生成方法に依
存する。上記合金薄膜41をスパッタリングによって膜
生成する場合その膜厚が50X程度以下だと垂直磁化膜
を得る事が困難であるのでその膜厚は50X程度より大
であることが必要である。上記合金薄膜41の上にはA
tN、5iOs+等の誘電体膜42.及びCu、At。
The lower limit of the film thickness of this alloy thin film 41 is determined by the conditions for forming the perpendicularly magnetized film, and the upper limit is determined by the conditions for increasing the magneto-optic effect. Therefore, the appropriate thickness of the alloy thin film 41 depends on the film formation method. When the alloy thin film 41 is formed by sputtering, it is difficult to obtain a perpendicular magnetization film if the film thickness is less than about 50X, so the film thickness must be greater than about 50X. On the alloy thin film 41,
Dielectric film 42, such as tN, 5iOs+. and Cu, At.

ステンレス、Ni等の一金属からなる反射膜4aが形成
される。上記誘電体膜42及び反射膜43は磁気光学効
果の特性向上を促すとともに上記合金薄膜41への酸素
及び水分の到達を防止する作用を有する。44は接着層
、45は該接着層44より接着されるガラス、アクリル
等からなる保護板である。この保護板45の代わりにメ
モリ素子の2枚を背中合わせに貼り合わせて両面使用の
メモリ素子にすることも可能である。
A reflective film 4a made of a metal such as stainless steel or Ni is formed. The dielectric film 42 and the reflective film 43 have the function of promoting improvement of the characteristics of the magneto-optic effect and preventing oxygen and moisture from reaching the alloy thin film 41. 44 is an adhesive layer, and 45 is a protective plate made of glass, acrylic, etc. that is adhered by the adhesive layer 44. Instead of this protective plate 45, it is also possible to make a double-sided memory element by bonding two memory elements back to back.

以上の説明の光メモリ素子の例は反射膜構造の光磁気メ
モリ素子について示したが、本発明は第6図に示した合
金薄膜41の膜厚を厚くして反射膜43を除去した構造
を有する単層膜構造の光磁気メモリ素子、あるいはTe
、TeS、TeOx等を記録媒体とする追加記録型の光
メモリ素子においても適用可能である。
Although the example of the optical memory element described above is a magneto-optical memory element having a reflective film structure, the present invention has a structure in which the alloy thin film 41 shown in FIG. 6 is thickened and the reflective film 43 is removed. Magneto-optical memory element with single layer film structure or Te
, TeS, TeOx, etc. as a recording medium can also be applied to an additional recording type optical memory element.

〈効 果〉 本発明によれば光メモリ素子のガイド信号あるいはガイ
ド番地の形成に際して樹脂材を用いなくともよいので酸
素あるいは水分等が記録媒体に達することを防止でき、
その為信頼性の高い光メモリ素子を得ることができるも
のである。又光メモリ素子の基板に形成するガイドパタ
ーンの溝を効率良くしかも精密に形成でき、光メモリ素
子の量産化を大いに高めることができるものである。
<Effects> According to the present invention, it is not necessary to use a resin material when forming the guide signal or guide address of the optical memory element, so that it is possible to prevent oxygen, moisture, etc. from reaching the recording medium.
Therefore, a highly reliable optical memory element can be obtained. Moreover, the grooves of the guide pattern formed on the substrate of the optical memory element can be formed efficiently and precisely, and the mass production of the optical memory element can be greatly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る光メモリ素子の製法の一実施例の
基板の製法を工程順に示す説明図、第2図はマスク板の
製法を示す説明図、第8図はマスク板の外観斜視図、第
4図(、)はマスク板の一部拡大平面図、第4図(b)
はそのa −a ’線での切断断面図、第5図はガイド
トラック及びガイド番地を記録する工程を行なう装置構
成の構成説明図、第6図は光メモリ素子の一部側面断面
図、第7図は従来のメモリ基板の一部斜視図を示す。 図中、 1ニガラス基板 2:フォトレジスト膜8:マスク板 
4:溝 5:マスクブランク 6:ガラス基板
FIG. 1 is an explanatory diagram showing the manufacturing method of a substrate according to an embodiment of the method for manufacturing an optical memory element according to the present invention in the order of steps, FIG. 2 is an explanatory diagram showing the manufacturing method of a mask plate, and FIG. 8 is an external perspective view of the mask plate. , Fig. 4(,) is a partially enlarged plan view of the mask plate, Fig. 4(b)
5 is a cross-sectional view taken along the line a-a', FIG. 5 is an explanatory diagram of the configuration of an apparatus for recording a guide track and a guide address, FIG. 6 is a partial side sectional view of an optical memory element, and FIG. The figure shows a partial perspective view of a conventional memory board. In the figure, 1: glass substrate 2: photoresist film 8: mask plate
4: Groove 5: Mask blank 6: Glass substrate

Claims (1)

【特許請求の範囲】 1、光メモリ素子用のガラス基板上にフォトレジスト膜
を塗布し、 前記ガラス基板よシ充分な可撓性を有する樹脂材上にガ
イドパターン状に欠如された金属膜が被覆されてなるマ
スク板を前記フォトレジスト膜が塗布されたガラス基板
上に重ね、前記マスク板を介して前記フォトレジスト膜
に紫外線を照射し、 前記マスク板のガイドパターンを前記フォトレジスト膜
に転写し、 該フォトレジスト膜を現像した後でエツチングにより前
記ガラス基板にガイドパターンを堀りこんだことを特徴
とする光メモリ素子の製造方法。
[Claims] 1. A photoresist film is coated on a glass substrate for an optical memory element, and a metal film cut out in a guide pattern is coated on a resin material having sufficient flexibility than the glass substrate. A mask plate formed by the above-mentioned mask plate is placed on the glass substrate coated with the photoresist film, and the photoresist film is irradiated with ultraviolet rays through the mask plate to transfer the guide pattern of the mask plate to the photoresist film. . A method for manufacturing an optical memory element, characterized in that a guide pattern is etched into the glass substrate by etching after developing the photoresist film.
JP5384384A 1984-03-16 1984-03-19 Manufacture of optical memory element Granted JPS60197960A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5384384A JPS60197960A (en) 1984-03-19 1984-03-19 Manufacture of optical memory element
EP85102922A EP0155000B1 (en) 1984-03-16 1985-03-14 Method of manufacturing optical memory element
DE8585102922T DE3583754D1 (en) 1984-03-16 1985-03-14 METHOD FOR PRODUCING AN OPTICAL STORAGE ELEMENT.
CA000476648A CA1225467A (en) 1984-03-16 1985-03-15 Method of manufacturing optical memory element
US07/017,456 US4778747A (en) 1984-03-16 1987-02-24 Method of manufacturing optical memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5384384A JPS60197960A (en) 1984-03-19 1984-03-19 Manufacture of optical memory element

Publications (2)

Publication Number Publication Date
JPS60197960A true JPS60197960A (en) 1985-10-07
JPH0585972B2 JPH0585972B2 (en) 1993-12-09

Family

ID=12954056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5384384A Granted JPS60197960A (en) 1984-03-16 1984-03-19 Manufacture of optical memory element

Country Status (1)

Country Link
JP (1) JPS60197960A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128922A (en) * 1987-09-29 1992-07-07 Sharp Kabushiki Kaisha Optical disk with glass substrate and method of producing same
CN104668894A (en) * 2013-12-03 2015-06-03 宁波江丰电子材料股份有限公司 Method for manufacturing suspension mask plate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529353A (en) * 1975-07-11 1977-01-24 Matsushita Electric Ind Co Ltd Solid-state oscillator
JPS5477105A (en) * 1977-12-01 1979-06-20 Pioneer Electronic Corp Method of producing optical signal recording carrier
JPS5532250A (en) * 1978-08-25 1980-03-06 Matsushita Electric Ind Co Ltd Duplicating method for fine pattern
JPS57189893A (en) * 1981-05-20 1982-11-22 Fuji Photo Film Co Ltd Duplication of optical information

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529353A (en) * 1975-07-11 1977-01-24 Matsushita Electric Ind Co Ltd Solid-state oscillator
JPS5477105A (en) * 1977-12-01 1979-06-20 Pioneer Electronic Corp Method of producing optical signal recording carrier
JPS5532250A (en) * 1978-08-25 1980-03-06 Matsushita Electric Ind Co Ltd Duplicating method for fine pattern
JPS57189893A (en) * 1981-05-20 1982-11-22 Fuji Photo Film Co Ltd Duplication of optical information

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128922A (en) * 1987-09-29 1992-07-07 Sharp Kabushiki Kaisha Optical disk with glass substrate and method of producing same
CN104668894A (en) * 2013-12-03 2015-06-03 宁波江丰电子材料股份有限公司 Method for manufacturing suspension mask plate

Also Published As

Publication number Publication date
JPH0585972B2 (en) 1993-12-09

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