JPS60197364A - Polishing apparatus - Google Patents

Polishing apparatus

Info

Publication number
JPS60197364A
JPS60197364A JP59050243A JP5024384A JPS60197364A JP S60197364 A JPS60197364 A JP S60197364A JP 59050243 A JP59050243 A JP 59050243A JP 5024384 A JP5024384 A JP 5024384A JP S60197364 A JPS60197364 A JP S60197364A
Authority
JP
Japan
Prior art keywords
surface plate
carrier
polished article
polishing
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59050243A
Other languages
Japanese (ja)
Inventor
Haruo Kobayashi
春夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59050243A priority Critical patent/JPS60197364A/en
Publication of JPS60197364A publication Critical patent/JPS60197364A/en
Pending legal-status Critical Current

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Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To improve the machining precision of one-side surface by revolving a carrier holding a polished article at a prescribed speed by a guide gear set on the outer periphery and moving either of the upper and lower surface plates in reciprocation in the lateral direction, thus providing a uniform surface pressure onto the polished article having a large diameter. CONSTITUTION:A polished article 2 is fitted into each accommodation hole on a carrier 3 and loaded onto a lower surface plate 1, and an upper surface plate 5 is arranged so that the undersurface contacts with the uppersurface of the polished article 2. A guide gear 4 is driven, pouring abrasive agent onto the both surfaces of the polished article 2, and the carrier 3 is revolved at a prescribed speed in a certain direction, and the lower surface plate 1 is horizontally moved in reciprocation in the lateral direction by a driving mechanism. Therefore, the polished article 2 is revolved between the upper surface plate 1 which moves in reciprocation in the lateral direction and the fixed upper surface plate 5, and uniform polishing for the upper surface is permitted because of the sliding in a circular orbit having a certain angular speed, and the polishing with particularly high precision for the undersurface is permitted because of the sliding in a circular orbit having a certain angular speed and the reciprocative sliding in the lateral direction.

Description

【発明の詳細な説明】 この発明は、半導体ウェハー等の薄板の特にその片面を
高精度に研磨する研磨装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polishing apparatus for polishing particularly one side of a thin plate such as a semiconductor wafer with high precision.

従来より、半導体ウェハーのラッピング、ポリとして、
第1図に示すようなものが知られている。
Traditionally, semiconductor wafer wrapping and poly
The one shown in FIG. 1 is known.

第1図(A)はブロック11に装着されたウェハー12
・・・を示し、このウェハー12・・・を装着したブロ
ック11は、同図(B)の定盤13上に張−j)付けら
れている研磨布14上に載置される。定盤13は図示さ
れていない駆動装置に連結されていて1.上下の軸線O
を中心として回転されるようになっている。そして、ブ
四ツク11上にホルダー15をかぶせてそのブロック1
1を保持する。
FIG. 1(A) shows a wafer 12 mounted on a block 11.
The block 11 with the wafers 12 mounted thereon is placed on the polishing cloth 14 which is stretched over the surface plate 13 shown in FIG. The surface plate 13 is connected to a drive device (not shown).1. Upper and lower axis O
It is designed to be rotated around . Then, cover the block 11 with the holder 15 and
Hold 1.

ホルダー15は、自在継手によって図示されていない昇
降装置に連結されてhて、上昇、下降が可能でかつ回転
が自在となっている。
The holder 15 is connected to an elevating device (not shown) by a universal joint, so that it can be raised and lowered and rotated freely.

研磨を行なうに当っては、定盤13上に研磨液を滴下し
つつ、図示されていない駆動装置により定盤13を図中
矢印方向に回転させる。これにより、ホルダー15は自
ら図中矢印方向に回転させられ、ウェハー12・・・の
下面が研磨布14の上面に擦られ研磨液を介してポリッ
シングされる。
When polishing is performed, the polishing liquid is dropped onto the surface plate 13 while the surface plate 13 is rotated in the direction of the arrow in the figure by a drive device (not shown). As a result, the holder 15 is rotated by itself in the direction of the arrow in the figure, and the lower surface of the wafer 12 is rubbed against the upper surface of the polishing cloth 14 and polished using the polishing liquid.

ところが、このよ?な研磨装置では、クエハー描いて研
磨されるため、均一な研磨ができず高い平坦度が得にく
いとhつた問題があった。
However, this? With conventional polishing equipment, since polishing is performed in a quadrature pattern, uniform polishing cannot be achieved and it is difficult to obtain high flatness.

また、このような装置におけるウェハー12・・・の着
脱作業は、ウェハー12・・・のブロック11への張り
付け、はく離の作業が必要で、相当な時間を要して非能
率的であり、その作業の自動化もブロック11の大きさ
、重量等の制約のtめに普及していなり0 さらに、ウェハー12・・・の大口径化に伴なって、ブ
ロック11に装着し得る数が少なくなることによる能率
の低下を補うために、装置の大型化を図ると定盤3の水
平回転が得にくくなって加工精度が悪化すると込う問題
もあつto この発明は、上記事情に鑑みてなされたものであり、被
研磨物に均一な面圧を与えて高精度な研磨を行なうこと
ができ、被研磨物の大口径化にも容易に対応することが
できる研磨装置を提供することを目的とする。
In addition, the work of attaching and detaching the wafers 12 in such an apparatus requires the work of attaching and peeling the wafers 12 to the block 11, which takes a considerable amount of time and is inefficient. Automation of work is becoming more widespread due to restrictions such as the size and weight of the block 11. Furthermore, as the diameter of the wafers 12 becomes larger, the number that can be attached to the block 11 decreases. In order to compensate for the decrease in efficiency caused by this, if the device is made larger, it becomes difficult to obtain horizontal rotation of the surface plate 3, which leads to a deterioration in machining accuracy.This invention was made in view of the above-mentioned circumstances. The purpose of the present invention is to provide a polishing device that can perform high-precision polishing by applying a uniform surface pressure to the object to be polished, and can easily cope with increasing the diameter of the object to be polished. .

以下、この発明を図示する実施例に基づ−て説明する。The present invention will be explained below based on illustrated embodiments.

第2図(A)% (B)にお−で、平板状の下定盤1は
水平の左右方向に移動自在とされ、そして図示しない駆
動機構によって左右に往復動されるようになっている。
As shown in FIGS. 2(A) and 2(B), the flat lower surface plate 1 is movable horizontally in left and right directions, and is reciprocated left and right by a drive mechanism (not shown).

この下定盤!上面には、被研磨物(ウェハー)2・・・
がキャリア3のそれぞれの収容孔に装填されて載置され
ている。このキャリア3は円板状で、その外周に歯が形
成されてなるものである。このキャリア3の外周ICは
複数個のガイドギア4・・・が周設され、上記キャリア
3と哨合されるとともに、図示されなhwA動装置に連
結されて、このキャリア3を回転させるように保持して
いる。そして、上記下定盤l上に載置された被研磨物2
・・・上面には、この下定盤1と同形の上定盤5が固定
的に備えられて込る。
This lower surface plate! On the upper surface, the object to be polished (wafer) 2...
are loaded and placed in each accommodation hole of the carrier 3. This carrier 3 is disc-shaped and has teeth formed on its outer periphery. A plurality of guide gears 4 are disposed around the outer periphery of the carrier 3, and are connected to the carrier 3 and connected to an hwA motion device (not shown) to rotate the carrier 3. keeping. The object to be polished 2 is placed on the lower surface plate L.
...An upper surface plate 5 having the same shape as the lower surface plate 1 is fixedly provided on the upper surface.

以上のように構成された研磨装置では、先ず被研磨物2
・・・をキャリア3のそれぞれの収容孔に装填して下定
盤1上に載置する。次に、上定盤5をその下面が潰研磨
物2・・・の上面に当接するようにして設置4する。そ
して、被研磨物2・・・の両面に研磨剤を注入しながら
ガイドギア4・・・t−駆動し、キャリア3を一定方向
に所定速度で回転させる。そしてさらに、図示されない
駆動機構によ)下定盤1を左右に水平往復動させる。し
たがって、被研磨物2・・・は、左右に往復動する下定
盤1と、固定されている上定盤5との間にて回転するこ
とになり、その上面に対しては一定の角速度をもった円
軌道を描く摺動による均一な研磨がなされ、その下面に
対しては、一定の角速度をもった円軌道を描く摺動と左
右の往復摺動とによる特に高精度な研磨がなされる。こ
のように、被研磨物2・・・に対して、平坦度や平行度
等の加工精度が極めて優れた研磨がなされる。
In the polishing apparatus configured as described above, first, the object to be polished 2
... are loaded into each accommodation hole of the carrier 3 and placed on the lower surface plate 1. Next, the upper surface plate 5 is installed 4 so that its lower surface is in contact with the upper surface of the crushed object 2 . Then, while injecting abrasive into both surfaces of the object to be polished 2, the guide gear 4 is driven to rotate the carrier 3 in a constant direction at a predetermined speed. Furthermore, the lower surface plate 1 is horizontally reciprocated from side to side by a drive mechanism (not shown). Therefore, the object to be polished 2... rotates between the lower surface plate 1, which reciprocates from side to side, and the upper surface plate 5, which is fixed, and has a constant angular velocity with respect to its upper surface. Uniform polishing is achieved by sliding in a circular orbit with a constant angular velocity, and particularly high-precision polishing is performed on the lower surface by sliding in a circular orbit with a constant angular velocity and reciprocating sliding from side to side. . In this way, the object to be polished 2 is polished with extremely high processing accuracy such as flatness and parallelism.

ところで、下定盤lを左右に往復動させる駆動機構とし
ては種々の構成のものを利用でき、例えば下定盤1の側
部に水平方向に延在するランクを取付け、そしてこのラ
ックに噛合するギアを正転、逆転駆動させるような構成
とすることができる。
By the way, various configurations can be used as the drive mechanism for reciprocating the lower surface plate 1 from side to side. For example, a rank extending horizontally is attached to the side of the lower surface plate 1, and a gear meshing with this rack is installed. It can be configured to drive in forward or reverse rotation.

また、下定盤10代りに上定盤5を左右に往復動させる
ように成してもよい。
Further, instead of the lower surface plate 10, the upper surface plate 5 may be configured to reciprocate from side to side.

による被研磨物の研磨のみに言及しているが、これに限
らず、本発明の研磨装置にあっては、被研磨物の保持構
造を変えることで容易にこれを、垂直回動ま九は傾斜直
動で研磨することができるものである。
However, the polishing apparatus of the present invention is not limited to this, and by changing the holding structure of the object to be polished, it is possible to easily perform vertical rotation and polishing. It can be polished using tilted linear motion.

以上説明したように、本発明の研磨装置は被研磨物を装
填して保持するキャリアを、その外周部に周設されたガ
イドギアで常に一定方向に所定速度で回転させながら、
被研磨物の上・下面に当接した上・下定盤の内の一方が
左右への往復運動を繰り返すようにし7t7tめ、被研
磨物は常に一定の角速度を持った円軌道を描きながら、
それらの両面が常に均一な面圧を受けた状態で均等な摺
動を受けるため、特にその片方の面に対して、平坦度お
よび平行度等の加工精度が極めて良好な研磨が行なえる
ものである。
As explained above, the polishing apparatus of the present invention rotates the carrier that holds the object to be polished in a constant direction at a predetermined speed using a guide gear provided around the outer circumference of the carrier.
One of the upper and lower surface plates in contact with the upper and lower surfaces of the object to be polished is made to repeatedly move back and forth to the left and right, and the object to be polished is always drawn in a circular orbit with a constant angular velocity.
Since both surfaces are always subjected to uniform sliding motion under uniform surface pressure, it is possible to polish one surface in particular with extremely good processing accuracy such as flatness and parallelism. be.

tt1被加工物が大型化しても、キャリアが1秋な丸め
、バランスが崩れ暮こともなく、上述と同様に加工精度
に優れた研磨が行なわれると共に、さらに構造が極めて
簡単であることから将来の自動化に対しても容易に適応
され得るものである。
Even if the tt1 workpiece becomes larger, the carrier will not be rounded up or lose its balance, and as mentioned above, polishing will be performed with excellent processing accuracy, and the structure is extremely simple, so it will be useful in the future. It can also be easily adapted to automation.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の研磨装置の一例を示すもので、(A)は
吟エバーを装着したブロックの平面図、(B)は異品の
概略側面図、第2図は本発明の研磨装置の実施例を示す
もので、(A)はその概略平面図、(B)はその概略正
面図である◎1・・・・・・下定盤、2・・・・・・被
研磨物、3・・・・・・キャリア、4・・・・・・ガイ
ドギア、5・・・・・・上定盤。 第1図 (A) 2 (B)
Fig. 1 shows an example of a conventional polishing device, (A) is a plan view of a block equipped with a Ginever, (B) is a schematic side view of a different item, and Fig. 2 is a diagram of the polishing device of the present invention. An example is shown in which (A) is a schematic plan view thereof, and (B) is a schematic front view thereof. ...Carrier, 4...Guide gear, 5...Upper surface plate. Figure 1 (A) 2 (B)

Claims (1)

【特許請求の範囲】[Claims] 1個以上の被研磨物を保持しかつ外周に歯が形成された
円板状のキャリアと、上記キャリアの外周の歯と噛合し
て上記キャリアを上下の軸線を中心として所定位置で回
転させる2個以上のガイドギアと、上記キャリアに保持
された被研磨物を上下から挾むように配され九上定盤お
よび下定盤と、これら上定盤および下定盤のいずれか一
方を左右に往復動させる駆動機構とを具備してなること
を特徴とする研磨装置。
A disc-shaped carrier that holds one or more objects to be polished and has teeth formed on its outer periphery, and rotates the carrier at a predetermined position about an upper and lower axis by meshing with the teeth on the outer periphery of the carrier. more than one guide gear, an upper surface plate and a lower surface plate arranged to sandwich the workpiece held in the carrier from above and below, and a drive that reciprocates either the upper surface plate or the lower surface plate to the left or right. A polishing device characterized by comprising a mechanism.
JP59050243A 1984-03-16 1984-03-16 Polishing apparatus Pending JPS60197364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59050243A JPS60197364A (en) 1984-03-16 1984-03-16 Polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59050243A JPS60197364A (en) 1984-03-16 1984-03-16 Polishing apparatus

Publications (1)

Publication Number Publication Date
JPS60197364A true JPS60197364A (en) 1985-10-05

Family

ID=12853550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59050243A Pending JPS60197364A (en) 1984-03-16 1984-03-16 Polishing apparatus

Country Status (1)

Country Link
JP (1) JPS60197364A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0788760A (en) * 1993-09-21 1995-04-04 Sumitomo Sitix Corp Mirror surface polishing device for semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0788760A (en) * 1993-09-21 1995-04-04 Sumitomo Sitix Corp Mirror surface polishing device for semiconductor substrate

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