JPS60195091A - Production of diamond thin film - Google Patents

Production of diamond thin film

Info

Publication number
JPS60195091A
JPS60195091A JP59049768A JP4976884A JPS60195091A JP S60195091 A JPS60195091 A JP S60195091A JP 59049768 A JP59049768 A JP 59049768A JP 4976884 A JP4976884 A JP 4976884A JP S60195091 A JPS60195091 A JP S60195091A
Authority
JP
Japan
Prior art keywords
substrate
diamond
hydrocarbon
thin film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59049768A
Other languages
Japanese (ja)
Inventor
Kazuo Wakana
若菜　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Namiki Precision Jewel Co Ltd
Original Assignee
Namiki Precision Jewel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namiki Precision Jewel Co Ltd filed Critical Namiki Precision Jewel Co Ltd
Priority to JP59049768A priority Critical patent/JPS60195091A/en
Publication of JPS60195091A publication Critical patent/JPS60195091A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Abstract

PURPOSE:To form a thin diamond film having excellent adhesivity to the substrate and high abrasion resistance and hardness, by using a diamond free from crystal defect as the substrate, and introducing a hydrocarbon into a plasma to effect the thermal decomposition of the hydrocarbon. CONSTITUTION:A diamond free from crystal defect (the shadow of the strain caused by the crystal defects such as lattice defects cannot be discerned by naked eyes through a polarizer such as a polaroid film or nicol prism) is used as a substrate. A mixture of hydrocarbon and hydrogen gas is introduced into a plasma to effect the thermal decomposition of the hydrocarbon and the epitaxial growth of a thin diamond film on the substrate. A thin diamond film having high abrasion resistance and hardness, excellent adhesivity to the substrate, and absolutely free of cracks and peeling can be produced by this process.

Description

【発明の詳細な説明】 本発明は低圧気相中での炭化水素の熱分解によるダイヤ
モンド基板上へダイヤモンド簿膜を形成するだめの基板
に閉覆るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for forming a diamond film on a diamond substrate by thermal decomposition of hydrocarbons in a low pressure gas phase.

ダイヤモンドは最高の硬度を有する物質であるが、耐摩
耗性のほかに電気的絶縁性、熱的伝導性、音波伝播性、
透光性に優れ膜状に形成した場合幅広い用途が考えられ
る。近年その製造方法として注目を集めている炭化水素
の熱分解によるダイヤモンド薄膜の製造方法としては、
高温熱分解法、イオンビーム法、直流グロー放電法、高
周波放電プラズマ法、イオン化然着法等が提案されてお
り、ダイヤモンドの形成が確認されている。これらの方
法において、蒸着基板としてはダイヤモンド、ガラス、
　Ｎｏ、　Ｗ、　Ｔａなどの金属が使用されている。し
かしながらその製造工程において、ダイヤモンドの形成
を阻害する黒鉛や非ダイヤモンド炭素が基板表面に析出
する欠点が多く、いかにしてこれらを除去し、析出速度
を高めるかが問題点であった。また形成膜にクラックが
発生したり、さらには基板との剥離が生ずるという欠点
があった。そして形成した薄膜状ダイヤモンドの結晶構
造は欠陥の少ないことが望ましい。Diamond is the material with the highest hardness, but in addition to its wear resistance, it also has electrical insulation, thermal conductivity, sound propagation properties,
It has excellent translucency and can be used in a wide range of applications when formed into a film. A method for producing diamond thin films by thermal decomposition of hydrocarbons, which has been attracting attention in recent years, is as follows:
High-temperature pyrolysis methods, ion beam methods, direct current glow discharge methods, high-frequency discharge plasma methods, ionization natural deposition methods, etc. have been proposed, and diamond formation has been confirmed. In these methods, diamond, glass,
Metals such as No, W, and Ta are used. However, in the manufacturing process, there are many drawbacks in that graphite and non-diamond carbon, which inhibit diamond formation, are deposited on the substrate surface, and the problem has been how to remove these and increase the deposition rate. Further, there are drawbacks in that cracks occur in the formed film and furthermore, separation from the substrate occurs. It is desirable that the crystal structure of the formed thin film diamond has few defects.

本発明はこの点を考慮して、２１板となるダイヤモンド
を限定することにより、結晶欠陥の少ないダイヤモンド
薄膜を得、前記欠点を解決Ｊ゛ることを目的とする。In consideration of this point, the present invention aims to solve the above-mentioned drawbacks by limiting the number of diamond plates to 21 to obtain a diamond thin film with few crystal defects.

次に本発明を説明する。本発明の製造方法は、混合ガス
として炭化水素と水素ガスを使用し、マイクロ波放電中
を通過させた混合ガスを加熱したダイヤモンド基板表面
に尋人し、炭化水素の熱分解によりダイヤモンドを析出
させる工程からなる。ダイヤモンド薄膜を得る方法とし
ては、化学気相蒸着によりダイヤモンド種結晶上にエピ
タキシシル成長させることは公知であるが、基板として
使用するダイヤモンドに転位等の格子欠陥が少ない場合
、形成したダイヤモンド薄膜は耐摩七性及び高硬度であ
り、さらに基板との密着性に優れ、形成膜のクラックの
発生および剥離が皆無になることが判明したのである。Next, the present invention will be explained. The manufacturing method of the present invention uses hydrocarbon and hydrogen gas as a mixed gas, and the mixed gas is passed through a microwave discharge and applied to the surface of a heated diamond substrate, and diamond is deposited by thermal decomposition of the hydrocarbon. Consists of processes. A well-known method for obtaining a diamond thin film is epitaxial growth on a diamond seed crystal by chemical vapor deposition, but if the diamond used as a substrate has few lattice defects such as dislocations, the formed diamond thin film will have poor wear resistance. It has been found that the film has high hardness and high hardness, and has excellent adhesion to the substrate, with no cracking or peeling of the formed film.

格子欠陥などの結晶欠陥に起因した歪を検出する手段と
しては、少なくともポラロイド板あるいはニコルプリ女
ム等の偏光子により肉眼で観察し、隙影を確認出来ない
程度の無結晶欠陥なるダイヤモンドを選択することが実
用上効果的であり、このにうなダイヤモンドを基板に使
用することによって、エピタキシャル成長して形成した
ダイヤモンド薄膜も結晶欠陥が少なく、耐摩耗性及び高
硬度性さらには基板との密着性が優れているという効果
があった。As a means of detecting distortion caused by crystal defects such as lattice defects, at least observe with the naked eye using a polarizer such as a Polaroid plate or NicolPrim, and select a diamond with amorphous defects where no gaps can be seen. By using this kind of diamond as a substrate, the epitaxially grown diamond thin film has few crystal defects, has high wear resistance and hardness, and has excellent adhesion to the substrate. It had the effect of

以上のことから、本発明により得られたダイヤモンド上
合成薄膜ダイヤモンド素子は、耐摩耗性を要求される切
削工具類の表面処理１発熱素子の放熱用ヒートシンク、
音響用スピーカー振動板・カンチレバー等高弾性率材料
の表面処理、透光性レンズ・窓材、半導体など機能性ダ
イヤモンド薄膜として応用出来る。From the above, the synthetic thin film diamond element on diamond obtained by the present invention can be used as a heat sink for surface treatment of cutting tools that require wear resistance.
It can be applied as a functional diamond thin film for surface treatment of high elasticity materials such as acoustic speaker diaphragms and cantilevers, translucent lenses and window materials, and semiconductors.

特許出願人　並木精密宝石株式会社Patent applicant: Namiki Precision Jewel Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 炭化水素をプラズマ中に導入してその熱分解によりダイ
ヤモンド基板上にダイヤモンド薄膜を形成する方法にお
いて、該基板として少なくとも偏光子で検出出来ない程
度の無結晶欠陥なるダイヤモンドを使用したことを特徴
とＪるダイヤモンド薄膜の製造方法。A method of forming a diamond thin film on a diamond substrate by introducing hydrocarbons into plasma and thermally decomposing the same, characterized in that diamond with amorphous defects that are at least undetectable with a polarizer is used as the substrate. A method for manufacturing a diamond thin film.
JP59049768A 1984-03-15 1984-03-15 Production of diamond thin film Pending JPS60195091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59049768A JPS60195091A (en) 1984-03-15 1984-03-15 Production of diamond thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59049768A JPS60195091A (en) 1984-03-15 1984-03-15 Production of diamond thin film

Publications (1)

Publication Number Publication Date
JPS60195091A true JPS60195091A (en) 1985-10-03

Family

ID=12840346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59049768A Pending JPS60195091A (en) 1984-03-15 1984-03-15 Production of diamond thin film

Country Status (1)

Country Link
JP (1) JPS60195091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387310A (en) * 1989-03-07 1995-02-07 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387310A (en) * 1989-03-07 1995-02-07 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film

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