JPS60191509A - Low noise amplifier circuit device - Google Patents
Low noise amplifier circuit deviceInfo
- Publication number
- JPS60191509A JPS60191509A JP4748784A JP4748784A JPS60191509A JP S60191509 A JPS60191509 A JP S60191509A JP 4748784 A JP4748784 A JP 4748784A JP 4748784 A JP4748784 A JP 4748784A JP S60191509 A JPS60191509 A JP S60191509A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- circuit substrate
- circuit
- film
- noise amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は低雑音増幅回路装置に係り、特にその回路基板
に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a low-noise amplifier circuit device, and particularly to a circuit board thereof.
（ｂｌ 従来技術と問題点
一般に、増幅回路は雑音が少ないことが大切である。例
えば、４ ＧＨ２帯の信号をアンテナより導波管を通し
て受信した初段部分のマイクロ波低雑音増幅回路におい
ては特別に雑音指数が小さいことが要求されている。し
かし、薄膜回路基板によって回路損失が増加し、雑音指
数が大きくなると云う問題がある。(bl) Prior Art and Problems In general, it is important for amplifier circuits to have low noise. For example, in a microwave low-noise amplifier circuit in the first stage that receives a 4 GH2 band signal from an antenna through a waveguide, A low noise figure is required.However, there is a problem in that thin film circuit boards increase circuit loss and increase the noise figure.
第１図はこのような従来のマイクロ波低雑音増幅回路を
設けた回路基板の平面図を示しており、■はＧａＡｓ
Ｆ Ｅ Ｔ （ガリウム砒素電界効果トランジスタ）、
２は入力側回路基板、３は出力側回路基板、４はこれら
を取付けた金属材よりなるキャリアで、入力側回路は主
として低雑音を目的としたインピーダンス整合回路、出
力側回路は主として利得を目的としたインピーダンス整
合回路が含まれている。この両側の回路基板２，３内に
図示しているが、５は導電膜パターン、６は抵抗体膜パ
ターン、７はボンディングされた金ワイヤーである。ま
た、入力側回路基板２の中に示している記号りは分布定
数回路部分、記号Ｂはバイアス抵抗回路部分である。Figure 1 shows a plan view of a circuit board equipped with such a conventional microwave low-noise amplifier circuit, and ■ is made of GaAs.
FET (Gallium Arsenide Field Effect Transistor),
2 is an input side circuit board, 3 is an output side circuit board, and 4 is a carrier made of metal material to which these are attached.The input side circuit is an impedance matching circuit mainly aimed at low noise, and the output side circuit is mainly used for gain. It includes an impedance matching circuit. As shown in the circuit boards 2 and 3 on both sides, 5 is a conductive film pattern, 6 is a resistor film pattern, and 7 is a bonded gold wire. Further, the symbol ① shown in the input side circuit board 2 is a distributed constant circuit portion, and the symbol B is a bias resistance circuit portion.
一方、第２図は回路基板の導電膜パターン５が設けられ
た部分の拡大断面図であり、１０はアルミナ、１１は窒
化タンタル（ＴａＮ）膜、１２はニクロム膜、１３は金
（Ａｕ）膜であって、抵抗体膜パターン６は金１！１ｊ
ｌ１３とニクロム膜１２とを除去して作成される。この
ように構成した回路基板を一般に薄膜回路基板と称して
いるが、通常、これらの被膜は蒸着法で被着して形成さ
れる。On the other hand, FIG. 2 is an enlarged sectional view of a portion of the circuit board where the conductive film pattern 5 is provided, in which 10 is alumina, 11 is tantalum nitride (TaN) film, 12 is nichrome film, and 13 is gold (Au) film. The resistor film pattern 6 is made of gold 1!1j
It is created by removing l13 and the nichrome film 12. A circuit board constructed in this manner is generally referred to as a thin film circuit board, and these films are usually formed by depositing them by vapor deposition.
ところで、この薄膜回路基板における周波数とＱ、特性
との関係（周波数に整合するＱ値）は、第３図の図表に
示す曲線Ｉで表わされる。回路基板は反射が少な（損失
が少なくてＱ値が高（なるほど、雑音指数が小さくなる
から、入力側回路基板２にはＱ。特性の高い回路基板が
望ましいことは云うまでもない。Incidentally, the relationship between frequency, Q, and characteristics (Q value matching frequency) in this thin film circuit board is expressed by curve I shown in the diagram of FIG. It goes without saying that it is desirable for the input side circuit board 2 to have a circuit board with low reflection (less loss) and a high Q value (I see, the noise figure is small), so it is desirable for the input side circuit board 2 to have a high Q value.
（Ｃ１発明の目的
本発明は、このような雑音指数を小さくするための、Ｇ
Ｈｚ帯におけるＱ、特性の一層高い回路基板を有する低
雑音増幅回路装置を提案するものである。(C1 Purpose of the Invention The present invention provides a G
The present invention proposes a low-noise amplifier circuit device having a circuit board with higher Q characteristics in the Hz band.
（ｄ） 発明の構成
その目的は、増幅用半導体素子と入力側回路基板と出力
側回路基板とを具備し、該入力側回路基板には少なくと
も入力側バイアス抵抗を除く入力回路パターンが鍍金に
よる導体金属膜で形成され、該出力側回路基板には前記
入力側バイアス抵抗と出力回路パターンとが形成された
薄膜回路基板からなる低雑音増幅回路装置によって達成
される。(d) Structure of the Invention The object of the invention is to include an amplifying semiconductor element, an input side circuit board, and an output side circuit board, and the input circuit board has at least an input circuit pattern other than an input side bias resistor made of a plated conductor. This is achieved by a low-noise amplifier circuit device comprising a thin film circuit board made of a metal film, on which the input side bias resistor and the output circuit pattern are formed.
（ｅ） 発明の実施例
以下２図面を参照して詳細に説明する。第４図は本発明
にがかる一実施例のマイクロ波低雑音増幅回路を設けた
回路基板の平面図を示しており、２２は入力側回路基板
、２３は出力側回路基板、２５は入力側回路基板の導電
膜パターンで、その他は第１図と同じ部材に同一記号を
符しである。ここに、出力側回路基板２３は利得マツチ
ング用であるから、第１図と同様に第２図に示す断面図
の薄膜回路基板を用い、入力側回路基板２２には低雑音
マツチング層として新たな構造の回路基板を使用するも
のである。(e) Embodiments of the invention A detailed description will be given below with reference to two drawings. FIG. 4 shows a plan view of a circuit board provided with a microwave low noise amplifier circuit according to an embodiment of the present invention, in which 22 is an input side circuit board, 23 is an output side circuit board, and 25 is an input side circuit. Other than the conductive film pattern on the substrate, the same members as in FIG. 1 are designated by the same symbols. Here, since the output side circuit board 23 is for gain matching, a thin film circuit board with the cross-sectional view shown in FIG. 2 is used as in FIG. It uses a structured circuit board.
即ち、入力側回路基板２２の導電膜パターン２５部分の
拡大断面図を第５図に示しているが、アルミナ３０の基
板に銅膜３１と金膜３２とを被着した構造とする。作成
法は、約０．６ ｍのアルミナ３０の上に無電解鍍金し
て銅膜３１を被着し、その上に電解鍍金して膜厚数μｍ
程度の金（Ａｕ）膜３２を被着する。That is, an enlarged sectional view of the conductive film pattern 25 portion of the input side circuit board 22 is shown in FIG. 5, and the structure is such that a copper film 31 and a gold film 32 are coated on an alumina 30 substrate. The manufacturing method is to deposit a copper film 31 on approximately 0.6 m of alumina 30 by electroless plating, and then electrolytically plate the copper film 31 on top of it to a thickness of several μm.
A gold (Au) film 32 of about 100 mL is deposited.
銅膜３１は金Ｂ’Ａ３２を被着させるための媒体膜で、
前記第２図に示す薄膜回路基板のニクロム膜１２と同様
の役目をする膜である。The copper film 31 is a medium film for depositing gold B'A32,
This film plays the same role as the nichrome film 12 of the thin film circuit board shown in FIG. 2 above.
他方、このような構造の入力側回路基板２２を使用する
と、抵抗体膜パターンを形成することができなくなる。On the other hand, if the input side circuit board 22 having such a structure is used, it becomes impossible to form a resistor film pattern.
換言すれば、第１図に示すバイアス抵抗回路Ｂを形成す
ることができなくなるから、バイアス抵抗回路Ｂは第４
図に示しているように出力側回路基板２３側に設ける。In other words, since it becomes impossible to form the bias resistance circuit B shown in FIG.
As shown in the figure, it is provided on the output side circuit board 23 side.
バイアス抵抗回路Ｂは低雑音マツチングに関係しないか
ら、むしろこのような方式が好ましいことでもある。Since the bias resistor circuit B is not related to low-noise matching, this type of system is preferable.
第３図の図表に示す曲線■は、本発明にかかる回路基板
２２のＱＯ特性を表わしている。このように、従来の薄
膜回路基板２に比べてＱ。特性が大きく改善され、その
ために雑音指数を小さくすることが可能になる。従って
、第４図のように構成すると、一層良い低雑音増幅回路
が得られる。Curve 2 shown in the diagram of FIG. 3 represents the QO characteristic of the circuit board 22 according to the present invention. In this way, Q compared to the conventional thin film circuit board 2. The characteristics are greatly improved, which makes it possible to reduce the noise figure. Therefore, if the configuration is as shown in FIG. 4, an even better low-noise amplifier circuit can be obtained.
尚、第６図は第４図に図示した低雑音増幅回路装置の等
価回路図で、矩形は導電膜パターンからなるインピダン
スを示している。Incidentally, FIG. 6 is an equivalent circuit diagram of the low-noise amplification circuit device shown in FIG. 4, and the rectangle indicates the impedance formed by the conductive film pattern.
ｆｆ） 発明の効果
以上の実施例の説明から判るように、本発明によれば更
に低いノイズ（雑音）をもった増幅回路となり、ＧＨ２
帯増帯層幅器性能化に顕著に役立つことは明らかである
。ff) Effects of the Invention As can be seen from the description of the embodiments above, according to the present invention, an amplifier circuit with even lower noise can be obtained, and GH2
It is clear that this method is significantly useful for improving the performance of band width and band width devices.
第１図は従来のマイクロ波増幅回路の回路基板平面図、
第２図はその導電膜部分の拡大断面図、第３図は回路基
板における周波数とＱＯ特性との関係図表、第４図は本
発明にかかるマイクロ波増幅回路の回路基板平面図、第
５図はその導電膜部分の拡大断面図、第６図はその等価
回路図である。
図中、ｌはＧａＡｓＦＥＴ、２．２２ば入力側回路基板
、３．’２．３は出力側回路基板、４はキャリア、５゜
２５は導電膜パターン、６は抵抗体膜パターン、７はボ
ンディングワイヤー、１０はアルミナ、１１は窒化タン
タル膜、１２はニクロム膜、 １３．３２は金膜。
３１は銅膜で、Ｌは分布定数回路部分、Ｂはバイアス抵
抗回路部分を示している。
第１図
第２１！ｆｆ
第３図
用液牡（Ｇ）ｉＺ）
第４図
第５図Figure 1 is a circuit board plan view of a conventional microwave amplifier circuit.
Fig. 2 is an enlarged sectional view of the conductive film portion, Fig. 3 is a diagram of the relationship between frequency and QO characteristics in the circuit board, Fig. 4 is a plan view of the circuit board of the microwave amplifier circuit according to the present invention, and Fig. 5 is an enlarged sectional view of the conductive film portion, and FIG. 6 is an equivalent circuit diagram thereof. In the figure, l is a GaAsFET, 2.22 is an input side circuit board, and 3. '2.3 is an output side circuit board, 4 is a carrier, 5°25 is a conductive film pattern, 6 is a resistor film pattern, 7 is a bonding wire, 10 is alumina, 11 is a tantalum nitride film, 12 is a nichrome film, 13 .32 is gold film. 31 is a copper film, L indicates a distributed constant circuit portion, and B indicates a bias resistor circuit portion. Figure 1 21! ff Figure 3 (G) iZ) Figure 4 Figure 5
Claims (1)
を具備し、該入力側回路基板には少なくとも入力側バイ
アス抵抗を除（入力回路パターンが鍍金による導体金属
膜で形成され、該出力側回路基板には前記入力側バイア
ス抵抗と出力回路パターンとが形成された薄膜回路基板
からなることを特徴とする低雑音増幅回路装置。It is equipped with an amplification semiconductor element, an input side circuit board, and an output side circuit board, and the input side circuit board has at least an input side bias resistor (the input circuit pattern is formed of a conductive metal film by plating, and the output side 1. A low-noise amplifier circuit device comprising a thin film circuit board on which the input side bias resistor and the output circuit pattern are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4748784A JPS60191509A (en) | 1984-03-12 | 1984-03-12 | Low noise amplifier circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4748784A JPS60191509A (en) | 1984-03-12 | 1984-03-12 | Low noise amplifier circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60191509A true JPS60191509A (en) | 1985-09-30 |
Family
ID=12776474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4748784A Pending JPS60191509A (en) | 1984-03-12 | 1984-03-12 | Low noise amplifier circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60191509A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008531905A (en) * | 2005-02-24 | 2008-08-14 | エーベーエム−パプスト ザンクト ゲオルゲン ゲーエムベーハー ウント コー．カーゲー | Manufacturing method of mini fan and mini fan manufactured by this method |
| US7556090B2 (en) | 2004-03-03 | 2009-07-07 | Denso Corporation | Vehicular air-conditioner providing a comfortable condition for a passenger |
-
1984
- 1984-03-12 JP JP4748784A patent/JPS60191509A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7556090B2 (en) | 2004-03-03 | 2009-07-07 | Denso Corporation | Vehicular air-conditioner providing a comfortable condition for a passenger |
| JP2008531905A (en) * | 2005-02-24 | 2008-08-14 | エーベーエム−パプスト ザンクト ゲオルゲン ゲーエムベーハー ウント コー．カーゲー | Manufacturing method of mini fan and mini fan manufactured by this method |
| US8727746B2 (en) | 2005-02-24 | 2014-05-20 | Ebm-Papst St. Georgen Gmbh & Co. Kg | Method of producing a mini fan and a mini fan produced according to said method |
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