JPS60183449U - Bridge type semiconductor device - Google Patents

Bridge type semiconductor device

Info

Publication number
JPS60183449U
JPS60183449U JP1984070598U JP7059884U JPS60183449U JP S60183449 U JPS60183449 U JP S60183449U JP 1984070598 U JP1984070598 U JP 1984070598U JP 7059884 U JP7059884 U JP 7059884U JP S60183449 U JPS60183449 U JP S60183449U
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
electrode plate
bridge type
rising
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1984070598U
Other languages
Japanese (ja)
Inventor
畑　暁
広治 古里
Original Assignee
新電元工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to JP1984070598U priority Critical patent/JPS60183449U/en
Publication of JPS60183449U publication Critical patent/JPS60183449U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のブリッジ型半導体装置の構造図、第２図
ａ、　ｂは本考案の実施例をしめず構造図、第３図は第
３の電極板の他の実施例をしめず構造図、第４図は本考
案の構造例の分解図であり、１．２．　３．　４は電極
板、ｌａ、２ａは半導体チップ固着部、３ａｔ４ａは接
続板部、３ｂ。 ４ｂはリード部、３ｃ、４ｃは立上り部、５はモールド
樹脂、Ｄ□、　Ｄ２．　Ｄ３．　Ｄ４は半導体チップで
ある。Figure 1 is a structural diagram of a conventional bridge type semiconductor device, Figures 2a and b are structural diagrams of an embodiment of the present invention, and Figure 3 is a structural diagram of another embodiment of the third electrode plate. Figure 4 is an exploded view of a structural example of the present invention, and 1.2. 3. 4 is an electrode plate, la, 2a is a semiconductor chip fixing part, 3at4a is a connecting plate part, 3b. 4b is a lead part, 3c and 4c are rising parts, 5 is mold resin, D□, D2. D3. D4 is a semiconductor chip.

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）一端に半導体チップ固着部を有する第１、第２の
電極板と接続板部、立上り部及びリード部をもつ第３、
第４９電極板と複数個の半導体チップから成り、第１、
第２の電極板の半導体チップ固着部を中央にして、該固
着部の両面に夫々半導体チップを設け、更に第３、第４
の電極板の接続板部で挾むように固着し、且つ夫々の立
上り部がリード部の面に対し、互に反対に位置するよう
に構成したことを特徴とするブリッジ型半導体装置。(1) first and second electrode plates having a semiconductor chip fixing part at one end; a third electrode plate having a connecting plate part; a rising part and a lead part;
Consisting of a 49th electrode plate and a plurality of semiconductor chips, the first
With the semiconductor chip fixing part of the second electrode plate in the center, semiconductor chips are provided on both sides of the fixing part, and third and fourth
1. A bridge-type semiconductor device, characterized in that the electrode plates are fixed in a sandwiching manner between connecting plate portions, and each rising portion is positioned opposite to the surface of the lead portion. （２）第３、第４の電極板の夫々の立上り部及びリード
部を各半導体チップの同一側面側に配置し、第１、第２
の電極板を反対側面側に配置するように七た実用新案登
録請求の範囲第（１）項記載のブリッジ型半導体装置。(2) The rising portions and lead portions of the third and fourth electrode plates are arranged on the same side of each semiconductor chip, and the first and second
The bridge type semiconductor device according to claim 1, wherein the electrode plate is disposed on the opposite side. （３）、接続板部及び立上り部と分割されたリード部を
相互に固着して構成した第３又は第４の電極板を用いた
実用新案登録請求の範囲第（１）項又は第（２）項記載
のブリッジ型半導体装置。(3) Claims (1) or (2) for registering a utility model using a third or fourth electrode plate configured by mutually fixing a connecting plate portion, a rising portion, and a divided lead portion. ) The bridge type semiconductor device described in item 2.
JP1984070598U 1984-05-15 1984-05-15 Bridge type semiconductor device Pending JPS60183449U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984070598U JPS60183449U (en) 1984-05-15 1984-05-15 Bridge type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984070598U JPS60183449U (en) 1984-05-15 1984-05-15 Bridge type semiconductor device

Publications (1)

Publication Number Publication Date
JPS60183449U true JPS60183449U (en) 1985-12-05

Family

ID=30607320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984070598U Pending JPS60183449U (en) 1984-05-15 1984-05-15 Bridge type semiconductor device

Country Status (1)

Country Link
JP (1) JPS60183449U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752158A (en) * 1980-09-12 1982-03-27 Internatl Rectifier Corp Japan Ltd Composite semiconductor device
JPS60101958A (en) * 1983-11-08 1985-06-06 Rohm Co Ltd Manufacture of diode device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752158A (en) * 1980-09-12 1982-03-27 Internatl Rectifier Corp Japan Ltd Composite semiconductor device
JPS60101958A (en) * 1983-11-08 1985-06-06 Rohm Co Ltd Manufacture of diode device

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