JPS60182721A - Vapor growth method - Google Patents

Abstract

PURPOSE:To obtain a growth layer having steep impurity distribution by housing a liner pipe with a partition wall hanging down up to the central section of a reaction pipe of the inner circumference of the reaction pipe, inserting a susceptor with a stopper being in contact with the partition wall to the bottom of the liner pipe and moving a substrate to be treated in the reaction pipe partitioned by these partition wall, liner pipe and susceptor through a through-hole formed to the stopper. CONSTITUTION:A liner pipe 2 made of quartz is housed in a cylindrical reaction pipe 1 on which a high-frequency coil 17 is wound, and a susceptor 5 made of carbon on which a substrate to the treated 10 is placed is taken into and out of the base of the liner pipe 2 by using an inserting bar 6 made of quartz. In the constitution, a semicircular partition wall 3 is hung down from the lower surface of the liner pipe 2, a stopper 7 is projected and formed to the surface of the susceptor 5, a base thereof takes a semicircle, and the inside of the liner pipe 2 is partitioned into reaction chambers I and II by these partition wall, susceptor and stopper. A raw material gas introducing port and a discharge port are shaped previously in the reaction pipe 1, the substrate 10 treated in the reaction chamber I is passed through a through-hole 11 formed to the stopper 7 and moved into the reaction chamber II, and an upper layer is grown.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a vapor phase growth method capable of growing a vapor phase growth layer having a steep interfacial composition and doping profile.

(b) Technical background Semiconductor devices such as ICs, LSIs, and semiconductor lasers are made of semiconductors such as silicon (St) or gallium arsenide (GaAs).
The substrate is a compound semiconductor such as
It is manufactured by forming epitaxial layers with different degrees of hardness or by forming a heteroepitaxial layer and performing pattern JR using photolithography.

Here, the epitaxial or heteroepitaxial layer is formed by the chemical vapor deposition method (hereinafter sometimes referred to as the CVD method) according to the present invention, the liquid phase method, and the molecular N':A epitaxy method (MBE). etc., and each is used depending on its characteristics.

In addition, semiconductors; (For the formation of semiconductors, it is necessary to form an insulating layer on the substrate, and the CVD method is often used for this formation. Silicon dioxide (SiO2), silicon nitride (SiaN+)
No-insulation is often performed using thin films such as.

The present invention uses the CVD method to form JJ! , relates to a configuration of a CVD apparatus suitable for producing layers in succession.

(c) Prior art and problems In the formation of semiconductor elements, even when growing semiconductor layers of different conductivity types such as PN junctions, or when growing semiconductor layers on high-resistance substrates, the concentration distribution in the semiconductor layer is It is necessary that the slope is as steep as possible.

Conventionally, therefore, methods have been proposed in which the substrate to be processed after vapor phase growth can be easily taken out, or the substrate to be processed is covered with a lid.

In other words, the susceptor on which the substrate to be processed is placed has a double structure so that each susceptor can be replaced using a handler, or the handler can be used to cover the substrate to suppress vapor phase growth. There are also methods in place.

However, these methods have complicated mechanisms and have not achieved sufficient effects.

(d) Object of the Invention The object of the present invention is to provide a vapor phase growth method capable of forming a semiconductor layer having a steep doping profile using a Daisei substrate.

(e) Structure of the Invention The purpose of the present invention is to insert a substrate holder on which a substrate to be processed is placed into a reaction chamber separated into a plurality of spaces by a partition, and to insert the substrate holder provided in the partition into a reaction chamber. After almost completely separating the desired space from other spaces by moving the substrate holder into each of the spaces through possible through-holes and blocking the through-holes with a portion of the substrate holder, This can be achieved by a vapor phase growth method characterized by vapor phase growing semiconductor chips on a substrate to be processed placed on the substrate holder in a space.

(f) Embodiments of the Invention The present invention provides a partition wall in a reaction tube to divide it into a plurality of reaction chambers, and a susceptor carrying a substrate to be processed is moved through the partition wall, thereby achieving steep doping. A semiconductor layer having a profile is formed.

FIG. 1(4) is a side cross-sectional view of a semiconductor growth apparatus used for carrying out the present invention, and FIG. 1(4) is a vertical cross-sectional view taken along the line XX'.

That is, the growth apparatus according to the present invention has a liner tube 2 made of quartz inside the reaction tube 1, and the liner tube 2 includes the reaction tube 1.
A semicircular partition wall 3 is provided to divide the reaction chamber into V number (in this case, two) of reaction chambers.

Next, the inlet of the reaction chamber is sealed by a stainless steel manifold 4, and a semicircular carbon ring susceptor 5 can be inserted from this inlet.This susceptor 5 is inserted into the liner (I!I2 The liner tube 2 is configured to be divided into separate reaction chambers by sliding the inside of the liner tube 2 and aligning it with the partition wall 3.

Note that there is a slight gap between the liner tube 2 and the reaction tube 1, but since the gas flow resistance is large in this area, for example, the gas in the reaction chamber (1) flows into the reaction chamber (n). Never.

That is, the carbon ring susceptor 5 has a semicircular cross-sectional shape, and the upper surface central portion 7 protrudes to function as a stopper, and the lower surface is also shaved down to the central portion so that the liner tube 2
Accurate positioning with the partition wall 3 is achieved by hitting the stopper 8 provided at the partition wall 3.

Next, a carbon ring substrate holder 9 is placed on top of the carbon ring susceptor 5, and the substrate 10 to be processed is fitted into the cut upper recess of the substrate holder 9.

In addition, the center portion 7 of the upper surface of the carbon susceptor 5 is shown in FIG.
) as shown in 4. The moving opening 1 into which the plate holder 9 can be inserted
The reaction chamber (II) is moved from the reaction chamber (1) through the transfer port 11 under the partition wall 3 by sliding it using a quartz operating rod 12 connected to the substrate holder 9. ).

At this time, the position of the substrate holder 9 may be automatically controlled from the outside, or the susceptor 5 in the reaction chamber (II) may be controlled automatically.
A convex portion may be provided at the end of the plate to serve as a stopper.

The reaction chambers (r) and (11) are provided with independent reaction gas supply pipes 13.14 and exhaust ports 15.16, respectively.

In this manner, with the end of the substrate holder 9 inserted into the moving port 11 of the carbon susceptor 5, gas is supplied from the reaction gas supply pipe 13 and discharged from the exhaust port 15, and the high frequency coil 17 is energized to remove the carbon susceptor. 5 is induction heated to perform a gas phase reaction, and then the operating rod 12 is pushed and the opposite end of the substrate holder 9 is slid into the grouping opening 11 of the carbon susceptor 5 until the reaction gas is supplied. If vapor phase growth is performed using gas supplied from the tube 14, a grown layer with a steep doping profile can be formed.For example, when forming a field effect transistor (FET), semi-insulating gallium arsenide (G aA s ) It is necessary to form a buffer layer with low carrier density on the substrate to block the engravings on the substrate (7) to form an active layer on top of this.

In this case, water 2 (H
z), a mixed gas consisting of arsine (AsHs) and trimethyl gallium (abbreviated as TMG) was supplied, while a mixed gas consisting of H* + ABH31TMG and hydrogen sulfide (aSS) was supplied from the gas supply pipe 14 of the reaction chamber (2). By sliding the substrate holder 9 as described above, it is possible to form a semiconductor layer having a steep doping profile from the buffer layer to the active layer.

Next, although FIG. 1 shows the case where the reaction tube 1 is heated with a high frequency coil 17, it can also be heated with a lamp.

Figure 2 (5) and (B) are examples using this.
) is a cross-sectional view taken along the line xx', and (B) is a cross-sectional view taken along the line xx'.

When this method is adopted, the heating lamp 20 does not need to be provided surrounding the reaction tube 1, so the gas supply pipe 21 can be provided at the top, and there is sufficient space. It is possible to provide separate reaction chambers.

In the case of this embodiment, the carbon susceptor 22 is joined to partition walls 24 provided to protrude from the top and bottom of the liner tube 23, thereby creating mutually isolated reaction chambers and is also removable.

In other words, 8.
The partition wall between the reaction chamber (river) and (I) is slightly smaller than that between the reaction chamber (T) and (111), so that the carbon susceptor 22 can be removed.

Further, a protruding portion on the upper surface of the carbon susceptor 22 that is aligned with the partition wall 24 is provided with a movement port 11 through which the substrate holder 9 placed on the carbon susceptor 22 passes, and the operation rod 12 can be used to move the reaction chamber ( A gas phase reaction can be carried out by sequentially sliding from 1) to (II) and (I).

(g) Effects of the Invention In the present invention, a substrate holder on which a substrate to be processed is mounted is inserted into a reaction chamber separated into a plurality of spaces by a partition wall, and the above-mentioned substrate is inserted into each space through a through hole provided in the partition wall. Since the semiconductor layer is grown by moving the substrate holder one after another, it is possible to form a semiconductor layer with a steep doping profile.

[Brief explanation of the drawing]

FIG. 1(4) is a side sectional view of a semiconductor growth apparatus embodying the present invention, FIG. 2 is a side sectional view of another embodiment, and FIG. In the figure, 1 is a reaction tube, and 2.23 is a liner tube. 3.24 is a partition wall, 5.22 is a susceptor, 9 is a substrate holder, 10 is a substrate to be processed, 11 is a moving port, 12 is an operating rod,
13, 14, and 21 are gas supply pipes, and 15.16 is an exhaust port.

Claims (1)

[Claims] A substrate holder on which a substrate to be processed is mounted is inserted into a reaction chamber separated into a plurality of spaces by a partition wall, and the substrate holder is inserted into each space through a through hole provided in the partition wall through which the substrate holder can be inserted. Move into space #I! l L, by blocking the through hole with a part of the substrate holder,
Vapor phase growth, characterized in that after a desired space is almost completely separated from other spaces, a semiconductor layer is vapor phase grown on a substrate to be processed placed on the substrate holder within the desired space. Method.