JPS60182703A - Method of producing thin film resistor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] This invention relates to a method for manufacturing thin film resistors.

For example, thin filaments made of sputtered MO-81 are used for heating resistors for thermal printing, Schottky FET formation, V-HL wiring, ultra-LSI wiring, and the like.

The method for producing such a thin film is already well known. For example, in the case of direct current bipolar sputter deposition, Mo-S is deposited in a vacuum jar 1 as shown in principle in FIG.
Arrange the I-get 2 consisting of i and the substrate 3 which is a positive image.
4 is a vacuum evacuation hole which causes an abnormal gelatin emission γ1f between the F sea and the air. Usually, Ar gas is used as the discharge gas. Herium ion 7'I; collides with target 2 and knocks out atoms - this 75; adheres to substrate 3; , a MO-Si thin film 5 is formed due to the cracking. FIG. 2 shows an example of the target 2, which is constructed by depositing Si 6 on the top surface of a MO-h-rough substrate 5. ), (
By changing the surface area of Si6 relative to the surface area of body 5, thin films 11 with different contents of Sl relative to MO can be produced. Of course, the l-get is not limited to f15 having such a configuration, but also sintered alloys with different Si contents.

It may be a mixed powder.

The characteristic curve DA shown in Fig. 8 is the specific resistance # (μΩ-c! .

A, B11-1 - Characteristic curves of MO-8i thin film produced by the conventional method described above are shown. As can be understood from this, the resistance IIFn narrowing coefficient 'L'OR changes linearly until the 81 content rate reaches eomo/%8hiko.
It can be seen that it is thermally stable. The specific resistance of this case is within a relatively low range of 200 Ω-α or less. However, if you need something with a high specific resistance, for example about 400 to 1000 μΩ-C1n, depending on the purpose of use, it may be better to increase the content of -81. )+6(1rr1077%
If the resistivity is exceeded, the resistance/temperature coefficient force (f) will move significantly (f) and become thermally unstable. 1/J (very internal key).

The object of the present invention is to produce a thin film with high resistivity in a thermally stable and reproducible manner.

This invention is the same as the conventional method in that sputtering is performed using a target made of M*-8i, but is characterized in that Nil gas is used as part or all of the discharge gas. In this way, when all N9 gas is used, Mn ke N
(Contrary to theory, since Sl is the cause of the reaction, a thin film consisting of three elements of MO-81, -N is formed in the form of compounds such as SiN and 5iRN4). It becomes like this.

And Sl, N, Sj*N4 die thermally stable,
It also contributes to increasing specific resistance.

Characteristic curves C and D of the 81st model show the specific resistance and resistance thirst coefficient according to the present invention. Tanae has a specific resistance of 8o.

When trying to obtain a resistance of μΩ−m or more, the Si content should be increased to 20rrl○ρ% or more (and the resistance wettability coefficient should be increased by 2Sj− content, so that almost no In this case, if there are two or more gas introduction systems in the sputtering apparatus a, the Ar gas and the ~9 gas can be combined to handle the target with the same 81 content. It is advantageous to selectively form a thin 11ψ with a high and low image resistivity of 45T even when used for various purposes.

The above characteristic curves C and D have a gas pressure of a mixed gas of N and Ar, f 5.0 mTorr, and a N9 partial pressure of 1.5 m'.
This is the result of sputtering with RORR. The gas pressure at N and +A is 1. +1~5 nm Torr
, N and a partial pressure of 1,n to 10 m'rorr are suitable. Below 1.0 m'rOrr, the discharge becomes [7((), and above nmTorr, the reproducibility of resistivity is poor (
According to the present invention, N9 gas is used as part or all of the discharge gas to generate a thin film by sputtering with a -MO-8i target. The thin film becomes a compound of -MO-3i-N, and as a result, even when making a thin film resistor with a specific resistance of 2QOμΩ-a or more, the resistance temperature coefficient remains relatively stable. It's so easy to make eggs that it's extremely simple to make.

[Brief explanation of drawings]

FIG. 11 is a diagram illustrating the principle of sputtering.Maki 21 is a diagonal diagram of a target.FIG. 2...Target, 3...Substrate, 5.
...Mo moving base-6...Sl Fig. 1 Fig. 3

Claims (1)

[Claims] An IN produced by sputtering a target made of Mo-8i in a discharge gas partially or entirely composed of Nz gas to produce a Mo-Si-N thin film resistor on a substrate.
How to use K'J resistance.