JPS60175569A - Coating apparatus to semiconductor substrate - Google Patents

Coating apparatus to semiconductor substrate

Info

Publication number
JPS60175569A
JPS60175569A JP3170784A JP3170784A JPS60175569A JP S60175569 A JPS60175569 A JP S60175569A JP 3170784 A JP3170784 A JP 3170784A JP 3170784 A JP3170784 A JP 3170784A JP S60175569 A JPS60175569 A JP S60175569A
Authority
JP
Japan
Prior art keywords
photoresist
coating
semiconductor substrate
photosensitive material
discharge nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3170784A
Other languages
Japanese (ja)
Inventor
Hidemi Amai
秀美 天井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3170784A priority Critical patent/JPS60175569A/en
Publication of JPS60175569A publication Critical patent/JPS60175569A/en
Pending legal-status Critical Current

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Landscapes

  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a good coating state from the beginning, by imparting moving function to the photoresist emitting nozzle in a coating apparatus to a semiconductor substrate. CONSTITUTION:Moving function by a drive means 1 such as a motor is imparted to a photoresist emitting nozzle 3 equipped with a means 2 for emitting the solvent of a photoresist from the periphery of a photoresist emitting orifice. By this method, a good coating state is obtained from the beginning even after an apparatus has been stopped for a long time.

Description

【発明の詳細な説明】 不発明は半導体基板えの塗布装置にかがシ、とくに半導
体製造工程の写真蝕刻工程における半導体基板(以下ウ
ェハと呼ぶ)表面に感光材(以下フォトレジストと呼ぶ
)を回転塗布する半導体基板えの塗布装置に関するもの
である。
[Detailed Description of the Invention] The present invention relates to a coating device for semiconductor substrates, particularly for coating a photosensitive material (hereinafter referred to as a photoresist) on the surface of a semiconductor substrate (hereinafter referred to as a wafer) in a photolithography process of a semiconductor manufacturing process. This invention relates to a coating device for spin-coating semiconductor substrates.

半導体製造工程における半導体基板えの塗布装置は近年
、半導体素子の高密度化、極めて高い微細加工が進むに
つれて、良好な塗布状態のウェノ・処理を要求されてい
る。半導体製造工程において要求される良好なウェハ表
面への7オトレジスト塗布状態とはウェハ表面に形成さ
れるフォトレジスト塗布膜内に不純物の混入が無く、所
望のフォトレジスト塗布膜厚でウェア1表面全体におい
て均一な塗布膜厚が得られ、さらに前記内容がウエノ1
の連続処理において安定して得られることが望ましい、
フォトレジスト塗布膜の状態に影響を与える要素として
は半導体基板塗布装置自身に起因する塗布処理部の形状
、雰囲気の流れ、ウェハの回転数及び回転加速度等と7
オトレジスト自身に起因するフォトレジストの材質1分
子量及び粘度等が有る。半導体基板塗布装置自身に起因
する要素は、従来からの経験及び技術革新等によシ比較
的良好なものが提供されている。
In recent years, coating equipment for semiconductor substrates used in semiconductor manufacturing processes is required to provide coatings with good coating conditions as the density of semiconductor elements and extremely fine processing have progressed. 7. Good photoresist coating condition on the wafer surface required in the semiconductor manufacturing process means that there is no contamination of impurities in the photoresist coating film formed on the wafer surface, and the desired photoresist coating film thickness is applied to the entire surface of the ware 1. A uniform coating film thickness was obtained, and the above contents were
It is desirable to be able to obtain it stably in continuous processing.
Factors that affect the condition of the photoresist coating film include the shape of the coating processing section caused by the semiconductor substrate coating equipment itself, the flow of the atmosphere, the rotational speed and rotational acceleration of the wafer, etc.
There are molecular weight, viscosity, etc. of the photoresist material that are caused by the photoresist itself. As for the elements originating from the semiconductor substrate coating apparatus itself, relatively good ones have been provided through conventional experience and technological innovation.

又、フォトレジスト自身に起因する要素も同様に比較的
良好なものが提供されているが、その本来持つ素性は経
時的に変化を起こす、前記、7トレジストの素性の経時
的変化で最も顕著なものはフォトレジストに含有されて
いる溶剤の揮発による粘度の変化である。
In addition, relatively good elements are also provided that are caused by the photoresist itself, but its original properties change over time. The change in viscosity is caused by the volatilization of the solvent contained in the photoresist.

実作業における半導体基板えの塗布装置での7オトレジ
ストの収納状態は、一般的に外部雰囲気に無出し、フォ
トレジストの粘度変化を発生する個所はフォトレジスト
配管系の最終段であるフォトレジスト吐出ノズルである
。半導体基板えの塗布装置を連続作業している場合では
フォトレジスト吐出ノズル先端での粘度変化は短時間で
ある為、フォトレジストの塗布状態にはほとんど悪影4
は与えない。
In actual work, the photoresist is stored in the coating equipment for semiconductor substrates so that it is not exposed to the outside atmosphere, and the location where photoresist viscosity changes occur is the photoresist discharge nozzle, which is the final stage of the photoresist piping system. It is. When the coating equipment for semiconductor substrates is continuously operated, the viscosity change at the tip of the photoresist discharge nozzle is short-lived, so it hardly affects the photoresist coating condition4.
will not be given.

しかしながら、ある程の時間、装置を停止した場合、フ
ォトレジスト吐出ノズル先端での7オトレジスト粘度変
化はフォトレジスト塗布状態に悪影響を与えるまで進行
する。さらにフォトレジスト吐出ノズル先端周囲で粘度
変化を起こし硬化し付着したフォトレジストは多重なフ
ォトレジストを吐出ノズルよフ吐出させるか、又は、吐
出ノズル先端を洗浄しなければ、良好な塗布状態を得ら
れるように復帰しない。
However, when the apparatus is stopped for a certain period of time, the change in the viscosity of the photoresist at the tip of the photoresist discharge nozzle continues until it adversely affects the photoresist application state. Furthermore, the viscosity changes around the tip of the photoresist discharge nozzle, and the hardened and adhered photoresist cannot be coated in a good condition unless multiple photoresists are discharged from the discharge nozzle or the tip of the discharge nozzle is cleaned. It doesn't come back like that.

したがって、従来の半導体基板塗布装置ではある程度の
時間、装置の使用を停止した場合、再び良好な塗布状態
を得る為に多大な時間と作業を費し、はなはだ非効率的
なものであった。
Therefore, in the conventional semiconductor substrate coating apparatus, when the apparatus is not used for a certain period of time, it takes a lot of time and work to obtain a good coating condition again, which is extremely inefficient.

本発明の目的は、前記した従来の半導体基板塗布装置の
非効率性を解消し、長時間装置を停止した後でも復旧作
業等を全く必要とせず、最初から良好な塗布状態が得ら
れる半導体基板えの塗布装置を提供するものである。
An object of the present invention is to eliminate the inefficiency of the conventional semiconductor substrate coating equipment described above, and to provide a semiconductor substrate that does not require any restoration work even after the equipment has been stopped for a long time, and can obtain a good coating state from the beginning. The present invention provides an enamel coating device.

不発明の特徴は、半導体基板えの塗布装置における7オ
トレジスト吐出ノズルに対し、移動機能を持たせたこと
である。さ、らに本発明の他の特徴はフォトレジスト吐
出ノズル先端周囲よシアオドレジストの溶剤である洗浄
液を吐出する手段を備えたことである。又、不発明の別
の特徴は各ウェハの塗布処理毎、又は、複数ウニハリロ
ット単位での塗布処理毎、又は、設定枚数でのウェハの
塗布処理毎等でフォトレジスト吐出ノズルが塗布処理部
廃液カップ内でウェハを真空吸着し回転さるスピンチャ
ックを避けた位置へ移動しフォトレジストの吐出及び洗
浄液の吐出を自動的に行い、フォトレジスト吐出ノズル
先端を常時清浄な状態に保ち、又、長時間作業を停止し
た後でも、塗布処理を再開1−る直前に7オトレジスト
吐出ノズルが移動した位置で7オトレジストの空吐出を
自動的に行うことによシ良好な塗布状態を得る為の復旧
作業等は全く必要とせず、最初から良好な塗布状態が得
られるようにしたことである。
A unique feature of the present invention is that the seven photoresist discharge nozzles in the coating apparatus for semiconductor substrates are provided with a moving function. In addition, another feature of the present invention is that means is provided for discharging a cleaning liquid, which is a solvent for shear resist, around the tip of the photoresist discharging nozzle. Another feature of the invention is that the photoresist discharge nozzle is removed from the waste liquid cup of the coating processing section every time each wafer is coated, or every time a plurality of wafers are coated, or every time a set number of wafers are coated. The wafer is vacuum-suctioned inside the chamber, moved to a position that avoids the rotating spin chuck, and the photoresist and cleaning solution are automatically discharged to keep the tip of the photoresist discharge nozzle clean at all times and to allow long hours of work. Even after stopping the coating process, recovery work can be carried out to obtain a good coating condition by automatically emptying the 7 Otoresist at the position where the 7 Otoresist discharge nozzle has moved just before restarting the coating process. This is not necessary at all, and a good coating condition can be obtained from the beginning.

不発明の実施例t−第1因、第2図によシ説明する。第
1図において塗布処理部はエアシリンダー又はモーター
等の駆動手段lによる移動機能と、フォトレジスト吐出
口周囲よシフオドレジストの溶剤である洗浄液を吐出す
る手段2による洗浄機能を備えたフォトレジスト吐出ノ
ズル3と、排気及び廃液配管4t−備えた廃液カップ5
と、ウェハを真空吸着し固定する機能とモーター等によ
る回転機能を備えたスピンチャック6より構成される。
Embodiment t--The first factor will be explained with reference to FIG. In FIG. 1, the coating processing section has a movement function using a driving means 1 such as an air cylinder or a motor, and a cleaning function using a means 2 that discharges cleaning liquid, which is a solvent for shift resist, from around the photoresist discharge opening. Waste liquid cup 5 equipped with a nozzle 3 and 4t of exhaust and waste liquid piping
and a spin chuck 6 which has a function of vacuum suction and fixation of the wafer and a function of rotation by a motor or the like.

第2図は7オドレジスト吐出ノズル3の断面を示すもの
であり、7オドレジスト吐出口周囲よりフォトレジスト
の溶剤である洗浄液を吐出する配管2を備えたものであ
る。
FIG. 2 shows a cross section of a 7-odresist discharge nozzle 3, which is equipped with a pipe 2 for discharging a cleaning liquid, which is a solvent for photoresist, from around the 7-odresist discharge port.

不発明による半導体基板塗布−#C置の動作はウェハ表
面に対しフォトレジストの塗布処理は、フォトレジスト
吐出ノズル3はスピンチャック6の回転中心付近にあシ
、塗布処理終了後、フォトレジスト吐出ノズル3は廃液
カップ5内でスピンチャ、り6を避けた位置へ移動し、
洗浄液配管2よう洗浄液を吐出しフォトレジスト吐出ノ
ズル3先端を洗浄し、再びウェハ塗布処理を行う場合は
、フォトレジスト吐出ノズル3がスピンチャック6を避
けた位置で7オトレジストの空吐出を行った後、スピン
ナ1フ460回転中心付近へ戻シウェハに対する塗布処
理を行うものである。
Semiconductor substrate coating by non-invention - #C The operation of the photoresist coating process on the wafer surface is such that the photoresist discharge nozzle 3 is placed near the rotation center of the spin chuck 6, and after the coating process is completed, the photoresist discharge nozzle 3 moves within the waste liquid cup 5 to a position avoiding the spincher and ri 6,
When cleaning the tip of the photoresist discharge nozzle 3 by discharging the cleaning solution from the cleaning solution pipe 2 and performing the wafer coating process again, after emptyly discharging 7 photoresists at a position where the photoresist discharge nozzle 3 avoids the spin chuck 6. , the spinner 1 is returned to the vicinity of the rotation center and the coating process is performed on the wafer.

以上説明したように、不発明により常時、良好な塗布状
態が得られる半導体基板塗布装置を提供でき、半導体製
造工程に多大な効果音もたらすものである。
As explained above, the invention makes it possible to provide a semiconductor substrate coating apparatus that can always obtain a good coating state, and brings great sound effects to the semiconductor manufacturing process.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は不発明の一実施例を示す構成図であり、第2図
U7.r)レジスト吐出ノズルの断面図である。 尚、図において。 l・・・・・・ノズル駆動手段、2・・・・・・洗浄液
配管、3・・・・・・フォトレジスト吐出ノズル、4・
・・・・・廃液配管。 5・・・・・・廃液力、プ、6・・・・・・スピンチャ
ック、7・・・・・・フォトレジスト配管である。 第7図 第?図
FIG. 1 is a block diagram showing an embodiment of the invention, and FIG. 2 is a block diagram showing an embodiment of the invention. r) A cross-sectional view of a resist discharge nozzle. In addition, in the figure. l... Nozzle driving means, 2... Cleaning liquid piping, 3... Photoresist discharge nozzle, 4.
...Waste liquid piping. 5... Waste liquid power, 6... Spin chuck, 7... Photoresist piping. Figure 7? figure

Claims (1)

【特許請求の範囲】 +1.1 半導体基板表面に感光材を回転塗布する半導
体基板塗布装置において、感光材吐出ノズルに移動機能
を持たせたことを特徴とする半導体基板えの塗布装置。 (2)前記移動機能は半導体基板処理動作に準じ自動的
に感光材吐出ノズルを移動させる機能を有していること
を特徴とする特許請求の範囲第(1)項記載の半導体基
板えの塗布装置。 (3)前記感光材吐出ノズルはその先端周囲よシ感光材
の溶剤である洗浄液を吐出し該感光材吐出ノズルの先端
を洗浄する機能を有して因ることを特徴とする特許請求
の範囲第(1)項もしくは第(2)項記載の半導体基板
えの塗布装置。 (4)半導体基板処理動作に準じ自動的に感光材吐出ノ
ズル先端の洗浄及び感光材の空吐出を行う機能を持たせ
たことを特徴とする特許請求の範囲第(1)項、第(2
)項もしくは第(3)項記載の半導体基板塗布装置。
[Scope of Claims] +1.1 A semiconductor substrate coating device for spin-coating a photosensitive material onto the surface of a semiconductor substrate, characterized in that a photosensitive material discharge nozzle is provided with a moving function. (2) The moving function has a function of automatically moving the photosensitive material discharge nozzle according to the semiconductor substrate processing operation, and the coating of the semiconductor substrate according to claim (1) Device. (3) The photosensitive material discharging nozzle has a function of discharging a cleaning liquid, which is a solvent for the photosensitive material, around the tip of the photosensitive material discharging nozzle to clean the tip of the photosensitive material discharging nozzle. A coating apparatus for a semiconductor substrate according to item (1) or item (2). (4) Claims (1) and (2) have a function of automatically cleaning the tip of the photosensitive material discharging nozzle and emptying the photosensitive material in accordance with semiconductor substrate processing operations.
) or (3).
JP3170784A 1984-02-22 1984-02-22 Coating apparatus to semiconductor substrate Pending JPS60175569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3170784A JPS60175569A (en) 1984-02-22 1984-02-22 Coating apparatus to semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3170784A JPS60175569A (en) 1984-02-22 1984-02-22 Coating apparatus to semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS60175569A true JPS60175569A (en) 1985-09-09

Family

ID=12338539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3170784A Pending JPS60175569A (en) 1984-02-22 1984-02-22 Coating apparatus to semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS60175569A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63301520A (en) * 1987-05-30 1988-12-08 Nec Corp Photoresist coating device
JPH0191426A (en) * 1987-10-02 1989-04-11 Shiotani Seisakusho:Kk Spin coating device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632724A (en) * 1979-08-24 1981-04-02 Hitachi Ltd Photoresist applying apparatus
JPS57135057A (en) * 1981-02-16 1982-08-20 Tokyo Denshi Kagaku Kabushiki Nozzle for dripping liquid

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632724A (en) * 1979-08-24 1981-04-02 Hitachi Ltd Photoresist applying apparatus
JPS57135057A (en) * 1981-02-16 1982-08-20 Tokyo Denshi Kagaku Kabushiki Nozzle for dripping liquid

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63301520A (en) * 1987-05-30 1988-12-08 Nec Corp Photoresist coating device
JPH0191426A (en) * 1987-10-02 1989-04-11 Shiotani Seisakusho:Kk Spin coating device

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