JPS60175025A - Optical demultiplexer - Google Patents
Optical demultiplexerInfo
- Publication number
- JPS60175025A JPS60175025A JP59029568A JP2956884A JPS60175025A JP S60175025 A JPS60175025 A JP S60175025A JP 59029568 A JP59029568 A JP 59029568A JP 2956884 A JP2956884 A JP 2956884A JP S60175025 A JPS60175025 A JP S60175025A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- lambda0
- waveguide
- changed
- charging current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】
(技術分野)
本発明は小型で波長選択性の鋭い光分波器に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a compact optical demultiplexer with sharp wavelength selectivity.
(背景技術)
従来のこの種の光分波器としては、2本の光導波路間の
結合特性が波長選択性を持つ事を利用した方向性結合器
型光分波器が挙げられる。この光分波器の波長選択性は
2つの光導波路間の結合度で決シ、選択性を鋭くするた
めには結合度を弱くしなければならない。その結果素子
長が長くなシ挿入損失が大きくなることや、作製精度の
高い事が要求される事等の欠点がある。さらに波長選択
特性が周期性を持つ事から単一素子で単一の波長光を選
択取出すことが困難である。(Background Art) As a conventional optical demultiplexer of this type, there is a directional coupler type optical demultiplexer that utilizes the fact that the coupling characteristic between two optical waveguides has wavelength selectivity. The wavelength selectivity of this optical demultiplexer is determined by the degree of coupling between the two optical waveguides, and in order to sharpen the selectivity, the degree of coupling must be weakened. As a result, there are drawbacks such as a long element length, increased insertion loss, and a requirement for high manufacturing precision. Furthermore, since the wavelength selection characteristic has periodicity, it is difficult to selectively extract light of a single wavelength with a single element.
また波長選択性素子として誘電体多層膜のパントノ!ス
フィルタを用いる光分波器があるが、先導波路化して集
積化することが困難、中心波長を後でチューニングする
ことが困難、挿入損失が大きい等の欠点がある。In addition, Pantono! dielectric multilayer film can be used as a wavelength selective element. There are optical demultiplexers that use filters, but they have drawbacks such as difficulty in forming a leading waveguide and integrating them, difficulty in later tuning the center wavelength, and large insertion loss.
(発明の課題)
本発明はこれらの欠点を解決するためにアクティブ型の
光フイルタ特性を利用するもので、以下図面について詳
細に説明する。(Problem of the Invention) The present invention utilizes the characteristics of an active type optical filter in order to solve these drawbacks, and will be described in detail below with reference to the drawings.
(発明の構成および作用)
第1図は本発明の一実施例であシ、構成の概略図である
。lはpn接合で構成される導波路で周期Aの構造を持
つ。2,3は導波路1のクラツディングであり、これら
の構造は埋込型DFBレーデとして実現されている構造
と同様である。4はビームスプリッタであシ、反射光を
分離して取シ出す機能を持つものである。したがってこ
こでは構成上簡単のためビームスシリツタとしであるが
光サーキュレータを用いてもよい。また信号光の入射、
取シ出しは図面での説明上簡単に矢印で示しであるが導
波路構造としても良いことは言うまでもない。(Structure and operation of the invention) FIG. 1 is an embodiment of the present invention, and is a schematic diagram of the structure. 1 is a waveguide composed of a pn junction and has a structure with a period A. 2 and 3 are claddings of the waveguide 1, and these structures are similar to those realized as an embedded DFB radar. Reference numeral 4 is a beam splitter, which has a function of separating and extracting reflected light. Therefore, although a beam sinter is used here for the sake of simple configuration, an optical circulator may also be used. Also, the incidence of signal light,
Although the extraction is simply indicated by an arrow in the drawing, it goes without saying that a waveguide structure may also be used.
今周期構造Δのグレーティングが長さ!ある場合の最大
反射率賜、中心波長λい波長幅Δλは各各板下のように
表わされる。The grating of periodic structure Δ is now long! In a certain case, the maximum reflectance, the center wavelength λ, and the wavelength width Δλ are expressed as shown below for each plate.
nM= tanh (Kl ) (1)λo= 2N−
A (2)
ただし、Kは結合係数、Nは導波路の等側屈折率、Ng
roupは等側群屈折率でほぼNに等しい。nM = tanh (Kl) (1) λo = 2N-
A (2) However, K is the coupling coefficient, N is the isolateral refractive index of the waveguide, and Ng
roup is an isolateral group refractive index and is approximately equal to N.
第2図は(1) 、 (2) 、 (3)式で表される
RM、λ0.Δλを説明する反射率の波長依存性を示し
たものである。例としてλO=1.5μm 、 A =
0.214 JimのGaAtAs/GaAs系材料
で構成した場合にtiRM≧0.4.Δλ≦IOXの特
性が容易に得られる。このpn接合導波路に注入電流を
順方向に流した場合にはキャリアによる電子、正孔の反
転分布が形成され導波路1は利得媒質となる。したがっ
て注入電流を発振閾値以下に保った状態でλ1.λ2・
・・λ0.・・・λnの信号光が入射した場合にはλ。FIG. 2 shows the RM, λ0. expressed by equations (1), (2), and (3). It shows the wavelength dependence of reflectance explaining Δλ. For example, λO=1.5μm, A=
0.214 When composed of Jim's GaAtAs/GaAs material, tiRM≧0.4. The characteristic of Δλ≦IOX can be easily obtained. When an injection current flows in the forward direction through this pn junction waveguide, an inverted distribution of electrons and holes due to carriers is formed, and the waveguide 1 becomes a gain medium. Therefore, when the injection current is kept below the oscillation threshold, λ1. λ2・
...λ0. ...If the signal light of λn is incident, then λ.
のみが増幅されて反射され、他の波長の信号光はグレー
ティング周期の位相と波長の位相が合わない為通過する
。反射されたλ0の信号光はビームスプリッタ4によっ
て出射され分波することができる。なお注入電流を変化
させるとキャリアによる屈折率変化が生じ(2)式によ
って中心波長も変化させることができる。またpn接合
導波路の入射面で反射があるとビームスノリツタ4から
出射する信号光にλ。以外の波長光がもれてくるため反
射防止膜を施すことが望ましい。Only the signal light of the wavelength is amplified and reflected, and the signal light of other wavelengths is passed because the phase of the grating period and the wavelength do not match. The reflected signal light of λ0 can be emitted and split by the beam splitter 4. Note that when the injection current is changed, the refractive index changes due to carriers, and the center wavelength can also be changed using equation (2). In addition, if there is reflection at the incident surface of the pn junction waveguide, the signal light emitted from the beam snoritzer 4 will have a wavelength of λ. It is desirable to apply an anti-reflection coating to prevent light of other wavelengths from leaking.
これらの構造は半導体プロセス技術によって集積化する
ことができることは言うまでもない。Needless to say, these structures can be integrated using semiconductor process technology.
(発明の効果)
以上説明したように電流を発振閾値以下に注入したpn
接合導波路によるグレーティングを用いて分波するため
以下のような利点がある。(Effect of the invention) As explained above, the pn in which the current is injected below the oscillation threshold
Demultiplexing using a grating with a junction waveguide has the following advantages.
(1)利得′があるため挿入損失なしで分波、さらには
増幅することができる。(1) Since there is a gain ', it is possible to perform demultiplexing and further amplification without insertion loss.
(2)非常に鋭い波長選択性を得ることができる。(2) Very sharp wavelength selectivity can be obtained.
(3)注入電流をオン、オフすることによってスイジチ
機能を持つ。(3) It has a switching function by turning the injection current on and off.
(4) pn接合導波路の端子電圧変化によって選択し
た信号波長光のモニタが可能。(4) It is possible to monitor the selected signal wavelength light by changing the terminal voltage of the pn junction waveguide.
(5)長寿命である。(5) Long life.
(6)大量生産が可能な為安価である。(6) It is inexpensive because it can be mass-produced.
(7)小型集積化が可能である。(7) Compact integration is possible.
$1図は本発明の一実施例の構成−図、抛2図は反射率
の波長依存性を示した図である。
1・・・pn接合で構成される導波路で周期Δのグレー
ティングが形成されている、2,3・・・導波路1のク
ラツディング、4・・・ビームスシリツタ。
第1図
第2図Figure 1 is a diagram showing the configuration of an embodiment of the present invention, and Figure 2 is a diagram showing the wavelength dependence of reflectance. 1... A waveguide composed of a pn junction in which a grating with a period Δ is formed, 2, 3... Cladding of the waveguide 1, 4... Beam silicate. Figure 1 Figure 2
Claims (1)
択して取出す光分波器において、入射信号光を受容する
ビームスプリッタと、その後に配置されるA=λo/2
N(ただしNは等側屈折率)の周期構造を持つpn接合
導波路を有し、該pn接合導波路に発振閾値以下の電流
を注入して分波中心波長λ0を制御することを特徴とす
る光分波器。In an optical demultiplexer that selects and extracts light λ0 of a specific wavelength from input signal light containing a plurality of wavelengths, there is a beam splitter that receives the input signal light, and A=λo/2 disposed after the beam splitter.
It is characterized by having a pn junction waveguide having a periodic structure of N (where N is an equal refractive index), and controlling the demultiplexing center wavelength λ0 by injecting a current below the oscillation threshold into the pn junction waveguide. optical demultiplexer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59029568A JPS60175025A (en) | 1984-02-21 | 1984-02-21 | Optical demultiplexer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59029568A JPS60175025A (en) | 1984-02-21 | 1984-02-21 | Optical demultiplexer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60175025A true JPS60175025A (en) | 1985-09-09 |
Family
ID=12279726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59029568A Pending JPS60175025A (en) | 1984-02-21 | 1984-02-21 | Optical demultiplexer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60175025A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01267610A (en) * | 1988-04-20 | 1989-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Optical switch |
JPH024209A (en) * | 1988-06-21 | 1990-01-09 | Matsushita Electric Ind Co Ltd | Waveguide and photodetector |
JPH0263012A (en) * | 1988-03-25 | 1990-03-02 | American Teleph & Telegr Co <Att> | Optical device |
EP0782290A2 (en) | 1990-01-19 | 1997-07-02 | Canon Kabushiki Kaisha | Optical communication method and optical communication system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5452562A (en) * | 1977-10-03 | 1979-04-25 | Mitsubishi Electric Corp | Variable wavelength selection filter |
JPS5740207A (en) * | 1980-08-25 | 1982-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Optical fiber dispersion/delay equalizer and its production |
-
1984
- 1984-02-21 JP JP59029568A patent/JPS60175025A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5452562A (en) * | 1977-10-03 | 1979-04-25 | Mitsubishi Electric Corp | Variable wavelength selection filter |
JPS5740207A (en) * | 1980-08-25 | 1982-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Optical fiber dispersion/delay equalizer and its production |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0263012A (en) * | 1988-03-25 | 1990-03-02 | American Teleph & Telegr Co <Att> | Optical device |
JPH01267610A (en) * | 1988-04-20 | 1989-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Optical switch |
JPH024209A (en) * | 1988-06-21 | 1990-01-09 | Matsushita Electric Ind Co Ltd | Waveguide and photodetector |
EP0782290A2 (en) | 1990-01-19 | 1997-07-02 | Canon Kabushiki Kaisha | Optical communication method and optical communication system |
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