JPS6017254B2 - Photoelectric detection device - Google Patents

Photoelectric detection device

Info

Publication number
JPS6017254B2
JPS6017254B2 JP54148516A JP14851679A JPS6017254B2 JP S6017254 B2 JPS6017254 B2 JP S6017254B2 JP 54148516 A JP54148516 A JP 54148516A JP 14851679 A JP14851679 A JP 14851679A JP S6017254 B2 JPS6017254 B2 JP S6017254B2
Authority
JP
Japan
Prior art keywords
circuit
output
level
light
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54148516A
Other languages
Japanese (ja)
Other versions
JPS5671331A (en
Inventor
有貴 依藤
誠一 宇山
勝彦 福武
正治 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP54148516A priority Critical patent/JPS6017254B2/en
Publication of JPS5671331A publication Critical patent/JPS5671331A/en
Publication of JPS6017254B2 publication Critical patent/JPS6017254B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding

Landscapes

  • Electronic Switches (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Manipulation Of Pulses (AREA)

Description

【発明の詳細な説明】 本発明は光電検出装置に関するものである。[Detailed description of the invention] The present invention relates to a photoelectric detection device.

従来の第1図に示すこの種の光電検出装置は発光器1と
受光器2との離間距離の設定の違いや、受光信号の大小
、受光器1の受光回路3に用いるホトトランジスタのよ
うな受光素子の応答速度の関係で、第2図aに示すよう
に発光器1から発光される変調光の信号(発振回路4の
発振パルス)と、受光回路3の受光素子と増中器5とを
介してレベル弁別回路6を通過する第2図bに示す受光
信号とを比較すると、弁別レベルLが高い場合のときに
は変調光の信号のデュティー内にレベル弁別回路6の出
力が入ってしまうという問題があった。即ち変調光の信
号の立下がり時toより△tだけ早く第2図cに示すよ
うにレベル弁別回路6の出力が立下がるため、次段のフ
リッブフロップFFをレベル弁別回路6出力でセットす
ることができない場合が生ずるときう問題があった。本
発明は、上述の問題点に鑑みて為したもので、その目的
とするところは信号処理を行なうためのフリツプフロツ
プのセットを確実に行なうことができて、フリップフロ
ツブによりレベル弁別回路の出力の波形引き延ばしがで
きる光電検出装置を提供するにある。以下本発明を実施
例によって説明する。
The conventional photoelectric detection device of this type shown in FIG. Due to the response speed of the light receiving element, as shown in FIG. Comparing the received light signal shown in FIG. 2B which passes through the level discrimination circuit 6 via There was a problem. That is, as shown in FIG. 2c, the output of the level discrimination circuit 6 falls earlier by Δt than the falling edge of the modulated light signal to, so the next-stage flip-flop FF is set by the output of the level discrimination circuit 6. There was a problem when there were cases where this was not possible. The present invention has been made in view of the above-mentioned problems, and its purpose is to be able to reliably set flip-flops for signal processing, and to use the flip-flops to control the output of a level discrimination circuit. An object of the present invention is to provide a photoelectric detection device capable of enlarging a waveform. The present invention will be explained below with reference to Examples.

第3図は本発明の一実施例の回路を示し、受光器2はホ
トトランジスタのような受光素子からなる受光回路3と
、この受光回路3の出力を入力して増中する増中器5と
、この増中器5より出力する増中受信々号のレベルを弁
別して所定レベルのパルス信号に波形整形するレベル弁
別回路6と、このレベル弁別回路6の出力によってセッ
テトされ、出力を一定時間引き延ばしするフリツプフロ
ツプFFと、フリツブフロツプFFの出力を入力して積
分する積分回路7と、積分回路7の積分出力を所定レベ
ルで波形整形して次段の出力回路9を作動させる波形整
形回路8と、前記出力回路9とから構成せられたもので
ある。
FIG. 3 shows a circuit according to an embodiment of the present invention, in which the light receiver 2 includes a light receiving circuit 3 consisting of a light receiving element such as a phototransistor, and an intensifier 5 which inputs the output of this light receiving circuit 3 and increases the intensity. and a level discrimination circuit 6 which discriminates the level of the intensified reception signal outputted from this intensifier 5 and shapes the waveform into a pulse signal of a predetermined level, and is set by the output of this level discrimination circuit 6, and the output is set for a certain period of time. A flip-flop FF that stretches, an integrating circuit 7 that inputs and integrates the output of the flip-flop FF, and a waveform shaping circuit 8 that shapes the integrated output of the integrating circuit 7 to a predetermined level and operates the output circuit 9 at the next stage. The output circuit 9 is composed of the output circuit 9 described above.

一方発光器2は所定周波数のパルス信号を発振出力して
て、発振パルス信号によって、前記フリップフロツプF
Fをリセットするとともに、発光素子からなる発光回路
10を駆動する発振回路4と、この発振回路4の発振パ
ルス信号にて変調されて変調光を投光する発光回路10
とから構成せられたものである。受光回路3並びに発光
回路1川ま投光式であれば対置され、反射式であれば並
置される。ところで本発明の光電検出装置の主要構成で
あるレベル弁別回路6は高めの第1レベルLに設定した
基準電圧を越える受光信号が入力した際に基準電圧を低
めの第2レベルLに降下させる帰還ループをするもので
、例えば第4図に示すような具体回路から構成されてい
る。即ち第5図aに示す発振回路4の発振パルスに対応
して投光された変調光を受光信号が第5図bのような場
合第1レベルL,の基準電圧でレベル検知すると、受,
発光素子の位置関係等でレベル弁別回路6の出力の立下
がりが第5図cのように対応する発振パルスのヂュティ
内に入ってしまって、レベル弁別回路6出力でセットを
かけることができなくなり、出力パルスの一定時間引延
ばしができなくなるわけであるが、レベル弁別回路6を
構成するオベアンプOPの出力が発生すると直ちにトラ
ンジスタTrをオンさせて基準電圧を作るための分圧回
路の抵抗R3をトランジスタTrで短絡し、抵抗R,,
R2で分圧された低い、基準電圧を設定するため検知レ
ベルがL2となり、従ってレベル弁別回路6の出力は第
5図dのように第5図aの発振パルスのデュティを越え
ることとなり、従って次の発振パルスでリセットされる
までフリツプフロツプFFの出力が保持されて出力が一
定時間引き延ばされることになるわけであり、尚フリツ
プフ。ップFFにはリセット優先型のものを勿論使用し
てある。本発明は上述のように構成してあって、レベル
弁別回路の検知レベル設置用の基準電圧を受光信号の入
力時に降下させるので、レベル弁別回路から出力する信
号は対応する発振パルスの立下がりより遅れた部分を持
つこととなって、基準レベルを下げることなく、第2図
に示した小さな信号でも確実にセットさせることができ
、フリツプフロツプによる一定時間の出力引延ばしが確
実になり、従来のように、受光器の離間距離の設定のち
がし・による受光信号レベルの大、4・、ホトトランジ
スタの応答速度の関係で対応発振パルスのデュティ内に
レベル弁別回路の出力が入ってしまうことによる誤動作
がないという効果を奏し、しかも基準レベルを下げる必
要がないから外光ノイズ等の影響を受けることがないと
いう効果も奏する。
On the other hand, the light emitter 2 oscillates and outputs a pulse signal of a predetermined frequency, and the oscillation pulse signal causes the flip-flop F
an oscillation circuit 4 that resets F and drives a light-emitting circuit 10 made up of light-emitting elements; and a light-emitting circuit 10 that emits modulated light that is modulated by the oscillation pulse signal of the oscillation circuit 4.
It is composed of. The light-receiving circuit 3 and the light-emitting circuit 1 are placed opposite each other if they are of a projecting type, and are placed side by side if they are of a reflective type. By the way, the level discrimination circuit 6, which is the main component of the photoelectric detection device of the present invention, has a feedback circuit that lowers the reference voltage to a lower second level L when a received light signal that exceeds the reference voltage set at a higher first level L is input. It forms a loop and is composed of a specific circuit as shown in FIG. 4, for example. That is, when the level of the modulated light projected in response to the oscillation pulse of the oscillation circuit 4 shown in FIG. 5a is detected with the reference voltage of the first level L when the received light signal is as shown in FIG. 5b, the received,
Due to the positional relationship of the light emitting elements, etc., the fall of the output of the level discrimination circuit 6 falls within the duty of the corresponding oscillation pulse as shown in Figure 5c, and it becomes impossible to set the output of the level discrimination circuit 6. , it becomes impossible to extend the output pulse for a certain period of time, but as soon as the output of the amplifier OP that constitutes the level discrimination circuit 6 is generated, the transistor Tr is turned on and the resistor R3 of the voltage divider circuit for creating the reference voltage is turned on. Short-circuited by transistor Tr, resistor R,,
Since the low reference voltage divided by R2 is set, the detection level becomes L2, so the output of the level discrimination circuit 6 exceeds the duty of the oscillation pulse in FIG. 5a, as shown in FIG. 5d, and therefore The output of the flip-flop FF is held until it is reset by the next oscillation pulse, and the output is extended for a certain period of time. Of course, a reset-priority type FF is used as the chip FF. The present invention is configured as described above, and since the reference voltage for setting the detection level of the level discrimination circuit is lowered when the received light signal is input, the signal output from the level discrimination circuit is lower than the falling edge of the corresponding oscillation pulse. By having a delayed part, even the small signal shown in Figure 2 can be set reliably without lowering the reference level, and the output can be stretched for a certain period of time using a flip-flop, making it possible to set the signal without lowering the reference level. 4) The level of the received light signal is large due to a difference in the setting of the separation distance of the photoreceiver, and 4) Malfunction due to the output of the level discrimination circuit falling within the duty of the corresponding oscillation pulse due to the response speed of the phototransistor. Furthermore, since there is no need to lower the reference level, there is no need to lower the reference level, so there is also an effect that there is no influence from outside light noise.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従釆例の主要部分の回路ブロック図、第2図a
,b,cは同上の動作説明用のタイムチャート、第3図
は本発明の一実施例の回路ブロック図、第4図は同上の
主要部分の回路図、第5図a〜dは同上の動作説明図の
タイムチャートであり、1は発光器、2は受光器、3は
受光回路、4は発振回路、6はしベル弁別回路、9は出
力回路、1川ま発光回路、FFはフリツプフロツプであ
る。 第1図 第2図 第3図 第4図 第5図
Figure 1 is a circuit block diagram of the main parts of the subordinate example, Figure 2a
, b, c are time charts for explaining the operation of the same as above, FIG. 3 is a circuit block diagram of an embodiment of the present invention, FIG. 4 is a circuit diagram of the main parts of the same as above, and FIGS. This is a time chart for explaining the operation. 1 is a light emitter, 2 is a light receiver, 3 is a light receiving circuit, 4 is an oscillation circuit, 6 is a bell discrimination circuit, 9 is an output circuit, 1 is a light emitting circuit, and FF is a flip-flop. It is. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】[Claims] 1 発振回路の発振パルス出力でパルス変調された発光
器の発光回路の変調光を投光し、受光器側の受光回路に
よりこの変調光を受光してこの受光信号をレベル弁別回
路でレベル弁別し、レベル弁別回路の出力をセツト信号
とするとともに前記発振回路の発振パルス出力をリセツ
ト信号として入力するリセツト優先のフリツプフロツプ
でレベル弁別回路の出力を一定時間引延ばしてこの引延
ばし信号により上記変調光受光の遮断又は入光を検知し
、出力回路を作動させる光電検出装置において、レベル
弁別回路の検知出力でオンするスイツチ手段と、該スイ
ツチ手段のオフ時に検知レベル設定用の第1の基準電圧
をレベル弁別回路に与えスイツチ手段のオン時に該基準
電圧より低い第2の基準電圧に切り替えられてレベル弁
別回路に与える基準電圧発生手段と付設したことを特徴
とする光電検出装置。
1 Emit modulated light from the light emitting circuit of the emitter that is pulse-modulated by the oscillation pulse output of the oscillator circuit, receive this modulated light by the light receiving circuit on the receiver side, and discriminate the level of this received light signal by the level discrimination circuit. The output of the level discrimination circuit is used as a set signal and the oscillation pulse output of the oscillation circuit is inputted as a reset signal.The output of the level discrimination circuit is extended for a certain period of time by a reset-priority flip-flop, and this extended signal is used to receive the modulated light. A photoelectric detection device that detects the interruption or entrance of light and activates an output circuit includes a switch means that is turned on by the detection output of a level discrimination circuit, and a first reference voltage for setting a detection level when the switch means is turned off. 1. A photoelectric detection device characterized in that the photoelectric detection device is provided with a reference voltage generating means which is switched to a second reference voltage lower than the reference voltage when the switch means is turned on and is applied to the level discrimination circuit.
JP54148516A 1979-11-15 1979-11-15 Photoelectric detection device Expired JPS6017254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54148516A JPS6017254B2 (en) 1979-11-15 1979-11-15 Photoelectric detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54148516A JPS6017254B2 (en) 1979-11-15 1979-11-15 Photoelectric detection device

Publications (2)

Publication Number Publication Date
JPS5671331A JPS5671331A (en) 1981-06-13
JPS6017254B2 true JPS6017254B2 (en) 1985-05-01

Family

ID=15454511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54148516A Expired JPS6017254B2 (en) 1979-11-15 1979-11-15 Photoelectric detection device

Country Status (1)

Country Link
JP (1) JPS6017254B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH067169B2 (en) * 1985-10-04 1994-01-26 竹中エンジニアリング工業株式会社 Infrared detector

Also Published As

Publication number Publication date
JPS5671331A (en) 1981-06-13

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