JPS60167421A - Rotary wafer holder - Google Patents
Rotary wafer holderInfo
- Publication number
- JPS60167421A JPS60167421A JP2359384A JP2359384A JPS60167421A JP S60167421 A JPS60167421 A JP S60167421A JP 2359384 A JP2359384 A JP 2359384A JP 2359384 A JP2359384 A JP 2359384A JP S60167421 A JPS60167421 A JP S60167421A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- suppressor
- corner
- electron
- electron suppressor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 abstract description 42
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
この発明はイオン注入装置、加速器等に用いるエレクト
ロン・サブレツナ−の近傍に設置する回転式ウェハーホ
ルダーに関し、詳しくはウェハー保持板が円板からなる
回転式ウェハーホルダーに関するものである。[Detailed Description of the Invention] (a) Industrial Application Field This invention relates to a rotary wafer holder installed near an electron subreflector used in an ion implanter, an accelerator, etc. This relates to a rotating wafer holder.
（ロ）従来技術
従来の回転式ウェハーホルダーは、例えば第１〜２図に
示すように、回転軸（１）と、この回転軸を中心として
回転軸（１）と一体に回転する防止６角形の筒体（２）
とを備え、この筒体の胴壁面にそれぞれ円板状のつ■バ
ー＋３］ ＋３）・・・を凸段し、これらのウェハーを
管状のエレクトロン・サプレッサ−（４）のイオンビー
ム出用側開口近傍に、その管軸に直交するように順次移
動させて、各ウェハー＋３１ ＋３１・・・にビーム照
射を行うものである。この際ウェハー（３１＋３）・・
・に当るビーム電流値の測定精度を表わすエレクトロン
・サプレッサー（４）のサブレツザー効宋を良くするた
めに、ウェハｆ３１ （３］・・・を第３図に示すよう
にエレクトロン・サプレッサー（’Ｉ）の前記開口にで
きる限り接近させて、エレクトロン・サプレッサー（４
）通過後の２次電子の逃げ限界角度ａを小さくしている
。(B) Prior art As shown in FIGS. 1 and 2, for example, a conventional rotary wafer holder has a rotating shaft (1) and a hexagonal shape that rotates integrally with the rotating shaft (1) around this rotating shaft. Cylindrical body (2)
A disc-shaped bar +3] +3) is provided on the wall surface of the cylindrical body, and these wafers are connected to the ion beam output side of the tubular electron suppressor (4). Each wafer +31, +31, . . . is irradiated with a beam by sequentially moving near the opening so as to be perpendicular to the tube axis. At this time, wafer (31+3)...
In order to improve the subresor effect of the electron suppressor (4), which represents the measurement accuracy of the beam current value corresponding to . Place the electron suppressor (4) as close as possible to the opening of the
) The escape limit angle a of secondary electrons after passing through is made small.
しかし、この装置において筒体（２）が正６角形である
ため、その角部がエレクトロン・サプレツサ−（４）の
開目端部に当り、従って、通常筒体（２）の回転前に一
旦、エレクトロン・量ナプレッサー（４）を第１図の矢
印のように反部体（２）方向へ移動させて、筒体（２）
との間に筒体（２）の回転スペースを設置ノでいたが、
エレクトロン・サプレッサー（４）が真空中に保持され
ているので、その移＠１１！構が非常に複雑になる欠点
があった。However, in this device, since the cylinder (2) has a regular hexagonal shape, its corner touches the open end of the electron suppressor (4), and therefore, normally, before the cylinder (2) rotates, , move the electron/quantity nappressor (4) toward the opposite body (2) as shown by the arrow in Fig.
I installed a rotation space for the cylinder (2) between the
Since the electron suppressor (4) is kept in a vacuum, its transfer @11! The drawback was that the structure was extremely complex.
（ハ）発明の目的
この発明は以上の事情に鑑みなされたもので、サプレッ
サー効果を良くするために、つ■バーをエレクトロン・
サプレッサーに近づけても、筒体回転時にエレクトロン
・サプレッサーを移動させることなく多数のウェハーに
イオンを順次照射できる回転式ウェハーホルダーを提供
しようとするものである。(c) Purpose of the Invention This invention was made in view of the above circumstances, and in order to improve the suppressor effect, the two bars are
The purpose of the present invention is to provide a rotary wafer holder that can sequentially irradiate a large number of wafers with ions even when the electron suppressor is close to the suppressor while the cylinder rotates.
（ニ）発明の構成
この発明は、同一形状の多数のウェハー保持板と、これ
らのウェハー保持板を略正多角形簡の各胴壁の位置に並
ぶように支持する支持体と、この支持体を回転させる前
記筒の軸と同軸の回転軸とを備え、前記ウェハ保持板が
円板からなると共に、これら円板における回転軸と直交
する直径の両端が前記筒の各角部に位置してなる回転式
ウェハーホルダーである。(D) Structure of the Invention The present invention comprises a large number of wafer holding plates having the same shape, a support body that supports these wafer holding plates so as to be lined up at the positions of each body wall of a substantially regular polygonal rectangle, and this support body. a rotating shaft coaxial with the axis of the cylinder for rotating the wafer, and the wafer holding plate is composed of a disk, and both ends of the diameter of the disks perpendicular to the rotation axis are located at each corner of the cylinder. This is a rotating wafer holder.
（ホ）実施例
以下図に示す実施例に基づいてこの発明を詳述する。な
お、これによってこの発明は限定されるものではない。(e) Examples The present invention will be described in detail below based on examples shown in the drawings. Note that this invention is not limited by this.
第４〜５図に回転式ウェハーホルダー（５）の全体構成
を示す。4 and 5 show the overall structure of the rotary wafer holder (5).
（６）は回転軸、（７１（７］・・・はウェハー０２）
保持開口を有する６枚のウェハー保持円板である。（８
）は、これらのウェハー保持円板が正６角形筒（以下筒
体（１０）と称す）の各胴壁の位置に並ぶように支持す
る支持体で、回転軸（６）の上部及び上部から放射状に
延びる１２本の支持棒（９１（９）・・・からなる。ウ
ェハー保持円板（力・・・における回転軸（６）と直交
する直径の両端が筒体（１０）の６つの角部ｆ１３）
（１３１・・・を形成している。(6) is the rotation axis, (71 (7)... is wafer 02)
Six wafer holding disks with holding apertures. (8
) is a support body that supports these wafer holding disks so that they are lined up at the positions of each body wall of a regular hexagonal cylinder (hereinafter referred to as cylinder body (10)). Consisting of 12 radially extending support rods (91 (9)...). Both ends of the diameter perpendicular to the rotation axis (6) in the wafer holding disk (force...) are the six corners of the cylinder (10). Part f13)
(131... is formed.
また、ウェハー保持円板（力（７）・・・・・・は、そ
の各ウェハー０２） （１２１・・・が固定型のエレク
１ヘロン・ザプレツ３−
ザー（１１）の管軸に直交し、かつそのイオンビーム出
射側開口端から第４図のｂ間隙、例えば１〜ｂだけ離れ
るように回転軸（６）によって固定されている。In addition, the wafer holding disk (force (7)... is each wafer 02) (121... is perpendicular to the tube axis of the fixed type Elek1 Heron Zaprez 3-zer (11) , and is fixed by a rotating shaft (6) so as to be spaced from the opening end on the ion beam exit side by a gap b in FIG. 4, for example, 1 to b.
ここで各部の寸法及び材質について説明する。Here, the dimensions and materials of each part will be explained.
（ａ ）支持体の材質 アルミニウム、ステンレス等の
金属
（ｂ ）ウェハー保持円板の材質 タンタル、ステンレ
ス鋼等
（Ｃ）ウェハーの肉厚０．４〜０．５５ ｍ１ｌｌ（ｄ
）エレクトロン・サプレッサーの内径１２７〜１２８
ｍｍφ
（ｅ ）ウェハー保持円板の外径１１９〜１２０ｍｍφ
次に以上の構成からなる回転式ウェハーホルダー（５）
の作動について説明する。(a) Material of support: Metal such as aluminum, stainless steel, etc. (b) Material of wafer holding disk: Tantalum, stainless steel, etc. (C) Wafer thickness: 0.4 to 0.55 ml (d)
) Electron suppressor inner diameter 127-128
mmφ (e) Outer diameter of wafer holding disk 119-120mmφ
Next, a rotary wafer holder (5) consisting of the above configuration
The operation of this will be explained.
まず、１枚のウェハー０２）へのビーム照射が終り、次
のウェハーにビーム照射するために、筒体００）を回転
させると、その角部０３）は、第６図に示すように当初
エレクトロン・サプレッサー（１１）の管軸を通る水平
面と交わる端部と１〜３ｍｌの間隙（Ｃ）を４−
形成してエレク１ヘロン・サプレッサー（１１）の管軸
方向に進む。そして各部０３）は、縦方向の長さがゼロ
であり、その上下部は管外に向かってその縦方向の長さ
が次第に長くなる円曲線を描いているため、筒体（１０
）は、その角部０３）の上下部がエレク１ヘロン・サプ
レツ号−曲開ロ端部の上下面にそれぞれ当ることなく、
角部は第６図に示すＪ：うにエレクトロン・サプレッサ
−（１１）内に最大（ｄｍａｘ） １１〜１２＋＋＋ｍ
入り込み、その進入側と対向する端部から出て、ウェハ
ー面０２）をエレクトロン・サプレッサー曲の管軸に直
交させた位置で停止する。この際、ウェハー保持円板（
７）のエレクトロン・サプレッサー（１１）端部の垂直
方向の長さは、第７図に示すように角部０３）の入り込
みｆｆ１ｄに対応して増減する曲線を描くが、ウェハー
保持円板（力面がエレクトロン・サブレツナ−曲の端面
に対して６０°で入りＯｏになるまで回転するため、そ
の最大値は第８図に示すようにエレクトロン・サプレッ
サー（１１）の管軸付近で前記ｄｍａｘの約３倍に対応
する長さρ、例えば１１２〜１１５１＋１１になる。す
なわち、このΩよりエレクトロン・リープレツザ−（１
１）の内径が若干大ぎいため、エレクトロン・サプレッ
サー（１１）を移動させることなく、筒体（ＩＱ）が回
転する。そしてウェハー（Ｉ２）にビーム照射後、筒体
的）を回転させて、順次ウェハー０２１０２］・・・に
ビーム照射を行う。First, when the beam irradiation to one wafer 02) is completed and the cylinder body 00) is rotated in order to irradiate the next wafer with the beam, its corner 03) is initially exposed to electrons as shown in FIG. - Form a gap (C) of 1 to 3 ml with the end that intersects with the horizontal plane passing through the tube axis of the suppressor (11), and proceed in the tube axis direction of the Elec 1 Heron suppressor (11). Each part 03) has a length of zero in the vertical direction, and its upper and lower parts draw a circular curve whose vertical length gradually increases toward the outside of the tube.
), the upper and lower corners of corner 03) do not touch the upper and lower surfaces of the curved open bottom end, respectively.
The corner part is shown in Figure 6 J: Uni Electron Suppressor (11) Maximum (dmax) 11~12+++m
It enters, exits from the end opposite to its entry side, and stops at a position where the wafer surface 02) is perpendicular to the tube axis of the electron suppressor song. At this time, the wafer holding disk (
The vertical length of the end of the electron suppressor (11) of 7) draws a curve that increases or decreases in response to the penetration ff1d of the corner 03) as shown in FIG. Since the surface enters at 60 degrees with respect to the end surface of the electron subretsuner curve and rotates until Oo, the maximum value is approximately dmax near the tube axis of the electron suppressor (11) as shown in Figure 8. The length ρ corresponding to 3 times, for example, 112 to 1151 + 11. That is, from this Ω, the electron reaprezer (1
Since the inner diameter of 1) is slightly large, the cylinder (IQ) can be rotated without moving the electron suppressor (11). After the wafer (I2) is irradiated with the beam, the cylindrical body is rotated and the wafers 02102], . . . are sequentially irradiated with the beam.
以上のごとく回転式ウェハーホルダー（５）を構成づ−
ることによって、以下の効果を挙げることができる。The rotary wafer holder (5) is constructed as described above.
By doing so, the following effects can be achieved.
（ａ）−ｒレフ１ヘロン・サプレッサーの移動機構が不
要となる。(a) A moving mechanism for the -r reflex 1 Heron suppressor is not required.
（ｂ）イオン注入装置、加速器などの機器の取扱いが簡
単になる。(b) It becomes easier to handle equipment such as ion implanters and accelerators.
（Ｃ）それらの機器の真空容器内のスペースが他の目的
に使用できる。(C) Space within the vacuum vessels of those devices can be used for other purposes.
（ｄ ）その真空容器の真空度の向上が期待できる。(d) An improvement in the degree of vacuum of the vacuum container can be expected.
（ｅ）前記機器の価格を低下させることができる。(e) The price of the equipment can be reduced.
（へ）発明の効果
この発明は、多数の１クエハー保持板が円板からなると
共に、これらの円板における回転軸と直交する直径の両
端が略正多角形筒の各角部を形成することによって、イ
オン注入装訪、加速器等に用いるエレクトロン・サプレ
ッサーを移動させることなく、そのイオンビーム出射側
開口端面と各ウェハー面との距離を極めて小さくするこ
とができ、それによってサプレッサー効果を良くするこ
とができるにうにするものである。(f) Effects of the Invention The present invention is characterized in that a large number of one-quafer holding plates are composed of disks, and both ends of the diameters of these disks perpendicular to the rotational axis form each corner of a substantially regular polygonal cylinder. This makes it possible to extremely reduce the distance between the ion beam exit side opening end face and each wafer surface without moving the electron suppressor used in ion implantation equipment, accelerators, etc., thereby improving the suppressor effect. This is to make it possible for you to do so.
第１図は従来の回転式ウェハーホルダーの平面図、第２
図はこの側面図、第３図はこの逃げ限界角度説明図、第
４図はこの発明に係る回転式ウェハーホルダの一実施例
を示す平面図、第５図はこの側面図、第６図はこの筒体
の角部の入り込み軌跡図、第７〜８図はこの垂直方向の
入り込み長さを説明する説明図である。
（５）・・・・・・回転式ウェハーホルダー、（６）・
・・・・・回転軸、（力・・・・・・ウェハー保持円板
、（８）・・・・・・支持体、（１ｏ）・・・・・・筒
体、０３）・・・・・・角部。
第７図
第８図Figure 1 is a plan view of a conventional rotary wafer holder;
3 is a diagram illustrating the escape limit angle, FIG. 4 is a plan view showing an embodiment of the rotary wafer holder according to the present invention, FIG. 5 is a side view of the rotary wafer holder, and FIG. FIGS. 7 and 8, which are diagrams showing the penetration locus of the corners of the cylinder, are explanatory views for explaining the penetration length in the vertical direction. (5)... Rotating wafer holder, (6)...
...rotation shaft, (force ... wafer holding disk, (8) ... support body, (1o) ... cylinder, 03) ... ...corner. Figure 7 Figure 8
Claims (1)
ハー保持板を略正多角形筒の各胴壁の位置に並ぶように
支持する支持体と、この支持体を回転させる前記筒の軸
と同軸の回転軸とを備え、前記ウェハ保持板が円板から
なると共に、これら円板における回転軸と直交する直径
の両端が前記筒の各角部に位置しでなる回転式ウェハー
ホルダー。1. A large number of wafer holding plates having the same shape, a support body that supports these wafer holding plates so as to be aligned with each body wall of a substantially regular polygonal cylinder, and an axis of the cylinder that rotates this support body. A rotary wafer holder comprising a coaxial rotating shaft, the wafer holding plate being a disk, and both ends of the disk having a diameter perpendicular to the rotating shaft being located at each corner of the tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2359384A JPS60167421A (en) | 1984-02-10 | 1984-02-10 | Rotary wafer holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2359384A JPS60167421A (en) | 1984-02-10 | 1984-02-10 | Rotary wafer holder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60167421A true JPS60167421A (en) | 1985-08-30 |
| JPH0351092B2 JPH0351092B2 (en) | 1991-08-05 |
Family
ID=12114878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2359384A Granted JPS60167421A (en) | 1984-02-10 | 1984-02-10 | Rotary wafer holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60167421A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015043272A (en) * | 2013-08-26 | 2015-03-05 | 株式会社アルバック | Ion implantation equipment |
-
1984
- 1984-02-10 JP JP2359384A patent/JPS60167421A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015043272A (en) * | 2013-08-26 | 2015-03-05 | 株式会社アルバック | Ion implantation equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351092B2 (en) | 1991-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |