JPS60167192A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPS60167192A JPS60167192A JP60008736A JP873685A JPS60167192A JP S60167192 A JPS60167192 A JP S60167192A JP 60008736 A JP60008736 A JP 60008736A JP 873685 A JP873685 A JP 873685A JP S60167192 A JPS60167192 A JP S60167192A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- output
- level
- circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000007257 malfunction Effects 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000003111 delayed effect Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 3
- 241000152447 Hades Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60008736A JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60008736A JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8242180A Division JPS578988A (en) | 1980-06-18 | 1980-06-18 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60167192A true JPS60167192A (ja) | 1985-08-30 |
JPH0135438B2 JPH0135438B2 (enrdf_load_stackoverflow) | 1989-07-25 |
Family
ID=11701235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60008736A Granted JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60167192A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222486A (ja) * | 1986-02-14 | 1987-09-30 | Fujitsu Ltd | メモリ・周辺回路接続方式 |
JPS6381551A (ja) * | 1986-09-25 | 1988-04-12 | Sony Corp | メモリ装置 |
JPH03194794A (ja) * | 1989-12-25 | 1991-08-26 | Sharp Corp | 半導体記憶装置 |
-
1985
- 1985-01-21 JP JP60008736A patent/JPS60167192A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222486A (ja) * | 1986-02-14 | 1987-09-30 | Fujitsu Ltd | メモリ・周辺回路接続方式 |
JPS6381551A (ja) * | 1986-09-25 | 1988-04-12 | Sony Corp | メモリ装置 |
JPH03194794A (ja) * | 1989-12-25 | 1991-08-26 | Sharp Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0135438B2 (enrdf_load_stackoverflow) | 1989-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4744063A (en) | Static memory utilizing transition detectors to reduce power consumption | |
US4417328A (en) | Random access semiconductor memory device using MOS transistors | |
US5239502A (en) | Bit storage cell | |
KR930008640B1 (ko) | 비휘발성 메모리용 감지 증폭기 | |
US4766572A (en) | Semiconductor memory having a bypassable data output latch | |
US5243573A (en) | Sense amplifier for nonvolatile semiconductor storage devices | |
US4894803A (en) | Memory circuit with improved data output control | |
EP0090590A2 (en) | Semiconductor memory device | |
US4563754A (en) | Static-type random-access memory device | |
EP0083482A1 (en) | Improvements in logic circuit operation speed | |
CA1167962A (en) | Row driver circuit for semiconductor memory | |
EP0074206B1 (en) | Semiconductor memory device | |
JPH01119982A (ja) | スタティック型ランダムアクセスメモリ | |
EP0087755B1 (en) | Semiconductor circuit provided with static bootstrap circuit | |
JPS6118836B2 (enrdf_load_stackoverflow) | ||
JPS60167192A (ja) | 半導体メモリ | |
US4573145A (en) | Signal transmitting circuit | |
US5687127A (en) | Sense amplifier of semiconductor memory having an increased reading speed | |
US6597201B1 (en) | Dynamic predecoder circuitry for memory circuits | |
JP2580086B2 (ja) | スタテイック型半導体記憶装置 | |
JPH11306761A (ja) | データ入出力回路、半導体記憶装置および情報処理装置 | |
US6101134A (en) | Method and circuitry for writing data | |
EP0188769A2 (en) | Dynamic type semiconductor memory device | |
JPS6387692A (ja) | 半導体メモリ | |
US4484311A (en) | Synchronous sense amplifier |