JPS60157269A - Gaas solar cell and manufacture thereof - Google Patents
Gaas solar cell and manufacture thereofInfo
- Publication number
- JPS60157269A JPS60157269A JP59012557A JP1255784A JPS60157269A JP S60157269 A JPS60157269 A JP S60157269A JP 59012557 A JP59012557 A JP 59012557A JP 1255784 A JP1255784 A JP 1255784A JP S60157269 A JPS60157269 A JP S60157269A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- conductivity type
- nitride
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 6
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 4
- -1 nitrogen ions Chemical class 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
ｊ（７）発ｑｉＡ／ＧａＡｓの窓層を持つヘテロフェイ
ス形ＧａＡｓ太陽電池およびその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a heteroface type GaAs solar cell having a window layer of j(7) qiA/GaAs and a method for manufacturing the same.
従来、この種のＧａＡｓ太陽電池（１１）は第１図に示
すような断面構成であった。第１図傾おいて、（１）は
ｎ形ＧａＡｓ基板、（２）はこのｎ形ＧａＡｓ基板（１
）上に形成されたＰ形ＧａＡｅ層でこれらＫよりｐｎ接
合（３）が形成される。（４）はｐ形ＧａＡｓ層（２）
上に形成されたｐ形ＡｊｘＧａｌ−ｘＡｓ層て表面での
少数キャリヤの再結合損失を低減するために形成されて
いる。Conventionally, this type of GaAs solar cell (11) has had a cross-sectional configuration as shown in FIG. In Figure 1, (1) is an n-type GaAs substrate, (2) is this n-type GaAs substrate (1).
) A pn junction (3) is formed from these K in the P-type GaAe layer formed on the top. (4) is a p-type GaAs layer (2)
The p-type AjxGal-xAs layer formed thereon is formed to reduce recombination loss of minority carriers at the surface.
また（７） Ｉ−ｉ反射防止膜で、ｐ形Ａ／ｘＧａｘ−
ｘＡ８層（４）の表面に形成されている。さらに外部に
電気的出力を取シ出すためＫｐ形電極（６）およびｎ形
電極（５）が形成されている。このような構造のＧａＡ
ｓ太陽電池（１１）においては、光キャリヤを発生する
ことのできる有効受光領域は主としてｐ形ＧａＡｓ層（
２）である。Ｐ形ＧａＡｓ層（２）に入射する光の量を
多くするために、すなわちｐ形Ａ／ｘＧａｌ−ＸＡＢ層
（４）内での光吸収損失を少なくするために、ｐ形Ａ１
．ｘＧａｌ−ｘＡＢ層（４）のＡＩ濃度Ｘは０．８以上
と高く設定される。このようにＡＩ濃度Ｘが高くなると
、ＡｌｃＧａｌ−ｘＡｅ層（４） Ｆｉ化学的に活性と
なる。一方反射防止膜（７）の材料としては、屈折率が
１．９＠度の８１０やｓｔｓｍ４および屈折率が２．１
程度のＴａ２０５などがある。太陽電池を表面コーテイ
ング材を用いないで使用する場合は、ＳｉＯやＳｉ３Ｎ
４など屈折率が１．９程度の反射防止膜材料を用いた方
が太陽光の変換効率は高くなる。しかしながら、実用的
には太陽電池表面には屈折率が１．４〜１．５程度の樹
脂またはガラスなどてコーティングされるのが通常であ
る。この場合には、理論的には２．３〜２．４程度の高
い屈折率の反射防止膜材料を用いると変換効率は最大と
なる。In addition, (7) I-i anti-reflection film, p-type A/xGax-
It is formed on the surface of the xA8 layer (4). Furthermore, a Kp type electrode (6) and an n type electrode (5) are formed to extract electrical output to the outside. GaA with this structure
In the solar cell (11), the effective light-receiving area that can generate optical carriers is mainly the p-type GaAs layer (
2). In order to increase the amount of light incident on the p-type GaAs layer (2), that is, to reduce the light absorption loss within the p-type A/xGal-XAB layer (4), the p-type A1
．． The AI concentration X of the xGal-xAB layer (4) is set as high as 0.8 or more. When the AI concentration X increases in this way, the AlcGal-xAe layer (4) becomes chemically active. On the other hand, materials for the anti-reflection film (7) include 810 and stsm4 with a refractive index of 1.9@degrees, and materials with a refractive index of 2.1 degrees.
There are Ta205 and the like. When using solar cells without surface coating materials, SiO or Si3N
Using an antireflection film material such as No. 4 with a refractive index of about 1.9 will increase the conversion efficiency of sunlight. However, in practice, the surface of the solar cell is usually coated with a resin or glass having a refractive index of about 1.4 to 1.5. In this case, the conversion efficiency is theoretically maximized by using an antireflection film material with a high refractive index of about 2.3 to 2.4.
したがって８１０やＳｉ３Ｎ４より屈折率が高いＴａ２
０５を用いた方が実用構造の太陽電池で高い変換効率が
得られる。Therefore, Ta2 has a higher refractive index than 810 or Si3N4.
By using 05, higher conversion efficiency can be obtained in a solar cell with a practical structure.
太陽電池として妄求される事柄は、高変換効率 “であ
ると七に加えて、長年使用されるため高信頼性を有する
仁とである。したがって種々の耐環境性試験が実施され
るが、上述の如き従来のＧａＡ３太陽、電池では耐湿性
試験において不具合が見られることかあった。すなわち
、温度６５℃、相対温度９０チ以上の雰囲気で５００時
間程度保存することにより表面変質が観察され、変換効
率が初期値に比して減少してしまった。この表面変換は
、化学的に活性なＡｊＧａＡａ 層に起因している。さ
らに反射防止膜材料のＴａ２０６膜中に残留酸素分子が
存在しており、これがＡｆＧａＡｓ 層の変質を加速し
ているものと推定される。In addition to high conversion efficiency, solar cells are required to have high reliability because they can be used for many years.Therefore, various environmental resistance tests are conducted, but the above-mentioned In conventional GaA3 solar cells and batteries, defects were sometimes observed in moisture resistance tests.In other words, surface deterioration was observed when stored for about 500 hours in an atmosphere with a temperature of 65 degrees Celsius and a relative temperature of 90 degrees Celsius or more. The efficiency has decreased compared to the initial value. This surface transformation is due to the chemically active AjGaAa layer. Furthermore, residual oxygen molecules are present in the Ta206 film of the antireflection coating material. It is presumed that this accelerates the deterioration of the AfGaAs layer.
この発明はこのような点に鑑みてなされたもので、高い
変換効率を有し、しかも耐湿性に優れたＧａＡｓ太陽電
池およびその製造方法を提供するものである。The present invention has been made in view of these points, and it is an object of the present invention to provide a GaAs solar cell having high conversion efficiency and excellent moisture resistance, and a method for manufacturing the same.
［発明の実施例〕
第２図はこの発明の一実施例を示すＧａＡｓ太陽電池の
断面であ、Ｄ 、（１）〜（６）は上記従来の太陽電池
と同一のものである。[Embodiment of the Invention] FIG. 2 is a cross section of a GaAs solar cell showing an embodiment of the present invention, and D and (1) to (6) are the same as those of the conventional solar cell described above.
（８）はＡｆＧａＡｓ の窒化物層であり、ｐ形ＡｌＧ
ａＡｓ層（４）上に設けている。このＡｆＧａＡｓ の
窒化物層（８）の厚みは、太陽光の有効受光波長領域の
光に対して多重反射を生じさせない程度に薄く、例えば
１００λ程度に設定されている。さら忙前記Ａ／ＧａＡ
ｓ の窒化物層（８）の表面には反射防止膜（９）が設
けられる。(8) is a nitride layer of AfGaAs, p-type AlG
It is provided on the aAs layer (4). The thickness of this AfGaAs nitride layer (8) is set to be as thin as, for example, about 100λ, so as not to cause multiple reflections of light in the effective reception wavelength range of sunlight. A/GaA
An anti-reflection coating (9) is provided on the surface of the nitride layer (8).
この友射防止膜（９）の材料として窒化酸化タンタルを
用いる。窒化酸化タンタルの屈折率は２．３５であり、
樹脂やガラスでコーティングする場合の理想的な反射防
止膜材料であると言える。Tantalum nitride oxide is used as the material for this anti-fraction film (9). The refractive index of tantalum nitride oxide is 2.35,
It can be said that it is an ideal anti-reflection coating material when coating with resin or glass.
次に第２図に示すような構造のＧａＡｓ太陽電池の製造
方法について説明する。まず、通常の液相エピタキシャ
ル法によってｐ形ＡｌＧａＡｓ層（４）およびｐ形Ｇａ
Ａｓ層（２）が形成する。この形成されたウェハをター
ゲット電極としてＴａ２０５を備ズーた室内に装填し、
この室内をｌＸｌ０ ’ｔｏｒｒ 程度に排気する。Next, a method for manufacturing a GaAs solar cell having the structure shown in FIG. 2 will be explained. First, a p-type AlGaAs layer (4) and a p-type Ga
An As layer (2) is formed. This formed wafer was loaded into a chamber equipped with Ta205 as a target electrode,
This chamber is evacuated to about 1X10'torr.
次にこの室内にアルゴン（Ａｒ）ガスを流して圧力を３
０ｍｔｏｒｒ ｆｊ度に保ちながら、エピタキシャルウ
ェハに高周波高電圧を印加して、エピタキシャルクモハ
のスパッタエッチを行なう。このスパッタエッチはＡｆ
ＧａＡｓ 層（４）の表面の酸化物などを除去するのに
有効である。次忙スパッタエッチを停止して、室内のア
ルゴン（Ａｒ）ガスを充分拮゛気した後今度は窒素（Ｎ
２）ガスもしくはアンモニア（ＮＨ３）ガスを流し、室
内の圧力を１０ｍｔｏｒｒ程度に保ち、上記エピタキシ
ャルウェハに高周波高電圧を印加する。Next, flow argon (Ar) gas into this chamber to reduce the pressure to 3.
Sputter etching of the epitaxial wafer is performed by applying high frequency and high voltage to the epitaxial wafer while maintaining the temperature at 0 mtorr fj degrees. This sputter etch is Af
This is effective for removing oxides and the like on the surface of the GaAs layer (4). After stopping the busy sputter etching process and fully depleting the argon (Ar) gas in the room, it was time to remove the nitrogen (N) gas.
2) Flow gas or ammonia (NH3) gas, maintain the pressure in the chamber at about 10 mtorr, and apply high frequency and high voltage to the epitaxial wafer.
こうして放電を生ぜしめ、イオン化した窒素原子をＡｊ
ＧａＡｓ 層（４）の表面に入射する。化学的に活性な
ＡｊＧａＡｓ 層（４）と大きな運動エネルギを持つ窒
素原子が反応することにより、極めて化学的に安定なＡ
／ＧａＡｓ の窒化物が得られる。この窒化物層の厚
みが１００１程度になったところで、放電を停止し、室
内の窒素（Ｎ２）ガスもしくはアンモニア（ＮＨ３）ガ
スを排気する。次に室内のアルゴン（Ａｒ）ガス圧を１
．５ ｍｔｏｒｒ 、窒素（Ｎ２）もしくはアンモニア
（ＮＨ３）ガス圧を０．５ｍｔｏｒｒに制御しながら、
Ｔａ ２０５ターゲツト電極に高周波高電圧を印加する
。スパッタされた酸化タンタル粒子が、イオン化した窒
素原子を含むプラズマ中を通過する間に、窒化酸化タン
タル（ＴａＯＮ）が形成され、上記Ａ／ＧａＡｓ の窒
化物層上に堆積する。この窒化酸化タンタル層の厚みが
６５０人になったところで、スパッタリングを停止する
。この後通常の工程によりｐ形電極（６）ｎ形電極（５
）を形成する。In this way, a discharge is generated and the ionized nitrogen atoms are Aj
The light is incident on the surface of the GaAs layer (4). The reaction between the chemically active AjGaAs layer (4) and nitrogen atoms with large kinetic energy results in extremely chemically stable A
/GaAs nitride is obtained. When the thickness of this nitride layer reaches about 100 mm, the discharge is stopped and the nitrogen (N2) gas or ammonia (NH3) gas in the room is exhausted. Next, reduce the argon (Ar) gas pressure in the room to 1
．． 5 mtorr, while controlling the nitrogen (N2) or ammonia (NH3) gas pressure to 0.5 mtorr.
A high frequency high voltage is applied to the Ta 205 target electrode. While the sputtered tantalum oxide particles pass through a plasma containing ionized nitrogen atoms, tantalum nitride oxide (TaON) is formed and deposited on the A/GaAs nitride layer. Sputtering is stopped when the thickness of this tantalum nitride oxide layer reaches 650 mm. After this, the p-type electrode (6) and the n-type electrode (5
) to form.
このようにして得られたＧａＡｓ太陽電池では、樹脂な
どでコーティングした場合の変換効率が地上での太陽光
垂直入射下すなわちＡＭ工の条件で２０チ以上、また大
気圏外太陽光入射下すなわちＡＭＯの条件で１８％以上
という高い値が再現性良く得られた。以上のように上記
実施例における反射防止膜が光学的に優れていることが
実証された。In the GaAs solar cell obtained in this way, the conversion efficiency when coated with resin etc. is 20 cm or more under vertical sunlight incidence on the ground, that is, under AM conditions, and under extraatmospheric sunlight incidence, that is, under AMO conditions. A high value of 18% or more was obtained with good reproducibility under the conditions. As described above, it was demonstrated that the antireflection film in the above example was optically excellent.
さらに、上記実施例によるＧａＡ３太陽電池は、温度が
６５℃相対湿度が９０％以上の雰囲気で１０００時間保
存しても表面での変質は全く観察されず、変換効率の変
化もほとんどなく、極めて耐湿性にも優れていることも
確められた。これは反射防止膜材料として安定な窒化酸
化タンタルを用いているのに加えて、ＡｒＧａＡｓ 層
表面には、極めて化学的に安定なＡｊＧａＡｓ 層の窒
化物層を設けることによシ、高温水蒸気とＡｌＧａＡｓ
層との反応を阻止できたことに起因する。Furthermore, the GaA3 solar cell according to the above example shows no deterioration at all on the surface even when stored for 1000 hours in an atmosphere with a temperature of 65°C and a relative humidity of 90% or more, and there is almost no change in conversion efficiency, making it extremely moisture resistant. It was also confirmed that they have excellent sex. In addition to using stable tantalum nitride oxide as the anti-reflection coating material, by providing an extremely chemically stable nitride layer of AjGaAs on the surface of the ArGaAs layer, high-temperature water vapor and AlGaAs
This is due to the fact that the reaction with the layer could be prevented.
この発８ＡＦｉ以上説男したとおシ、第１導電形のＧａ
Ａｓ層に対し第２の導電形のＧａＡ２１層上のＡｒｘＧ
ａｌ−ｘＡｓ層と反射防止膜との間にＡ４ｘＧａｌ−ｘ
Ａｓの窒化物層を形成したので、上記Ａ／ｘＧａ １−
ｘ Ａｓ層の変質を防止することができる。This emission is more than 8 AFi, and Ga of the first conductivity type is
ArxG on the GaA21 layer of the second conductivity type with respect to the As layer
A4xGal-x between the al-xAs layer and the anti-reflection film
Since the As nitride layer was formed, the above A/xGa 1-
x Deterioration of the As layer can be prevented.
さらに、この発明の方法は上記Ａ／ｘＧａｌ−ｘＡｓ層
上に窒素７リズマ処理によってＡｒｘＧａｌ−ｘＡｓの
窒 □化物層を形成し、その後窒素イオンを含む雰囲気
で酸化タンタルのスパッタ法により、反射防止膜として
窒化酸化タンタルを形成したので、高変換効率でかつ耐
湿性の優れたＧａＡｓ太陽電池を製造することができる
。Furthermore, the method of the present invention is to form a nitride layer of ArxGal-xAs on the A/xGal-xAs layer by nitrogen 7 rhythm treatment, and then to form an anti-reflection film by sputtering tantalum oxide in an atmosphere containing nitrogen ions. Since tantalum nitride oxide is formed as the material, a GaAs solar cell with high conversion efficiency and excellent moisture resistance can be manufactured.
第１図は従来の構造のＧａＡｓ太陽電池の断面図であり
、第２図はこの発明によるＧａＡｓ太陽電池の一実施例
の断面図である。
図中（２）はｐ形ＧａＡｓ層、（４）はｐ形Ａ／ＧａＡ
ｓ層、（７）は反射防止膜、（８）けＡｊＧａＡｓ の
窒化物層、（９）は窒化酸化タンタル膜である。
なお図中同一符号は、それぞれ同一または相当部分を示
す。
代理人大岩 増雄
第１図
第２図
手続補正書（自発）
↑゛ｙ許庁長宮殿
１、事ｒ’１″の表示 特願昭５９−１２５５７号２、
発明の名称
ＧａＡｓ太陽電池および（の製造方法
；３．補正をする者
５、 補正の対象
明細書の特許請求の範囲の欄および発明の詳細な説明の
欄
６、補正の内容
（１）特許請求の範囲を別紙のとおり補正する。
（２）明細書中筒８頁第１５行目に” ＴＯ２０５ヨと
あるのを’Ｔａ２０５．に補正する・
（３）明細書中筒４頁第１５行目に「表面変換ヨとある
のを「表面変質ヨに補正する。
（４）明細書中部７頁第１５行目に’ＡＭＩＪとあるの
を’ ＡＭＩ Ｊに補正する。
以 上
特許請求の範囲
（１）第１導電形のＧａＡｓ層、このＧａＡｓ層上に形
成さね？、：第２導電形のＧａＡｓ層、この第２導電形
のＧａＡｓ層上に形成さ釘た第２導電形のＡｌｘＧａ１
−ｘＡｓ層、このＡｌｘＧａ １−ｘｆｉ、５ 層上に
形成さまたＡ（ｌｘＧａ １−ｘＡｓの窒化物層、及び
このＡｌｘＧａ 、−ｘＡｓ の窒化物層上に形成され
た反射防止膜を備えたことを特徴とするＧａＡｓ太陽電
池。
（２）上記反射防止膜は窒化酸化タンタルで構成したこ
とを特徴とする特許請求の範囲第１項目ｅ載のＧａＡｓ
太陽電池。
（３）上記Ａ６ｘＧａ １−ｘＡｓ層のＡＩ濃度Ｘが、
０．８≦ｘ＜１であることを特徴とする特許請求の範囲
第１項記載のＧａＡｓ太陽電池。
（４）第１導電形のＧａＡｓ層上に第２導電形のＧａＡ
ｓ層を形成し、この第２導電形のＧａＡ ｓ層上に第２
導電形のＡｌｘＧａ１−ｘＡｓ 層を形成した後、窒素
プラズマ中で上記ＡｌｘＧａ１−ｘＡｓ 層の表面にＡ
ｌｘＧａ Ｉ −ｘＡｓの窒化物層を形成し、しかる後
酸化タンタルをターゲット電極として、少な（とも窒素
もしくはアンモニアガスを含む雰囲気において、上記Ａ
ｌｘＧａ １−ｘＡｓの窒化物層表面に、反応性スパッ
タ法により窒化酸化タンタル薄膜を形成【７て反射防止
膜となしたことを特徴とするＧａＡｓ 太陽電池の製造
方法。FIG. 1 is a sectional view of a GaAs solar cell having a conventional structure, and FIG. 2 is a sectional view of an embodiment of a GaAs solar cell according to the present invention. In the figure, (2) is a p-type GaAs layer, and (4) is a p-type A/GaA layer.
s layer, (7) is an antireflection film, (8) is an AjGaAs nitride layer, and (9) is a tantalum nitride oxide film. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 2 Procedural amendment (voluntary) ↑ Indication of ``Y Office Director's Palace 1, fact r'1'' Patent Application No. 12557-1982 2,
Title of the invention GaAs solar cell and its manufacturing method; 3. Person making the amendment 5. Claims column of the specification to be amended and Detailed Description of the Invention column 6. Contents of the amendment (1) Patent claims The range of is corrected as shown in the attached sheet. (2) "TO205 yo" on page 8, line 15 of the middle cylinder of the specification is corrected to 'Ta205. (3) Line 15 of page 4 of the middle cylinder of the specification ``Surface transformation yo'' is corrected to ``Surface alteration yo.'' (4) In the middle part of the specification, page 7, line 15, ``AMIJ'' is amended to ``AMI J.'' The above claims ( 1) A GaAs layer of a first conductivity type is formed on this GaAs layer.A GaAs layer of a second conductivity type is formed on this GaAs layer of a second conductivity type.A GaAs layer of a second conductivity type is formed on this GaAs layer.
-xAs layer, formed on this AlxGa 1-xfi, 5 layer, and A(lxGa 1-xAs nitride layer, and an antireflection film formed on this AlxGa, -xAs nitride layer). (2) The GaAs solar cell according to claim 1, item e, wherein the antireflection film is made of tantalum nitride oxide.
solar cells. (3) The AI concentration X of the A6xGa 1-xAs layer is
The GaAs solar cell according to claim 1, characterized in that 0.8≦x<1. (4) GaA of the second conductivity type on the GaAs layer of the first conductivity type
A second conductivity type GaAs s layer is formed, and a second conductivity type GaAs s layer is formed.
After forming a conductive type AlxGa1-xAs layer, A is applied to the surface of the AlxGa1-xAs layer in nitrogen plasma.
A nitride layer of lxGaI-xAs is formed, and then tantalum oxide is used as a target electrode, and the above A
A method for manufacturing a GaAs solar cell, characterized in that a tantalum nitride oxide thin film is formed on the surface of an lxGa 1-xAs nitride layer by reactive sputtering to form an antireflection film.
Claims (4)
成された第２導電形のＧａＡｓ層、この第２導電形のＧ
ａＡｓ層上に形成された第２導電形のＡｊｘＧａｌ−ｘ
ＡｅＪｉ！、このＡｊｘＧａｌ−ｘＡｓ 層上に形成さ
れたＡ／ｘＧａ−ＸＡ８の窒化物層、及びこのＡｌｘＧ
ａ１−ｘＡｔｓの窒化物層上に形成された反射防止膜を
備えたことを特徴とするＧａＡｓ太陽電池。(1) A first conductivity type GaAs layer, a second conductivity type GaAs layer formed on this GaAs layer, and a second conductivity type GaAs layer formed on this GaAs layer.
AjxGal-x of the second conductivity type formed on the aAs layer
AeJi! , a nitride layer of A/xGa-XA8 formed on this AjxGal-xAs layer, and this AlxG
A GaAs solar cell characterized by comprising an antireflection film formed on a nitride layer of a1-xAts.
ことを特徴とする特許請求の範囲第１項記載のＧａＡｓ
太陽電池(2) The GaAs according to claim 1, wherein the antireflection film is made of electrified tantalum oxide.
solar cells
．８≦ｘ＜１であることを特徴とする特許請求の範囲第
１項記載のＧａＡｓ太陽電池。(3) The AI concentration X of the A/xGal-xAs layer is 0
．． The GaAs solar cell according to claim 1, characterized in that 8≦x<1.
ｓ層を形成し、この第２導電形のＧａＡｓ層上に第２導
電形のＡｌｘＧａ１−ＸＡＲ層を形成した後、窒素プラ
ズマ中で上記ＡｌｘＧａ１−ｘＡｓ層の表面にＡＺＸＧ
ａｌ−ＸＡ８の窒化物層を形成し、しかる後酸化タンタ
ルをターゲット電極として、少なくとも窒素もしくはア
ンモニアガスを含む雰囲気において、上記ＡｌｘＧａ１
−ＸＡ８の窒化物層表面に、反応性スパッタ法により窒
化酸化タンタル薄膜を形成して反射防止膜となしたこと
を特徴とするＧａＡｓ太陽電池の製造方法。(4) GaA of the second conductivity type on the GaAs layer of the first conductivity type
After forming an AlxGa1-XAR layer of the second conductivity type on the GaAs layer of the second conductivity type, an AZXG layer is formed on the surface of the AlxGa1-xAs layer in nitrogen plasma.
A nitride layer of al-XA8 is formed, and then the above AlxGa1 is formed in an atmosphere containing at least nitrogen or ammonia gas using tantalum oxide as a target electrode.
- A method for producing a GaAs solar cell, characterized in that a tantalum nitride oxide thin film is formed on the surface of the nitride layer of XA8 by a reactive sputtering method to serve as an antireflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012557A JPS60157269A (en) | 1984-01-26 | 1984-01-26 | Gaas solar cell and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012557A JPS60157269A (en) | 1984-01-26 | 1984-01-26 | Gaas solar cell and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60157269A true JPS60157269A (en) | 1985-08-17 |
| JPH0434834B2 JPH0434834B2 (en) | 1992-06-09 |
Family
ID=11808639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59012557A Granted JPS60157269A (en) | 1984-01-26 | 1984-01-26 | Gaas solar cell and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60157269A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
| US4698455A (en) * | 1986-11-04 | 1987-10-06 | Spectrolab, Inc. | Solar cell with improved electrical contacts |
| JPH0410577A (en) * | 1990-04-27 | 1992-01-14 | Hitachi Cable Ltd | Manufacture of gaas solar cell |
| RU2607734C1 (en) * | 2015-10-27 | 2017-01-10 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method of making gaas-based photocell |
-
1984
- 1984-01-26 JP JP59012557A patent/JPS60157269A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
| US4698455A (en) * | 1986-11-04 | 1987-10-06 | Spectrolab, Inc. | Solar cell with improved electrical contacts |
| JPH0410577A (en) * | 1990-04-27 | 1992-01-14 | Hitachi Cable Ltd | Manufacture of gaas solar cell |
| RU2607734C1 (en) * | 2015-10-27 | 2017-01-10 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method of making gaas-based photocell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434834B2 (en) | 1992-06-09 |
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