JPS60154694A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser which is made of a single chip and has a large output and inexpensive cost by forming a plurality of striped light emitting regions, and forming a plurality of independent electrodes corresponding to the light emitting regions. CONSTITUTION:An n type clad layer 12, an active layer 13, a p type clad layer 14 and an n type cap layer 15 are sequentially formed by a liquid phase epitaxial method on an n type substrate 11. Then, a plurality of striped p type diffused layers 17 are formed in parallel, and electrodes 16 independent from each other are formed on the upper surface of the layers 17. Since the layers 17 are formed in the striped shape by a photolithographic technique, the longitudinal axis of the layers 17 can be readily formed in parallel. Then, striped light emitting regions 20 are also formed in parallel in the longitudinal axes in the layer 13 at the lower side of the layers 17. Accordingly, the lights emitted from the regions 20 become in parallel. Further, since the electrodes 16 are divided, currents can be independently supplied to the stripes 17.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical field to which the invention pertains) This invention relates to a high-power semiconductor V used for optical radar, etc.
-Regarding the.

(Prior Art) Currently, microwave and millimeter wave radio waves are mainly used for radar, but if light is used for radar, it is effective for radar with a high resolution i-th because the wavelength is short.

However, since the attenuation and scattering of light in the air is larger than that of 'Ht waves, a high output light source with good directivity is required. A laser is a light source that satisfies this requirement. Among lasers, semiconductor lasers, which are small and have high luminous efficiency, are considered to be the most suitable elements as light sources for optical radars.

FIG. 1 is a perspective view of a conventional planar stripe type semiconductor laser chip. This semiconductor laser chip has an n-type substrate 1. n-type cladding layer 2. Active layer 3. P-type cladding layer 4. It consists of an n-type cap layer 5 and an electrode 6.6'. Then, the P-type expansion layer stripe 7 is formed so that the long side i1'll+ is perpendicular to the reflective surface A. Active layer:
The portion directly below the P/F2 diffusion layer stripe 7 is a laser emitting region 10 (diagonally mglS), and laser light is emitted in the longitudinal direction of this striped emitting region v,10.

In order to achieve high output power, it is common to arrange multiple semiconductor laser depths parallel to each other as shown in FIG.

Fig. 2 [a] is a plan view of a conventional high-power semiconductor laser in which all seven semiconductor laser chips 8 in Fig. 1 are arranged, and Fig. 2 [tb]
is its front view. However, in these figures, only a portion of the heat sink 9 is depicted. As shown in the figure (tag, tb), in order to obtain high output power from multiple semiconductor lasers i1H, it is necessary to arrange the long axes of the chip 80 and the light emitting region lO parallel to each other so that the direction of light is uniform. . However, in order to solidify the chips 8 on the heat sink 9 so that the longitudinal axes of the light emitting elements v and 10 in a large number of chips 8 are parallel to each other, it is very time-consuming and requires a precise solidification technique.

Therefore, the semiconductor laser shown in FIG. 2 is expensive. In addition, since a large number of expensive semiconductor laser beams 8 are required,
The conventional semiconductor laser shown in the figure is even more expensive and uneconomical.

(Object of the Invention) An object of the present invention is to provide a semiconductor laser with high output and low cost.

(Structure of the Invention) A semiconductor laser according to the present invention has complementary stripe-shaped light emitting regions, is provided with a plurality of randomly independent electrodes corresponding to each of the light emitting regions, and is composed of a single chip. It is the composition.

(Example> Next, the present invention will be explained in detail with reference to Examples.

FIG. 3 is a perspective view of one embodiment of the present invention. In manufacturing this embodiment, an n-type cladding layer 12. Active layer 13, P-type cladding layer 14. Form all n-type caps/115 in sequence. next,
A plurality of striped P-type diffusion layers 17 are formed in parallel with each other, and independent electrodes 1 are formed on the upper surfaces of these diffusion layers 17.
6'f6: Formed.

Here, since the P-type diffusion layer 17 is formed in a stripe shape using photolithography, the longitudinal axes of the diffusion layer 17 can be easily made parallel.

Therefore, the longitudinal axes of the light emitting regions 20 formed in stripes in the active layer 13 below the P-type diffusion layer 17 are parallel to each other. Therefore, the lights emitted from the light emitting region 20 are parallel to each other. Furthermore, since the direct pole portion 16 is divided, direct current can be supplied to each of the diffusion layer stripes 17 independently. Therefore, each luminous class lf! The intensity of the light of 20 can be made constant, and a uniform light beam suitable for optical radar can be obtained.

In addition, the conventional chip shown in Fig. 1 has 20
A width of 0 μrn was required. However, in the half-four body laser of this embodiment, the gap between the P-type diffusion layers 17 is 50 μm.
Since it can be made as narrow as possible, it is possible to increase the integration by about 4 times. InGaAsP commonly used as chips.

() Since compounds such as aA5As are expensive semiconductor laser chips, the cost of semiconductor lasers can be significantly reduced by increasing their integration. Incidentally, since the semiconductor V-za for optical lasers is normally driven by pulses, there are almost no thermal problems even when integrated.

(Effects of the invention +P:) According to the present invention described above, it is not necessary to arrange a plurality of metal chips with high precision, and the longitudinal axes of the light emitting regions are aligned in parallel with high precision in advance by photolithography technology, etc. It is possible to provide a semiconductor laser with high output and low cost.

[Brief explanation of the drawing]

Figure 1 is a perspective view of a conventional semiconductor laser chip, and Figure 2 (a
) is a plan view of the high-power semiconductor laser in which multiple gold semiconductor laser tips are arranged in Figure 1, tb+ in the same figure is its front view, and Figure 3.
The picture is Kazumi Honkatsu hf! It is a perspective view of the i row. 1.11...N-type substrate, 2.1.2...
・N-type cladding layer, 3.13...active layer, 4.
14...P-type cladding layer, 5.15...
・N-type cap layer, 6°16... Electrode, 7.1
7... P-type ambiguous layer, 8... Semiconductor laser chip, 9... Heat sink, 10°20.
...Emission area, A...Reflection surface, B...
...The emission direction of the laser beam. Agent Patent Attorney Yuki Uchihara 1 ゛ha

Claims (1)

[Claims] A plurality of striped light emitting regions are formed. A semiconductor laser formed of a single chip, including a plurality of mutually independent electrodes each corresponding to the light emitting region.