JPS60154582A - Hall element - Google Patents

Abstract

PURPOSE:To prevent dispersion among elements or variation by a temperature by forming a Schottky junction or a P-N junction on an input current path and applying bias voltage to the junction from the outside. CONSTITUTION:A region 1 consists of an N type single crystal layer, and a region 2 is composed of a Schottky metal forming a Schottky junction with the region 1. A region 3 represents a depletion layer by the Schottky junction, and the thickness (l) of the region 3 can be changed by reverse bias voltage V applied from the outside. Consequently, the thickness d-l of a path for input currents I can be altered by reverse bias voltage, and Hall output voltage can be controlled by voltage V. The object can be attained even when a P layer is formed in place of the Schottky metal 2 at that time.

Description

[Detailed description of the invention] (Technical field of invention) The present invention relates to the structure of a Hall element.

(Prior Art) Hall elements have recently been widely used as magnetoelectric conversion elements in motors used in V'l'Rs, players, and the like.

The shape of a Hall element is usually a cross-shaped semiconductor as shown in Fig. 1. When an input current is passed through an end A-A' under an external magnetic field B perpendicular to the element, an end C- Hall output voltage VH is obtained at C'. In this case, the magnitude of the field fr and the Hall output voltage VH is expressed by the following equation, as is well known.

BI/eNd Here, B is the external magnetic field, ■ is the input current, N is the carrier concentration, d is the element thickness, and e is the amount of electron charge.

Normal output voltage VH size and input resistance or consumption TJ
Considering L force, N-1×1011-3d=o, 2~
It is appropriate to choose 0.3 μmK.

However, in actual crystal manufacturing, the concentration and thickness vary slightly not only between wafers but also within the wafer surface, so as is clear from the above equation, even under the same current and magnetic field, each A situation arises in which the output paper pressure varies depending on the element.

(Object of the Invention) An object of the present invention is to obtain a Hall element with less variation in output voltage.

(Structure of the Invention) According to the present invention, an output current is
A Hall element with constant pressure is obtained. Such a Hall element can eliminate the conventional drawback that the output voltage varies depending on variations in concentration and thickness.

(Example of the invention) Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 2 is a schematic diagram of a cross section of a ball element according to an embodiment of the present invention. Region 1 is an N-type single crystal layer with an impurity concentration of about I x 101'13 , and region 2 is a Schottky metal that forms a Schottky junction with region 1 of the N-type single crystal layer. Region 3 is a depletion layer formed by a Schottky junction, and its length l is determined by the externally applied reverse bias voltage V.
It can be changed by f%. Therefore, the thickness d-j of the input current path can be varied by the reverse bias voltage, and as can be seen from the above equation, the Hall output voltage VH can be controlled by the external bias voltage (2).

A plan view of the actual structure of the Hall element according to the invention is shown in FIG. The shaded area in the figure is Schottky metal. As is clear from the above description, it is sufficient to form the sag only in the part of the input current path from which the output voltage is taken out. It is clear from the above description that the purpose can be achieved even if a P layer is formed instead of the Schottky metal. Furthermore, fluctuations in the output voltage due to temperature can be corrected by an external voltage.

As described above, according to the present invention, the Hall output voltage can be controlled by degrees Celsius using an external bias voltage, and variations between elements or variations due to temperature can be prevented.

[Brief explanation of drawings]

Figure 1 is a perspective view of a conventional Hall element. FIG. 2 shows a cut-out of a Hall element according to an embodiment of the present invention.
T, ah, □3. Yo. -□6 is a perspective view of an O'Neill element. 1... N-type single crystal layer, 2... Schottky metal. 3... Depletion layer. Agent: Susumu Uchihara, Patent Attorney H1 Figure 1 Figure 3

Claims (1)

[Claims] A Hall element characterized in that a Schottky junction or a PN junction is provided in a part of an input current path, and the thickness of the input current path can be changed by applying a bias voltage to the junction.