JPS60153113A - Capacitor, high speed producing apparatus and producing method - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This application is a continuation-in-part of U.S. Application No. 562,779 filed December 19, 1983 under the same title (C!Ii' , ).

The present invention relates to monolithic capacitors, and more particularly to fine multilayer capacitors and methods and apparatus for manufacturing the same.

(Technical Background of the Invention) This invention is related to the following jointly assigned pending patent applications: No. 562,873 filed on December 19, 1983 entitled "Capacitors Having Resin Dielectric and Method of Manufacturing"; Capacitor J containing acrylic polymer, December 1983 1
U.S. Application No. 562,893, filed on September 9
No. 562, filed December 19, 1983.
．． No. 872 [Ester Monomers Incorporated with Acrylic Containers and Polymers thereof Useful as Capacitor Dielectrics] and U.S. Application No. 562, filed December 19, 1983,
No. 894, "Multifunctional Acrylate Monomers for Polymers Used as Capacitor Dielectrics," the contents of which are incorporated herein by reference to the application number.

Unlike metallized film capacitors, which are self-supporting films wrapped into a capacitor shape, monolithic capacitors have electrode and dielectric layers bonded together into a single structure.

Miniaturized capacitors are extremely small capacitors used in microcircuits.

The smaller the overall dimensions, the smaller the effective value of the capacitance. However, on the contrary, the thickness of the inserted dielectric layer increases the capacitance between adjacent electrodes, and the number of separated electrode pairs directly influences the increase in capacitance.

Therefore, according to the basic theory of capacitors, a capacitor with a very thin dielectric layer and a large number of electrode pairs has an effective capacitance despite the extremely small active area of the electrodes and small dimensions. be able to.

Modern microcircuit technology is not only suitable for fine capacitors, but also satisfies the high temperature resistance required for such capacitor applications. In electronic circuits, capacitors can be exposed to continuous temperatures of 230°C or higher. Furthermore, according to circuit manufacturing technology such as ultrasonic welding, melting of welded materials at temperatures exceeding 280°C is possible for 10 to 30°C.
It is possible to expose the capacitor for 0 seconds.

(Object of the Invention) The first object of the present invention is to provide a structure and method for an extremely small microcapacitor having a practical capacitance;
and an improved capacitor concept including a reservoir device for forming such a structure.

A second object of the invention is to provide the aforementioned concept, which allows capacitors of large capacitance to be manufactured economically and quickly while limiting the amount of material used.

Still in this connection, the object is to provide a concept as described above, in which the electrical or lead connections to the individual capacitors can be made easily and economically, and to provide a capacitor that can be sealed without difficulty.

The third object of this invention is to
The object of the present invention is to provide a concept in which a capacitor that can withstand temperatures of about 80° C. has the above-mentioned characteristics.

A similar fourth object of the invention is to provide a concept that can be easily mounted on the bottom or back side of a circuit board in order to reduce the physical dimensions of circuits using such capacitors.

A fifth object of the invention is to provide a concept or reversible capacitor having the above characteristics without polarity.

A sixth object of the invention, in addition to the fifth object, is to provide a concept in which the capacitor ensures an open state, ie, the circuit self-recovers without shorting.

(Examples of the Invention) The present invention will be described below with reference to specific examples and methods, but the invention is not limited to these examples and methods; on the contrary, the invention is not limited to these examples and methods. The defined technical scope of the invention includes all modifications, changes, and equivalents.

According to the drawings, in FIGS. 1 and 1A, a capacitor 10 embodying the inventive concept is shown, the capacitor comprising an encapsulation 11 having an extending connecting wire lead 12. There is.

FIG. 1 is a cross-sectional view showing conductive substrate 13, conductive layer 15, and dielectric coating 16 with notches 14 for separation into individual pieces.

The figure shows the capacitor 10 before the leads 12 are connected to the individual board pieces 13 and the capacitor is encapsulated.
is illustrated.

The substrate 13 has a thickness of approximately 0.0381 to 0.0508 (1,5
~2 mil) thick copper notes are preferred. Conductive layer 15 is an electrode material such as aluminum approximately 200-500 Angstroms thick. Further, the dielectric coating 16 can be hardened to a thickness of approximately Emicron at its central portion. For example, Cross Link can be used to adhere or adhere to electrode materials and substrates.
d) is a radiation-curable resin.

Useful resins are the multifunctional acrylic materials and mixtures thereof mentioned in the previous cross-reference.

It is clear from the above dimensions that the outer circumference is '54 cnr.
Even a microcapacitor of this type, which is (1 inch) square and several millimeters thick, can have more than 1000 electrodes and dielectric layers alternating.

Depending, of course, on the overall size and number of electrode pairs, it is possible in this case to obtain a capacitor with a capacitance of 0.001 to 100 microfarads and capable of operating at over 50 volts.

The dielectric coating 16 is separated from the conductive layer 15 by a constant distance. Here, this conductive layer is divided into two offset parts extending towards a capacitance part or region 17. Within this capacitance section, the layers 15 are deposited uniformly and alternately in an electrically insulating manner.

According to the invention, on the substrate 13 there is a terminal portion 18 defining an electrical connection. This electrical connection terminates at a cutting line 19 at a substantially constant distance from the opposite and separate ends of the central capacitance region 17.

Coating 16 tapers from a uniform thickness at uniform capacitance portion 17 to zero thickness near terminal portion 18 . For this purpose, the capacitor has a sloped portion 21.

The distance from the central capacitance region 17 to the cutting line 19 and the terminal portion 18 is sufficient such that the top coating layer 6 of a given capacitor has a horizontal dimension that can accommodate the last conductive layer 15 in the sloped portion. It is something. Horizontal refers to the plane of the substrate 13.

Therefore, assuming that the electrode material is deposited approximately perpendicular to the substrate 13 and that the layers 15 of the sloped portion 21 are at a steeper angle with respect to the substrate as successive layers are formed, the cutting of the initial capacitance region The distance between the lines must be large enough and there is no need for the last electrode layer 15 to be perpendicular to the substrate.

In practice, if each coating and each layer has the aforementioned thickness, it is desirable that the terminal portion 18 be at least 10 microns separated from the central canopy region 17. Otherwise, the coatings and layers 15, 16 in the sloped portion 21 control is difficult and the final configuration is unreliable.

It can also be seen that the purpose of the notch 14 is to divide the substrate 13 so that no electrical connection occurs between the two terminal portions 18.

In practicing embodiments of the invention, capacitor lO
A large number of such capacitors are formed at one time by depositing strip-shaped electrodes and dielectric material on a substrate 13 that moves at high speed relative to a deposition apparatus. The desired number of layers 15 and coatings 16 can be formed by successive passes through the deposition apparatus.

FIG. 10 shows a series of such a continuum 25. This continuum 25 is in the machine direction 26 (described below)
and can be divided into individual capacitors along cutting lines 27 at intervals depending on the desired capacitance. in this case,
Increasing the spacing means that each layer 15 has an individual capacitor 10
The electrode area within the capacitance area 17 is not large, and as a result, the capacitance is also large.

Due to the shape of the continuum, the capacitor 10 can be cut to desired dimensions, the notch 14 can be formed, the leads 12 can be attached,
The whole can still be sealed into a capsule.

According to FIG. 1, after depositing each strip of electrode material, the dielectric coating 16 can be formed by depositing the coating in strips on the same corresponding location on the substrate 13.

To form alternating portions of electrode layers 15, electrode material is deposited on every other terminal portion 16 and adjacent capacitance region 17 during -deposition steps. In the next step, after applying the interlayer dielectric coating, electrode material is deposited on the terminal portions 18 and adjacent capacitance areas 7 (FIGS. 4A and 4B) to which no material was previously deposited.

According to the present invention, an example of a vacuum chamber or a device around a chamber 30, which is a housing divided into a plurality of vacuum sections, is shown (FIG. 2).

In the vacuum atmosphere, a carrier 31 and a dielectric vapor deposition device 32 are installed.
, a monomer curing device 33, and an electrode material vapor deposition device 34. A substantial vacuum should be on the order of 1 x 10-4 Torr or less.

The gear rear 31 includes a water-cooled drum 3 driven by a motor 36.
It is 5. The outer cylindrical surface 37 of the drum defines a fast moving continuous surface passing through the dielectric formation area and the electrode formation area.

The area in which the drum surface 37 and the devices 32, 33 are arranged constitutes a dielectric formation area. The area where the drum surface 37 and the device 34 are still located constitutes the electrode formation area.

The direction of rotation of the drum is the machine direction 26, which is the direction in which its surface passes through the dielectric formation area and the electrode formation area.

Due to the small dimensions to be handled, the surface 37 must be smooth and precise. The sheet of substrate 13 is held firmly in drum 35, with the outer circumferential surface of the substrate still defining surface 37.

The drum 35 is cooled to 70"F to facilitate the agglomeration of vapor deposits.
It operates at drum face speeds of 180 meters/minute (150-600 feet/minute).

Electrode material deposition equipment 34 includes a conventional electron beam vaporization equipment 41, such as equipment used to metallize films in a vacuum atmosphere.

The vaporization rate is detected by a conventional quartz monitoring device 42. This monitoring device provides a feedback signal that controls the rate at which aluminum is vaporized by device 41.

The pattern on which the aluminum vapor is deposited is a mask having openings 44 through which the vapor passes, here a shadow mask 4.
Controlled by 3. The opening 44 is located at the intermediate terminal portion 1.
8, it has a main portion 45 of sufficient width to bridge the capacitance regions 17 in two adjacent continuums 25.

As the capacitor is formed, the sloped portion 21 becomes thicker at the surface and requires more aluminum to form the entire current carrying layer. This is accomplished by creating a mask opening 44 having an extended portion 46 that bridges adjacent sloped portions 21 and intermediate terminal portions 18 .

The amount of electrode material deposited is a function of the time that the surface is under the open portion of mask 43. At this point, a large amount of metal is deposited on the sloped portion 21 of the capacitance region 17.

The alternating pattern of metal vapor deposition described above in connection with FIGS. 4A and 4B is obtained by shifting the mask 43 about the axis of the drum 35 with each revolution of the drum.

A mask motor 47 provides the shifting action via a simple mechanical connection 48.

A controller 50 is connected to the drum motor 36 to detect rotation of the drum. The controller 50 also supplies appropriate shift signals to the mask shift motor 47.

It is desirable to hold the mask 43 close to the surface to which the metal vapor is to be deposited. The mask is removed by the mask row removal motor 51.
The mask is held close by the mask 37 and, under the command of the controller 50, on each drum rotation, the motor 51 pulls the mask away from the surface 37 a distance approximately equal to the thickness of the electrode being deposited.

Since it is necessary to start up the equipment 4 and bring the equipment into a stable operating state before starting capacitor manufacturing, equipment 4
A movable shutter 52 is interposed between the mask 1 and the mask 43, and the steam passage is closed until the shutter 52 is removed.

According to one example of the invention, the dielectric vapor deposition device 32 instantaneously vaporizes a monomeric dielectric material under a moderate pressure difference.
Relatively small gaseous molecules are directed through the nozzle 55 onto the capacitor series 25 . Liquid monomer is on line 57
and the horn 5 of the ultrasonic atomizer 59 via the pulp 56
It is supplied to the open end of 8.

The small fluid droplets thus formed are placed in the aforementioned acrylic resin reservoir at an appropriate temperature, e.g.
It collided with the inner wall of the vaporizing tube heated to 6 degrees Celsius.

In this way, the liquid is instantaneously vaporized, i.e.
Reduces the chance of sea vaporization and polymerization. For better control of deposition, smaller gas molecules are forced through straighter paths.

A pressure in tube 61 of approximately I Torr causes the monomer gas flow to flow through nozzle 55 for deposition and agglomeration. Nozzle 55 is heated by conduction from Q-Pro 1 to minimize condensation of the gas stream before leaving the nozzle.

By using guiding deflection means 63 in the nozzle 55 and by placing the nozzle 55 very close to the agglomeration surface of the continuum 25, the monomer gas flow is limited. This also limits the deposition area by forming an end barrier wall of inert gas emitted through a set of nozzles 64 on either side of the monomer nozzle 55, thereby limiting the deposition area and still tapering the end shape of the coating. It can be done.

Inert gas is supplied to nozzle 64 via line 65 and control pulp 66. Nozzle 64 is secured opposite surface 37 with a clearance distance of 4 mils sufficient to configure terminal portion 18 as desired.

The monomer gas nozzle 55 is withdrawn by a tripping motor 67 by an amount approximately equal to the thickness of the coating 16 with each rotation of the drum under the command of the controller N50.

The thickness of the coating 16 depends on the deposition time, i.e. the surface 3
7 depending on the length of the nozzle 55 and the proportion of monomer flowing through the pulp 57. By balancing the inert gas flow from the pulp 66 against the monomer gas flow, the tapered sides of the strip dielectric coating can be controlled.

An exemplary configuration of a reservoir for atomizing liquid monomer is shown in FIG. According to the figure, the monomer is directed through the capillary tube to a point near the hole 158 of the ultrasonic atomizer 59. According to this configuration, the capillary tube 68
A semicircular portion is formed between the end of the tube and the end of the bone 58 to uniformly flow the monomer through the tube.

The agglomerated liquid monomer is transferred to a second device 33 in the dielectric formation region that includes a radiation source such as a gas discharge electron beam gun 70.
is radiation hardened.

Electron gun 70 directs a stream of electrons from housing chamber 71 through emitter window 72 onto the monomer. This allows the material to cure into a polymerized crosslink configuration that can withstand the high temperatures that capacitor 10 may encounter. Also, the hardened material will adhere thereto.

Electron gun 70 includes a rectangular copper cathode 73 supported by a connector 74 in an insulator 75. The insulator 75 is a ground shield 7 fixed to the housing 71.
It is installed in 6. A mesh screen 77 for extracting tungsten is fixed to the window 72 .

Gas, such as argon, is supplied to housing chamber 71 via line 78 and control pulp 79. A constant voltage is applied between the cathode 73 and the connector 74, and between the shield 76, the housing 71, and the screen 77. As a result, considering the presence of a gas atmosphere, gas plasma is first formed within the housing between the can door 3 and the screen 77.

Preferably, a groove 81 is formed in the cathode surface, so that the electrons in the nonlinear beam are repelled to substantially fill the housing chamber 71.

Due to the generated plasma, other electrons leave ionized gas molecules in other parts of the chamber. This is due to the field expansion effect where electrons with widely varying energy levels are emitted from the window 72.

It has been found that if the energy levels of the emitted electrons are spread over a wide range, the monomer can be cured with only a slight charge on the surface. However, it has been found that avoiding charging the surface of coating 16 minimizes the possibility of arcing in the electrode layer.

Still, it can be seen that the electron gun 70 can form a wide electron beam and thus can process a large number of capacitor series at the same time.

The operation of the entire device will be explained below.

The electrode layer is laid down, coated with a dielectric, and the dielectric cured before the surface to be formed is passed to re-form the subsequent electrode layer and dielectric coating. The thickness of the electrode layer and dielectric coating can be adjusted to a desired thickness by matching the deposition rate to the surface speed of the drum 35.

It will be explained that the capacitor 10 is actually a minute capacitor and has an effective capacitance value. Those skilled in the art will appreciate that the apparatus and method of the present invention allows the capacitor 10 to be manufactured economically because a large number of capacitors can be manufactured simultaneously and at high speed. It will also be appreciated that each capacitor can be manufactured economically since only a small amount of raw material is used.

Despite the small dimensions of each capacitor, the capacitor design provides a significant amount of area to support the lead wires during assembly.

In addition, since capacitors are made only of metal and hardened ML thermal resin, they can be exposed to considerable temperatures, including temperatures within a certain limited time using ultrasonic bonding assembly technology.
These capacitors can withstand.

Due to the extremely small dimensions, such as the thickness of the electrode layer and dielectric coating, the capacitor 1o has self-healing properties. In other words, the dielectric coating has a small amount of metal interposed in order to electrically connect the opposing electrode layers, but if there is a defect in this dielectric coating, an electric current is applied to remove the defect. It is possible to bake or melt very small sections of the metals being connected by flowing the metal. Therefore, there is little risk of the capacitor shorting out.

The above-described apparatus and method can also be effectively used to form capacitors having a full width shape different from the continuum shape of FIG. 1O.

As shown in FIG. 13, similar elements to those already described are:
As with the same reference numerals with the suffix l for differentiation, the capacitor lOa has a uniform thickness of a conductive layer 15a and a dielectric coating 16a, and can be formed on a substrate 13a.

Individual capacitors 10 are cut along cutting lines 19a, 27a.
When a is separated, the end of the conductive layer 15a appears. Therefore, some form of end terminal is required to electrically connect the alternating layers 15a to opposite ends of the capacitor.

A capacitor 10a of this type can be formed by removing the inert gas nozzle 64 and uniformly depositing the monomer via the apparatus 32. In addition, the conductive layer 15
a is not tilted, the shadow mask 4 of the device 34
3 is also unnecessary. That is, the capacitor 10a may be formed in a full-width shape according to the width of the devices 32, 33, 34.

It is to be understood that the above description is merely a specific example, and that the technical scope and scope of interpretation of this invention should be determined by the scope of the claims.

[Brief explanation of the drawing]

FIG. 1 is an enlarged sectional view of an uncompleted capacitor according to an embodiment of the present invention, FIG. 1a is a perspective view of the completed capacitor of FIG. 1, and FIG. 2 is a system diagram of an apparatus according to an embodiment of the present invention. 3 is a partial perspective view of the device shown in FIG. 2, FIGS. 4a and 4b are partial sectional views of the device of FIG. A system diagram showing a part of the device shown in Fig. 2 is enlarged and a part is shown as a cross section.
7 is a partial system diagram of the device in FIG. 2, FIG. 8 is a bottom view of the device in FIG. 7, FIG. 9 is a perspective view of the device in FIG. 8, 10 is a perspective view of the group of capacitors shown in FIG. 1 in the manufactured state, FIG. 11 is a perspective view including a partial cross-section of the device shown in FIG. 2, and FIG. 13 is a perspective view similar to FIG. 10 showing a group of capacitors made in a similar manner to FIG. 10; 10... Capacitor, 11... Capsule-shaped sealing body,
12... Wire lead, 13... Board, 14...
Notch, 15... Conductive layer, 16... Dielectric coating, 17... Center capacitance region, 18...
・Terminal portion, 21... Inclined portion, 30... Chamber, 31... Carrier, 32... Dielectric vapor deposition device,
33... Monomer curing device, 34... Electrode material vapor deposition device. -Vertical 4z. Fukōnin swords introduction book monomer 5 mutual B・one vertical!・Continued from page 1 Priority claim O1 Superior 4th June 14th 0 United States (US) [
Phase] 620B47 @ Inventor Mooyoung No1m
Glens Forest, New York, 12801 Herend, United States

Claims (1)

Claims: 1. a housing having a vacuum section; a carrier within said housing defining a high-speed moving surface repeatably movable through said section; and 1. a carrier for depositing a conductive layer on said surface. evaporation means disposed in one vacuum section; dielectric deposition means disposed in one vacuum section for depositing a coating of dielectric on said conductive layer; means for controlling each of said deposition means to deposit a conductive layer and cover with a dielectric before passing through said deposition means to re-form the coating. 2. a vacuum chamber, a carrier in said chamber defining a continuous surface moving at high speed, a metal deposition means disposed within said chamber for depositing a metal layer on said surface, and a hardening layer on said metal layer. dielectric deposition means disposed within said chamber for depositing a possible dielectric coating, and said respective deposition means for re-forming a subsequent conductive layer, coating, and cured portion with a repetitively moving surface. and means for controlling said deposition means to deposit a conductive layer, coat with a dielectric, and cure the dielectric before passing through the capacitor. 3. The apparatus according to claim 2, wherein the carrier is a drum, the metal vapor deposition means evaporates the electrode metal, the dielectric vapor deposition means evaporates the curable monomer, and the metal vapor deposition means evaporates the curable monomer. The means is a high-speed capacitor manufacturing device equipped with an electron beam gun. 4. The apparatus according to claim 3, wherein the dielectric vapor deposition device operates to instantaneously evaporate the dielectric, and the beam gun is a gas discharge type electron beam gun. Device. 5. Means for forming a layer of an electrode material on one surface within a predetermined electrode formation region, and forming a coating of a dielectric material that can adhere to the electrode material on one surface within the predetermined dielectric formation region. through the two areas in the above order such that two different parts of the surface are simultaneously present in each corresponding area for forming an electrode layer and a dielectric coating alternately on the substrate surface. and means for repeatedly passing a substrate surface carrying said layer and said coating under vacuum on a substrate surface. 6. The apparatus according to claim 5, further comprising means for controlling the ratio of forming the electrode layers and the dielectric coating in order to predetermine the thickness of the electrode layers and the dielectric coating to be formed alternately. Continuous manufacturing equipment for multilayer capacitors. 7. In the apparatus according to claim 5, the means for forming the coating of the dielectric material includes a first nozzle extending near the dielectric formation region on the surface of the substrate; a set of second nozzles disposed near opposite sides of said first nozzle to form walls of inert gas on both sides;
Continuous manufacturing equipment for multilayer capacitors, which is equipped with a nozzle. 8. The apparatus of claim 7, wherein the gt nozzle is held so that the first nozzle is in the vicinity of and out of contact with the coating after each stroke of the substrate. An apparatus for continuously manufacturing a multilayer capacitor, comprising means for separating the first nozzle from the surface of the substrate. 9. In the apparatus according to claim 5, the means for forming the layer of electrode material includes a means for depositing a metal electrode material and a means for limiting the deposited metal electrode material to an electrode forming area. A continuous manufacturing device for multilayer capacitors, which is equipped with a mask. 10. The apparatus of claim 9, including means for separating the mask from the substrate surface after each iterative step of the substrate to maintain the mask at approximately the same distance from the coating. An apparatus for continuous production of multilayer capacitors comprising means. 11 A temporary electrode layer forming means for forming an electrode material layer of a predetermined thickness on one surface within a predetermined electrode formation region, and an electrode layer forming means capable of forming an electrode material layer of a predetermined thickness on one surface within the predetermined dielectric formation region. a dielectric coating forming means for forming a coating of a dielectric material, a radiation source for curing the dielectric coating in the dielectric forming region, and a radiation source for curing the dielectric coating in the dielectric forming region; a means for moving the reservoir; a means for forming the electrode layer and the means for forming the dielectric coating; a radiation source; and a reservoir for controlling the means for forming the electrode layer and the coating of the cured dielectric material to a predetermined thickness. and control means for forming a capacitor on a substrate surface under vacuum. 12. The capacitor manufacturing apparatus according to claim 11, wherein the radiation source is a gas discharge electron beam gun. 13 In the device according to claim 11>
@fliil The dielectric coating forming means includes a gas flow generating means for generating a gas flow of a curable dielectric material and a coating of the dielectric material within a predefined portion within a predetermined dielectric forming area. a gas flow concentrating means for concentrating the gas flow in a certain direction for forming a capacitor. 14. In the apparatus according to claim 13, the gas flow generating means is based on instantaneous evaporation, and the gas flow concentration means is configured to generate a heated nozzle in order to prevent the nozzle from clogging with dielectric material. Capacitor manufacturing equipment equipped with. 15. Depositing a continuous conductive layer with the layers being offset to define a central capacitance region of the deposited electrically insulating elongated layer, the layers of the capacitance region being separated at substantially regular intervals by a dielectric coating. depositing a dielectric coating on each of said layers such that said coating deposition is controlled to slope toward a cutoff line substantially separated from two separated portions of a central capacitance region. , the layers are deposited such that the successive layers extend beyond the cut-off line so as to penetrate into the separated terminal portions, and the spacing of the cut-off lines is such that the top dielectric coating of the multilayer capacitor is in the capacitance region. A method of manufacturing a capacitor in such a way that the plane has a dimension sufficient to extend from the terminal portion to the terminal portion on which the final layer is deposited. 16 In the method described in claim 1-5,
Capacitor manufacturing, wherein said layers and said coating are arranged in succession in the form of an elongated strip with the ends thereof forming terminal portions, and said capacitor manufacturing comprises the step of cutting said strips into individual capacitors. Method. 17. A capacitor manufacturing method according to claim 16, comprising the step of connecting wire leads to terminal portions of each capacitor. 18 forming continuous conductor layers separated by dielectrics;
A method for controlling dielectric deposition comprising the steps of: directing vaporized dielectric at a constant rate over time to a central region to form a -m coating; defining an end barrier where the vaporized dielectric material 1 is at regular intervals; and vaporizing from the center region toward the end barrier to form a tapered surface from the center region toward the end. limiting the dielectric flow of the capacitor. 19. The method of claim 18, wherein the end barrier is defined by an inert gas flow wall, and wherein the step of restricting vaporized dielectric flow reduces the flow rate of the vaporized dielectric and the inert gas. A method of manufacturing a capacitor including a step of balancing. 20 Forming an electrode material layer on a part of the surface within the predetermined electrode formation region, and applying a dielectric layer to another portion of the substrate within the predetermined dielectric formation region using the dielectric material that can be bonded to the electrode material. simultaneously forming a coating of material and repeating the substrate in the two regions sequentially to alternately form an electrode layer and a dielectric coating on the substrate and periodically vary the portions present in each region; A method for manufacturing a capacitor in which a monolithic multilayer capacitor is continuously manufactured under vacuum on a substrate surface comprising the steps of: 21. A capacitor according to claim 20, comprising the step of controlling the rate at which the electrode layers and dielectric layers are formed in order to predetermine the thickness of the electrode layers and dielectric coating that are alternately formed. Production method. 22 (a) forming a layer of electrode material of a predetermined thickness on a substrate; and (b) applying a coating of radiation-curable dielectric material to a predetermined thickness within a predefined portion on the electrode layer; (c) curing the dielectric coating with a radiation source; (d) forming a predetermined thickness of another electrode material layer on the cured dielectric coating; ) repeating each of the steps (b) and (d) a predetermined number of times to form alternating electrode layers and cured dielectric material coatings of predetermined thickness on the substrate. A method of manufacturing capacitors that involves manufacturing capacitors on a substrate under vacuum. 2. The method of claim 22, wherein the radiation source is a gas discharge electron beam gun. 24. The method of claim 23, wherein forming a coating of dielectric material comprises forming a gas flow of curable dielectric material and coating the dielectric material within a predefined area. concentrating the gas flow in a certain direction to form a capacitor. 25 a conductive layer having offset layers to define a central capacitance region of the deposited electrically insulating elongated layer, said conductive layer having layers of capacitance regions separated at substantially regular intervals by a dielectric coating; a dielectric coating on the central capacitance region, the coating sloping toward substantially spaced lines from two separate portions of the central capacitance region, each layer forming a dielectric coating on the central capacitance region; extending beyond said lines with successive layers to be melted, yet the spacing of said lines is sufficient to have a planar dimension such that the top dielectric coating of the multilayer capacitor extends from the capacitance region to the terminal portion supporting the final layer. A capacitor made like this. 26 comprising a capacitive active part, two electrode junction parts separated from each other from said active part by a sloped part, and first and second groups of electrode layers arranged alternately, each layer of each group Extending through the active part of all layers and the capacitive active part of the capacitor deposited with a constant spacing,
each layer has an electrode bonding margin deposited and brought into electrical contact with the margin of each other layer in the group to form an electrode bonding portion of the capacitor, with an active area still contributing to this portion; each layer also has a dielectric coating that adheres to and adheres to six pairs of adjacent electrode layers and between each pair of diagonal electrode layers; A monolithic multilayer capacitor in which the dielectric coating has a substantially uniform thickness within the capacitive active portion and is tapered with zero thickness through the sloped portion. 27. A monolithic multilayer capacitor according to claim 26, wherein the active portions are separated by more than 10 microns by each of six of the junction portions. 2. Product manufactured by the method described in claims 15, 20, and 22