JPS60152078A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JPS60152078A JPS60152078A JP59008350A JP835084A JPS60152078A JP S60152078 A JPS60152078 A JP S60152078A JP 59008350 A JP59008350 A JP 59008350A JP 835084 A JP835084 A JP 835084A JP S60152078 A JPS60152078 A JP S60152078A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- semiconductor
- photovoltaic device
- type
- photovoltaic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 230000004913 activation Effects 0.000 claims description 6
- 239000000969 carrier Substances 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 Cd There are Te Chemical compound 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（イ）技術分野
本発明は、光を電気に変換する効率の高い光起電力素子
に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field The present invention relates to a highly efficient photovoltaic device that converts light into electricity.
（ロ）従来技術とその問題点
従来、光起電力素子として結晶シリコン（以１・ｃ−３
ｉと記す）、結晶ガリウムヒ素（以１’ｃ−ＧａＡｓと
記す）およびアモルファスシリコン（以１ζａＳｉと記
す）などが利用されておりこれらを用いた光起電力素子
は公知である。(b) Conventional technology and its problems Traditionally, crystalline silicon (hereinafter referred to as 1.c-3
i), crystalline gallium arsenide (hereinafter referred to as 1′c-GaAs), amorphous silicon (hereinafter referred to as 1ζaSi), etc., and photovoltaic elements using these are well known.
しかるに、上記の光起電力素子のエネルギー・ギャップ
は例えばｃ−５ｉ、 ｃ−ＧａＡｓ１ａ−５ｉ各ノ＜ｌ
１１ｅＶ、 １．４３ ｅＶ、１．８ ｅＶと材料固有
であるため、光起電力素子として光を利用できる波長範
囲に自ら制約があった。殊に太陽光の如き広い波長範囲
を有する光を有効に電気としてとり出すにはエネルギー
ギヤノブが固有であることが高変候効率化の大きな妨げ
となっていた。However, the energy gap of the above photovoltaic device is, for example, c-5i, c-GaAs1a-5i, each node<l
Since the wavelengths are 11 eV, 1.43 eV, and 1.8 eV, which are specific to the material, there are limitations on the wavelength range in which light can be used as a photovoltaic device. In particular, the energy gear knob is unique in effectively extracting light with a wide wavelength range such as sunlight as electricity, which has been a major hindrance to achieving high climate change efficiency.
この問題点を解決するために発明者等は特願昭５７−２
０７３９５号において、１ａ−５ｉ を用いてなる光起
電力素子およびａ−３ｉ よりエネルギーギャップの小
さい半導体光起電力素子とを光学的に直列に接続構成す
る光起電力素子」を発明した。In order to solve this problem, the inventors filed a patent application No. 57-2.
In No. 07395, he invented a photovoltaic device in which a photovoltaic device using 1a-5i and a semiconductor photovoltaic device having a smaller energy gap than a-3i are optically connected in series.
しかしながら、前記特許出願に係る光起電力素子は、下
記に示す如き問題があった。第１図は特願昭５７−２０
７３９５号に係る光起電力素子の一例のエネルギーバン
ド図である。However, the photovoltaic device according to the patent application had the following problems. Figure 1 is a patent application filed in 1986-20.
FIG. 7 is an energy band diagram of an example of a photovoltaic device according to No. 7395.
第１図において、アモルファスシリコン光起電力素子１
と多結晶シリコン光起電力素子２が光学的に直列に接続
されており、アモルファスシリコン光起電力素子ｌは光
３０入射側から、ｎ型アモルファスシリコンＮ’ ２、
ｉ型アモルファスシリコンＡｊ１３、ｐ型アモルファス
シリコン層 Ｉ ４１： 構成されている。また、多結
晶シリコン光起電力素子２は、光３０入射側からｎ型ア
モルファスシリコン層Ｉ５、ｐ型多結晶シリコン層１６
で構成されている。ｐ型多結晶シリコン層は光吸収係数
が小さいため１０８以上の厚さを必要とする。このため
、多結晶シリコン光起電力素子２の中で光３の入射側か
らみて裏面の大半はエネルギーバンドの平担な領域が形
成される。従ってこの領域で光生成した電子８は、電子
６と同様にアモルファス光起電力素子１と多結晶シリコ
ン光起電力素子２の界面方向へ移動すべきであるが、前
記領域はエネルギーバンドが平担で、内ｉｑ１％電界が
形成されていないために逆方向に拡散し、裏面のＩＩｊ
結合中心Ｉ＋で正孔９と再結合し、キャリヤの収集効率
が低下するという問題があった。In FIG. 1, an amorphous silicon photovoltaic element 1
and a polycrystalline silicon photovoltaic element 2 are optically connected in series, and the amorphous silicon photovoltaic element l has n-type amorphous silicon N' 2,
I-type amorphous silicon Aj13, p-type amorphous silicon layer I41: Consisting of: In addition, the polycrystalline silicon photovoltaic element 2 includes an n-type amorphous silicon layer I5, a p-type polycrystalline silicon layer 16 from the light 30 incident side.
It is made up of. Since the p-type polycrystalline silicon layer has a small light absorption coefficient, it needs to have a thickness of 10 8 or more. For this reason, most of the back surface of the polycrystalline silicon photovoltaic element 2 when viewed from the incident side of the light 3 is formed as a region with a flat energy band. Therefore, like the electrons 6, the electrons 8 photogenerated in this region should move toward the interface between the amorphous photovoltaic device 1 and the polycrystalline silicon photovoltaic device 2, but the energy band in this region is flat. Since no inner iq1% electric field is formed, it diffuses in the opposite direction, and IIj on the back surface
There was a problem in that carriers were recombined with holes 9 at the bonding center I+, resulting in a decrease in carrier collection efficiency.
（発明の構成）
本発明は上記問題を解消し、光を電気に変換する変換効
率の高い光起電力素子を提供せんとするものである。本
発明は、アモルファス光起電力素子ふ・よびアモルファ
ス光起電力素子よりエネルギーギャップの小さい半導体
光起電内素ｆ−を光学的に直列に接続構成した光起電力
素子において、該半導体光起電力素子の光入射側からみ
て裏面に裏面近傍の半導体と同じ導電型でかつエイ、ル
ギーギャノプの大きな半導体層を形成したことをｑ、１
゛徴とする。半導体光起電力素子の材料はＳｉ、 Ｇｅ
、 ＧａＡｓ。(Structure of the Invention) The present invention aims to solve the above problems and provide a photovoltaic element with high conversion efficiency for converting light into electricity. The present invention provides a photovoltaic element in which an amorphous photovoltaic element f- and a semiconductor photovoltaic element f- having a smaller energy gap than the amorphous photovoltaic element are optically connected in series. When viewed from the light incident side of the element, a semiconductor layer of the same conductivity type as the semiconductor near the back surface and a large semiconductor layer of ray, lugyanop is formed on the back surface as q, 1.
It is a sign. The materials of semiconductor photovoltaic elements are Si, Ge
, GaAs.
ＧａＳｂ、 ＩｎＰ、 ＩｎＡｓ、 ＩｎＳｂ、 Ｃｄ
Ｔｅ、 ＰｂＴｅ、 Ｃｕ２Ｓ ｆｌどがあるが、価格
の点てシリコン特に多結晶シリコンが好ましい。GaSb, InP, InAs, InSb, Cd
There are Te, PbTe, Cu2S fl, etc., but silicon, especially polycrystalline silicon, is preferable from the viewpoint of cost.
また」二記各種４Ａ料の形状は板状でも良いし、セラミ
クスヤグラファイト等の板の上に形成した薄１罠状でも
構わない。さらに上記各種材料と接合を形成し半導体光
起電力素子の両端８５．３７を（１夕或する接合エイ；
・１は、本発明による光起電力素子の形成容易性から鑑
みてアモルファスシリコンが良す１゜特にエネルギーギ
ヤノブの大きな半導体を要する、３７０部分は、アモル
ファス半導体であることが、エネルギーギャップの大き
さから好ましい。ことにアモルファスシリコンが、光電
特性が良好であ、。Further, the shape of the various 4A materials described in 2.2 may be in the form of a plate, or may be in the form of a thin trap formed on a plate of ceramics, graphite, or the like. Furthermore, a bond is formed with the various materials mentioned above, and both ends 85.37 of the semiconductor photovoltaic element are bonded to each other.
・For 1, amorphous silicon is preferable in view of the ease of forming the photovoltaic device according to the present invention. 1゜ Particularly for the 370 part, which requires a large semiconductor for the energy gear knob, it is preferable to use an amorphous semiconductor because of the large energy gap. That's preferable. In particular, amorphous silicon has good photoelectric properties.
るために有効である。またｎｊｊ記エネルギーギヤツブ
の大きな半導体の活性化エネルギーは前記裏面近傍の半
導体の活性化エネルギー上り人きくなしＸことが、キャ
リヤの収集効率向上の点で効果的である。It is effective for Furthermore, the activation energy of the large semiconductor in the njj energy gear is greater than the activation energy of the semiconductor near the back surface, which is effective in improving carrier collection efficiency.
（実施例）
第２図を用いて基体的実施例を述べる。第２図の光起電
力素子はアモルファスシリコン光起電力素子２Ｉと多結
晶シリコン光起電力素ｆ・２２からなる。アモルファス
シリコン光起電力素ｆ・２１は従来素子と同様であるが
、多結晶シリコン素ｆ−２２は光２３の入射側からｎ型
７モル７７１９９３７層３５、ｐ型多結晶シリコンＪ（
，７３６、■）型アモルファスシリコン層３７で構成さ
れる。(Example) A basic example will be described using FIG. The photovoltaic device shown in FIG. 2 consists of an amorphous silicon photovoltaic device 2I and a polycrystalline silicon photovoltaic device f.22. The amorphous silicon photovoltaic element f-21 is similar to the conventional element, but the polycrystalline silicon element f-22 includes an n-type 7 mol 7719937 layer 35, a p-type polycrystalline silicon J (
, 736, ■) type amorphous silicon layer 37.
ｎ型７モル７７１９９３７層３５は、水素希釈しりＩ
Ｏ％濃度のシラン（５ｉＨ４）ガスと、水素希釈した５
００ｐｐｍ濃度のツメスフィン（ｐｎ３）ガスとをＳｉ
Ｈ４に対するＰＨ３の流量比が０５％になるように流し
、高周波放電により分解形成する。Ｊ放電１１ｒの圧力
は］ Ｔｏｒｒ、基板温度は２５０℃て形成時間は３０
分で１乱写は３０００Ａである。The n-type 7 mol 7719937 layer 35 is a hydrogen dilution layer I
0% concentration of silane (5iH4) gas and hydrogen diluted 5
Si
The flow rate of PH3 to H4 is 05%, and decomposition is performed by high frequency discharge. The pressure of the J discharge 11r was Torr, the substrate temperature was 250°C, and the formation time was 30
One shot per minute is 3000A.
ｐ型アモルファスシリコン層３７は、水素希釈したｌＯ
％濃度のシラン（ＳｉＨ４）ガスと、水−＋：品釈した
５ ００ ｐｐｍ 濃度のシボラフ （Ｂ２１−１６
）ガスとを、ＳｉＨ４に対する８ ２ Ｈ（Ｂの流量比
が０３％になるようにｉ＋ｉシＬ、ｌ’、’ｉｉ周波放
電により分解し形成する。放電１１１１の正方はｌ ’
ｌ’ｏｒｒ、基板／７１Ａ度は２５０℃で形成時間は５
分で膜厚は５００人である。ｐ型アモルファスシリコン
層３７のエネルギーギャップは１．７ ｅＶでｐ増多結
晶シワ３フ
（＋．＋ｅＶ） より大きい。また、ｐ型アモルファス
シリコン）”Ｊ ３ ７の活性化エネルギーは０．１８
ｅＶでｐ型多結晶シリコン層３６の活性化エネルギー（
０．２５ｅＶ）より小さい。The p-type amorphous silicon layer 37 is made of lO diluted with hydrogen.
% concentration of silane (SiH4) gas and water-+: 500 ppm concentration of Siboraf (B21-16
) gas is decomposed and formed by i + i L, l', 'ii frequency discharge so that the flow rate ratio of 8 2 H (B to SiH4 is 03%. The square of the discharge 1111 is l'
l'orr, substrate/71A degree is 250℃ and formation time is 5
The film thickness is 500 people per minute. The energy gap of the p-type amorphous silicon layer 37 is 1.7 eV, which is larger than the p-multiplying crystal wrinkle 3 (+.+eV). In addition, the activation energy of p-type amorphous silicon) "J 3 7 is 0.18
Activation energy of p-type polycrystalline silicon layer 36 in eV (
0.25 eV).
上記構造で構成することにより、ｐ型多結晶シリコンＫ
ｊ ３ ６内で光生成した電子２８は、若し、光２３０
人躬側から見て裏面へ拡散してもｐ型アモルファスシリ
コン層３７でプロノキンクサレルため再結合中心３１で
再結合することはない。By configuring the above structure, p-type polycrystalline silicon K
If the electrons 28 photogenerated in j 3 6, the light 230
Even if it diffuses to the back side when viewed from the side, it does not recombine at the recombination center 31 because it is propagated in the p-type amorphous silicon layer 37.
次に本発明による光起電力素子と特願昭５７−２０７３
９５号において開示した光起電力素子の特性を第１表に
示す。Next, the photovoltaic device according to the present invention and patent application No. 57-2073
Table 1 shows the characteristics of the photovoltaic device disclosed in No. 95.
第１表
第１表に示した如く、光起電力素子の４１性の中で、短
絡電流密度が大きく増加して」っ・りその結果光電変換
効率が増大している。As shown in Table 1, among the 41 characteristics of photovoltaic devices, the short circuit current density increases significantly, and as a result, the photoelectric conversion efficiency increases.
なお実施例では、光入射側よりｎ型，Ｉ型およびｐ 型
アモルファスシリコンＸＲで’ｒＩＩ’ｊ 成り． ｋ
アモルファスシリコン光起電力素子と、光入射側よりｎ
型アモルファスシリコンＪＲ 、ｐ 型多結晶シリコン
Ｊ・コおよびｐ型アモルファスシリコンＪ’＋’Ｊで構
成した多結晶シリコン光起電力素子を光学的に直列に接
続した構造について説明したが、導電型をすべて逆にし
て、アモルファスシリコン光起電力素ｆ−を光入射側よ
りｐ型，Ｉ型ふ・よびｎ型アモルファスシリコン層で第
１釣戊し、多結晶シリコン光起電力素ｆ−を光入射側よ
りｐ型アモルファスシリコン八′づ、１１ノＶ’！ 多
＆−： 晶シリコン層、ｎ型アモルファスシリコン層で
４．ｉ，７成しても良い。In the example, 'rII'j is formed of n-type, I-type and p-type amorphous silicon XR from the light incident side. k
Amorphous silicon photovoltaic element and n from the light incidence side
Although we have described a structure in which polycrystalline silicon photovoltaic elements composed of type amorphous silicon JR, p-type polycrystalline silicon J-co, and p-type amorphous silicon J'+'J are optically connected in series, the conductivity type Reversing everything, the amorphous silicon photovoltaic element f- is first suspended from the light incident side with the p-type, I-type, and n-type amorphous silicon layers, and the polycrystalline silicon photovoltaic element f- is incident on the light. From the side, p-type amorphous silicon 8', 11 V'! Poly &-: 4. Crystalline silicon layer, n-type amorphous silicon layer. i,7 may be formed.
（発明の効果）
上述の如く、本発明により、アモルファスシリコンより
エネルギーギャップの小さい半導体光起電力素子の裏面
における再結合が防止され、キ４・リヤの収集効率が向
上する結果、短絡電流密度ひいては光電変換効率が向上
する。(Effects of the Invention) As described above, according to the present invention, recombination on the back surface of a semiconductor photovoltaic element, which has a smaller energy gap than amorphous silicon, is prevented, and as a result, the collection efficiency of K4 and Riya is improved, and as a result, the short circuit current density and eventually Photoelectric conversion efficiency is improved.
第１図は特願昭５７−２０７３９５号において開示して
光起電力素子のエネルギーバンド図であり、第２図は本
発明による光起電力素子の一実施例である。
１、２１ アモルファスシリコン光起Ｎ 力素子、２、
２２ 多結晶シリコン光起電力素子、３，２３光、４，
６， ８， ２４， ２６． ２８・電子、５， ７
， ９。
２５、 ２７， ２９ 正孔、１０，’ ＩＩ， ３０
． ３１・再結合中心、Ｉ ２， ３ ２ − ｎ型ア
モルファスシリコン層、１３、３３−ｉ型アモルファス
シリコンノ＠， １４， ３４１）型アモルファスシリ
コン層、ｌ ５， ３ ５ − ｎ型アモルファスシリ
コンＪ’Ｊ’Ｊ 、ｌ ６ ＋ ３ ６ ”’ ｐ 増
多ｉ’，＋’＋ 品シリコン層、３ ７ − ｐ ９ア
モルファスンリコン）ン″，：。
代理人弁理士上・代哲司７′イFIG. 1 is an energy band diagram of a photovoltaic device disclosed in Japanese Patent Application No. 57-207395, and FIG. 2 is an embodiment of the photovoltaic device according to the present invention. 1, 21 Amorphous silicon photovoltaic N-force element, 2,
22 Polycrystalline silicon photovoltaic device, 3, 23 light, 4,
6, 8, 24, 26. 28・Electron, 5, 7
, 9. 25, 27, 29 hole, 10,' II, 30
．． 31. Recombination center, I 2, 3 2 - n-type amorphous silicon layer, 13, 33- i-type amorphous silicon @, 14, 341) type amorphous silicon layer, l 5, 3 5 - n-type amorphous silicon J'J'J, l 6 + 3 6 ''p multiplication i', +'+ product silicon layer, 3 7 - p 9 amorphous silicon layer'',:. Representative Patent Attorney Senior Tetsuji Dai 7'I
Claims (4)
シリコンよりエネルギーギャップの小さい半導体光起電
力素子を光学的に直列に接続構成した光起電力素子にお
いて、該半導体光起電力素子の光入射側から見て裏面に
、裏面近傍の半導体と同じ導電型でかつ該半導体光起電
力素子より大きなエネルギーギャップを有する半導体層
を有する光起電力素子。(1) In a photovoltaic device in which an amorphous photovoltaic device and a semiconductor photovoltaic device having a smaller energy gap than amorphous silicon are optically connected in series, from the light incidence side of the semiconductor photovoltaic device. A photovoltaic device having a semiconductor layer on a back surface, as seen, having the same conductivity type as a semiconductor near the back surface and having a larger energy gap than the semiconductor photovoltaic device.
とを特徴とする特許請求の範囲第（＋）項記載の光起電
力素子。(2) The photovoltaic device according to claim 1, wherein the semiconductor photovoltaic device is made of polycrystalline silicon.
ァス半導体であることを特徴とする特許請求の範囲第（
１）項記載の光起電力素子。(3) Claim No. 3, characterized in that the large semiconductor layer of the energy gear knob is an amorphous semiconductor.
The photovoltaic device according to item 1).
ルギーギヤノブの大きな半導体層の活性化エネルギーよ
り大きくないことを１４’、ｉ：徴とする３、１°詐１
．請求の範囲第（１）項記載の光起電力素子。(4) The activation energy of the semiconductor photovoltaic element is not greater than the activation energy of the large semiconductor layer of the energy gear knob.
．． A photovoltaic device according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59008350A JPS60152078A (en) | 1984-01-19 | 1984-01-19 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59008350A JPS60152078A (en) | 1984-01-19 | 1984-01-19 | Photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60152078A true JPS60152078A (en) | 1985-08-10 |
Family
ID=11690772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59008350A Pending JPS60152078A (en) | 1984-01-19 | 1984-01-19 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60152078A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2648624A1 (en) * | 1989-06-16 | 1990-12-21 | Canon Kk | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
-
1984
- 1984-01-19 JP JP59008350A patent/JPS60152078A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2648624A1 (en) * | 1989-06-16 | 1990-12-21 | Canon Kk | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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