JPS60152034A - Method for flash removal - Google Patents
Method for flash removalInfo
- Publication number
- JPS60152034A JPS60152034A JP714284A JP714284A JPS60152034A JP S60152034 A JPS60152034 A JP S60152034A JP 714284 A JP714284 A JP 714284A JP 714284 A JP714284 A JP 714284A JP S60152034 A JPS60152034 A JP S60152034A
- Authority
- JP
- Japan
- Prior art keywords
- guide rails
- tank
- semiconductor device
- flashes
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims description 6
- 238000007790 scraping Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 238000011084 recovery Methods 0.000 abstract description 8
- 239000000047 product Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013312 flour Nutrition 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 240000007049 Juglans regia Species 0.000 description 1
- 235000009496 Juglans regia Nutrition 0.000 description 1
- 208000034809 Product contamination Diseases 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000020234 walnut Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は、ぼり取り技術、特に、成形品のぼりを取り技
術に関し、たとえば、半導体装置の樹脂封止パッケージ
や低融点ガラスを用いたパンケージにおけるばりを除去
するのに利用して有効な技術に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to a burr removal technique, in particular a technique for removing burrs from molded products, such as removing burrs from resin-sealed packages of semiconductor devices and pancakes using low-melting glass. Concerning effective techniques that can be used to
［背景技術］
半導体装置の製造において、樹脂封止パッケージに発生
したばりを除去する場合、くるみ粉やあんず粉等の微粉
末を高速でぼりに吹き付けて除去する方法や、水または
水に微粉末を混合してなる混合水をぼりに上方から吹き
付けて除去する方法が考えられる。[Background technology] When removing burrs generated on resin-sealed packages in the manufacture of semiconductor devices, there are methods of removing burrs by spraying fine powder such as walnut flour or apricot flour on the burrs at high speed, or removing burrs with water or water. One possible method is to spray mixed water from above onto the streamer to remove it.
しかし、微粉末を吹き付ける方法においては、微粉末が
周囲に飛散しかつ騒音が激しいため、作業環境が低下し
てしまい、しかも、微粉末が製品を損傷したり付着した
りするため、後処理が必要となるという問題点が、また
、混合水を吹き付ける方法においては、混合率の管理が
困難であり、水溶液が飛散し、かつ製品の内部に水分が
侵入してしまうという問題点があることが、本発明者に
よって明らかにされた。However, in the method of spraying fine powder, the fine powder scatters around and makes a lot of noise, which degrades the working environment.Furthermore, the fine powder can damage or adhere to the product, so post-processing is required. In addition, in the method of spraying mixed water, it is difficult to control the mixing ratio, and there are problems in that the aqueous solution scatters and moisture enters the inside of the product. , was revealed by the present inventor.
［発明の目的コ
本発明の目的は、作業環境が良好で、製品の汚染や耐湿
性の低下が防止できるぼり取り技術を提供することにあ
る。[Purpose of the Invention] An object of the present invention is to provide a scraping technique that provides a good working environment and prevents product contamination and deterioration of moisture resistance.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
し発明の概要］
本願におい−Ｃ開示される発明のうら代表的なものの概
要を簡単に説明すれば、次の通りである。Summary of the Invention] A brief summary of the representative inventions disclosed in the present application is as follows.
すなわち、気化し易い液体をぼりに吹き（」けて除去す
るようにすることにより、微粉末の飛散や騒音の発生を
回避し、かつ、製品の内部に水分が侵入することを抑止
するようにしたものである。In other words, by blowing liquids that easily evaporate to remove them, it is possible to avoid the scattering of fine powder and the generation of noise, and to prevent moisture from entering the inside of the product. This is what I did.
［実施例］
第１図は本発明のぼり取り技術の一実施例を説明するた
めの概略系統図であり、第２図は拡大部分正面図である
。[Example] Fig. 1 is a schematic system diagram for explaining an embodiment of the rip-off technique of the present invention, and Fig. 2 is an enlarged partial front view.
本実施例において、このぼり取り装置は、半導体装置ｌ
におりるレジンモールドされてなる樹脂封止パッケージ
２の外周においてリードフレーム３の表面およびダム４
との間等に発生したばり５を除去するものとして、構成
されている。In this embodiment, this scraping device is a semiconductor device l.
The surface of the lead frame 3 and the dam 4 are located on the outer periphery of the resin-molded package 2.
It is configured to remove burrs 5 generated between the two.
この装置はほぼ密閉された槽６を備えており、槽６内に
は一対のガイドレール７が敷設されている。ガイドレー
ル７間は、半導体装置１がリードフレーム３を架橋した
状態で摺動自在に支持するようになっており、半導体装
置１を適当な手段（図示せず）により搬送させるように
なっている。This device includes a tank 6 that is substantially sealed, and a pair of guide rails 7 are installed inside the tank 6. Between the guide rails 7, the semiconductor device 1 is configured to slidably support the lead frame 3 in a bridged state, and the semiconductor device 1 is transported by appropriate means (not shown). .
ガイドレール７間の上下には複数本のノズル８が半導体
装置１にお＆３るパッケージ２のばり５に噴射１コを対
向するようにそれぞれ配設されており、各ノズル８には
、気化し易い液体としての炭化水素のフルオルクロル置
換体（以下、液という）９を供給する供給路１０が接続
されている。この供給路１０はポンプ１１を介してタン
ク１２に接続されている。A plurality of nozzles 8 are disposed above and below between the guide rails 7 so as to direct one spray to the burr 5 of the package 2 attached to the semiconductor device 1. A supply path 10 for supplying a fluorochloro-substituted hydrocarbon (hereinafter referred to as liquid) 9 as a free liquid is connected thereto. This supply path 10 is connected to a tank 12 via a pump 11.
槽６の天井壁にはガス回収ｌ」１３が開設され、この回
収口１３には回収路１４が接続されている。A gas recovery port 13 is provided on the ceiling wall of the tank 6, and a recovery path 14 is connected to this recovery port 13.
［ＪＩＩｌ １４は、コンプレッサ１５、コンデン″１
１′１６を介してタンク１２に接続されている。[JIIl 14 is compressor 15, condenser'' 1
1'16 to tank 12.
次に作用を説明する。Next, the action will be explained.
１ｉｌｌ送されて来た半導体装置１はそのパッケージ２
の外周において発生したばり５に対し、」ユニ両方に配
置した各ノズル８から液９を高速、高圧で吹きイ１けら
れる。液９を吹き付レノられると、その衝撃により、ば
り５はリードフレーム３の表面およびダム４との間から
容易に剥１’ｉｌｊされ、パッケージ３から除去される
。このとき、ｌ＆ ９は液状であるため、必要な質量を
有するにもかかわらず、パッケージ２やリードフレーム
３を損傷することはな（、また、わ）末のようにダム４
との間に詰ることもない。1ill The semiconductor device 1 that was sent is its package 2.
A liquid 9 is sprayed at high speed and high pressure from each nozzle 8 arranged on both sides of the burr 5 generated on the outer periphery of the burr. When the liquid 9 is sprayed, the impact causes the burrs 5 to be easily peeled off from between the surface of the lead frame 3 and the dam 4, and removed from the package 3. At this time, since l&9 is in a liquid state, it does not damage the package 2 or lead frame 3, even though it has the necessary mass.
There is no need to get stuck between the two.
吹き付りられた液９は槽６の雰囲気温度で迅速に気化し
て殆ど全てガス状になる。したがって、液９がパッケー
ジ２の内部に浸透して半導体装置１の機１１℃をｆｉ′
Ｊなうという危惧は全くない。The sprayed liquid 9 quickly vaporizes at the ambient temperature of the tank 6 and becomes almost entirely gaseous. Therefore, the liquid 9 permeates into the inside of the package 2 and heats the semiconductor device 1 at 11°C.
There is no fear that this will happen.
気化した炭化水素のフルオルクロル置換体（以下、単に
ガス９ａという）は回収口１３により吸い出され、コン
プレッサ１５、二１ンデンサ１６を経゛Ｃ液化されタン
ク１２に回収される。タンク１２において、液９は気液
分離され、再循環することになる。The vaporized fluorochloro-substituted hydrocarbon (hereinafter simply referred to as gas 9a) is sucked out through a recovery port 13, liquefied by C through a compressor 15 and an indenser 16, and recovered into a tank 12. In the tank 12, the liquid 9 will be separated into gas and liquid and recirculated.
［効果］
（１）、気化し易い液体を吹きイ］けてばりを除去する
ことにより、微粉末の吹き伺けの場合に発生ずる微粉末
の飛散や騒音の発生が回避できるため、作業環境が向上
でき、また、成形品の損傷や汚染がないため、後処理が
省略ないしは簡略化できる。[Effects] (1) Blowing liquids that easily vaporize] By removing the burrs, it is possible to avoid the scattering of fine powder and the generation of noise that would occur when fine powder is blown, improving the working environment. In addition, since there is no damage or contamination of the molded product, post-processing can be omitted or simplified.
（２）、気化し易い液体を吹き付けることにより、水分
が成形品の内部に浸透することが防止できる。(2) By spraying a liquid that easily evaporates, it is possible to prevent moisture from penetrating into the molded product.
（３）、水分の浸透が防止できるため、半導体装置のぼ
り取りに使用した場合、半導体装置の信頼性を向上する
ことができる。すなわち、水分の浸透は直ちに半導体装
置の機能をＩｎなわずに使用中に障害を発生する傾向が
あるため、信頼性の低下の原因となる。(3) Since penetration of moisture can be prevented, the reliability of the semiconductor device can be improved when used for scraping off the semiconductor device. That is, the penetration of moisture immediately impairs the functionality of the semiconductor device and tends to cause trouble during use, resulting in a decrease in reliability.
（４）、液体を吹き付Ｉするノズルを、ぼり除去すべき
試料の上下両方向に配置し、除去すべきぼりに対し、上
方向からと下方向から噴射液体により射撃するので、取
り除きがたいぼりであっても完全にそのばりを取り除く
ことができる。(4) Nozzles for spraying liquid are arranged both above and below the sample to be removed, and the liquid is sprayed from above and below at the stream to be removed, so that no stream that cannot be removed can be removed. However, the burr can be completely removed.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることばいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. do not have.
ぼりに吹きイ【１りる気化し易い液体は、炭化水素のフ
ルオルクロル置換体に限らず、アルコール、アセトン等
のような揮発性の良好な液体およびこれらと水との混合
溶液や、窒素（Ｎ２）等安く安定なガス等を使用しても
よい。ガスは吹きイ」け時に液化しておくと、十分なｆ
Ｐ７撃力が得られるので、吹き付り時に液状で迅速に気
化するものであることが望ましい。Liquids that easily vaporize are not limited to fluorochloro-substituted hydrocarbons, but also highly volatile liquids such as alcohol and acetone, mixed solutions of these and water, and nitrogen (N2). ) and other cheap and stable gases may be used. If the gas is liquefied at the time of blowing, sufficient f
Since a P7 impact force can be obtained, it is desirable that the spray be in a liquid state and quickly vaporize when sprayed.
なお、水とアルコールとの混合液を使用した場合、水は
アルコールの揮発により気化され易くなるので、成形品
内部への浸透は殆ど抑止される。Note that when a mixed solution of water and alcohol is used, the water is easily vaporized due to volatilization of the alcohol, so that penetration into the interior of the molded product is almost inhibited.
ノズルの数、吹き付は方向、配置、構造等に限定はない
。There are no limitations on the number of nozzles, the spray direction, arrangement, structure, etc.
［利用分野］
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である樹脂封止パッケージ
におけるばりの除去に通用した場合について説明したが
、それに限定されるものではなく、たとえば、ハーメチ
ックパッケージにおける低融点ガラスに発生ずるばりの
除去や、その他、樹脂や低融点ガラスを用いた成形品、
封止切におけるばりの除去等に適用できる。[Field of Application] In the above explanation, the invention made by the present inventor was mainly explained in the case where it was applied to the field of application which was the background of the invention, which was the removal of burrs in resin-sealed packages, but the present invention is not limited thereto. For example, removing burrs from low melting point glass in hermetic packages, molded products using resin or low melting point glass, etc.
It can be applied to removing burrs during seal cutting.
第１図は本発明のぼり取り方法の一実施例を説明するた
めの系統図、
第２図は拡大部分正面図である。
１・・・半導体装置、２・・・パッケージ、３・・・リ
ードフレーム、４・・・ダム、５・・・ぼり、６・・・
槽、７・・・ガイドレール、８・・・ノズル、９・・・
炭化水素のフルオルクロル置換体、１０・・・流体供給
路、１１・・・ポンプ、１２・・・タンク、１３・・・
回収口、１４・・・回収路、１５・・・コンプレッサ、
１６・・・コンデンサ。FIG. 1 is a system diagram for explaining one embodiment of the defrauding method of the present invention, and FIG. 2 is an enlarged partial front view. DESCRIPTION OF SYMBOLS 1...Semiconductor device, 2...Package, 3...Lead frame, 4...Dam, 5...Bori, 6...
Tank, 7... Guide rail, 8... Nozzle, 9...
Fluorochloro-substituted hydrocarbon, 10...Fluid supply path, 11...Pump, 12...Tank, 13...
Recovery port, 14... recovery path, 15... compressor,
16... Capacitor.
Claims (1)
除去することを特徴とするぼり取り方法。 ２、液体は、炭化水素のフルオルクロル置換体であるこ
とを特徴とする特許請求の範囲第１項記載のぼり取り方
法。 ３、液体の吹き付けは、成形品のぼりに対し少なくとも
上方向および下方向の２方向から行うことを特徴とする
特許請求の範囲第１項記載のぼり取り方法。[Claims] (1) A method for removing burrs, which comprises spraying a liquid that easily vaporizes onto the burrs of a molded product to remove burrs. 2. The scraping method according to claim 1, wherein the liquid is a fluorochloro-substituted hydrocarbon. 3. The method of claim 1, characterized in that the liquid is sprayed onto the molded product banner from at least two directions, upward and downward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714284A JPS60152034A (en) | 1984-01-20 | 1984-01-20 | Method for flash removal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714284A JPS60152034A (en) | 1984-01-20 | 1984-01-20 | Method for flash removal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60152034A true JPS60152034A (en) | 1985-08-10 |
Family
ID=11657820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP714284A Pending JPS60152034A (en) | 1984-01-20 | 1984-01-20 | Method for flash removal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60152034A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386529A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Flash removing device for resin-sealed semiconductor |
| US6178610B1 (en) * | 1997-09-11 | 2001-01-30 | Piller Entgrattenchnik Gmbh | Method of and apparatus for removing burrs from metal work-piece |
-
1984
- 1984-01-20 JP JP714284A patent/JPS60152034A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386529A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Flash removing device for resin-sealed semiconductor |
| US6178610B1 (en) * | 1997-09-11 | 2001-01-30 | Piller Entgrattenchnik Gmbh | Method of and apparatus for removing burrs from metal work-piece |
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