JPS60150614A - Manufacture of magnetic thin film - Google Patents
Manufacture of magnetic thin filmInfo
- Publication number
- JPS60150614A JPS60150614A JP613484A JP613484A JPS60150614A JP S60150614 A JPS60150614 A JP S60150614A JP 613484 A JP613484 A JP 613484A JP 613484 A JP613484 A JP 613484A JP S60150614 A JPS60150614 A JP S60150614A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- rare earth
- amorphous
- magnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/16—Layers for recording by changing the magnetic properties, e.g. for Curie-point-writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10591—Details for improving write-in properties, e.g. Curie-point temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
Abstract
Description
【発明の詳細な説明】
本発明は、磁性薄膜の製造方法に関し、より詳細には磁
気記録及び光熱磁気記録材料として用いて好適な希土類
鉄ガーネット”ｔＶＪ膜の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a magnetic thin film, and more particularly to a method for manufacturing a rare earth iron garnet "tVJ" film suitable for use as a magnetic recording and photothermal magnetic recording material.
近年、希土類鉄ガーネットＲ３（Ｆｅ、Ｍ）ｓ Ｏ＋ｉ
（Ｒ：希土類元素、Ｍ：八１３１、Ｇａ”、Ｓｃ ３
＊、Ｔ１３４、（Ｇｏ” ＋Ｈ４＋）など）のＲの一部
をＢｉで置換した鉄ガーネットＲ３−Ｘ Ｂｉｇ （Ｆ
ｅ、Ｍ）５０ ＋ｚが注目されている。このＢｉ置換希
土類鉄ガーネットは、Ｒの一部をＢｉで置換することに
より、吸収係数αをあまり大きくすることなくファラデ
ー回転角θ。In recent years, rare earth iron garnet R3 (Fe, M)s O+i
(R: rare earth element, M: 8131, Ga", Sc 3
Iron garnet R3-X Big (F
e, M) 50 +z is attracting attention. This Bi-substituted rare earth iron garnet has a Faraday rotation angle θ without increasing the absorption coefficient α too much by replacing a part of R with Bi.
を大きくすることができるという性質を有し、光熱磁気
記録材料として一般に優れたものである。It has the property of being able to increase the temperature, and is generally excellent as a photothermal magnetic recording material.
このような性質を有するＢｉ置換希土類鉄ガーネットの
光熱磁気記録材料としての性能を高めるためには、Ｂｉ
置換量Ｘを大きくしてファラデー回転角θ、を大きくす
ればよいが、従来の液相エピタキシャル法等の製造方法
ではＢｉ置換１ｉｘが大きいＢｉ置換希土類鉄ガーネッ
ト薄膜を製造することは困難であった。In order to improve the performance of Bi-substituted rare earth iron garnet having such properties as a photothermal magnetic recording material, Bi
Although it is possible to increase the Faraday rotation angle θ by increasing the substitution amount .
本発明者等は、特願昭５８−２１６７５０号において、
固溶限界（−二面体位置の５０％）までＢｉが固溶して
いる高濃度Ｂｉ置換希土類鉄ガーネット単結晶薄膜をス
パッタリング法によりＧＧＧ基板上にエピタキシャル成
長させることのできる磁性薄膜の製造方法を提案した。The present inventors, in Japanese Patent Application No. 58-216750,
We propose a manufacturing method for a magnetic thin film that can epitaxially grow a highly concentrated Bi-substituted rare earth iron garnet single crystal thin film on a GGG substrate by sputtering, in which Bi is dissolved in solid solution up to the solid solution limit (50% of the -dihedral position). did.
しかし、この製造方法は、用いることのできる基板がＧ
ＧＧ基板に限定されてしまう点で不利であるため、例え
ばガラス基板等の非晶質基板上に高湯度Ｂｉ置換希土頻
鉄ガーネット薄膜を形成することのできる製造方法が望
まれていた。However, in this manufacturing method, the substrate that can be used is G.
Since this method is disadvantageous in that it is limited to GG substrates, a manufacturing method that can form a high-temperature Bi-substituted rare earth garnet thin film on an amorphous substrate such as a glass substrate has been desired.
このような要求は上記以外の希土類鉄ガーネット１膜に
ついても従来からあり、種々の試みがなされている。し
かしながら、現在までに得られている薄膜はその面と平
行な方向に磁化が存在する多結晶の面内磁化膜であり、
磁気記録及び光熱磁気記録材料として好ましい垂直磁化
膜は未だ得られていない。また特にＢｉ置換希土類鉄ガ
ーネット垂直磁化膜を非晶質基板上に形成する試みは全
くなされていないのが現状である。Such requirements have been conventionally met for rare earth iron garnet films other than those mentioned above, and various attempts have been made. However, the thin films obtained to date are polycrystalline in-plane magnetized films with magnetization in the direction parallel to the plane.
A perpendicularly magnetized film suitable for magnetic recording and photothermal magnetic recording materials has not yet been obtained. Furthermore, at present, no attempt has been made to form a Bi-substituted rare earth iron garnet perpendicularly magnetized film on an amorphous substrate.
本発明は、上述の問題にかんがみ、良好な垂直磁化特性
を有する旧置換希土類鉄ガーネット薄膜等の希土類鉄ガ
ーネット薄１模を非晶質基板等の種々の基板上に形成す
ることのできる磁性薄膜の製造方法を提供することを目
的とする。In view of the above-mentioned problems, the present invention provides a magnetic thin film in which a rare earth iron garnet thin film such as a previously substituted rare earth iron garnet thin film having good perpendicular magnetization characteristics can be formed on various substrates such as an amorphous substrate. The purpose is to provide a manufacturing method for.
即ち１本発明に係る磁性薄膜の製造方法は、所定の基板
上に非晶質の希土類鉄ガーネット薄膜を気相成長法によ
り形成し、上記非晶質の希土類鉄ガーネット薄膜上に保
護膜を形成し２次いで熱処理を行うことにより上記非晶
質の希土類鉄ガーネット薄膜を結晶化させるようにして
いる。このようにすることによって、結晶化のための熱
処理による悪影響を防止することができ、極めて良好な
垂直磁化特性を有する磁性薄膜を製造することができる
。また磁性薄膜を形成すべき基板の材質を種々に選ぶこ
とができるので、製造上極めて好都合である。That is, 1. The method for producing a magnetic thin film according to the present invention includes forming an amorphous rare earth iron garnet thin film on a predetermined substrate by a vapor phase growth method, and forming a protective film on the amorphous rare earth iron garnet thin film. Second, heat treatment is performed to crystallize the amorphous rare earth iron garnet thin film. By doing so, it is possible to prevent the adverse effects of heat treatment for crystallization, and it is possible to produce a magnetic thin film having extremely good perpendicular magnetization characteristics. Furthermore, since the material of the substrate on which the magnetic thin film is to be formed can be selected from various materials, it is extremely convenient in terms of manufacturing.
以下本発明に係る磁性薄膜の製造方法を（Ｙ、旧）３（
Ｆｅ＋ ＡＩ）ｓ Ｏ＋ｚ で表されるＢｉ置換希土類
鉄ガーネットの薄膜の製造に適用した一実施例につき図
面を参照しながら説明する。なおこの（Ｙ、Ｂｉ）ｓ（
Ｆｅ、＾１）ｓ Ｏ＋ｚは、イ・７トリウム鉄ガーネツ
トＹ ３ Ｆｅ ｓ Ｏ＋ｗ （Ｙ ＩＧ）において、
Ｙの一部をＢｔで置換すると共にＦｅの一部を旧で置換
したものであり、前者は吸収係数αをあまり増大するこ
となくファラデー回転角θ、を高め、後者は吸収係数α
を減少させると共に飽和磁化を小さくして垂直磁化膜を
得られやすくし、またキュリ一温度も下げることが知ら
れている。The method for manufacturing a magnetic thin film according to the present invention will be described below (Y, old) 3 (
An example applied to the production of a thin film of Bi-substituted rare earth iron garnet represented by Fe+AI)sO+z will be described with reference to the drawings. Note that this (Y, Bi)s(
Fe, ^1) s O+z is I.7thorium iron garnet Y 3 Fe s O+w (Y IG),
A part of Y is replaced with Bt and a part of Fe is replaced with old. The former increases the Faraday rotation angle θ without increasing the absorption coefficient α much, and the latter increases the absorption coefficient α.
It is known that this method reduces the saturation magnetization and makes it easier to obtain a perpendicularly magnetized film, and also lowers the Curie temperature.
まず第１Ａ図に示すように、高周波（ＲＦ）スパッタリ
ング装置のステンレス製の電極板（試料台）ｌの上に石
英ガラス基板２を載置すると共に、電極板３に第１のタ
ーゲット４を取り付ける。なおこの第１のターゲット４
は、組成式 Ｂｉ 、、。First, as shown in FIG. 1A, a quartz glass substrate 2 is placed on a stainless steel electrode plate (sample stage) l of a radio frequency (RF) sputtering device, and a first target 4 is attached to the electrode plate 3. . Note that this first target 4
has the compositional formula Bi.
Ｙ＋、ｏｌンｅ ＊、ｓ ４１ ＨｌＺ ＯＩ２で表さ
れる多結晶状の鉄ガーネットの円盤状の焼結体から成る
。It consists of a disc-shaped sintered body of polycrystalline iron garnet represented by Y+, ol*, s 41 HlZ OI2.
次にスパッタリング装置内を所定の真空度に排気した後
、このスパッタリング装置内にＡｒと０２との混合ガス
（Ａｒ：Ｏｚ −９：１） を７ Ｐａ程度まで導入す
る。真空度が安定した状態で、電極板１と電極板３との
間に所定の高周波電圧を印加してグロー放電を開始させ
る。この放電で生したＡｒ’イオンは第１のターゲット
４の表面をスパッタし、このスパッタにより上記第１の
ターゲット４から旧、 Ｙ 、 Ｐｅ、＾Ｉ、 Ｏ等の
原子が離脱する。これらの離脱した原子は、電極板ｌを
介してヒータ５により例えば４４０℃に加熱されている
石英ガラス基板２上に被着し、この石英ガラス基板２上
に（Ｙ、Ｂｉ）ｓ （Ｆｅ、ＡＩ） ｓ Ｏ＋ｔの非晶
質薄膜（以下薄膜と称する）６が形成される。なおスパ
ッタに用いる電力をｌｌ０Ｗとし、またスパッタ時間を
２時間３０分とした場合、得られた薄膜６の厚さは０．
８μｍであった・
次に第１Ｂ図に示すように、電極板１に取り付けられて
いる第１のターゲット４をＳｔ ０２から成る第２のタ
ーゲット７と交換した後、再びスパッタリング装置内を
所定の真空度に排気し、次にこのスパッタリング装置内
にＡｒと ０２との混合ガス（＾ｒ：０□−９：１）
を７ Ｐａ程度まで導入する。真空度が安定した状態で
、電極板１と電極板３との間に所定の高周波電圧を印加
してグロー放電を開始させる。この結果、薄膜６上にＳ
ｉ ０２膜８が形成される。なおこの際、石英ガラス＆
板２は室温に保持する。またスパッタに用いる電力を２
００Ｗとし、またスパッタ時間を３０分とした場合、得
られたＳｔ ０２膜８の厚さは０．５μｍであった。Next, after evacuating the inside of the sputtering apparatus to a predetermined degree of vacuum, a mixed gas of Ar and 02 (Ar:Oz -9:1) is introduced into the sputtering apparatus up to about 7 Pa. With the degree of vacuum stable, a predetermined high frequency voltage is applied between the electrode plates 1 and 3 to start glow discharge. Ar' ions generated by this discharge sputter the surface of the first target 4, and atoms such as old, Y, Pe, ^I, and O are separated from the first target 4 by this sputtering. These detached atoms adhere to the quartz glass substrate 2 which is heated to, for example, 440° C. by the heater 5 via the electrode plate 1, and (Y, Bi)s (Fe, AI) An amorphous thin film (hereinafter referred to as thin film) 6 of s O+t is formed. Note that when the power used for sputtering is 10W and the sputtering time is 2 hours and 30 minutes, the thickness of the obtained thin film 6 is 0.
Next, as shown in FIG. 1B, after replacing the first target 4 attached to the electrode plate 1 with the second target 7 made of St 02, the inside of the sputtering apparatus was again set at a predetermined position. After evacuating to a vacuum level, a mixed gas of Ar and 02 (^r:0□-9:1) was placed inside this sputtering device.
will be introduced up to about 7 Pa. With the degree of vacuum stable, a predetermined high frequency voltage is applied between the electrode plates 1 and 3 to start glow discharge. As a result, S
An i02 film 8 is formed. At this time, quartz glass &
Plate 2 is kept at room temperature. Also, the power used for sputtering is 2
When the power was 00W and the sputtering time was 30 minutes, the thickness of the obtained St 02 film 8 was 0.5 μm.
次に上述のように形成された石英ガラス基板２、薄膜６
及びＳｉ Ｏ□１模８から成る三層構造の試料を空気中
において７００℃、３時間の条件で熱処理して磁性薄膜
の製造を終了する。Next, the quartz glass substrate 2 and thin film 6 formed as described above
A sample with a three-layer structure consisting of SiO□1 and 8 was heat-treated in air at 700° C. for 3 hours to complete the production of the magnetic thin film.
なお本実施例においては、Ｓｉ （１２膜８から成る保
護膜の存在によって上記熱処理中に薄膜６中に含有され
ているＢｔ等の薄膜構成原子が外方拡散（アウトディフ
ュージョン）すること及び膜面の荒れを防止することが
できると共に、薄１１９６の結晶粒の成長を抑えること
ができる。In this example, due to the presence of the protective film composed of the Si (12 film 8), the atoms constituting the thin film such as Bt contained in the thin film 6 will outdiffusion during the heat treatment, and the film surface It is possible to prevent the roughness of the 1196 crystal grains and to suppress the growth of thin 1196 crystal grains.
上述の実施例により製造された薄膜６の結晶性をＸ線回
折により調べたところ、優勢方位のない多結晶であるこ
とが判明した。しかし、光学顕微鏡による観察の結果、
多結晶であるにもかかわらず薄膜６は唐草模様状及びバ
ブル状の磁区構造を有し、また次のような優れた特性を
有する極めて良好な垂直磁化膜であることが測定によっ
て明らかにされた。When the crystallinity of the thin film 6 manufactured according to the above embodiment was examined by X-ray diffraction, it was found that it was a polycrystal without a dominant orientation. However, as a result of observation using an optical microscope,
Although thin film 6 is polycrystalline, it has an arabesque-like and bubble-like magnetic domain structure, and measurements have revealed that it is an extremely good perpendicularly magnetized film with the following excellent properties. .
即ち、第２図に示すように、膜面に垂直な方向の磁界１
１に対する薄膜６のファラデー回転角θ「のヒステリシ
ス特性を測定したところ、角形性が良好なループが得ら
れ、磁気トルク測定から垂直磁化膜であることが判明し
た。またファラデー回転角θ、は約１．５°と極めて大
きく、また保磁力Ｈ６も約２０００ｅと十分に大きい。That is, as shown in FIG. 2, the magnetic field 1 in the direction perpendicular to the film surface
When we measured the hysteresis characteristics of the Faraday rotation angle θ of the thin film 6 with respect to It is extremely large at 1.5°, and the coercive force H6 is also sufficiently large at about 2000e.
このように１薄膜６は磁気記録材料として極めて好まし
い性質を有していることがわかる。なお第２図に示すよ
うな優れた特性を存する垂直磁化膜が得られることから
、薄膜６中にはより大きな垂直磁気異方性を賦与するＢ
ｉが固溶限界程度まで固溶していることが推定される。It can thus be seen that the 1 thin film 6 has extremely desirable properties as a magnetic recording material. Note that since a perpendicularly magnetized film with excellent properties as shown in FIG.
It is estimated that i is dissolved in solid solution up to the solid solution limit.
なお第２図において、ファラデー回転角θ、測定用の光
源としては、Ｈｅ −Ｎｅレーザー（波長６３２８人）
を用いた。また測定は、上記薄膜６に光を透過させて行
った。In Fig. 2, the Faraday rotation angle θ is measured using a He-Ne laser (wavelength 6328).
was used. Further, the measurement was performed by transmitting light through the thin film 6.
上述の実施例においては、薄膜６を形成ずべき基板とし
て石英ガラス基板２を用いたが他の種類のガラス基板等
の非晶質基板を用いてもよいことは勿論、例えば金属、
半導体、絶縁体等の結晶性基板を用いてもよい。また保
護膜としては、例えば７００℃程度の高温で薄膜６と反
応しなければＳｉ Ｏ□膜膜板以外膜でもよく、例えば
ＺｎＯ，Ｔｉ Ｏ□、 Ｃｅ Ｏ，等の酸化物、 Ｓｉ
３ Ｎ４等の窒化物、 Ｂａ Ｆｖ。In the above-mentioned embodiment, the quartz glass substrate 2 was used as the substrate on which the thin film 6 was to be formed, but it goes without saying that other types of amorphous substrates such as glass substrates may also be used.
A crystalline substrate such as a semiconductor or an insulator may also be used. Further, the protective film may be a film other than the SiO□ film plate as long as it does not react with the thin film 6 at a high temperature of about 700°C, for example, an oxide such as ZnO, TiO□, CeO, etc.
3 Nitride such as N4, Ba Fv.
Ｃａ Ｉ’２ 等のフッ化物等の膜を用いてよい。なお
保護膜の１１りｊＶは５００人以コニであるのが好まし
い。A film of fluoride such as Ca I'2 may be used. Incidentally, it is preferable that the protective film has a value of 500 or more.
また上述の実施例においては５磁性薄膜及び保護膜を形
成するのにスパッタ法を用いたが、例えば蒸着法、ＣＶ
Ｄ法、イオンブレーティング法等の他の気相成長法を用
いてもよい。なお保護膜（Ｓｉ Ｏ□膜、Ｔｉ Ｏ□膜
等）はいわゆる熱分解焼付法によって形成することも’
ｊＩ ｉｆｌ：である。ここで非晶質磁性薄１漠のｎり
ｊＶば５μＩ１１以下であるのが好ましい。Furthermore, in the above embodiments, the sputtering method was used to form the magnetic thin film and the protective film.
Other vapor phase growth methods such as the D method and the ion blating method may also be used. Note that the protective film (SiO□ film, TiO□ film, etc.) can also be formed by the so-called pyrolysis baking method.
jI ifl:. Here, it is preferable that the amorphous magnetic thin film has a n/V value of 5 μI11 or less.
また非晶質磁性薄膜は希十灯（鉄ガーネットであれば磁
性薄１１りとなるが、十二面体位置の２０％以、］二が
旧に置換されたＢｉ置ｆＡＥ土頬鉄ガーネ・ノドであれ
ば磁気異方性が増し好ましい。In addition, the amorphous magnetic thin film is a rare magnetic thin film (if it is iron garnet, it will be magnetic thin 11, but at least 20% of the dodecahedral position). If so, the magnetic anisotropy will increase, which is preferable.
さらに上述の実施例におい−とは、熱処理条件を７００
°Ｃ，３時間としたが、これに限定されるものでは勿論
なく必要に応して変更することができる。しかし、熱処
理温度が低ずぎると結晶化の程度が小さいので、５００
℃以上の温度で熱処理するのが好ましい。また薄膜６を
形成するときの基板温度も実施例の温度に限定されるも
のではなく形成される薄膜６が非晶質であれば他の温度
でもよいが、５００℃以下であるのが好まＬ７い。Furthermore, in the above-mentioned examples, the heat treatment conditions were set to 700
°C for 3 hours, but it is of course not limited to this and can be changed as necessary. However, if the heat treatment temperature is too low, the degree of crystallization will be small;
Preferably, the heat treatment is carried out at a temperature of 0.degree. C. or higher. Further, the substrate temperature when forming the thin film 6 is not limited to the temperature in the embodiment, and may be any other temperature as long as the thin film 6 to be formed is amorphous, but it is preferably 500°C or less. stomach.
なお上述の実施例においては、Ｊｌ晶質の希土類鉄ガー
ネッＨ３ｉｔ膜の形成にスパッタ法を用い、その第１の
ターゲットの材料として組成弐旧２．。In the above embodiment, the sputtering method was used to form the Jl crystalline rare earth iron garnet H3it film, and the first target material had a composition of 2. .
ｖｌ、。Ｆｅ ３．１＋ ＡＩ ＋、ｚ Ｏ＋ｚ で表
される多結晶状の鉄ガーネットを用いたが、ターゲット
組成はこれに限定されるものではなく、例えば上述の組
成式に含まれる元素をそれぞれ含む混合物であってもよ
い。より一般的には、（旧２０３）、（ＲｚＯ’５）ｙ
（Ｆｅ ｚ Ｏｘ ） ｚ （？ｈ ０３） ｕで表さ
れるような少なくともＢｉ原子、Ｆｅ原子及び希土類原
子を含む酸化物から成る材料を用いることができる。こ
こで、０＜Ｘ≦３／２、Ｑ＜ｙ≦３／２．０〈ｚ〈５／
２．０≦Ｕ≦５／２である。また１ンはＹ、Ｓｍ等の希
土類元素であり、Ｍは＾１３゛、Ｇａ”、Ｓｃ”、Ｔ１
３＊、（Ｃｏ２＋ ＋Ｔｉ”）等である。vl,. Although polycrystalline iron garnet represented by Fe 3.1+ AI +, z O+z was used, the target composition is not limited to this. For example, a mixture containing each of the elements included in the above composition formula may be used. There may be. More generally, (old 203), (RzO'5)y
A material consisting of an oxide represented by (Fez Ox) z (?h 03) u and containing at least Bi atoms, Fe atoms, and rare earth atoms can be used. Here, 0<X≦3/2, Q<y≦3/2.0〈z〈5/
2.0≦U≦5/2. In addition, 1 is a rare earth element such as Y or Sm, and M is ^13゛, Ga'', Sc'', T1
3*, (Co2+ +Ti”), etc.
以上述べたように、本発明に係る磁性薄膜の製造方法に
よれば、得られる希土類鉄ガーネット薄膜は所定の基板
上に形成された非晶質の希土類鉄ガーネット薄膜を熱処
理により結晶化したものであり、またこの際この結晶化
のための熱処理による悪影響を上記希土類鉄ガー不ノｌ
−薄膜上に形成した保護膜により防止することができる
ので、極めて良好な垂直磁化特性を有する磁性薄膜を製
造することができる。また磁性薄膜を形成すべき基板の
材質を種々に選ぶことができるので、製造上極めて好都
合である。As described above, according to the method for manufacturing a magnetic thin film according to the present invention, the obtained rare earth iron garnet thin film is obtained by crystallizing an amorphous rare earth iron garnet thin film formed on a predetermined substrate by heat treatment. Also, at this time, the above rare earth iron oxide may have an adverse effect due to the heat treatment for crystallization.
- Since this can be prevented by a protective film formed on the thin film, a magnetic thin film having extremely good perpendicular magnetization characteristics can be manufactured. Furthermore, since the material of the substrate on which the magnetic thin film is to be formed can be selected from various materials, it is extremely convenient in terms of manufacturing.
第１Ａ図及び第１Ｂ図は本発明に係る磁性薄膜の製造方
法の一実施例をその実施に用いた高周波スパッタリング
装置と共に工程順に示す断面図、第２図は本発明に係る
磁性薄膜の製造方法の一実施例により製造された （Ｙ
、Ｂｉ）＋ （Ｆｅ、ＡＩ） ｓ ０ ＋２薄膜のヒス
テリシス特性を示すグラフである。
なお図面に用いた符号において、
ｉ −−−−一 電極板（試料台）
２ −−−−−−−−一 石英ガラス基板３ −一一−
−−− 電極板
４ −−−−−−− 第１のターゲット５ −−−−−
−−− ヒータ
６−−−−−−−−−−−（Ｙ、旧）３ （Ｆｅ、ＡＩ
） ｓ ０ ＋２薄膜７ −−−−−−一 第２のター
ゲット８−−−−−−−− Ｓｉ Ｏ□膜
である。
代理人 上屋 勝
常包芳男FIGS. 1A and 1B are cross-sectional views showing an embodiment of the method for producing a magnetic thin film according to the present invention in the order of steps together with a high-frequency sputtering apparatus used for carrying out the method, and FIG. 2 is a method for producing a magnetic thin film according to the present invention. (Y
, Bi)+ (Fe, AI) s 0 +2 is a graph showing the hysteresis characteristics of the thin film. In addition, in the symbols used in the drawings, i -----1 electrode plate (sample stand) 2 --------1 quartz glass substrate 3 -11-
--- Electrode plate 4 ------ First target 5 ---
--- Heater 6 ----------- (Y, old) 3 (Fe, AI
) s 0 +2 thin film 7 --------1 Second target 8 ------- SiO□ film. Agent Yoshio Katsutsunekane Ueya
Claims (1)
成長法により形成し、上記非晶質の希土類鉄ガーネット
薄膜上に保護膜を形成し、次いで熱処理を行うことによ
り上記非晶質の希土類鉄ガーネット薄膜を結晶化させる
ことを特徴とする磁性薄膜の製造方法。An amorphous rare earth iron garnet thin film is formed on a predetermined substrate by a vapor phase growth method, a protective film is formed on the amorphous rare earth iron garnet thin film, and then heat treatment is performed to form the amorphous thin film. A method for producing a magnetic thin film characterized by crystallizing a rare earth iron garnet thin film.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP613484A JPS60150614A (en) | 1984-01-17 | 1984-01-17 | Manufacture of magnetic thin film |
| PCT/JP1984/000547 WO1985002292A1 (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing photothermomagnetic recording film |
| EP19840904169 EP0196332B1 (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing photothermomagnetic recording film |
| US06/763,789 US4608142A (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing magneto-optic recording film |
| DE8484904169T DE3482886D1 (en) | 1983-11-17 | 1984-11-15 | METHOD FOR PRODUCING PHOTOTHERMOMAGNETIC RECORDING FILMS. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP613484A JPS60150614A (en) | 1984-01-17 | 1984-01-17 | Manufacture of magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60150614A true JPS60150614A (en) | 1985-08-08 |
| JPH0354454B2 JPH0354454B2 (en) | 1991-08-20 |
Family
ID=11630028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP613484A Granted JPS60150614A (en) | 1983-11-17 | 1984-01-17 | Manufacture of magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60150614A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124213A (en) * | 1984-07-03 | 1986-02-01 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Method of forming bismuth substituted ferry magnetic garnet film |
| JPH01125654A (en) * | 1987-11-11 | 1989-05-18 | Canon Inc | Information processor |
| US6759137B1 (en) | 1998-08-28 | 2004-07-06 | Centre National De La Recherche Scientifique, Inc. | Opto-magnetic recording medium with a garnet ferrite recording layer, and opto-magnetic information recording/reproducing device |
| JP2019192750A (en) * | 2018-04-24 | 2019-10-31 | 株式会社アルバック | Formation method of magnetic film and thermoelectric element |
-
1984
- 1984-01-17 JP JP613484A patent/JPS60150614A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124213A (en) * | 1984-07-03 | 1986-02-01 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Method of forming bismuth substituted ferry magnetic garnet film |
| JPH01125654A (en) * | 1987-11-11 | 1989-05-18 | Canon Inc | Information processor |
| US6759137B1 (en) | 1998-08-28 | 2004-07-06 | Centre National De La Recherche Scientifique, Inc. | Opto-magnetic recording medium with a garnet ferrite recording layer, and opto-magnetic information recording/reproducing device |
| JP2019192750A (en) * | 2018-04-24 | 2019-10-31 | 株式会社アルバック | Formation method of magnetic film and thermoelectric element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354454B2 (en) | 1991-08-20 |
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