JPS60150318A - Electronic switch - Google Patents

Electronic switch

Info

Publication number
JPS60150318A
JPS60150318A JP59006438A JP643884A JPS60150318A JP S60150318 A JPS60150318 A JP S60150318A JP 59006438 A JP59006438 A JP 59006438A JP 643884 A JP643884 A JP 643884A JP S60150318 A JPS60150318 A JP S60150318A
Authority
JP
Japan
Prior art keywords
circuit
short
current
fet6
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59006438A
Other languages
Japanese (ja)
Inventor
Kiyoshi Miyamoto
宮本 潔
Kenji Ueda
建治 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP59006438A priority Critical patent/JPS60150318A/en
Publication of JPS60150318A publication Critical patent/JPS60150318A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/945Proximity switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To attain short-circuit protection with simple circuit constitution by using an FET for a constant voltage circuit given to a detection circuit and an output switch circuit at short circuit. CONSTITUTION:When an object approaches a proximity switch at the short-circuit state of a load L, an output of a sensor circuit 12 triggers a thyristor 8 via a transistor (TR) 14 and a large current flows to an FET6 and a thyristor 8 functioning as a switching element. Since a gate voltage of the FET6, however, is kept to a prescribed value by a Zener diode 5, the current flowing to the FET6 is suppressed to a value below a prescribed value with the constant current characteristic of the FET. A voltage across a resistor R9 for overcurrent detection is increased just after and a thyristor 7 is triggered and turned off. Then the gate potential of the FET6 is decreased to near zero voltage, the FET6 is turned off and the short-circuit current is applied with current limit and cut off momentarily.

Description

【発明の詳細な説明】 発明の分野 本発明は負荷と電源間に直列に接続され検知出力に基づ
いて直接負荷を制御するように構成されている二線式の
光電スイッチや近接スイッチ等の電子スイッチに関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to electronic devices such as two-wire photoelectric switches and proximity switches that are connected in series between a load and a power source and are configured to directly control the load based on a sensed output. It is related to switches.

従来技術とその問題点 負荷を直接制御するように構成されている光電スイッチ
や近接スイッチ等の二線式電子スイッチは、検知部とサ
イリスタ等のスイッチング素子とを有し、検知出力に基
づいてスイッチング素子が駆動され負荷への電力の供給
が制御されるよう構成されている。ところで事故によっ
て負荷が内部短絡状態となった場合や誤って負荷を接続
することなく電源を直接電子スイッチに接続することが
ある。このような短絡状態から内部回路を保護するため
に電子スイッチ内部に短絡保護のための保護回路が設け
られる。しかしながら短絡保護回路の動作が遅ければ、
短絡保護が働くまでの間は短絡大電流がスイッチング素
子等にそのまま流れてしまうという問題点があった。こ
のような大電流が流れるのを防止するためにスイッチン
グ素子に直列に電流制限用の抵抗を接続した電子スイッ
チがあるが、電流制限用抵抗の電力容量は大きなものと
しなければならず、その形状も大きくなり電子スイッチ
全体を小型化することが困難になるという問題点があっ
た。
Conventional technology and its problems Two-wire electronic switches such as photoelectric switches and proximity switches that are configured to directly control loads have a detection section and a switching element such as a thyristor, and switch based on the detection output. The device is configured to drive and control the supply of power to the load. By the way, if a load becomes internally short-circuited due to an accident, or by mistake, the power source may be connected directly to the electronic switch without connecting the load. In order to protect the internal circuit from such a short-circuit condition, a protection circuit for short-circuit protection is provided inside the electronic switch. However, if the short circuit protection circuit operates slowly,
There is a problem in that a large short-circuit current continues to flow through the switching elements and the like until the short-circuit protection is activated. In order to prevent such large currents from flowing, there are electronic switches that have a current-limiting resistor connected in series with the switching element, but the current-limiting resistor must have a large power capacity and its shape There was a problem in that the size of the electronic switch also increased, making it difficult to miniaturize the entire electronic switch.

又短絡保護回路が設けられた従来の電子スイッチは回路
構成が複雑となるため価格が上昇するという問題点もあ
った。
Furthermore, conventional electronic switches equipped with short-circuit protection circuits have a complicated circuit configuration, resulting in an increase in price.

発明の目的 本発明はこのような従来の電子スイッチの問題点を解消
するものであって、簡単な回路構成によって短絡時にも
大電流をスイッチング素子に流すことなく短絡電流を遮
断することができ、内部回路を保護することができる電
子スイッチを提供するものである。
OBJECTS OF THE INVENTION The present invention solves the problems of conventional electronic switches, and is capable of interrupting short-circuit current without flowing a large current to the switching element even in the event of a short-circuit with a simple circuit configuration. The present invention provides an electronic switch that can protect internal circuits.

発明の構成と効果 本発明はセンサ回路と、負荷及び電源に直列に接続され
、該センサ回路の出力に基づいて負荷への電力供給を制
御する出力開閉用スイッチング素子と、を有する電子ス
イッチであって、出力開閉用スイッチング素子に直列に
接続されると共に、その一端が前記センサ回路の電源入
力端に接続された電力用電界効果型トランジスタと、出
力開閉用スイッチング素子に直列に接続された過電流検
出用抵抗と、電界効果型トランジスタのゲート端子を定
電圧に保つ定電圧回路と、電界効果型トランジスタのゲ
ート端子と電源端間に接続されそのゲー1−が過電流検
知用抵抗に接続されて短絡時の電圧上昇によって1−リ
ガされると共に、センサ回路の電源によって保持される
短絡保護用のサイリスクと、を具備することを特徴とす
るものである。
Structure and Effects of the Invention The present invention is an electronic switch that has a sensor circuit and an output switching element that is connected in series to a load and a power source and controls power supply to the load based on the output of the sensor circuit. a power field effect transistor connected in series to the output switching element and one end of which is connected to the power input terminal of the sensor circuit; and an overcurrent transistor connected in series to the output switching element. A detection resistor, a constant voltage circuit that keeps the gate terminal of the field effect transistor at a constant voltage, and a gate terminal connected between the gate terminal of the field effect transistor and the power supply terminal, and its gate 1- connected to the overcurrent detection resistor. The sensor is characterized by having a short-circuit protection risk that is triggered by a voltage rise during a short circuit and is maintained by the power source of the sensor circuit.

このような特徴を有する本発明によれば、ゲート電位が
一定に保たれた電界効果型l・ランリスクを介してセン
サ回路に電源が供給されるので、センサ回路に与える電
源電圧を一定に保つことが可能となる。又短絡が起こっ
ても電界効果型トランジスタの定電流特性によりそのと
きにスイッチング素子を流れる電流は一定値に制限され
、直ちに短絡保護用のサイリスクが導通して電界効果型
トランジスタをカットオフする。従って以後短絡電流を
遮断し内部回路を保護することが可能となる。
According to the present invention having such characteristics, power is supplied to the sensor circuit through the field effect type l-run risk whose gate potential is kept constant, so that the power supply voltage applied to the sensor circuit can be kept constant. becomes possible. Furthermore, even if a short circuit occurs, the current flowing through the switching element is limited to a constant value due to the constant current characteristics of the field effect transistor, and the short circuit protection circuit immediately conducts to cut off the field effect transistor. Therefore, it becomes possible to block the short circuit current and protect the internal circuit from now on.

このように本発明では電界効果型1−ランリスクを検出
回路に与える定電圧回路と短絡時の出力開閉回路の双方
に用いており、極めて簡単な回路構成で短絡保護を行う
ことが可能となる。そして−[短絡保護が行わればセン
サ回路から供給される保持電流によりサイリスクはオン
状態に保たれるので、保護動作がそのまま継続され、確
実な保護を行うことができる。
In this way, the present invention uses field-effect type 1-run risk in both the constant voltage circuit that provides the detection circuit and the output switching circuit in the event of a short circuit, making it possible to provide short circuit protection with an extremely simple circuit configuration. . And - [If short-circuit protection is performed, the Cyrisk is kept in the on state by the holding current supplied from the sensor circuit, so the protective operation continues as it is, and reliable protection can be performed.

実施例の説明 第1図は本発明による交流二線式の近接スイッチの一実
施例を示す回路図である。本図におい゛ζ端子1,2間
にダイオードブリッジ3が接続され、ダイオードブリッ
ジ3の正負端間に抵抗R4とツェナダイオード5からな
る定電圧回路が設けられる。抵抗R4は回路状態の如何
にかかわらず電源より電流が流れるため高抵抗とし消費
電流を少なくすることが好ましい。そして抵抗R4の両
端に電力用の電界効果型トランジスタ(MOSFET)
6のドレイン、ゲー1−を並列に接続し、ツェナダイオ
ード5に短絡保護用の号イリスタフを並列に接続する。
DESCRIPTION OF EMBODIMENTS FIG. 1 is a circuit diagram showing an embodiment of an AC two-wire proximity switch according to the present invention. In this figure, a diode bridge 3 is connected between the ζ terminals 1 and 2, and a constant voltage circuit consisting of a resistor R4 and a Zener diode 5 is provided between the positive and negative terminals of the diode bridge 3. Since current flows through the resistor R4 from the power supply regardless of the circuit state, it is preferable to have a high resistance to reduce current consumption. And a power field effect transistor (MOSFET) is connected to both ends of the resistor R4.
The drain of No. 6 and the gate No. 1- are connected in parallel, and the Zener diode 5 is connected with No. Iristaf for short circuit protection in parallel.

ツェナダイオード5による定電圧はこの電子スイッチの
定格電流がFET6の定電流特性に等しくなる値のゲー
ト電圧を選択するものとする。FIET6のソースとダ
イオードブリッジ3の負端子間には出力開閉用のスイッ
チング素子であるサイリスク8と過電流検出用抵抗R9
が接続される。サイリスク8と抵抗R9の共通接続端は
サイリスク7のゲート端子に接続される。更にFET6
のソースは急速充電用トランジスタ10のエミッタに接
続され、そのコレクタはダイオード11を介してセンサ
回1?&12の電源人力631 V ccに接続される
。センサ回路12ばT 、Cとして形成され発振回路を
有し物体の近接を検知するものであって、その電源端子
間には平滑用及び電力供給用のコンデンサCI3が設け
られる。そしてセンサ回路12の出力端子にはその出力
を電流増幅してサイリスタ8にトリガ信号を与える1〜
ランジスタ140ベースが接続され、そのエミッタは抵
抗R15を介してダイオードブリッジ3の負端子に接続
されると共に、抵抗R15と1−ランリスタ14のエミ
ッタとの共通接続端がサイリスタ8のゲート端に接続さ
れている。更にトランジスタ14のコレクタはツェナダ
イオード16を介してトランジスタ10のヘースに接続
される。トランジスタ10のコレクタ、エミノク間は電
源を投入したときに突入電流を制限する抵抗R17によ
ってバイパスされており、電源コンデンサC13の正端
子は短絡保護動作時にサイリスタ7に保持電流を与える
抵抗R18とダイオード19を介してサイリスタ7のア
ノードに接続されている。更にセンサ回路12には検知
用コイル20とコンデンサc21との共振回路が接続さ
れている。
For the constant voltage provided by the Zener diode 5, a gate voltage having a value such that the rated current of this electronic switch is equal to the constant current characteristic of the FET 6 shall be selected. Between the source of FIET 6 and the negative terminal of diode bridge 3, there is Sirisk 8, which is a switching element for output switching, and resistor R9 for overcurrent detection.
is connected. A common connection end of the thyrisk 8 and the resistor R9 is connected to the gate terminal of the thyrisk 7. Furthermore, FET6
The source of is connected to the emitter of the quick charging transistor 10, and its collector is connected to the sensor circuit 1 through a diode 11. &12 power supply human power 631 V cc. The sensor circuit 12 is formed as T and C and has an oscillation circuit to detect the proximity of an object, and a smoothing and power supply capacitor CI3 is provided between its power terminals. The output terminal of the sensor circuit 12 is then amplified with current and a trigger signal is provided to the thyristor 8.
The base of transistor 140 is connected, its emitter is connected to the negative terminal of diode bridge 3 via resistor R15, and the common connection end of resistor R15 and the emitter of 1-run resistor 14 is connected to the gate end of thyristor 8. ing. Further, the collector of transistor 14 is connected to the heath of transistor 10 via Zener diode 16. The connection between the collector of the transistor 10 and the eminook is bypassed by a resistor R17 that limits the rush current when the power is turned on, and the positive terminal of the power supply capacitor C13 is connected to a resistor R18 and a diode 19 that provide a holding current to the thyristor 7 during short-circuit protection operation. The anode of the thyristor 7 is connected to the anode of the thyristor 7 via. Furthermore, a resonance circuit including a detection coil 20 and a capacitor c21 is connected to the sensor circuit 12.

ざて端子1,2間に図示のように交流電源3゜と負荷り
とを直列に接続する。そうすれば負荷I4に微少電流が
流れ交流電源3oの交流電圧はダイオードブリッジ3に
よって整流され、抵抗R4゜ツェナダイオード5による
定電圧回路によってFET6のゲートが一定電圧に保た
れ、FET6がオンとなる。そしてそのソース電圧も一
定となってFET6.抵抗R17,ダイオード11を介
してセンサ回路12に電源が供給されると共に、コンデ
ンサC13が充電される。このときセンサ回路12に接
続されている検知コイル2oとコンデンサC21による
共振回路によりセンサ回路12の発振器が発振し、物体
の近接を待受ける待機状態となっている。待機状態では
サイリスタ7及び8はオフであり、FET6のみがオン
状態である。
An AC power supply 3° and a load are connected in series between terminals 1 and 2 as shown in the figure. Then, a small current flows through the load I4, and the AC voltage of the AC power supply 3o is rectified by the diode bridge 3, and the gate of FET6 is kept at a constant voltage by the constant voltage circuit made of resistor R4゜zener diode 5, turning on FET6. . Then, its source voltage also becomes constant, and FET6. Power is supplied to the sensor circuit 12 via the resistor R17 and the diode 11, and the capacitor C13 is charged. At this time, the oscillator of the sensor circuit 12 oscillates due to the resonance circuit formed by the detection coil 2o and the capacitor C21 connected to the sensor circuit 12, and the sensor circuit 12 is in a standby state waiting for an object to approach. In the standby state, thyristors 7 and 8 are off, and only FET 6 is on.

そして物体が近接してセンサ回路12の発振状態が変化
したとすると、センサ回路12は出力端子より“H”レ
ベルの出力を出しトランジスタ14を導通させる。そう
すれば抵抗R15に電流が流れてトランジスタ14のエ
ミッタ電圧が上昇しサイリスク8力月・リガされる。従
ってサイリスタ8がターンオンし、ダイオードブリッジ
3とFET6とを介して負荷りに電流が供給され負荷り
が駆動される。以後の各サイクルにおいてはゼロクロス
点を通過するとサイリスタ8は一旦ターンオフするが、
トランジスタ10及び14はすぐにオン状態となりコン
デンサC13が急速充電され、ツェナダイオード16の
ツェナ電圧に達すればトランジスタ10がオフとなりサ
イリスタ8がターンオンする。そして負荷りを流れる電
流が定格電流内であれば、過電流検出用抵抗R9の両端
には充分な電圧が発生しないのでサイリスタ7がトリガ
されることばない。このようにしてセン9・回路12に
電源を供給すると共にサイリスタ8を位相制御している
If an object approaches and the oscillation state of the sensor circuit 12 changes, the sensor circuit 12 outputs an "H" level output from its output terminal, making the transistor 14 conductive. Then, a current flows through the resistor R15, and the emitter voltage of the transistor 14 rises, causing the risk to rise. Therefore, the thyristor 8 is turned on, current is supplied to the load via the diode bridge 3 and the FET 6, and the load is driven. In each subsequent cycle, the thyristor 8 is temporarily turned off after passing the zero cross point.
Transistors 10 and 14 are immediately turned on and capacitor C13 is rapidly charged, and when the Zener voltage of Zener diode 16 is reached, transistor 10 is turned off and thyristor 8 is turned on. If the current flowing through the load is within the rated current, the thyristor 7 will not be triggered because a sufficient voltage will not be generated across the overcurrent detection resistor R9. In this way, power is supplied to the sensor 9 and circuit 12, and the phase of the thyristor 8 is controlled.

さて負荷りに過電流が流れたり、又は負荷りを短絡した
場合の動作について説明する。今負荷りが短絡状態とな
っている状態で物体が近接スイッチに接近したとする。
Now, the operation when an overcurrent flows through the load or when the load is short-circuited will be explained. Suppose that an object approaches the proximity switch while the load is short-circuited.

そうずればセンサ回路12は出力を出しトランジスタ1
4を介してサイリスタ8がトリガされるため、FET6
と・す′イリスタ8に大電流が流れる。しかしFET6
のゲート電圧はツェナダイオード5によって一定値に保
たれているので、FET6を流れる電流もFETの定電
流特性によって一定値以下に押ざえられる。その直後に
過電流検出用の抵抗R9の両端の電圧が」二昇し、サイ
リスタ7がトリガされてターンオンする。従ってFET
6のゲート電位がゼロボルト付近に下がりFET6をオ
フとする。そのため短絡電流は電流制限がかかると共に
瞬時にして遮断されることとなる。以後サイリスタ7に
はコンデンサC13から抵抗R18,ダイオード19を
介して保持電流が供給されるため、交流のゼロクロス点
でも復帰せずオン状態を続け、FET6は短絡電流を遮
断し続ける。そのため負荷りの短絡状態を除いて電源を
再投入するまで保護回路が動作し続けることとなり、保
護を確実にすることができる。
Then the sensor circuit 12 outputs an output and the transistor 1
Since thyristor 8 is triggered via FET 6
A large current flows through the iris register 8. However, FET6
Since the gate voltage of is kept at a constant value by the Zener diode 5, the current flowing through the FET 6 is also held below a constant value by the constant current characteristic of the FET. Immediately after that, the voltage across the overcurrent detection resistor R9 rises by 2', and the thyristor 7 is triggered and turned on. Therefore FET
The gate potential of FET 6 drops to around zero volts, turning off FET 6. Therefore, the short circuit current is limited and instantaneously cut off. Since the holding current is thereafter supplied to the thyristor 7 from the capacitor C13 via the resistor R18 and the diode 19, the thyristor 7 does not return even at the AC zero cross point and continues to be in the on state, and the FET 6 continues to cut off the short-circuit current. Therefore, the protection circuit continues to operate until the power is turned on again, except when the load is short-circuited, and protection can be ensured.

本実施例は交流二線式近接スイッチについて説明したが
、光電スイッチ等、他の二線式電子スイッチに応用する
ことが可能であることはいうまでもない。又本実施例は
電源として交流電源を用いているが、直流電源を用いた
電子スイッチにも適用することが可能であり、その場合
にはザイリスク7に対する保持回路を除くことができる
Although the present embodiment has been described with reference to an AC two-wire proximity switch, it goes without saying that the present invention can be applied to other two-wire electronic switches such as photoelectric switches. Further, although this embodiment uses an AC power source as a power source, it is also possible to apply the present invention to an electronic switch using a DC power source, and in that case, the holding circuit for the XIRISK 7 can be omitted.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による交流二線式近接スイッチの一実施
例を示す回路図である。 1、 2−−−一端子 4− ダ・イオードブリノジ6
−−FET 7,8−−−−−ザイリスタ 10゜14
−−−−1−ランジスク l 2−−−−センサ回路C
13、C21−−−−コンデンサ R9−−−一過電流
検出用抵抗 R4,R15,R17,RlB−−一抵抗 特許出願人 立石電槻株式会社 代理人 弁理士 岡本宜宮(他1名)
FIG. 1 is a circuit diagram showing an embodiment of an AC two-wire proximity switch according to the present invention. 1, 2---one terminal 4- da iode brine 6
--FET 7,8---Zyristor 10°14
-----1-Landisk l 2----Sensor circuit C
13, C21 --- Capacitor R9 --- Resistor for transient current detection R4, R15, R17, RlB --- Resistor Patent applicant Tateishi Dentsuki Co., Ltd. agent Patent attorney Okamoto Ginomiya (1 other person)

Claims (2)

【特許請求の範囲】[Claims] (1)センサ回路と、負荷及び電源に直列に接続され、
該センサ回路の出力に基づいて負荷への電力供給を制御
する出力開閉用スイッチング素子と、を有する電子スイ
ッチにおいて、 前記出力開閉用スイッチング素子に直列に接続されると
共に、その一端が前記センサ回路の電源入力端に接続さ
れた電力用電界効果型l・ランリスクと、 前記出力開閉用スイッチング素子に直列に接続された過
電流検出用抵抗と、 前記電界効果型トランジスタのゲート端子を定電圧に保
つ定電圧回路と、 前記電界効果型トランジスタのゲート端子と電源端間に
接続されそのゲー1−が前記過電流検知用抵抗に接続さ
れて短絡時の電圧上昇によってトリガされると共に、前
記センサ回路の電源によって保持される短絡保護用のサ
イリスクと、を具備することを特徴とする電子スイッチ
(1) Connected in series to the sensor circuit, load and power supply,
An electronic switch having an output switching element that controls power supply to a load based on the output of the sensor circuit, the electronic switch being connected in series to the output switching element and having one end connected to the output switching element of the sensor circuit. A power field effect type l-run risk connected to the power supply input terminal, an overcurrent detection resistor connected in series to the output switching element, and a gate terminal of the field effect transistor maintained at a constant voltage. a constant voltage circuit, which is connected between the gate terminal of the field effect transistor and the power supply terminal, the gate 1- of which is connected to the overcurrent detection resistor, and is triggered by a voltage increase at the time of a short circuit; An electronic switch comprising: a short-circuit protection cyrisk held by a power source;
(2)前記定電圧回路は前記サイリスクに並列に接続さ
れたツェナダイオードと該サイリスクと電源の他端間に
接続された抵抗とを有することを特徴とする特許請求の
範囲第1項記載の電子スイッチ。
(2) The electronic device according to claim 1, wherein the constant voltage circuit includes a Zener diode connected in parallel to the sirisk, and a resistor connected between the sirisk and the other end of the power supply. switch.
JP59006438A 1984-01-18 1984-01-18 Electronic switch Pending JPS60150318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59006438A JPS60150318A (en) 1984-01-18 1984-01-18 Electronic switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59006438A JPS60150318A (en) 1984-01-18 1984-01-18 Electronic switch

Publications (1)

Publication Number Publication Date
JPS60150318A true JPS60150318A (en) 1985-08-08

Family

ID=11638400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59006438A Pending JPS60150318A (en) 1984-01-18 1984-01-18 Electronic switch

Country Status (1)

Country Link
JP (1) JPS60150318A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160412A (en) * 1986-12-23 1988-07-04 Keyence Corp Contactless two-wire ac switch
JPS63160413A (en) * 1986-12-23 1988-07-04 Keyence Corp Contactless two-wire ac switch
JPH01159431U (en) * 1988-04-25 1989-11-06

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057226B2 (en) * 1981-03-31 1985-12-13 富士通株式会社 How to align semiconductor elements

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057226B2 (en) * 1981-03-31 1985-12-13 富士通株式会社 How to align semiconductor elements

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160412A (en) * 1986-12-23 1988-07-04 Keyence Corp Contactless two-wire ac switch
JPS63160413A (en) * 1986-12-23 1988-07-04 Keyence Corp Contactless two-wire ac switch
JPH01159431U (en) * 1988-04-25 1989-11-06

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