JPS60145650A - Manufacture of thin film semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the scatter of resistance values of a semiconductor resistance element in the case of formation as a semiconductor resistance thin film by a method wherein a contamination-preventing insulation film is formed on a semiconductor thin film, and the thin film is patterned without being exposed to the air. CONSTITUTION:The semiconductor thin film 2 mainly made of silicon is formed on a substrate 1 by the sputtering method, and the contamination-preventing insulation film 11 made of SiO2 or Si3N4 is formed by the sputtering method without exposing the thin film 2 to the outer air. The semiconductor thin film 4 and the contamination-preventing insulation film 14 resulting from patterning are formed by etching by the use of a mask layer 3. An insulation film 5 is formed, and windows 6 are opened; then, conductive films 7 are formed. Even when the thin film 2 has been formed by containing relatively larger amounts of defects or vacant holes, the patterned thin film 4 substantially containing no oxygen can be formed. In the case of its formation as a semiconductor resistance thin film, the scatter of resistance values of a semiconductor resistance element can be much reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a substrate having an insulating surface on which a patterned semiconductor 3G film mainly composed of silicon is formed. An insulating film is formed on the top of each insulating film through a window extending to the outside of the semiconductor film and extending to the outside, and connected to the patterned semiconductor film through the window on the insulating film. The present invention relates to a method for manufacturing a thin film semiconductor device in which a conductive film is formed and a structure is formed.

The beginning of the present invention is a method for manufacturing a thin IIQ semiconductor device having the above-mentioned configuration,
Conventionally, the following method has been proposed, as shown in FIG.

First, a substrate 1 covering the insulating surface is prepared in advance (FIG. 1A).

A semiconducting thin film 2 containing silicon as a main component is formed on the L, C1 and J46 plates by sputtering (FIG. 1, 113).

Next, a mask layer 3 is formed on the semiconductor thin film 2 with a desired pattern n1, for example, 7711 to 4T with resist.
Then, by etching the semiconductor thin film 2 by covering the three mask layers as a mask, a patterned semiconductor film 4 is formed on the semiconductor thin film 2 (Fig. 1D).
).

Next, the mask layer 3 is removed from the patterned semiconductor film 4 (FIG. 1).

Next, an insulating film 5 is formed on the substrate 1 and extends over the patterned semiconductor thin film 4 (FIG. 1F).

Next, the patterned semiconductor device I+! is applied to the insulating film 5.
A window 6 that exposes 4 to the outside is formed by A lithography (FIG. 1G).

Next, a conductive IIT) 7 is formed on the insulating film 5, which is connected to the patterned semiconductor thin film 4 through the window 6 (FIG. 1()).

The above is conventional 1! This is a manufacturing method of a thin film semiconductor device proposed by ffl.

If this J, Eel manufacturing method is used, the two windows 6 of the insulating film 5]
Both ends of the semiconductor thin film /1 patterned by -C are exposed to the outside, and -C two conductive films 1'! By connecting a single film 7 to both ends of a patterned semiconductor film 4, a thin film 21' conductor device can be fabricated using a semiconductor film 7.

By the way, in the case of manufacturing the conventional thin film semiconductor device shown in FIG. 1, the semiconductor thin film 2 is formed by the sputtering method.
Compared to the case of forming by CVD method or vacuum evaporation method, it can be formed easily at low temperature and with good controllability. Therefore, it is possible to easily manufacture a thin film device.

However, in the case of the conventional thin film semiconductor device manufacturing method shown in FIG. The semiconductor thin film 2 is exposed to the atmosphere between the two sides, and then the substrate 1 is exposed.
An insulating film 5 is formed on the insulating film 5, a window 6 is formed in the insulating film 5, and a conductive film 5 is formed on the insulating film 5. ,! In the process of forming 7, the patterned 1. : Semiconductor film 4 becomes popular. On the other hand, 5? F > 9 f book “a” j II! When J 2 is formed in 1L by sputtering method, the semiconductor thin film 2 contains a relatively large amount of defects and vacancies.
Assume that -C is formed.

(, L), the patterned semiconductor thin film 5 is J clearly shown in FIG.
: Sea urchin is formed by containing a relatively large amount of oxygen in addition to silicon.

For this reason, for example, if the patterned semiconductor device 11Q4 is doped with phosphorus impurity and the thin film semiconductor device is manufactured as a semiconductor resistance element, the resistance value of the semiconductor resistance element will vary depending on the phosphorus impurity concentration. On the other hand, as shown in FIG.

Therefore, if the conventional technology is not shown in FIG. It had the disadvantage that it did not work properly.

According to the disclosure of the present invention, the present invention 131 has the above-mentioned /J drawback /7, υ1)
This paper proposes a method for manufacturing various thin film conductor devices.

According to the method for manufacturing a thin film semiconductor device according to the first invention of the present application, similarly to the method for manufacturing the conventional thin film 1' conductor device described above in FIG. Is silicon the main component?
Take the steps to form a small membrane.

However, after the next step, the ′-1′ conductor thin film [to
(without exposing it to the outside air) Go back to the process of forming the RJ Kyo-dye prevention insulating film.

After that process, with the contamination prevention insulating film left on the semi-solid thin film, a patterned phosphor thin film is formed from the V conductive thin Itφ, and then a patterned phosphor thin film is formed on the substrate. Forming an extending insulating film on the patterned semiconductor film, then forming a window in the insulating film, and then connecting to the patterned semiconductor A9 film through the window of the insulating film on the insulating film. A sequential process of forming a conductive film is performed.

For this reason, as shown in Figure 1? i Although it has the characteristics of the conventional thin film semiconductor device manufacturing method, it does not have any drawbacks.

Furthermore, according to the method for manufacturing a thin film semiconductor device according to the invention of "Kigan No. 2 No. 1", the thin ++p semiconductor device (
/11 As in the manufacturing method of the device, a semiconductor thin film is formed on a substrate, and then a contamination prevention II-use die pattern is formed on the semiconductor film without exposing it to the public. After sequentially removing the two culms, with the 1F insulating film remaining on the semiconductor thin film before contamination, the process of ``heat-treating 15 conductor layers'' is carried out, and then the semiconductor thin film is heated. Form a patterned semiconductor thin film on the substrate, form an insulating film extending to the patterned semiconductor thin film-1 on the substrate, form a window in the insulating film, and add an insulating layer to the insulating layer. Sequential steps are taken to form a conductive film that connects to the patterned N6 conductor film through the film's windows. .

Therefore, the same features as in the method for manufacturing a thin film semiconductor device according to the first invention of the present application are obtained.
According to the method for manufacturing a thin film semiconductor device according to the invention, a semiconductor thin film is formed on the substrate "d", and then a semiconductor thin film is formed on the substrate "d", and then a semiconductor thin film is formed on the substrate "d". 9 on the film, without exposing it to popularity? ri
Forming an insulating film for preventing contamination η Taking the sequential steps of 1, leaving an insulating film for preventing contamination on the semiconductor thin film, forming a patterned semiconductor 9.9119 from the semiconductor thin film, and then forming a patterned semiconductor 9.9119 from the semiconductor thin film. The patterned semiconductor thin film is then subjected to a heat treatment process, and then the insulation Its! is formed, a window is formed in the insulating film, and the insulation II', ! Sequential steps are then taken to form a conductive film connected to the patterned composite film through the windows of the insulating film.

Therefore, the same characteristics as in the case of the manufacturing method of the thin film semiconductor device (2) according to the first invention of the present application are obtained.

As shown in FIG. 4, on a substrate 1 having an insulating surface,
Depositing silicon as the main component using sputtering method 1
(In the process of forming the conductor thin film 2, the semiconductor thin film 2-[,
A step of forming the contamination prevention insulating film 11 is performed without exposing it to the outside air (step 4N and B).

Next, the semiconductor thin film 2 and the pollution prevention insulating film! l! 11
By patterning process using Anti-Zansuk 3,
A patterned semi-contamination film 4 and a patterned contamination prevention insulation film 14 are formed from the semiconductor thin film 2 and the pollution prevention insulation film 11, respectively (FIGS. 4C and D). ).

Next, on the substrate 1, after removing the mask 3, an insulating film 5 extending to the patterned contamination prevention insulating film 1/l-1- is formed (FIGS. 4E and F). ).

Next, a window 6 is formed in the insulating film 5 and the patterned contamination prevention insulating film 14 through which the patterned half-body thin film 4 is exposed to the outside (FIG. 4G). .

Next, on the insulating film 5, a conductive ↑1 film 7 is formed which is connected to the -C patterned semiconductor thin film 4 through the window 6 (
Figure 4 1-1).

As shown in FIG. 5 of the second invention of the present application, on a substrate 1 having an insulating surface,
A semiconductor thin film 2 containing silicon as a main component is formed by a sputtering method. Then, a contamination prevention insulating film 11 is formed on the semiconductor thin film 2 without exposing it to the outside air. Return to the forming process (Fig. 5, 8 and [3).

Next, with the contamination prevention insulating film 11 left on the semiconductor thin film 2, the semiconductor thin film 2 is subjected to heat treatment.
Semiconductor thin film 2/) 11 and the like are formed into a heat-treated semiconductor film 2' (FIG. 5C).

Next, the contamination prevention insulating film 11 is removed from the heat-treated semiconductor thin film 2', and then the heat-treated semiconductor thin film 2' is patterned using the mask 3. A patterned semiconductor 7tg film 4' is completely formed from the semiconductor thin film 2' (FIG. 5C-F).
).

Next, place 1 on M board 1. After removing the strip 3, an insulating layer 5 extending over the patterned semiconductor thin film 4' is formed (FIGS. 5G and 1).

Next, insulation 11S! A window 6 is formed in b to expose the patterned semiconductor thin film 4' to the outside (FIG. 5, 1).

Next, a conductive film 7 is formed on the insulating film 5, which is connected to the patterned semiconductor thin film 4' through the window 6 (FIG. 5J).

Taking the same steps as in the case of the third invention of the present application, Figures 4 A to E (Figure 6, 8)
Thereafter, the semiconductor layer I1 4 is subjected to heat treatment to obtain a heat treated Iζζ semiconductor film 4' (FIG. 6B). Next, after removing the contamination prevention insulating film 11 (FIG. 6C), as shown in FIG.
~ Follow the 11th culm of J.

The above is the manufacturing method of the thin film semiconductor device according to the present invention. 7th corresponding to figure 3
It is clear that the 'Mr l'l/J mouth'+b in Figures and Figure 8 does not overcome the drawbacks of the conventional method shown in Figure 1.

[Brief explanation of the drawing]

FIG. 1 is a diagram illustrating a conventional method for manufacturing a thin film semiconductor device. FIGS. 2 and 3 are 1h diagrams for explaining this. FIGS. 4 to 6 are diagrams showing embodiments of the 5H'l, second and third inventions, respectively. FIGS. 7 and 8 are characteristic diagrams similar to those in FIGS. 2 and 3, respectively. Figure 1 Figure 1 1+ 0 20 40 (a) Construction ゛79%, hCke) Figure 3 ¥) +-Ko! (Yu? (, oI-ri Figure 4 Figure 5 Figure 5 Figure 5 Figure G Relationship with Patent Applicant Address 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo Name
(422) Nippon Telegraph and Telephone Public Corporation Representative Tsune Shinfuji 4, Agent address 5-7 Kojimachi, Chiyo 11-ku, Tokyo 102 Hidekazu Kiotsuki-cho TBR No. 820 No. 5, Date of amendment order Voluntary amendment 6, Increase due to amendment Number of inventions to be made: None 7, Subject of amendment: Full text of the specification and drawings 8, Contents of amendment: As shown in the attached sheet 1, Title of invention: Method for manufacturing a thin film semiconductor device 2, Claims 1: Substrate having an insulating surface a step of forming a semiconductor thin film containing silicon as a main component by a sputtering method; a step of forming an insulating film for preventing contamination on the semiconductor thin film without exposing it to the outside air; forming a patterned semiconductor thin film and a patterned pollution prevention insulating film from the semiconductor thin film and the pollution prevention insulating film, respectively, by patterning the film and the pollution prevention insulating film; forming an insulating film extending on the patterned contamination prevention insulating film on the substrate; forming a window that exposes the patterned semiconductor thin film to the outside; and forming a conductive film on the insulating crotch, the conductive film being connected to the patterned semiconductor thin film through the window. A method for manufacturing a thin film semiconductor device characterized by: 2. Forming a semiconductor thin film mainly composed of silicon by sputtering on a substrate having an insulating surface;
forming an insulating film for preventing contamination; After removing the contamination prevention insulating film from the heat-treated semiconductor thin film, a patterning process is performed on the heat-treated semiconductor thin film. forming a patterned semiconductor thin film from the applied semiconductor thin film; forming, on the substrate, the patterned insulating film extending from i=semi-semiconductor film height; The steps include forming a window that allows the patterned semiconductor thin film to be exposed to the outside, and forming a conductive film connected to the patterned semiconductor thin film through the window on the insulating crotch. A manufacturing method for thin film semiconductor devices characterized by: 3. Forming a semiconductor thin film containing silicon as a main component by sputtering on a substrate having an insulating surface, and forming a semiconductor thin film on the semiconductor thin film without exposing it to outside air.
A semiconductor 'A9 that is patterned from the semiconductor thin film and the contamination prevention insulating film, respectively, by a step of forming a contamination prevention insulating film, and a patterning process for the late conductor thin film and the contamination prevention insulating film.
11'A and a step of forming a patterned contamination prevention insulating film, and leaving the patterned contamination prevention insulating film on the patterned semiconductor thin film in an IC state; forming a patterned and heat-treated semiconductor thin film by subjecting the semiconductor film to heat treatment; and forming the patterned contamination prevention insulating film into the patterned and heat-treated forming an insulating film extending over the patterned and heat-treated semiconductor thin film on the two plates; In the step of forming a window that exposes the patterned and heat-treated semiconductor thin film to the outside, a conductive film is formed on the insulating layer and connected to the patterned and heat-treated semiconductor thin film through the window. 1. A method for manufacturing a thin film semiconductor device, characterized in that the device includes a T-shaped culm. 3. Detailed Description of the Invention 11 The present invention is characterized in that a patterned semiconductor film mainly composed of silicon is formed on a substrate having an insulating surface, and a semiconductor thin film is formed on the semiconductor thin film. An insulating film is formed that has an extended window that exposes the semiconductor film to the outside;
The present invention relates to a method for manufacturing a thin film semiconductor device in which a conductive film is formed on the insulating ridge and is connected to a patterned semiconductor thin film through the window. As a method for manufacturing a thin film semiconductor device having the above-described structure, the method described below with reference to FIG. 1 has been proposed. However, the substrate 1 having an insulating surface was neglected in advance (FIG. 1 Δ). Then, a semiconductor thin film 2 mainly composed of silicon is formed on the substrate 1 by sputtering method (
Figure 1 B). Next, a mask layer 3 made of photoresist, for example, having a desired pattern is formed on the semiconductor film 2 (FIG. 1C). Next, a patterned semiconductor thin film 4 is formed from the C1 semiconductor film 2 by etching the semiconductor film 2 using the mask layer 3 as a mask (FIG. 1D). Next, a mask layer 3 is formed on the patterned semiconductor thin film 4.
(Fig. 1E). Next, an insulating film 5 extending over the patterned semiconductor thin film 4 is formed on the substrate 1 (FIG. 1F). Next, a window 6 through which the patterned semiconductor thin film 4 is exposed to the outside is formed in the insulating film 5 by photolithography (FIG. 1G). Next, a C-patterned semiconductor device j! is formed on the insulating film 5 through the window 6. 4 is formed (FIG. 1H). The above are the conventionally proposed methods for manufacturing thin film semiconductor devices. If such a manufacturing method is used, the window 6 of the insulating film 5 is formed so that both ends of the patterned semiconductor R film 4 are exposed to the outside, as shown in FIG. 1G. Also,
As shown in FIG. 1F, the conductive film 7 is formed into a window 6 that allows both ends of the patterned semiconductor thin film 4 to be exposed to the outside.
A thin film semiconductor device can be manufactured as a semiconductor resistor element by forming the semiconductor resistive element as being separately connected to both ends of the patterned semiconductor thin film 4 through the respective conductors. By the way, in the case of the conventional manufacturing method of the thin film semiconductor device shown in FIG. 1, the semiconductor thin film 2 is formed by sputtering method, so compared to the case where the semiconductor thin film 2 is formed by CVD method or vacuum evaporation method, the semiconductor thin film 2 is formed at low humidity. In: Good controllability, can be easily formed. Therefore, it has the characteristic that a thin film semiconductor device can be easily manufactured. However, in the case of the conventional thin film semiconductor manufacturing method shown in FIG. After forming A2 by sputtering method, the semiconductor A9 film 2 is
In the darkness until the patterned semiconductor thin film 4 is formed, the semiconductor film 2 is forced to become popular. Further, after forming the patterned semiconductor film 4 from the semiconductor film 2 and before forming the insulating film 5 on the substrate 1, the patterned semiconductor film 4
is forced to be exposed to popularity. On the other hand, when the semiconductor thin film 2 is formed at a low temperature by sputtering, the V film 2 is generally formed to contain a relatively large amount of defects and pores. Therefore, in the case of the conventional method for manufacturing a thin film semiconductor device shown in FIG. 1, when the patterned semiconductor film 4 is made of silicon, the patterned semiconductor film 4 is As is clear from FIG. 2, which shows the results of compositional analysis of The results show the composition analysis results in the thickness direction of the patterned semiconductor film 4 based on the results of measuring the strong J-peak polishing of the semiconductor thin film 4 each time etching was performed. The cumulative value of the etching time sequentially performed on the coating 4 is calculated in units of one etching interval (minutes), and the vertical axis shows the Augerbeak strong polishing arbitrary scale for the etching time (minutes). . In this way, in the case of the conventional thin film semiconductor device manufacturing method shown in FIG. 1, the patterned semiconductor device 11! Since a 4 is formed by doping a large amount of oxygen, the patterned semiconductor thin film 4 is formed as a semiconductor resistive thin film doped with impurities such as phosphorus to control the specific resistance,
Therefore, when a thin film semiconductor device is manufactured as a semiconductor resistance element with a controlled resistance value, the resistance value (Ω) of the semiconductor resistance element is determined by the impurity concentration of phosphorus doped in the semiconductor film 4 (atom/ Gm') as shown in Figure 3.
J-J, Uni, was scored 11 times with wide variation. Therefore, in the case of the manufacturing method of the oil film semiconductor device shown in FIG. It was right. Therefore, the present invention provides a novel rfj without the above-mentioned drawbacks.
There is a paper C that proposes a method for manufacturing H'A semiconductor devices. According to the manufacturing method of the thin film semiconductor device according to the first invention of the present application, as in the case of the manufacturing method of the conventional thin film semiconductor device described above in FIG. However, after this step, a step is taken to form an insulating layer for preventing contamination on the semiconductor thin film without exposing it to the outside air. After that process, a patterned semiconductor thin film is formed from the semiconductor layer with the contamination prevention insulating film left on the semiconductor film, and then a patterned semiconductor thin film is formed on the substrate. forming an insulating film extending over the thin film, then forming a window in the insulating film, and then forming a conductive layer on the insulating film that connects to the patterned semiconductor thin film through the window in the insulating film. Therefore, according to the method for manufacturing a thin film semiconductor device according to the first invention of the present application, while having the characteristics of the conventional method for manufacturing a thin film semiconductor device shown in FIG. In addition, according to the method for manufacturing a thin film semiconductor device according to the second invention of the present application, the same method as the method for manufacturing a thin film semiconductor device according to the first invention of the present application can be achieved. After forming a semiconductor thin film on a substrate, and then forming a contamination prevention insulating film on the semiconductor thin film without exposing it to the atmosphere, the contamination prevention film is formed on the semiconductor thin film. With the insulating film remaining, the semiconductor thin film is subjected to heat treatment, and then
A patterned semiconductor thin film is formed on the heat-treated semiconductor thin film 2, an insulating film extending over the patterned semiconductor thin film is formed on the substrate, and then the insulating film is formed on the substrate. A window is formed in the film and then the semiconductor a9 K! is patterned onto the insulating film through the window in the insulating film. The sequential steps of forming a conductive film connected to the wafer are performed. Therefore, the method for manufacturing a base film semiconductor device according to the first aspect of the present invention has the same characteristics as the method for manufacturing a thin film semiconductor device according to the first aspect of the present invention. Furthermore, according to the method for manufacturing a conductor device with 21 ipI films according to the third invention of the present application, similarly to the method of manufacturing a thin film semiconductor device according to the first invention of the present application, a semiconductor thin film is formed on the curtain plate, and then After a sequential process of forming a contamination prevention insulating film on the semiconductor thin film without exposing it to the atmosphere, the semiconductor is A patterned semiconductor thin film is formed from a thin film, and then a heat treatment is performed on the patterned semiconductor thin film to form a patterned and heat-treated semiconductor N film from the patterned semiconductor thin film. Next, an insulating film extending over the patterned and heat-treated semiconductor A9 is formed on the substrate, a window is formed in the insulating film, and then, The sequential steps of forming a conductive film on the insulating crotch which connects to the patterned semiconductor thin film through the windows of the insulating IlQ are performed. Therefore, the manufacturing method of the thin film semiconductor device according to the third invention of the present application also has the same characteristics as the method of manufacturing the thin film semiconductor device according to the first invention of the present application. First, an embodiment of a method for manufacturing a thin film semiconductor device according to the first invention of the present application will be described with reference to FIG. In FIG. 4, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted. An embodiment of the method for manufacturing a thin film semiconductor device according to the first invention of the present application shown in FIG. 4 is as follows. Using the TJ rope t5, prepare and cover the 1J board 11 that goes right over the surface of the insulation 1 (Fig. 4 Δ). Then, on the substrate 1, a thin film 2 (a semiconductor mainly composed of silicon) is formed by a sputtering method known per se using a sputtering apparatus having a known chamber. , then the semiconductor thin film 2
on top, without exposing it to the outside air, e.g. SiO,
,3i! A contamination prevention insulating film 11 made of Ni or the like is formed to a thickness of, for example, 10 nm to 11000 nm (4th I).
',! 113). In this case, the contamination prevention insulating film 11 is formed by a vacuum evaporation method or a plasma vapor deposition method (plasma CVD method) which is known per se, but it has better controllability than those methods. ) X et al., it is preferable to form by sputtering method. One method for forming the contamination prevention insulating film 11 by sputtering is to form the semiconductor thin film 2 by sputtering, contact it, and then form and cover the c, (half) 9-body thin film 2. A target made of a material having the same composition as the contamination prevention insulating film 11 placed in advance in the chamber before forming the semiconductor thin film 2 in the chamber is placed inside the chamber without touching the chamber. According to such a method, the contamination prevention insulating film 11 is sputtered from
The semiconductor thin film 2 can be easily formed without exposing it to the atmosphere. Another method for forming the contamination prevention insulating film 11 by sputtering is to form the semiconductor thin film 2 by sputtering and then use a chiton bar to form the semiconductor thin film 2. Sputtering is performed in the chamber without opening the chamber, from the silicon substrate 1 placed in advance before forming the semiconductor film 2 in the chamber, and the contamination prevention insulating film 11 is placed in the chamber. 1q is assumed to be made of 3i0+, and oxygen gas is introduced from Tergutsu 1 to 1q as a reactive gas that reacts with sputtered silicon. By using this method, the insulating film 11 for preventing contamination can be formed using a semiconductor material. The 7I film 2 can be easily formed without exposing it to popularity. Next, a desired pattern is formed on the contamination prevention insulating film 11 in the same manner as described above with reference to FIG. 1C. A mask layer 3 made of a photoresist is formed as shown in FIG.
A patterned semiconductor thin film 4 and a patterned contamination prevention insulating film 14 are formed from the semiconductor packaging film 2 and the contamination prevention insulating film 11, respectively, by egg processing using the patterned I as a mask. 4 Figure 1)). Next, the mask layer 3 is removed from the patterned contamination prevention insulating film 14 (Fig. 4E), and then the patterned An extending insulating film 5 is formed on the contamination prevention insulating film 14 (
Figure 4F). Next, a window 6 is formed through the insulating film 5 and the patterned contamination-prevention insulating film 14 to expose the patterned semiconductor thin film 4 to the outside, as in the case of FIG. 1G. To,
It is formed by photolithography (Fig. 4G). Next, a conductive film 7 connected to the patterned semiconductor thin film 4 through the window 6 is placed on the insulating film 5 as shown in FIG.
1 (Fig. 4, 1-()). The above is an embodiment of the method for manufacturing a λ99 film semiconductor device according to the first invention of the present application. 5 and the window 6 of the patterned anti-contamination insulating film 4, as shown in FIG. 4G and in the same manner as described above in FIG.
Both sides 92 of the C semiconductor film 4 are formed separately facing the outside, and a conductive layer 1197 is formed as shown in FIG.
As shown in J and as described above with reference to FIG. By forming them as connected separately, the thin film semiconductor device can be manufactured as a semiconductor resistive element, as in the case of the conventional n9 film semiconductor device described above in FIG. There is. In addition, the i99 according to the invention of No. 1 [1] of the present application shown in FIG.
In the case of the method for manufacturing a film semiconductor device, the semiconductor 1A thin film 2 is formed by the sputtering method as in the case of the conventional thin film semiconductor device described above in FIG. As with the thin film semiconductor device of
Ru. However, in the case of the manufacturing method of the thin film semiconductor device according to the first invention shown in FIG. 4, after the semiconductor thin film 2 is formed by the sputtering method, on the semi-η-body auxiliary film 2,
A contamination prevention insulating film 11 is formed without exposing it to the atmosphere, and the semiconductor device is patterned from the semiconductor thin film 2 with the contamination prevention insulating film 11 remaining! Since the semiconductor film 2 is formed before the semiconductor film 2 is formed, the semiconductor film 2 is not likely to be exposed to popularity after the semiconductor film 2 is formed until the patterned semiconductor thin film 4 is formed from the semiconductor thin film 2. do not have. Next, the semiconductor thin film 4 patterned from the semiconductor film 2
After forming and before forming the insulating film 5,
Even if the side surface of the patterned semiconductor thin film 4 is exposed to popularity, the surface of the semiconductor a9 film 4 is not exposed to the atmosphere. Therefore, in the method of manufacturing a thin film semiconductor device according to the first invention of the present application shown in FIG. 4, by forming the semiconductor thin film 2 at a low temperature by sputtering, the semiconductor film 2 is relatively free from defects and holes. If the patterned semiconductor thin film 4 is made of silicon even if it is formed with a large amount of silicon, the patterned semiconductor thin film 4 can be subjected to two-electron spectroscopy similar to that shown in FIG. J.
Figure 7 shows the results of compositional analysis in the thickness direction.
As shown in the figure, it is formed with substantially no oxygen. Therefore, in the case of the manufacturing method of the thin film semiconductor device according to the first invention of the present application as shown in FIG. , for example, is formed as a semiconductor resistor thin film doped with phosphorus impurities to control the specific resistance. Therefore, when manufacturing a thin film semiconductor device as a semiconductor resistor element with controlled resistance, the resistance value of the semiconductor resistor element ( Ω)
is the impurity concentration of phosphorus doped in the semiconductor thin film 4 (
atom/am'), as shown in FIG. This is much smaller than the similar variation in the resistance value (Ω) of the semiconductor resistance element in the case of the semiconductor resistance element. Therefore, in the case of the manufacturing method of the thin film semiconductor device according to the first invention of the present application shown in FIG. It is characterized by good properties and can be easily manufactured. ',-'! -' -Mouth-Blood J [Next, an embodiment of the method for manufacturing a thin film semiconductor device according to the second invention of the present application will be described with reference to FIG. At d3 in FIG. 5, parts corresponding to those in FIG. 4 are designated by the same reference numerals, and detailed description thereof will be omitted. The method for manufacturing a thin film semiconductor device according to the second invention of the present application as shown in FIG. 5 is as follows. That is, as in the case of the first invention of the present application described above with reference to FIG. A semiconductor thin film 2 as a component is formed, and then a contamination prevention insulating film 11 is formed on the semiconductor thin film 2 without exposing it to the outside air (FIG. 5B).
Next, contamination prevention insulation is applied on the semiconductor thin film 2! l! ! With 11 remaining, the semiconductor thin film 2 is subjected to heat treatment at a temperature of about 1000°C, and a heat-treated semiconductor thin film 2' is formed from the semiconductor thin film 2. 5th
Figure C). Next, after removing the contamination prevention insulating film 11 from the heat-treated semiconductor thin film 2', a mask layer is placed on the heat-treated semiconductor thin film 2' in the same manner as described above with reference to FIG. 4C. 5 (work), the heat-treated semiconductor thin film 2' is patterned by etching using the mask layer 3 as a mask for the heat-treated semiconductor thin film 2'. forming a semiconductor thin film 4' (fifth
Figure F). Next, a mask 3 is placed over the patterned semiconductor thin film 4'.
5G), and then an insulating film 5 is formed on the substrate 1, extending over the patterned semiconductor thin film 4' (FIG. 5H). Next, a window 6 is formed in the insulating film 5 to expose the patterned semiconductor thin film 4' to the outside (FIG. 5I). Next, a conductive film 7 is formed on the insulating BTA 5, which is connected to the patterned semiconductor thin film 4' through the window 6.
(Figure 5 J). The above is an embodiment of the method for manufacturing a thin film semiconductor device according to the second invention of the present application. According to such a manufacturing method, the window 6 of the insulating film 5 can be formed as shown in FIG.
Both ends of the patterned semiconductor thin film 4' are formed to be exposed to the outside separately, and the conductive film 7 is formed at the fifth end.
As shown in FIG. J and in the same manner as described above with reference to FIG. By forming the thin film semiconductor device to be separately connected to both ends of , the thin film semiconductor device can be manufactured as a semiconductor resistance element, as in the case of the first light of the present application described above in FIG. 4. . Also, in the case of the manufacturing method of the thin film semiconductor device according to the invention of No. 2 L1 of the present application shown in FIG. 5, the semiconductor pair IP+! 2 is formed using the sputtering method as in the case of the first invention of the present application described above with reference to FIG. It has the characteristic that a thin film semiconductor device can be easily manufactured. Furthermore, in the case of the manufacturing method of the thin film semiconductor device according to the invention of No. 2M of the present application as shown in FIG. Since the contamination prevention insulating film 11 is formed without incident, the semiconductor thin film 2 is not exposed to the atmosphere after the semiconductor thin film 2 is formed and before the heat-treated semiconductor pair 11TA2' is formed from the semiconductor thin film 2. not be exposed to. In addition, the semiconductor thin film 2' formed from the semiconductor thin film 2 by heat treatment does not have much semiconductor, or even if it does have it, it has much less semiconductor than a semiconductor thin film that has not been heat treated. . Therefore, the semiconductor thin film 2
After forming a heat-treated semiconductor film 2', a patterned semiconductor thin film 4' is formed from the semiconductor thin film 2'.
Even if the semiconductor thin film 2' becomes popular before the semiconductor thin film 4' is formed, or even if the semiconductor thin film 4' becomes popular after the semiconductor thin film 4' is formed, , after obtaining the thin film semiconductor device, the semiconductor thin film 4
', as in the case of the manufacturing method of the thin film semiconductor device according to the first invention of the present application shown in FIG. It is formed as something that is not. For this reason, also in the case of the manufacturing method of the thin film semiconductor device according to the second invention of the present application shown in FIG. The resistance of the device is controlled /j
When manufacturing semiconductors with low resistance, the variation in resistance values is much smaller. Accordingly, in the case of the manufacturing method of the thin film semiconductor device according to the second invention of the present application based on FIG.
It has the characteristic that a thin film semiconductor device with good characteristics can be easily manufactured. W of ILI-Next, an embodiment of the method for manufacturing a thin film semiconductor device according to the 33rd invention of the present application will be described with reference to FIG. Corresponding parts of J3 in FIG. 6 and FIGS. 4 and 5 are designated by the same reference numerals, and detailed explanations thereof will be omitted. An embodiment of the method for manufacturing a thin film semiconductor device according to the 33rd invention of the present application shown in FIG. 6 is as follows. That is, by taking steps similar to those described above with reference to FIGS. 4A to 4E, a patterned semiconductor thin film 4 and a patterned semiconductor thin film 4 are formed on a substrate 1, as shown in FIG. A trench structure is obtained in which a patterned contamination prevention insulating film 14 is laminated. Next, i ooo to the patterned semiconductor thin film 4
After performing heat treatment at a temperature of about °C, the semiconductor thin film 4 is
A heat-treated semiconductor thin film 4' is formed (FIG. 6B).
). Next, from above the heat-treated semiconductor thin film 4', contamination prevention insulation 1]! Remove J14 (Figure 6G). Next, go through the same steps as described above in FIGS. 11 to 11J. The above is an embodiment of the method for manufacturing a thin film semiconductor device according to the third invention of the present application. According to such a manufacturing method, the patterned semiconductor thin film 4 is formed using the same steps as those described above in FIGS. Until the patterned semiconductor thin film 4 is formed, the semiconductor thin film 2 is not exposed to popularity, and after forming the patterned semiconductor film 4, the patterning is performed by heat treatment. After the heat-treated semiconductor thin film 4' is formed from the semiconductor device 11 that has been processed, it is exposed to popularity (also, the semiconductor device 194' is substantially exposed to oxygen, nitrogen, etc.). Therefore, even in the case of directly manufacturing the i9 film semiconductor device d1 according to the third invention of the present application described above with reference to FIG. 6, the thin film semiconductor device according to the first invention of the present application shown in FIG. As in the case of the manufacturing method, the thin film semiconductor device has good characteristics and can be easily manufactured. 4. Brief description of the drawings FIG. There is a cross-sectional view C showing a conventional method for manufacturing a thin film semiconductor device in a poly-sequential process. The horizontal axis shows the etching time when etching the patterned semiconductor thin film from its surface, and the vertical axis shows the composition analysis results in the thickness direction of the patterned semiconductor thin film. [The peak intensity is shown in the J-diagram. Figure 3 shows a patterned semiconductor thin film formed as a semiconductor resistive thin film doped with phosphorous impurities, and a 'C,R9 film semiconductor device used as a semiconductor resistive element. When formed, the impurity moisture content (atom
/cm') of the resistance value (Ω) of the semiconductor resistance element
Fig. 4 shows the variation in . FIGS. 4, 5, and 6 are shown in Section 1 of the present application, respectively. Second
and FIG. 7 is a line sectional view showing sequential steps of an embodiment of a method for manufacturing a thin film semiconductor device according to the third invention. 7 and 8 are views similar to those shown in FIGS. 2 and 3, respectively, in the case of the manufacturing method of the thin film semiconductor device according to the present invention shown in FIG. 4. １・・・・・・・・・・・・・・・Substrate 2・・・・・・
......Semiconductor packaging film 2'...
...Heat-treated semiconductor thin film 3...Mask layer 4...
...... Patterned semiconductor thin film 4' ...... Patterned and heat-treated semiconductor thin film 5 ...... ......Insulating film 6...
...... Window 7 ...... Conductive film 11 ...
......Insulating film 14 for preventing contamination...
・・・・・・・・・・・・Patent attorney Masaharu Tanaka Patent attorney Patterned insulating film for contamination prevention Figure 7 Etching i darkness (minutes)

Claims (1)

[Claims] 1. Forming a semiconductor thin film containing silicon-1 as a main component by sputtering on a substrate having an insulating surface; The above semiconductor thin film and the above pollution prevention insulating film are patterned to form a contamination prevention insulating film without exposing it to the outside air. Insulation 1' 7! h' 1 culm for forming a patterned semiconductor ii', I IFJ and a patterned contamination prevention insulating film on each of the substrates; forming an insulating IJ extending on the patterned contamination prevention insulating film, and passing the patterned semiconductor through the insulating film and the patterned stain prevention insulating film. forming a window that exposes the thin film to the outside; and forming a conductive film on the insulating film that is patterned and connected to the semiconductor thin film through the window.
A method for manufacturing a thin film semiconductor device characterized by comprising a step. 2. A step of forming and covering a semiconductor thin film mainly composed of °C1 silicon by sputtering method on a substrate with an insulating surface; A step of forming an insulating film for preventing contamination, and performing heat treatment on the semiconductor film with the insulating film for preventing contamination remaining on the semiconductor thin film (41). After removing the contamination prevention insulating film from the heat-treated semiconductor film, forming the heat-treated semiconductor film a9;
By patterning the film, a patterned semiconductor thin film is formed from the semiconductor thin film that has been subjected to the 1-2 heat treatment.
forming an insulating film extending on the patterned conductor thin film 21′ on the substrate; and forming a pattern 1 on the insulating film; Forming a window for exposing the conductor film to the outside; and forming a conductive film on the insulating FA, which is connected to the patterned semiconductor thin film through the window. 3. A method for manufacturing a thin film semiconductor device in which an insulating surface is formed on a substrate (by a sputtering method). A step of forming and covering a conductive thin film with the components, and exposing it to the outside air on the semiconductor thin film,
21-culm etc. to form the contamination prevention insulation 11), from the semiconductor thin film and the stain prevention insulation film, respectively, by a patterning process that overlaps the late conductor a9 film and the contamination prevention insulation film. patterned semiconductor 2
In the process of forming a 1g film and a patterned insulating film for preventing contamination, the patterned insulating film 4 for preventing staining is formed on the patterned semiconductor thin film with the patterned insulating film 4 for preventing staining left on the patterned semiconductor thin film. The patterned semiconductor thin film is subjected to heat treatment to form a patterned semiconductor film. After removing the semiconductor thin film subjected to the thermal ffi period, forming an insulating film extending over the patterned semiconductor film subjected to the heat treatment on the substrate; A window is formed in the insulation layer 1 to allow the patterned and processed IC semiconductor thin film to be exposed to the outside. [
a culm, and an L culm forming a conductive film connected to the conductive thin film, which is patterned and heat-treated through the window on the insulating crotch; Manufacturing method for thin film semiconductor devices.