JPS60140716A - Silicon wafer - Google Patents
Silicon waferInfo
- Publication number
- JPS60140716A JPS60140716A JP25013383A JP25013383A JPS60140716A JP S60140716 A JPS60140716 A JP S60140716A JP 25013383 A JP25013383 A JP 25013383A JP 25013383 A JP25013383 A JP 25013383A JP S60140716 A JPS60140716 A JP S60140716A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- magnetic field
- wafer
- solid solution
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体集積回路基板として用いられるシリコン
ウェーハに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a silicon wafer used as a semiconductor integrated circuit board.
従来、このためのウェーッ１としては、いわゆるチョク
ラルスキ法（以後Ｃ２法と略称する。）によるシリコン
単結晶から切シ出され、使用されているが、固溶酸素濃
度は一般的にかなシ高く、石英ルツボを使用する限りは
、これを抑制する事はできず、溶液の対流によるドーパ
ントのムラも存在した。酸素濃度がかなり高い点は、製
造プロセス中での欠陥が発生し易く、またサーマルドナ
による抵抗率変動といり問題点も存在した。典型的な酸
素線度は赤外吸収法により係数４．８１に用いた場合に
１３〜２０ Ｘ １０”ｔｗｒ−”であシ、製造プロセ
スでの酸素固溶限に比べ著るしく高く、これが欠陥発生
の原因である。従って欠陥抑制のためには酸素濃度全像
くする対策が有効であろうと考えられるが、極端な場合
としてフローティング・シー法によるシリコン結晶の場
合には、酸素濃度は１０６ｎ 以下と考えられているが
、この場合には逆に熱によるソリの発生１歩留り低下現
象が発生する。従って最適の酸素濃度が存在する事にな
るが、この値は必ずしも明確では無かった。一方、ドー
パントむらの抑制は対流を押さえる事によって著るしく
減少する点が、磁場中でのＣ２法による結晶成長で確認
されている。本発明者は対流抑制を特徴とする磁場中で
のＣＺ法シリコン結晶の内部欠陥の発生、及びそれを利
用したイントリンシックゲッタリング効果（以下ＩＧ効
果と略称する）について調べた結果、最適のウェーハ仕
様をめるに到ったものである。Conventionally, the wafer 1 for this purpose has been cut from a silicon single crystal by the so-called Czochralski method (hereinafter abbreviated as the C2 method) and used, but the solid solution oxygen concentration is generally quite high. As long as a quartz crucible was used, this could not be suppressed, and there was also unevenness in the dopant due to convection of the solution. The relatively high oxygen concentration tends to cause defects during the manufacturing process, and there are also problems with resistivity fluctuations due to the thermal donor. Typical oxygen linearity is 13-20 x 10"twr-" when using infrared absorption method with a coefficient of 4.81, which is significantly higher than the oxygen solid solubility limit in the manufacturing process. This is the cause of defects. Therefore, in order to suppress defects, it may be effective to take measures to improve the overall oxygen concentration, but in the extreme case of silicon crystal produced by the floating sea method, the oxygen concentration is thought to be less than 106n. In this case, conversely, warpage due to heat occurs, resulting in a decrease in yield. Therefore, an optimal oxygen concentration exists, but this value has not always been clear. On the other hand, it has been confirmed in crystal growth using the C2 method in a magnetic field that dopant unevenness can be significantly reduced by suppressing convection. The present inventor investigated the occurrence of internal defects in CZ silicon crystals in a magnetic field characterized by convection suppression, and the intrinsic gettering effect (hereinafter abbreviated as the IG effect) utilizing it, and found that the optimum wafer We have now finalized the specifications.
本発明は、磁場中でのＣＺ法によるシリコン単結晶にお
いて、充分にかつ容易にＩＧ効果を発生させ、一方サー
マルドナの抑制、ドーパントむらの減少、ソリ抑制をな
す事を目的とする。本発明は磁場中におかれたルツボか
ら結晶引上げを行なったチョクラルスキ法シリコン単結
晶において格子間酸素濃産金６〜ｌｌＸｌ０ ｃｍ 、
固溶炭素濃度を２〜８ Ｘ １０”ｍ−３とし、これか
ら作成された事を特徴とするシリコンウェーハを与える
。磁場中ＣＺ法は酸素濃度を抑制する事が可能であるが
、この場合にはＩＧ効果の発生には極めて長時間の熱処
理を要する事が明らかになシ、この時間短縮のため、炭
素の添加が必要となった。固溶炭素濃度は２〜８Ｘ１０
ｃｍ が適しており、これ以上の場合には表面無欠陥
層が形成しにくく、これ以下の場合には効果が無い事が
明らかになった。磁場は引上方向に対してどのような方
向であっても効果は同じであり、数千ガウス程度までの
直流磁場が必要となる。炭素の添加はメルトに対して炭
素そのものが８ｉＣＯ形で直接加える方法による。以下
、本発明を実施例によシ具体的に説明する。An object of the present invention is to sufficiently and easily generate an IG effect in a silicon single crystal produced by the CZ method in a magnetic field, while suppressing thermal donors, reducing dopant unevenness, and suppressing warpage. In the present invention, interstitial oxygen-enriched gold of 6 to 11X10 cm,
The solid solution carbon concentration is set to 2 to 8 x 10"m-3, and a silicon wafer characterized in that it is produced from this is given.The CZ method in a magnetic field can suppress the oxygen concentration, but in this case, It is clear that an extremely long heat treatment is required for the IG effect to occur, and in order to shorten this time, it is necessary to add carbon.The solid solution carbon concentration is 2 to 8 x 10
cm 2 is suitable; if it is more than this, it is difficult to form a surface defect-free layer, and if it is less than this, it has become clear that there is no effect. The magnetic field has the same effect no matter what direction it is in with respect to the pulling direction, and a DC magnetic field of up to several thousand Gauss is required. Carbon is added directly to the melt in the form of 8iCO. Hereinafter, the present invention will be specifically explained using examples.
実施例
３０００ガウスの直流磁場中ＣＺ法によって引き上げら
れたシリコン単結晶を通常の方法で切りだしたシリコン
ウェーハ２種類、共に［Ｏｉ：］ ＝ ７ ｘｌｏ ｃ
ｍ であるが、一方は［Ｃ〕（１０”ｃｍ−” ＋一方
は〔Ｃ〕＝４×１０ｃｒｎ のウェーハに対して、１１
００℃、１６時間→５００℃、１６時間→６００℃。Example 3 Two types of silicon wafers were obtained by cutting silicon single crystals pulled by the CZ method in a direct current magnetic field of 000 Gauss using the usual method, both of which were [Oi:] = 7 xlo c
m, but one is [C] (10"cm-" + one is [C] = 4 x 10crn for a wafer, 11
00℃, 16 hours → 500℃, 16 hours → 600℃.
１６時間→７００℃、１６時間→１０００℃、４時間の
熱処理全行ない、内部欠陥及び、表面無欠陥層の状況を
調べた。［Ｃ］（１０ｍ のウェーハでは内部欠陥密度
は１０’ｍ−”以下であったが、［Ｃ：］＝４Ｘ１０
ｃｍ のウェーハでは１０ｍ 程度の内部欠陥及び幅５
０μｍの異面欠陥層が形成されており１、ＩＧ効果が、
充分期待できる状態であった。After performing the heat treatment for 16 hours at 700° C. and 16 hours at 1000° C. for 4 hours, internal defects and the condition of the surface defect-free layer were examined. [C] (In the 10m wafer, the internal defect density was less than 10'm-'', but [C:] = 4X10
cm wafer has an internal defect of about 10 m and a width of 5
A 0 μm different surface defect layer is formed, and the IG effect is
The situation was quite promising.
以上の実施例に示されるように、本発明によるウェーハ
はＩＧ効果を充分に示し、かつドーパントムラの抑制、
ソリの抑制、サーマルドナ抑制を可能にするものである
。ソリ、サーマルドナはいずれも酸素量が少い事による
効果である事は明らかである。As shown in the above examples, the wafer according to the present invention sufficiently exhibits the IG effect, and suppresses dopant unevenness.
This makes it possible to suppress warping and thermal damage. It is clear that both sledding and thermal donna are effects due to the low amount of oxygen.
Claims (1)
ラルスキ法シリコン単結晶から切り出されたシリコンウ
ェーハにおいて、格子間酸素濃度が６〜ｌｌＸｌ０ ｔ
ｍ 、固溶炭素濃度が２〜８ Ｘ １０１６ｃｒｎ−３
であることを特徴とするシリコンウェーッ・。In a silicon wafer cut from a Czochralski method silicon single crystal that was pulled from a crucible placed in a magnetic field, the interstitial oxygen concentration was 6 to 11X10 t.
m, solid solution carbon concentration is 2 to 8 x 1016 crn-3
A silicone material characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25013383A JPS60140716A (en) | 1983-12-27 | 1983-12-27 | Silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25013383A JPS60140716A (en) | 1983-12-27 | 1983-12-27 | Silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60140716A true JPS60140716A (en) | 1985-07-25 |
Family
ID=17203316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25013383A Pending JPS60140716A (en) | 1983-12-27 | 1983-12-27 | Silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60140716A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529326A (en) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | Manufacture of silicon wafer |
| JP2011037678A (en) * | 2009-08-13 | 2011-02-24 | Sumco Corp | Method for producing silicon single crystal, method for producing silicon wafer, and method for producing epitaxial wafer |
-
1983
- 1983-12-27 JP JP25013383A patent/JPS60140716A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529326A (en) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | Manufacture of silicon wafer |
| JP2011037678A (en) * | 2009-08-13 | 2011-02-24 | Sumco Corp | Method for producing silicon single crystal, method for producing silicon wafer, and method for producing epitaxial wafer |
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