JPS60137106A - Microwave voltage-tuned semiconductor oscillator - Google Patents

Abstract

PURPOSE:To adjust the frequency band of a voltage-tuned type microwave semiconductor oscillator by providing a varactor diode for tuning and a varactor diode for frequency adjustment on a transmission line which constitutes a resonator. CONSTITUTION:One terminal of the varactor diode 10 for frequency adjustment is connected to a gate electrode transmission line 2. A quarter-wavelength transmission line 11 short-circuits the other terminal of the diode 10 in terms of frequency. The voltage-tuned type microwave semiconductor oscillator constituted as mentioned above short-circuits the drain electrode transmission line 3 of a GaAs MESFET6, so the oscillator becomes unstable at high frequencies and obtains microwave electric power by the unstable operation. Further, the voltage tuning of oscillation frequency is attained by varying the junction capacity of the tuning varactor diode 7 connected to a terminal of the line 2 according to a bias voltage.

Description

[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a microwave semiconductor oscillator using a microwave integrated circuit (hereinafter referred to as MC) substrate. This invention relates to an improvement in a frequency band adjustment setting method in a pressure-tunable microwave semiconductor oscillator that can be tuned.

[Prior art]

Conventionally, there is a voltage-tuned microwave semiconductor oscillator of this type, a plan view of which is shown in FIG. In Figure 1, +
11 is a dielectric substrate made of ceramic, Teflon, etc. that has low dielectric loss in the microwave band; (2) to (
5) and (8) are microstrip lines made of a multilayer metal film of chromium and gold formed by vapor deposition or plating;
is the drain electrode transmission line, (4) is the output matching line, +
51&'i50Ω output #path, (6) is gate' electrode G,
Each drain electrode and source electrode S are valley lines!
21, t: (+ and (4)
Arsenic Metal Semiconductor Gikai Effect Transistor (IF
, (referred to as 8AθM S IIF3T), +7+ is a tuning varactor diode whose junction voltage is changed by changing the bias voltage, and (8) is a tuning varactor diode (174) for short-circuiting the varactor diode (7) in terms of frequency. It is a wavelength f transmission line, and is a dielectric chip for adjusting the oscillation frequency that is in contact with the (9)-gate electrode transmission line (2).

In the voltage-tuned microwave semiconductor oscillator configured in this manner, the drain depth mD of the GaAs MESFKT 161 is connected to the drain electrode transmission line +31 vc with a length of 1/4 wavelength, so that the drain electrode In
-14 It is short-circuited in terms of frequency. If the drain electrode of 0aAs) IJH8FET 161, which generally operates at static frequency, is shorted, GaAs MFiS FET
161 i”j +% frequency VC instability.

Therefore, the VCGaAs MF2B shown in the $1 diagram
A resonant circuit consisting of a gate electrode transmission line (21 and a tuning varactor diode (7)) is fully connected to the gate electrode σ side of FET 16, and a 5oΩ load with the same characteristic impedance as the 5oΩ load normally used in the microwave band is connected. Output m
Wt 15+ and GaAe MF! S FET (61
A microwave semiconductor oscillator can be constructed by matching the source electrodes S of the two.

The oscillation frequency is tuned by changing the junction capacitance of the tuning varactor diode 17) in response to the voltage applied to the tuning varactor diode t7).

In addition, tuning varactor diodes17) and GaAe M
In order to correct variations in oscillation frequency due to variations in the IiE circle 61 and the gate electrode transmission line (2), a dielectric chip (91) is placed on the gate electrode transmission line (2), and the dielectric chip (9) and gate electrode transmission The oscillation frequency is adjusted by the distance l from the line (2).The oscillation frequency decreases as the distance t is small, and increases as the distance t increases.

Since the conventional voltage-adjustable microwave semiconductor oscillator has a zero-M construction, (a) it is easy to design the oscillator, and (b) it is small and lightweight. No Yu 71. There are advantages.

'However, up to the above-mentioned conventional voltage-tuned microwave semiconductor optical @P, all gates 1 for adjusting the oscillation frequency were performed by the dielectric U body chip (9) on the polar transmission 1 gland 1 case (2). Therefore, it had the following flaws.

(a) Dielectric chip (9) and gate electrode transmission line (2)
) The divergence frequency changes by about 200 M7 with a change of 1 mm in the distance t. Therefore, when adjusting the oscillation frequency, the dielectric (9)
It is necessary to have a positional accuracy of 50 μm or more, which makes mass production difficult.

(b) Fixing the chip (9) on the dielectric substrate ill is done with epoxy resin, silicone resin, etc. after frequency adjustment, but the excavation frequency before and after fixing the chip (9) is 84%. The oscillation frequency may change due to influence, and it is necessary to readjust the oscillation frequency.

[I61 GA 4a key] This origin was developed to eliminate the drawbacks of the conventional method, and the GaAs FF1T gate electrode G
By arranging another frequency adjusting varactor diode in the gate electrode transmission line between the tuning varactor diode and the tuning varactor diode, a voltage-tunable microwave semiconductor oscillator whose frequency can be adjusted is provided. Examples of the present invention will be described below.

[Embodiments of the invention]

FIG. 2 is a plan view showing the configuration of a voltage-tunable microwave semiconductor oscillator according to an embodiment of the present invention. In FIG. 2, the same or corresponding parts as in FIG. 1 are indicated using the same symbols. In FIG. 2, (lO) is a frequency adjustment varactor diode whose one terminal is connected to the gate electrode transmission M l@ +2+ (the other terminal of this frequency adjustment varactor diode is shorted at high frequency). This is a 1/4 wavelength transmission line for

In the t-voltage tuned microwave semiconductor oscillator configured in this way, GaABMBB
Since the FET ($2 drain electrode transmission line 13) is short-circuited, it is unstable in terms of resonance frequency, and microwave power is obtained by this unstable effect. Further, the voltage tuning of the oscillation frequency is performed by changing the junction total bias voltage of the tuning parameter diode (7) connected to the end of the gate electrode transmission line (2), as in the conventional case. However, GaAs Ml! is FIT 161, tuning varactor diode (7), gate electrode transmission line (2) variation Kj, adjustment of fluctuation in oscillation frequency is by frequency e.
! 1 Adjustment of fA is performed using the junction capacitance gold bias voltage of the adjusting varactor diode 110). Therefore, this embodiment has the following advantages compared to conventional oscillators.

(a) Since the oscillation frequency is adjusted using voltage, the frequency adjustment accuracy has improved significantly from the conventional IOMH2 to IMH2.
Do 1.

(b) Unlike the case where a t-dielectric chip is fixed with resin for frequency adjustment, there is no need to adjust the oscillation frequency after fixation, so mass production is excellent.

In this example, GaAs ME! is used as the three-terminal microwave semiconductor active device. As mentioned above, the gate electrode G, drain electrode, and base electrode S can be replaced with the base electrode, collector electrode, and emitter electrode, respectively, which makes it possible to use it in microwave junction type transistors. Needless to say, it can be done.

〔Effect of the invention〕

As explained in detail above, the present invention provides a t-microwave semiconductor oscillator using a three-terminal microwave semiconductor element, in which a tuning varactor diode and a frequency adjustment varactor diode are installed in a transmission line constituting a resonator. This has the advantage that the frequency band of the voltage-tuned microwave semiconductor oscillator can be easily fully adjusted by fully adjusting the bias voltage of this frequency-adjusting varactor.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing an example of the configuration of a conventional voltage-tuned microwave semiconductor oscillator, and FIG. 2 is a configuration of an embodiment of the present invention.
FIG. In the figure, tll is a dielectric substrate, (2) is a gate electrode transmission line (resonator w!r), +31 is a drain polarization transmission line, (4) is an output matching line, (5) is a 50Ω output line, ( 6) is GaAs MKS FET (microwave semiconductor active element), +71 tuning varactor diode, 18) Fil/4 wavelength transmission line, (10) is varactor diode for oscillation frequency band adjustment, (Ill is 1/4 wavelength transmission It is a railroad. In addition, the same reference numerals in the diagrams are the same, and the same numbers indicate the corresponding parts. Agent: Masuo Oiwa Figure 2

Claims (1)

[Claims] (1) A 3-terminal microwave semiconductor active element built on a microwave integrated circuit board and connected so as to be unstable at high frequencies, one end of which is connected to one terminal of the 3-terminal microwave semiconductor active element and resonates. A transmission line forming a circuit, a tuning varactor diode connected to the other end of the transmission line, and a frequency band adjustment varactor diode connected between the one end and the other end of the transmission line. Microwave voltage-tuned semiconductor oscillator with (The 213-terminal microwave semiconductor active element is a field effect transistor, its drain electrode is short-circuited at high frequency, a transmission line 1 as a resonant circuit is connected to its gate electrode, and the microwave oscillation output is output from its source electrode. A microwave voltage-tuned semiconductor oscillator according to claim 1, which is characterized in that the microwave voltage-tuned semiconductor oscillator is configured to have a three-terminal microwave semiconductor active element. The microwave voltage-tuned semiconductor oscillator according to item 1.