JPS60136229A - Method for control of removing time - Google Patents
Method for control of removing timeInfo
- Publication number
- JPS60136229A JPS60136229A JP24331183A JP24331183A JPS60136229A JP S60136229 A JPS60136229 A JP S60136229A JP 24331183 A JP24331183 A JP 24331183A JP 24331183 A JP24331183 A JP 24331183A JP S60136229 A JPS60136229 A JP S60136229A
- Authority
- JP
- Japan
- Prior art keywords
- stripping
- light
- immersion
- removal
- removal liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000001514 detection method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000007654 immersion Methods 0.000 abstract description 15
- 239000007788 liquid Substances 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- 230000035699 permeability Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は剥離時間の制御方法にかかり、特に浸漬剥離装
置で使用される剥離液の疲労の程度を検出し浸漬剥離時
間を制御する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for controlling stripping time, and more particularly to a method for controlling immersion stripping time by detecting the degree of fatigue of a stripping solution used in an immersion stripping device.
化学的及び物理的方法によシ半導体素子を写真蝕刻する
際には、フォトレジストの剥離工程は不可欠である。When photo-etching semiconductor devices using chemical and physical methods, a photoresist stripping process is essential.
フォトレジストの剥離方法には、酸素プラズマを用いた
乾式剥離方法が公知である。A dry stripping method using oxygen plasma is known as a method for stripping photoresist.
乾式剥離方法は、フォトレジストの剥離については、満
足すべきものではあるが、剥離時間を長く要するため、
処理能力が劣る欠点を持っている。Although the dry stripping method is satisfactory in terms of stripping the photoresist, it requires a long stripping time.
It has the disadvantage of poor processing power.
との処理能力を向上させるため、乾式剥離方法の代替と
して浸漬剥離方法がある。An alternative to dry stripping methods is the immersion stripping method, which improves throughput.
浸漬剥離方法の特徴は、剥離処理槽にキャリア単位でウ
ェハを剥離することによって一度に多量に処理する事が
可能でかつ、乾式剥離方法に比較して、剥離時間が短く
てすむため、処理能力が高い。The characteristics of the immersion stripping method are that by stripping wafers in carrier units into a stripping treatment tank, it is possible to process a large number of wafers at once, and compared to the dry stripping method, the stripping time is shorter, resulting in higher processing capacity. is high.
浸漬剥離工程において、剥離液が新鮮であれば浸漬剥離
は、満足に行なわれるが、同一の剥離液を用いて半導体
ウェハを大量に処理すると処理液が次第に疲労し浸漬処
理効果が劣化してくる。特にポジレジストの場合は著る
しく劣化しやすく、剥離液の濃度の変化でその過程を観
察することができる。In the immersion stripping process, if the stripping solution is fresh, immersion stripping can be performed satisfactorily, but if a large number of semiconductor wafers are processed using the same stripping solution, the processing solution will gradually become fatigued and the immersion processing effect will deteriorate. . In particular, in the case of positive resist, it tends to deteriorate significantly, and the process can be observed by observing changes in the concentration of the stripping solution.
ここで問題となるのは、剥離液の劣化に比例して剥離速
度は低下してくるために、剥離液の劣化の程度に応じて
剥離処理時間を長くする必要があシ、適性な剥離処理時
間の条件を把握することが極めて困難となる。また連続
的もしくは断続的に半導体ウェハを浸漬剥離処理する場
合、フォトレジスト層を剥脱する半導体ウェノ・の領域
面積や処理枚数は不特定なため剥離液の疲労度の管理が
非常に困難な時には、満足ゆく浸漬剥離が行なわれない
こともある。The problem here is that the stripping speed decreases in proportion to the deterioration of the stripping solution, so it is necessary to increase the stripping time depending on the degree of deterioration of the stripping solution. It becomes extremely difficult to grasp the time conditions. In addition, when semiconductor wafers are subjected to continuous or intermittent immersion stripping treatment, the area of the semiconductor wafer from which the photoresist layer is stripped and the number of wafers to be treated are unspecified, making it extremely difficult to control the degree of fatigue of the stripping solution. Satisfactory immersion stripping may not be achieved.
本発明は、上記問題点を一挙に解決するもので、処理槽
内に充填された剥離液中に光線を照射して剥離液中を透
過した光線を検知し、その検知信号によシ剥離時間を制
御することを特徴とするものである。The present invention solves the above problems all at once by irradiating a light beam into a stripping solution filled in a processing tank, detecting the light beam that has passed through the stripping solution, and determining the stripping time based on the detection signal. It is characterized by controlling.
以下本発明の実施例を図面によって説明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図、第２図において、剥離液を充填した処理槽１の
所定の高さ位置に投光器２及び受光器３が槽内に臨ませ
て向き合わせてその対向壁面に設置されている。In FIGS. 1 and 2, a light emitter 2 and a light receiver 3 are installed at a predetermined height position of a processing tank 1 filled with a stripping liquid, facing into the tank and facing each other on opposing walls thereof.
本発明は、投光器２よυ処理槽１内に光線を照射し、処
理槽１内に収容された剥離液中を透過した透過光線を受
光器３で受け、その４６号を電気信号に変換して透過度
検出器４に入力し、透過度検出器４で常時剥離液の透過
度（濃度）を監視するものである。透過度検出器４は、
制御部５に接続される。制御部５は、剥離液の濃度に対
応した＊＜。In the present invention, a light beam is irradiated from a light projector 2 into a treatment tank 1, the transmitted light transmitted through a stripping liquid stored in the treatment tank 1 is received by a light receiver 3, and the signal No. 46 is converted into an electric signal. The permeability detector 4 constantly monitors the permeability (concentration) of the stripping solution. The transmittance detector 4 is
It is connected to the control section 5. The control unit 5 controls *< corresponding to the concentration of the stripping solution.
気信号を、キャリア搬出部６に指令を発し、キャリアの
搬出（浸漬剥離処理時間）を制御する。An air signal is issued to the carrier unloading section 6 to control the carrier unloading (immersion peeling processing time).
なお、その他必要によシ制御部５にベル、ラングあるい
は、処理槽１内の処理液の透過度を表示する計器類を設
けておくことによって聴覚的、視覚的に剥離液の状態、
疲労度を把握することができる。In addition, if necessary, the control unit 5 may be provided with a bell, a rung, or other instruments that display the permeability of the processing solution in the processing tank 1, so that the state of the stripping solution can be audibly and visually checked.
You can understand your fatigue level.
本発明は処理槽１に投光器２及び受光器３を設置し、処
理槽１内の透過光線を検知してその信号によシ自動的に
浸漬剥離時間を制御することが可能となるため、常に適
性かつ一定な条件の下で浸漬剥離処理を行なうことがで
きる。The present invention installs a light emitter 2 and a light receiver 3 in the processing tank 1, detects the transmitted light inside the processing tank 1, and automatically controls the immersion stripping time based on the signal. Immersion peeling treatment can be performed under appropriate and constant conditions.
本発明はまた投光器から照射する光の透過度で剥離液の
疲労度を継続的に検知するため、剥離液の疲労度を定量
的に確実に監視できる。Furthermore, since the present invention continuously detects the degree of fatigue of the stripping solution based on the transmittance of the light emitted from the projector, it is possible to quantitatively and reliably monitor the degree of fatigue of the stripping solution.
第１図は本発明方法を実施する装置のブロック図であり
、第２図は処理槽の要部を示す拡大斜視図である。
尚、図において、ｌ・・・・・・処理槽、２・・・・・
・投光器、３・・・・・・受光器、４・・・・・・透過
度検出器、５・・・・・・制御部、６・・・・・・キャ
リア搬出部、である。
篤 ７ 図FIG. 1 is a block diagram of an apparatus for implementing the method of the present invention, and FIG. 2 is an enlarged perspective view showing the main parts of a processing tank. In the figure, l...processing tank, 2...
- Emitter, 3... Light receiver, 4... Transmittance detector, 5... Control section, 6... Carrier unloading section. Atsushi 7 figure
Claims (1)
中を透過した光線を検知し、その検知信号によシ剥離時
間を制御することを特徴とする剥離時間の制御方法。A method for controlling a stripping time, comprising: irradiating a light beam into a stripping solution filled in a processing tank, detecting the light beam transmitted through the stripping solution, and controlling the stripping time based on the detection signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24331183A JPS60136229A (en) | 1983-12-23 | 1983-12-23 | Method for control of removing time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24331183A JPS60136229A (en) | 1983-12-23 | 1983-12-23 | Method for control of removing time |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60136229A true JPS60136229A (en) | 1985-07-19 |
Family
ID=17101942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24331183A Pending JPS60136229A (en) | 1983-12-23 | 1983-12-23 | Method for control of removing time |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136229A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658758A1 (en) * | 1993-12-17 | 1995-06-21 | International Business Machines Corporation | Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control |
| EP1283546A1 (en) * | 2001-08-08 | 2003-02-12 | Infineon Technologies AG | Method for detecting removal of organic material from a semiconductor device in a manufacturing process |
| US7077971B2 (en) * | 1999-12-21 | 2006-07-18 | Lam Research Corporation | Methods for detecting the endpoint of a photoresist stripping process |
-
1983
- 1983-12-23 JP JP24331183A patent/JPS60136229A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658758A1 (en) * | 1993-12-17 | 1995-06-21 | International Business Machines Corporation | Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control |
| US7077971B2 (en) * | 1999-12-21 | 2006-07-18 | Lam Research Corporation | Methods for detecting the endpoint of a photoresist stripping process |
| EP1283546A1 (en) * | 2001-08-08 | 2003-02-12 | Infineon Technologies AG | Method for detecting removal of organic material from a semiconductor device in a manufacturing process |
| US6709876B2 (en) | 2001-08-08 | 2004-03-23 | Infineon Technologies Ag | Method for detecting removal of organic material from a semiconductor device in a manufacturing process |
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