JPS60186021A - Controlling method of etching time - Google Patents
Controlling method of etching timeInfo
- Publication number
- JPS60186021A JPS60186021A JP4160384A JP4160384A JPS60186021A JP S60186021 A JPS60186021 A JP S60186021A JP 4160384 A JP4160384 A JP 4160384A JP 4160384 A JP4160384 A JP 4160384A JP S60186021 A JPS60186021 A JP S60186021A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- unit
- fatigue
- etchant
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 14
- 238000007654 immersion Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 108091008695 photoreceptors Proteins 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000219122 Cucurbita Species 0.000 description 1
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
イ、産業上の利用分野
本発明は、湿式エツチング処理時間の制御方法にかかり
、特に湿式エツチング装置で使用されるエツチング液の
疲労の程度を検出し、疲労の程度に応じ浸漬エツチング
処理時間を制御する方法に関するものである０
口、従来技術
従来、酸化硅素膜、多結晶硅素膜、窒化硅素膜等に対し
て、弗酸や燐酸等のエツチング液を用いて選択的にエツ
チングを行なう湿式エツチング方法が公知である。この
湿式エツチング方法の％徴は、エツチング処理槽に、キ
ャリア単位で半導体ウェーハをエツチングすることによ
って、一度に多量に処理する事が可能であるため、パタ
ーン寸法や精度の含びしくない工程には有効である。湿
式エツチング工程において、エツチング液が新鮮であれ
ば、湿式エツチングは、満足に行なわれるが、同一のエ
ツチング液を用いて半導体ウェーハを大量に処理すると
、エツチング液が次第に疲労し、浸漬処理効果が劣化し
でくる。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method for controlling wet etching processing time, and in particular detects the degree of fatigue of an etching solution used in a wet etching apparatus and detects the degree of fatigue. This relates to a method of controlling the immersion etching time according to the requirements of the etching process. A wet etching method is known. The characteristic of this wet etching method is that by etching semiconductor wafers in carrier units in an etching treatment tank, it is possible to process a large amount at one time. It is valid. In the wet etching process, if the etching solution is fresh, wet etching can be performed satisfactorily, but if a large number of semiconductor wafers are processed using the same etching solution, the etching solution will gradually become fatigued and the immersion processing effect will deteriorate. I will do it.
ここで問題となるのは、エツチング液の劣化に比例して
エツチング速度が低下してくるために、エツチング液の
劣化の程度に応じてエツチング処理時間を長くする必要
がアシ、適正なエツチング処理時間の条件を把握するこ
とが極めて困難となる。また、連続的、または断続的に
半導体ウェーハを浸漬エツチング処理する場合、エツチ
ング剥奪する半導体ウェーハの領域面積や、処理枚数は
不特定な為、エツチング液の疲労度の管理が非常に困難
で、満足のゆく浸漬エツチングが行なわれないこともあ
る。The problem here is that the etching speed decreases in proportion to the deterioration of the etching solution, so it is necessary to increase the etching time depending on the degree of deterioration of the etching solution. It becomes extremely difficult to understand the conditions. In addition, when semiconductor wafers are subjected to continuous or intermittent immersion etching, the area of the semiconductor wafers to be etched and the number of semiconductor wafers to be etched are not specified, so it is very difficult to control the degree of fatigue of the etching solution, making it unsatisfactory. In some cases, slow immersion etching is not performed.
ハ０発明の目的
本発明の目的は、エツチング液の疲労の程度を容易に把
握し、この疲労の程度に応じてエツチング時間を制御し
、エツチング液の疲労に関係なく伺時も適正々エツチン
グを可能にするエツチング処理時間の制御方法を提供す
るにある。The purpose of the present invention is to easily grasp the degree of fatigue of the etching solution, control the etching time according to the degree of fatigue, and perform etching appropriately regardless of the fatigue of the etching solution. An object of the present invention is to provide a method of controlling etching processing time that makes it possible to control the etching processing time.
二９発明の構成
本発明によれば、処理槽内に満たしたエツチング液中に
光線を照射し、前記エツチング液中を透過した光線を検
知し、この検知信号によシエッチング処理時間を制御す
る制御方法が得られる。29. Constitution of the Invention According to the present invention, a light beam is irradiated into an etching solution filled in a processing tank, the light beam transmitted through the etching solution is detected, and the etching processing time is controlled based on this detection signal. A control method is obtained.
ホ、実施例 つぎに本発明を実施例により説明する。E, Example Next, the present invention will be explained by examples.
第１図は本発明の一実施例のブロック系統図、第２図は
第１図の処理槽を示す斜視図である。第１図、第２図に
おいて、エツチング液を満たした処理槽１の相対する側
壁のうちの一方の側壁には投光器２が、他方の＊ｉｉｉ
には、投光器２から発せられた投射光を受ける受光器３
が設けられている。FIG. 1 is a block system diagram of an embodiment of the present invention, and FIG. 2 is a perspective view showing the processing tank of FIG. 1. In FIGS. 1 and 2, a projector 2 is mounted on one of the opposing side walls of a processing tank 1 filled with an etching solution, and a projector 2 is mounted on the other *iii
, a light receiver 3 receives the projection light emitted from the light emitter 2.
is provided.
投光器？から発せられた光は、処理槽１内のエツチング
液中を透過し、受光器３で受光される。受光器３は受光
量に応じた受光信号を発生し、透過度検出器４に加える
。透過度検出器４では、エツチング液の透過度（１１度
）を検知し、＃度に対応した電気信号を出力し、制御部
５に加える。制御部５は、濃度に対応した入力信号に応
じてキャリア搬出部６にキャリアの搬出（浸漬エツチン
グ処理時）を制御する電気信号を送シ、キャリアの搬出
を制御する。A floodlight? The light emitted from the processing tank 1 passes through the etching solution in the processing tank 1 and is received by the light receiver 3. The light receiver 3 generates a light reception signal according to the amount of light received and applies it to the transmittance detector 4. The transmittance detector 4 detects the transmittance of the etching solution (11 degrees), outputs an electrical signal corresponding to #degree, and sends it to the control section 5. The control section 5 sends an electric signal for controlling carrier discharging (during immersion etching) to the carrier discharging section 6 in accordance with an input signal corresponding to the concentration, thereby controlling the carrier discharging.
また、必要により、制御部５にはベル、ランプまたは計
器類を設けておいて、聴覚的、視覚的にエツチング液の
状態を把握するようにする。Further, if necessary, the control section 5 may be provided with a bell, lamp, or gauges so that the state of the etching solution can be grasped audibly and visually.
へ６発明の効果
本発明は処理槽１に投光器２及び受光器３を設置し、処
理槽ｌ内の透過光線を検知してその信号によシ自動的に
８２漬工ツチング時間を制御するととが可能となるため
に、常に適正かつ一定な栄件の下で浸漬エツチング処理
を行々うことかできる。6 Effects of the Invention The present invention installs a light emitter 2 and a light receiver 3 in the processing tank 1, detects the transmitted light in the processing tank 1, and automatically controls the 82 dipping time based on the signal. Therefore, the immersion etching process can always be carried out under appropriate and constant conditions.
さらに、投光器から照射する光の透過度でエツチング准
の疲労度を継続的に検知するため、エツチング液の疲労
の程度を足置的に確実に１祝できる。Furthermore, since the degree of fatigue in the etching process is continuously detected based on the transmittance of the light emitted from the projector, the degree of fatigue in the etching solution can be determined accurately.
第１図は、本発明の一実施例に係る方法を実施する装瓢
のブロック系統図、第２図は、処理槽の要部を示す斜視
図である。
ｌ・・・・・・処理槽、２・・・・・・投光器、３・・
・・・・受光器、４・・・・・・透過度検出器、５・・
・・・・制御部、６・・・・・・キャリア搬出部。FIG. 1 is a block system diagram of a gourd for carrying out a method according to an embodiment of the present invention, and FIG. 2 is a perspective view showing the main parts of a processing tank. 1... Processing tank, 2... Floodlight, 3...
...Receiver, 4...Transmittance detector, 5...
. . . Control unit, 6 . . . Carrier unloading unit.
Claims (1)
記エツチング液中を透過した光線を検知し、この検知信
号によりエツチング処理時間を匍御することを特徴とす
る浸漬エツチング処理時間の制御方法０゛A method for controlling immersion etching processing time, comprising: irradiating a light beam into an etching solution filled in a processing tank, detecting the light beam transmitted through the etching solution, and controlling the etching processing time based on this detection signal. 0゛
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160384A JPS60186021A (en) | 1984-03-05 | 1984-03-05 | Controlling method of etching time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160384A JPS60186021A (en) | 1984-03-05 | 1984-03-05 | Controlling method of etching time |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60186021A true JPS60186021A (en) | 1985-09-21 |
Family
ID=12612948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4160384A Pending JPS60186021A (en) | 1984-03-05 | 1984-03-05 | Controlling method of etching time |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60186021A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03179140A (en) * | 1989-11-18 | 1991-08-05 | Mercedes Benz Ag | Regulating method for drive slip |
| JPH04115789U (en) * | 1991-03-22 | 1992-10-14 | 株式会社エンプラス | IC socket |
| US7868642B2 (en) | 2004-05-25 | 2011-01-11 | 3M Innovative Properties Company | Socket for connecting ball-grid-array integrated circuit device to test circuit |
-
1984
- 1984-03-05 JP JP4160384A patent/JPS60186021A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03179140A (en) * | 1989-11-18 | 1991-08-05 | Mercedes Benz Ag | Regulating method for drive slip |
| JPH04115789U (en) * | 1991-03-22 | 1992-10-14 | 株式会社エンプラス | IC socket |
| US7868642B2 (en) | 2004-05-25 | 2011-01-11 | 3M Innovative Properties Company | Socket for connecting ball-grid-array integrated circuit device to test circuit |
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