JPS60136134U - 単結晶成長装置 - Google Patents

単結晶成長装置

Info

Publication number
JPS60136134U
JPS60136134U JP1984022015U JP2201584U JPS60136134U JP S60136134 U JPS60136134 U JP S60136134U JP 1984022015 U JP1984022015 U JP 1984022015U JP 2201584 U JP2201584 U JP 2201584U JP S60136134 U JPS60136134 U JP S60136134U
Authority
JP
Japan
Prior art keywords
crystal growth
single crystal
growth equipment
holding
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1984022015U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442911Y2 (enrdf_load_stackoverflow
Inventor
古賀　和幸
新名　達彦
中田　俊武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1984022015U priority Critical patent/JPS60136134U/ja
Publication of JPS60136134U publication Critical patent/JPS60136134U/ja
Application granted granted Critical
Publication of JPH0442911Y2 publication Critical patent/JPH0442911Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP1984022015U 1984-02-17 1984-02-17 単結晶成長装置 Granted JPS60136134U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984022015U JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984022015U JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS60136134U true JPS60136134U (ja) 1985-09-10
JPH0442911Y2 JPH0442911Y2 (enrdf_load_stackoverflow) 1992-10-12

Family

ID=30513928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984022015U Granted JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Country Status (1)

Country Link
JP (1) JPS60136134U (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002308697A (ja) * 2001-04-05 2002-10-23 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法並びに炭化珪素単結晶育成用種結晶の装着方法
JP2003504297A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
JP2011219337A (ja) * 2010-04-14 2011-11-04 Sumitomo Electric Ind Ltd 結晶の製造方法、結晶および半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138284A (en) * 1974-09-30 1976-03-30 Tokyo Shibaura Electric Co Itajotanketsushono seizohoho
JPS53147700A (en) * 1977-05-30 1978-12-22 Sharp Corp Method of producing silicon carbide substrate
JPS55100299A (en) * 1979-01-25 1980-07-31 Sharp Corp Production of silicon carbide crystal layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138284A (en) * 1974-09-30 1976-03-30 Tokyo Shibaura Electric Co Itajotanketsushono seizohoho
JPS53147700A (en) * 1977-05-30 1978-12-22 Sharp Corp Method of producing silicon carbide substrate
JPS55100299A (en) * 1979-01-25 1980-07-31 Sharp Corp Production of silicon carbide crystal layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003504297A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
JP2002308697A (ja) * 2001-04-05 2002-10-23 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法並びに炭化珪素単結晶育成用種結晶の装着方法
JP2011219337A (ja) * 2010-04-14 2011-11-04 Sumitomo Electric Ind Ltd 結晶の製造方法、結晶および半導体装置

Also Published As

Publication number Publication date
JPH0442911Y2 (enrdf_load_stackoverflow) 1992-10-12

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