JPS60136118A - Method of producing vacuum bulb - Google Patents

Method of producing vacuum bulb

Info

Publication number
JPS60136118A
JPS60136118A JP24417783A JP24417783A JPS60136118A JP S60136118 A JPS60136118 A JP S60136118A JP 24417783 A JP24417783 A JP 24417783A JP 24417783 A JP24417783 A JP 24417783A JP S60136118 A JPS60136118 A JP S60136118A
Authority
JP
Japan
Prior art keywords
chromium
contact
copper
vacuum
pulp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24417783A
Other languages
Japanese (ja)
Other versions
JPH056292B2 (en
Inventor
杉山 貞夫
功 奥富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24417783A priority Critical patent/JPS60136118A/en
Publication of JPS60136118A publication Critical patent/JPS60136118A/en
Publication of JPH056292B2 publication Critical patent/JPH056292B2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、真空パルプの製造方法に係9、特にその接点
の製造方法の改良(二関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for producing vacuum pulp, and particularly to improvements in a method for producing contacts thereof.

〔発明の技術的R#:とその問題点) 周知のように、太番1に高上土用の真空パルプの接点は
、銅(Cu)−クロム(Or)を主成分とした接点材料
から形成されている。この種の接点の特徴は、銅(Cu
) l二面溶度が殆んど零で熱也子放出が少なく、鋼(
Cu) j二比叔して耐溶着性(=優れたクロム(Cu
)と4I毬性(二曖れた鋼(Cu)を配付すること(二
より、優れた耐醪看性、耐鴫圧性及びしゃ断性を発揮す
ることCある。
[Technical R# of the invention: and its problems] As is well known, the vacuum pulp contacts for heavy soil use are made from contact materials mainly composed of copper (Cu) and chromium (Or). It is formed. This type of contact is characterized by copper (Cu)
) The dihedral solubility is almost zero and there is little release of heat, and the steel (
Cu) j Superior adhesion resistance (= excellent chromium (Cu
) and 4I barrier properties (2) by distributing unreliable steel (Cu) (2) by exhibiting excellent cold resistance, droop pressure resistance, and breaking properties.

ところで、真空しゃ断器は、小形4!I!電、メンテナ
ンスフリー、環境調オ■等の他の形式のしゃ断器(−比
較して優れた特徴をMするため、適用範囲が急速に拡大
されてきた。従来一般的(二使用されていた加臥以下の
1gl路からさらに大−流(例えば40〜60 KA)
 ノ回路(二、又、36KV以下の回路からさら(=高
鴫圧(例えば72KV以上)の回路に適用範囲が拡大さ
れている。
By the way, the vacuum breaker is small size 4! I! The scope of application has been rapidly expanding due to its superior features compared to other types of circuit breakers, such as electrical, maintenance-free, and environmentally controlled circuit breakers. Larger flow (e.g. 40-60 KA) from 1 gl tract below
The range of application has been expanded from circuits with a voltage of 36 KV or less to circuits with a high voltage (for example, 72 KV or more).

このような真空しゃ断器の大−流化や高1王化にff−
なって、接点イi性の向上も要求されてきた。
ff- as vacuum breakers become more popular and become more popular.
Therefore, there has been a demand for improved contact quality.

曖れた耐溶着性、#磁圧性は、接点の小形化を通じて真
空バルブの小形化、さら4二は真空しゃ断器全体の小形
化(二貢献するのC1上H己した通用範囲の拡大には必
要小町欠の特性といえる。しかして、接点の耐電圧性は
、接点材料の合金の融点、硬度。
The unreliable welding resistance and magnetic pressure properties are achieved by making the vacuum valve more compact through the miniaturization of the contacts, and further by making the entire vacuum breaker smaller (2) This contributes to the expansion of the applicable range of C1. This can be said to be a necessary characteristic.However, the voltage resistance of a contact depends on the melting point and hardness of the alloy of the contact material.

蒸気圧、溶層防止成分の瀘及びその分布形層が大きく関
与する。
Vapor pressure, filtering of components to prevent the melt layer, and their distribution form play a major role.

一方、銅(Cu)−クロム(Cr)系の接点は、周卸の
タングステン(W)(融点3380 C,沸点6000
C)−銅(Cu)系合金(=比較し−〔、タンゲス与ン
CW)よりかなり融点の低いクロム(Or) (融点1
875℃、沸点2430 G)を土成分としているため
4二、アーク熱(二より高温になった高融点金属から放
出される熱(子が、タングステン(W)−銅(Cu)系
接点鴫;比較して低く、熱砥子の放出により@生する磁
流消滅後の絶縁耐力の同区阻害は軽減される特徴を有し
ている。
On the other hand, copper (Cu)-chromium (Cr) system contacts are made of tungsten (W) (melting point 3380 C, boiling point 6000 C).
C) - Chromium (Or) (melting point 1
875℃, boiling point 2430G) as a soil component, 42, arc heat (heat released from a high melting point metal at a higher temperature than 2). It is comparatively low, and has the characteristic that the same area inhibition of the dielectric strength after the magnetic current generated by the discharge of the hot abrasive disappears is reduced.

しかしながら、クロム(Cr)は、きわめて酸化しやす
い金属である。又、形成された酸化物は、水素又は真空
中できわめて解離しζニくいため、接点製作後最終的舊
二真空封着する真空バルブの製作過程において、接点表
面が大気中の水分や酸素その他のガス等により汚染され
やすい。しかして、接点表面が汚染された場合には、真
空バルブのしゃ断性や耐電圧性(=悪影響を及ぼすので
、真空封着前の接点の取扱いしはきわめて厳重な営埋が
必要となp、これが真空パルプ製作上の大きな問題とな
っていた。
However, chromium (Cr) is a metal that is extremely easily oxidized. In addition, the formed oxide is extremely difficult to dissociate in hydrogen or vacuum, so during the manufacturing process of the vacuum valve, which is the final vacuum seal after the contact is manufactured, the contact surface is exposed to atmospheric moisture, oxygen, etc. easily contaminated by gases, etc. However, if the contact surface becomes contaminated, it will have a negative effect on the vacuum valve's shutoff performance and voltage resistance, so the contacts must be handled with extreme care before vacuum sealing. This has been a major problem in vacuum pulp production.

又、銅(Cu)−クロム(Or)系接点の耐溶着性を向
上させる手段として、接点の表面f:高エネルギー密度
熱源で部分的(=溶融冷却するもの(特開昭57−50
2144号公報)が提案されている。しかし、このno
でも、溶融冷却するタイミングを適正(−選ばないと、
溶融冷却後の接点表面が封″4繭鴫二既に汚染されてし
まい、真空バルブのしゃ断性や耐m4性を低下させてし
まう。
In addition, as a means to improve the welding resistance of copper (Cu)-chromium (Or) based contacts, the surface f of the contact is partially melted and cooled with a high energy density heat source (Japanese Patent Laid-Open No. 57-50
No. 2144) has been proposed. However, this no
However, if you don't choose the right timing for melting and cooling,
The surface of the contact after melting and cooling is already contaminated with the seal, reducing the shutoff performance and m4 resistance of the vacuum valve.

したがって、鋼(Cu)−クロム(Cr)系の接点を備
えた真空バルブを製作する場合Cニは、この接点の製作
から最終の封着Cニ至るまでの間に、接点の特性を低下
させない製造方法が必要となる。
Therefore, when manufacturing a vacuum valve with steel (Cu)-chromium (Cr) system contacts, the characteristics of the contacts will not deteriorate during the period from the manufacture of the contacts to the final sealing C2. A manufacturing method is required.

〔発明の目的〕[Purpose of the invention]

本発明は、上記した事情に遁みなされたもので、銅(C
u)−クロム(Cr)系の接点を備えた真空バルブの製
造方法(二おいて、接点表面の汚染がなく、しや41性
や耐溶着性の向上を計った真空バルブの製造方法を提供
することを目的とする。
The present invention was made in the light of the above-mentioned circumstances, and is based on copper (C
u) - Method for manufacturing a vacuum valve equipped with chromium (Cr)-based contacts (Secondly, providing a method for manufacturing a vacuum valve that does not cause contamination on the contact surface and has improved shrinkage and welding resistance) The purpose is to

〔発明の概要〕[Summary of the invention]

本発明は、接点を固層した通鴫軸を端板6二取着し、し
かる匝この端板倉絶縁谷器鑞;封涜する真空バルブの製
造方法において、接点金銅(Cu)とクロム(Cr)の
焼結体の表面に、100μm以下の銅(Cu)もしくは
クロム(Cr)の単体1−又は合盆膚を最終茨面層が銅
(eu)となるようCニーrtfz以上付着させ、この
後高エネルギー密度を有する熱源で加熱して合金化させ
ること(二よシ、接点表面の汚染が少なく、しゃ断性や
耐溶着性を低下させることのない真空バルブの製造方法
である。
The present invention provides a method for manufacturing a vacuum valve in which a through shaft with solidified contacts is attached to two end plates 6, and the end plates are sealed with an insulating valley. ) Copper (Cu) or chromium (Cr) of 100 μm or less is adhered to the surface of the sintered body by C-neer rtfz or more so that the final thorny surface layer is copper (eu). This is followed by heating and alloying with a heat source with high energy density (secondarily, this is a method for manufacturing vacuum valves that causes less contamination of the contact surface and does not reduce the shutoff performance or welding resistance.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の一実施?IIt−図面(二ついて説明する
Is the following an implementation of the present invention? IIt-Drawings (explained using two).

まず、本発明嘔:関連する真空バルブの全体構成を第1
図を参照して一説明する。真空容器1は、アルミナ磁器
材から形成された絶縁容器2、この絶縁容42の両端と
熱膨張係数が絶縁容器2に近似する鉄(Fa) −=ツ
ケル(Ni ) −コバルト(Co) 系又は妖(Fe
)−ニッケル(Ni )系合金から形成された端板3a
及び3bとから4成され、内部圧力が10−’ Tor
r以上の真空としたものである。この真空容器1の内g
(=は、一対の接離自在としかつ接点を備えた磁極4a
、4bが設けられている。この磁極の一方の4a仁は例
えば無酸素鋼からなる固定通峨軸5aが取付けられ、端
板3aを気□密艦=貞通して外g1:、導出されてお9
、他方の4bl二は同様し無酸素鋼からなるaT動通亀
軸5bが取付けられ、例えばステンレス材から形成され
たベローズ6を介して端板3bl=取付けられ、真空保
持状態で峨礁4a及び4bの接離自在を可能としている
。磁極4a及び4bの周囲を取巻くようにアークシール
ド7が設けられ、−光開閉器(=磁極4a及び4bから
発生する金属蒸気が絶縁容器2の内壁に付着するのを防
止している。
First, the overall structure of the related vacuum valve according to the present invention will be explained in the first place.
An explanation will be given with reference to the drawings. The vacuum container 1 includes an insulating container 2 made of an alumina porcelain material, and an iron (Fa)-=Ni-cobalt (Co) system or a thermal expansion coefficient similar to that of the insulating container 2 at both ends of the insulating container 42. Fairy (Fe)
)-end plate 3a formed from a nickel (Ni) alloy
and 3b, and the internal pressure is 10-' Tor
The vacuum is greater than r. The inside g of this vacuum container 1
(= represents a pair of magnetic poles 4a that can be freely approached and separated and equipped with contacts.
, 4b are provided. A fixed threaded shaft 5a made of, for example, oxygen-free steel is attached to one side 4a of this magnetic pole, and the end plate 3a is passed through the air □ secret ship = Teida and guided out.
, the other 4bl2 is similarly attached with an aT moving turtle shaft 5b made of oxygen-free steel, and the end plate 3bl is attached via a bellows 6 made of stainless steel material, for example, and the reef 4a and 4b can be freely moved in and out of contact. An arc shield 7 is provided to surround the magnetic poles 4a and 4b, and prevents metal vapor generated from the magnetic poles 4a and 4b from adhering to the inner wall of the insulating container 2.

次(二、上記構成をなす真空バルブの製造方法(二つい
て説明する。最初(=、本発明に使用する接点を第2図
について説明する。同図Cニおいて、10はクロム(O
r) 11と銅(Cu) 12の焼結体で、この焼結体
■0の一方の表面(二、銅(eu) 13とりC’ ム
(Cr) 14の薄膜をAg!、蒸着(二よシ付腐させ
て接点を形成する。この薄膜の厚さは、後で行なう表面
溶融の条件や接点(二要求される時性イニより選択され
るが、100μm以下とするのが過当でおる。もし、4
膜が厚いと、後(二行なう表面俗融(=大きなエネルギ
ーを必要とし、溶融処理時間が長くなる等実用上不利と
なる。又、クロム(Or) 14と銅(Cu) 13の
各付着厚さも成分比が適正な値になるよう(二選択する
。次に、上記した接点に通磁軸5aをろう付けrる。な
お、4流をしゃ断すると含アークを駆動するコイルを設
ける場合もあるが、本実施列では省略[る。第3図(二
おいて、銅(Cu) 13とクロム(Cr)14の薄膜
が付着された焼結体10と通磁軸5aを、水素又は10
−’ Torr以上の真空中でろう付けし、ろう封部1
5aを得る。このろう付$15aの信頼性を向上させる
ため(=、ろう付は圓にも1m (Cu)/舗を付着さ
せておいてもよい。なお、通磁軸5bl二ついても、同
様)二して焼結体10をろう付けする。又、このろう付
は後通峨軸5aは端板3aに、通磁軸5b はベローズ
6を介して端板3bにそれぞれろう付けする。
Next (2) A method for manufacturing a vacuum valve having the above structure (two explanations will be given). First (=, the contacts used in the present invention will be explained with reference to Figure 2.
r) With a sintered body of 11 and copper (Cu) 12, a thin film of copper (eu) 13 and C' 14 was deposited on one surface of this sintered body The thickness of this thin film is selected depending on the surface melting conditions to be performed later and the required time characteristics of the contact, but it is reasonable to set it to 100 μm or less. .If, 4
If the film is thick, it will be disadvantageous in practice, as it will require a large amount of energy and the melting time will be long after the subsequent surface melting. Then, braze the magnetizing shaft 5a to the above-mentioned contacts so that the component ratio becomes an appropriate value (select 2).In addition, when cutting off the 4 currents, a coil may be installed to drive the arc-containing current. However, this is omitted in this embodiment.
-' Brazed in a vacuum of Torr or more, and solder sealing part 1
Get 5a. In order to improve the reliability of this brazing $15a (=, 1m (Cu)/brazing may also be attached to the round. The same applies even if there are two magnetic shafts 5bl). Then, the sintered body 10 is brazed. After this brazing, the pass-through shaft 5a is brazed to the end plate 3a, and the magnet-passing shaft 5b is brazed to the end plate 3b via the bellows 6.

次(=、上目己した通磁軸5ai=ろう付けした焼結体
10の銅(Cu) 13とクロム(Cr) 14の薄膜
表面(=電子ビーム又はレーザのような高エネルギー密
度を有する熱源で加熱して溶融させる。第4図において
、1子銃16から放射される成子ビーム17を、銅(C
u)とクロム(Cr)の薄膜に照射し溶融させる。なお
、同図に示す符号18は峨子銃16に高峨圧を付加する
ケーブル、19は電子ビーム17の照射(二より鋼(C
u)とクロム(Or)の薄膜が溶融凝固した部分を示す
Next (=, upper magnetic axis 5ai= thin film surface of copper (Cu) 13 and chromium (Cr) 14 of brazed sintered body 10 (=heat source with high energy density such as electron beam or laser) In FIG. 4, the beam 17 emitted from the single gun 16 is
A thin film of u) and chromium (Cr) is irradiated and melted. In addition, the reference numeral 18 shown in the same figure is a cable that applies high pressure to the Zeko gun 16, and 19 is a cable that applies the electron beam 17 (two-stranded steel (C)).
This shows the melted and solidified portion of the thin film of u) and chromium (Or).

この靜融凝固した部分の金属組織は、高エネルギー密度
の鑵子ビーム17により、急速(=溶融され凝固したも
のであるから、クロム(Cr)と銅(Cu)がきわめて
微細に混合した状態(二なりている。さら(=、電子ビ
ーム17を10−’Torr以上の^真空中で照射rる
ため、溶融凝固された部分は、七の、!!七面を冨めて
きわめて清浄な状態(ニなっている。
The metal structure of this molten and solidified part is rapidly melted and solidified by the high-energy-density forceps beam 17, so the metal structure is a very fine mixture of chromium (Cr) and copper (Cu). Furthermore, since the electron beam 17 is irradiated in a vacuum at a temperature of 10-'Torr or more, the melted and solidified part is in an extremely clean state with seven faces. (It's turning.

この清浄であることは、後述する接点の1δ頼性の向上
4二寄与している。なお、通磁軸5b17)場合も同様
(ニして、焼結体10のm(Cu)とクロム(Or)の
薄膜(ニ也子ビーム17を照射し−C溶融凝固する。次
(二、この通磁軸5aやアークシールド7flが取着さ
れて部分組立上された端板3aと絶縁容42を、to”
−’ Torr以上の商真空中でろう付けし封虐する。
This cleanliness contributes to improving the 1δ reliability of the contact, which will be described later. Similarly, in the case of the magnetization shaft 5b17), the thin film of m(Cu) and chromium (Or) of the sintered body 10 (-C melted and solidified by irradiating the sintered body 10 with the Niyako beam 17).Next (2) The end plate 3a and the insulating capacitor 42, which are partially assembled with the magnetic shaft 5a and the arc shield 7fl attached, are
-' Braze and seal in a commercial vacuum of Torr or more.

なお、端板3b L))場合は、ベローズ6t−介して
通磁軸5bが取着され部分組立をされるが、同様にして
P3縁谷器2(ニろう付けされ封着される。
In the case of the end plate 3b (L)), the magnetic shaft 5b is attached via the bellows 6t and partially assembled, but the P3 edge plate 2 is similarly soldered and sealed.

このようにして製作するので、接点表向(二組(Cu)
とクロム(Cr)がきわめて微細に晶付された1−が形
成され、しかもその表面の汚染がきわめて少ない接点金
偏えた真壁バルブを得ることができる。
Since it is manufactured in this way, the contact surface (two sets (Cu))
It is possible to obtain a true wall bulb in which contact metal 1- is formed in which chromium (Cr) is extremely finely crystallized, and the surface of the contact metal 1- is extremely free from contamination.

なお、上述の説明では、接点表向の付着J−を、銅(C
u)が2層とクロム(Cr)がi7−としたが、銅(C
u)を1ノーとしてもよく、鋼(Cu)とクロム(Cr
)の合金層を付着させるよう(ニしてもよい。又、付着
する方法は真空蒸着以外(=、メッキ、溶射、圧4等の
何れでもよい。
In addition, in the above explanation, the adhesion J- on the surface of the contact is replaced with copper (C
u) is two layers and chromium (Cr) is i7-, but copper (C
u) may be set to 1 no, steel (Cu) and chromium (Cr
) The alloy layer may be attached (d).Also, the method of attachment may be any method other than vacuum deposition (=, plating, thermal spraying, pressure 4, etc.).

次に、不発iJA を咀周連した実験クリを比較のため
(二行なった参考例と併せて説明する。
Next, for comparison, an experimental chestnut in which unexploded iJA was chewed will be explained together with a reference example in which two tests were performed.

粒径が約100μmのクロム(Cr)を用い、30wt
%のクロム(Cr)をt4frる一S<CU>−クロム
(Cr)スケルトンを水素中1150°Cで仮焼結後、
水素中1150′Cで銅(Cu)を溶浸し、最後曲(二
40%のクロム(Cr)を含有するACCu)−クロム
(Cr)付会を2組製作した。このうち、1組は、脱脂
洗浄し直(二従来の方法(二よ9通磁軸(二j4L4し
た後、真空封着して真空バルブを製作した(参考例1)
。他の1組は、脱脂洗浄し導鴫軸に取着した後、上述の
順序Cニよ少4Oチ銅(Cu)−クロム(Cr )ペー
ス合金の表面(=、銅(Cu)とりaム(Cr)の薄膜
を+ 30 /Am付着させ、しかる後、電子ビームに
よって薄膜を#融し合金化させると共に、上記40%ク
ロム(Cr) −銅(Cu)ペース合金と一体化し、こ
の後真空封着をして真空パルプを製作したく実験例1)
。なお、ル子ビ−−ムは、加速磁圧30KV、ビーム越
流50 mAで照射し1こ。
Using chromium (Cr) with a particle size of approximately 100 μm, 30 wt.
After pre-sintering the chromium (Cr) skeleton at 1150°C in hydrogen,
Two sets of final curves (ACCu containing 40% chromium (Cr))-chromium (Cr) fittings were fabricated by infiltrating copper (Cu) at 1150'C in hydrogen. Of these, one set was re-degreased and cleaned (2) using the conventional method (2-9 magnetic shaft (2J4L4), and then vacuum sealed to create a vacuum valve (Reference Example 1)
. The other set was degreased and cleaned and attached to the lead shaft, and then the surface of the copper (Cu)-chromium (Cr) paste alloy (=, copper (Cu) and am (Cr) thin film is deposited at +30/Am, then the thin film is melted and alloyed by an electron beam, and is integrated with the above 40% chromium (Cr)-copper (Cu) pace alloy. Experimental example 1) to produce vacuum pulp by sealing
. In addition, the electron beam was irradiated with an accelerating magnetic pressure of 30 KV and a beam overflow of 50 mA.

これらの耐溶着性を第1表(二示す゛。The welding resistance of these is shown in Table 1 (2).

この第1表から明らかなように、電子ビーム(二より表
面処理した実施し111では、耐溶着性の大幅な向上が
得られた。これは、クロム(Or)が0.1μm又はそ
れ以下(=微細化さiL、4層の土な原因となる銅(C
u)同志の接触の確率が者しく少なくなった効果(二よ
るものと考えられる。
As is clear from Table 1, the welding resistance of Example 111, which was subjected to electron beam (secondary surface treatment), was significantly improved. = Refinement iL, copper (C
u) The effect that the probability of contact between comrades has decreased significantly (this is thought to be due to two factors).

次(−1実験列lと参考例1の真空封着直前の接点の弐
面活流状悪を接触抵抗法によって比較した。
Next, the conditions of active current on the second surface of the contacts of Experimental Series 1 and Reference Example 1 immediately before vacuum sealing were compared using the contact resistance method.

ここC1参考例2は、参考例1と同じ接点(二実施例1
と同じ条件の磁子ビームを照射したものである。
Here, C1 Reference Example 2 has the same contact as Reference Example 1 (2 Example 1
It was irradiated with a magneton beam under the same conditions as .

これらの接触抵抗を第2表6=示す。These contact resistances are shown in Table 2.

との第2表から判るように、参考例1では接触抵抗の高
い品位が惚めて多く、実験的1には全くない。又、参考
例2から(も薄膜の効果が明瞭である。これと対応して
、靜耐峨圧も低い。なお、実験例1では、銅(Cu) 
、クロム(Or)の薄膜は、谷Jμmとしたが、これが
100μm以上では磁子ビーム仁よる溶融、音強化の効
率が悪く、十分なる均一した微細化が得られない。又、
ペース合金と一体化した後の組成の調整も困−でおるか
ら、100μm以下が好ましい。
As can be seen from Table 2, Reference Example 1 had a lot of high quality contact resistance, while Experimental Example 1 had none at all. Also, from Reference Example 2, the effect of the thin film is clear. Correspondingly, the high pressure resistance is also low. In Experimental Example 1, copper (Cu)
The chromium (Or) thin film has a valley of J μm, but if the valley is more than 100 μm, the efficiency of melting and sound reinforcement by the magneton beam is poor, and sufficient uniform miniaturization cannot be obtained. or,
Since it is difficult to adjust the composition after integration with the pace alloy, the thickness is preferably 100 μm or less.

さら(二、耐4層性(二ついては、外径25I8堪の円
板状接点試料(二、外径25順で先端が11001tの
半径をもつ球面の加圧ロンドを対向させて(資)IC4
Iの荷重を加え、10−%lfi HgのA空中でm 
Hz 、 18 KAの峨流を半波υiE L、そのと
きの接点の引き外し力で1足したものCある。接触抵抗
については、先端が球状ご直径1#IJlの白金探針を
上記接点表面上を移動させ、接点と日釡深針間(二l 
mAのit vif: t−流したときのlliを示し
た。静耐嘔圧(二ついては、バフ研磨(二より鏡面匝上
tした直径5鵡のニッケル針金陽極とし、上記接点を哄
桃として、ギヤツブ長上Q、5 tryとし両者間の磁
圧を保々し上昇させ、スパークを発生したときの鴫圧匝
を示す。
In addition, (2) 4-layer resistance (2) Disc-shaped contact samples with an outer diameter of 25I8 (2) IC4 with spherical pressure ronds with a radius of 11001t at the tip facing each other in the order of outer diameter 25
m in A air of 10-% lfi Hg with a load of I applied.
There is a half-wave υiE L of the Hz, 18 KA torrent, and 1 added by the contact tripping force at that time C. Regarding the contact resistance, a platinum probe with a spherical tip and a diameter of 1 IJl was moved over the surface of the contact, and a distance between the contact and the deep needle (2 l) was measured.
mA it vif: lli when t-flowed is shown. Resistance to static emphysema (secondly, buff polishing): A nickel wire anode with a diameter of 5 mm was polished to a mirror-like surface, and the above contact point was used as a peg. Shows the pressure when raised and a spark is generated.

〔発明の効果J 本@明は、以上のよう4二構成されているから、(1)
 接点表面に、クロム(Cr)の酸化物が形成さオシる
ことがなく活流されないので、接触抵抗が壇太しない。
[Effect of the invention J Since the book @ Ming is composed of 42 as described above, (1)
Since chromium (Cr) oxide is not formed on the contact surface and is not activated, the contact resistance does not increase.

(2)接点表面が、銅(Cu)とクロム(Or)が極め
て微細(二分散した金属組繊(ニなるので、耐溶着性が
Kれている。
(2) The contact surface has extremely fine (bidispersed) metal fibers of copper (Cu) and chromium (Or), so the welding resistance is excellent.

等の多くの利点を備えた真空パルプを裏作することがで
きる。
It is possible to produce vacuum pulp with many advantages such as

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に関連するA組パルプの構成を示す断面
図、第2図は不発明の一実施例の接点の断面図、第3図
は本発明の一実踊列の接点6二通磁軸を固着した状態を
示す断面図、第4図は本発明の一実施列の接点表向の4
膜を4融凝固させる方法を示す説明図である。 1・・・真空容器、 3a、3b・・・端板4a+ 4
b・・・ル極、 5a、5b・・・通成軸10・・・焼
結体、 11・・・クロム粒12・・・蛸、 13・・
・銅の薄膜 14・・・クロムの薄膜 17・・・1子ビーム(87
33)代理人 弁理士 猪 股 祥 晃(はが1名)第
 1 図 第 2 図 第 3 図
FIG. 1 is a sectional view showing the structure of Group A pulp related to the present invention, FIG. 2 is a sectional view of a contact point according to an embodiment of the present invention, and FIG. FIG. 4 is a cross-sectional view showing a state in which the magnetic shaft is fixed, and FIG.
FIG. 3 is an explanatory diagram showing a method of four-melting and solidifying a film. 1... Vacuum container, 3a, 3b... End plate 4a+ 4
b... Lupole, 5a, 5b... Threaded shaft 10... Sintered body, 11... Chrome grain 12... Octopus, 13...
・Thin copper film 14... Thin film of chromium 17... Single beam (87
33) Agent Patent attorney Yoshiaki Inomata (one person) Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 (リ 接点を固着した進上+1111を端板(=重層し
、しかる仮この端板(!−絶縁谷器國封着する真空パル
プの製造方法(二おいて、前記接点を銅(Cu) とク
ロム(Or)の焼結体の表面に、100μm以下の銅(
Cu)もしくはクロム(Cr)の単体ノー又は合金層を
J&終表向層がii’l (Cu)となるよう(ニーj
−以上付着させ、この後高エネルギー6!度をiする熱
源で加熱して合金化させることを特徴とする真空パルプ
の製造方法。 L2) jI+1(Cu)もしくはクロム(er)の単
体層又は合金層を、蒸層、メッキ、俗射又は圧着により
焼結体の表面(=1善けることを・taliLとする特
N′F請求の軛四第1項目凸成の真空パルプの製造方法
。 (3) 接点の通1籠軸と固着する面に銅(Cu) I
li!を付着させておくことを特徴とする脣fF 請求
の範囲第1項記載の具仝パルプの製造方法。
[Scope of claims] Copper (100 μm or less) is deposited on the surface of a sintered body of copper (Cu) and chromium (Or).
Cu) or chromium (Cr) alone or alloy layer so that the final surface layer is ii'l (Cu) (knee j
- After attaching more than that, high energy 6! A method for producing vacuum pulp, which comprises heating and alloying with a heat source having a temperature of i. L2) A special N'F claim in which a single layer or an alloy layer of jI+1 (Cu) or chromium (er) is formed on the surface of a sintered body (=1 = taliL) by vaporizing, plating, spraying, or pressure bonding. 4th Item 1. Method for producing convex vacuum pulp. (3) Copper (Cu) I on the surface of the contact that is fixed to the cage shaft.
li! The method for producing a pulp according to claim 1, characterized in that the pulp is made to adhere to a pulp.
JP24417783A 1983-12-26 1983-12-26 Method of producing vacuum bulb Granted JPS60136118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24417783A JPS60136118A (en) 1983-12-26 1983-12-26 Method of producing vacuum bulb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24417783A JPS60136118A (en) 1983-12-26 1983-12-26 Method of producing vacuum bulb

Publications (2)

Publication Number Publication Date
JPS60136118A true JPS60136118A (en) 1985-07-19
JPH056292B2 JPH056292B2 (en) 1993-01-26

Family

ID=17114906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24417783A Granted JPS60136118A (en) 1983-12-26 1983-12-26 Method of producing vacuum bulb

Country Status (1)

Country Link
JP (1) JPS60136118A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141226A (en) * 1986-12-01 1988-06-13 株式会社東芝 Vacuum valve
JP2004273342A (en) * 2003-03-11 2004-09-30 Toshiba Corp Contact material for vacuum valve, and vacuum valve
JP2012004076A (en) * 2010-06-21 2012-01-05 Toshiba Corp Vacuum valve contact and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141226A (en) * 1986-12-01 1988-06-13 株式会社東芝 Vacuum valve
JP2004273342A (en) * 2003-03-11 2004-09-30 Toshiba Corp Contact material for vacuum valve, and vacuum valve
JP2012004076A (en) * 2010-06-21 2012-01-05 Toshiba Corp Vacuum valve contact and manufacturing method thereof

Also Published As

Publication number Publication date
JPH056292B2 (en) 1993-01-26

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