JPS60133716A - Method of forming magnetic anisotropic permalloy layer - Google Patents
Method of forming magnetic anisotropic permalloy layerInfo
- Publication number
- JPS60133716A JPS60133716A JP59246962A JP24696284A JPS60133716A JP S60133716 A JPS60133716 A JP S60133716A JP 59246962 A JP59246962 A JP 59246962A JP 24696284 A JP24696284 A JP 24696284A JP S60133716 A JPS60133716 A JP S60133716A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- nitrogen
- sputtering
- permalloy
- permalloy layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、小さな保磁力強度１Ｈｃ）をもつ磁気異方性
パーマロイ層をスパッタリング被覆によって生成する方
法に関する。小さなＨｅをもつパーマロイ層は、種々の
用途に必要である。例えば薄膜磁気ヘッド用として、陰
極スパッタリングによって被覆された数マイクロメータ
の厚さのパーマロイ層（Ｎｉ／Ｆｅ約８０／２０）が必
要である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a method for producing magnetically anisotropic permalloy layers with a low coercive strength (1Hc) by sputter coating. Permalloy layers with small He are required for various applications. For example, for thin film magnetic heads, a few micrometers thick permalloy layer (Ni/Fe approximately 80/20) coated by cathodic sputtering is required.
従来の高周波ダイオードスパッタリング（ＲＦ＝無腺周
波数）による通常の方法では、約３μｍ／ｈまでのスパ
ッタリング率が得られる。その場合、吹付は気体として
アルゴンが使用される。The usual method with conventional radio frequency diode sputtering (RF=no frequency) gives sputtering rates of up to about 3 μm/h. In that case, argon is used as the gas for spraying.
従来、磁界の支持によるスパッタリング被覆方法（マグ
ネトロンスパッタリング被覆）は、ターゲット内の磁気
短絡によって磁気ターゲットがマグネトロンリングの形
成を阻止するため、パーマロイには使用されていない。Traditionally, magnetic field supported sputter coating methods (magnetron sputter coating) have not been used for permalloy because magnetic shorts in the target prevent the magnetic target from forming magnetron rings.
しかしながら特定の装置（通常より高い磁界強度をもつ
マグネトロンおよび／またはスリット付パーマロイ・タ
ーゲット、ＩＥＥＥ Ｔｒａｎｓａｃｔｉｏｎｓ Ｏｎ
Ｍａｇｎｅｔｉｃｓ。However, certain devices (such as magnetrons and/or slit permalloy targets with higher than normal magnetic field strengths, IEEE Transactions On
Magnetics.
ＭＡＧ−１８巻、第６号、１９８２年１１月、１０８０
−１０８２頁参照）を使用することによって、マグネト
ロンスパッタリングを行なうことができる。これによっ
て、約９μｍ ／ ｈ−１，でのスパッタリング率が可
能である。MAG-Volume 18, No. 6, November 1982, 1080
Magnetron sputtering can be performed by using the following methods: (see page 1082). This allows sputtering rates of approximately 9 μm/h−1.
薄膜磁気ヘッド用のパーマロイ層の場合には、層が磁気
異方性をもつ（°′軽°°方向、′°重°□方向）こと
が特に要求される。これは、層の形成中に、′°軽”１
方向に安定な磁界をつぐることによって達成される。特
に、ヘッドの完全な記録動作／読取り動作に対しては、
保磁力強度Ｈｃ（一般の誘導測定方法により１１軽０方
向に測定）が所定の値、例えば０．２３ Ａ／ｃｍを超
過［７ないことが絶対必要である。In the case of a permalloy layer for a thin-film magnetic head, it is particularly required that the layer has magnetic anisotropy (in the ``light'' direction and the ``heavy'' direction). This is because during the formation of the layer,
This is achieved by passing a stable magnetic field in the direction. Especially for complete recording/reading operations of the head.
It is absolutely necessary that the coercive force strength Hc (measured in the 11 light direction by a general inductive measurement method) does not exceed a predetermined value, for example 0.23 A/cm [7].
従来のスパッタリング方法においては、これは再現する
ことが不可能である。これは特に、スパッタリングの際
に始めから僅かな残留ガス収量をもつスルース装置の場
合に当て嵌まる。同様に、数ミクロンの厚さの層を必要
とする場合、バッチ法による装置にも当て嵌まる。この
原因は、スパッタリングの際の残留ガス収量の磁気特性
への影響である。しかし成る程度の残留ガス成分がを効
であることは明白である。In conventional sputtering methods this is impossible to reproduce. This applies in particular to sluice devices which initially have a low residual gas yield during sputtering. This also applies to batch-based devices if layers of several microns in thickness are required. The reason for this is the influence of the residual gas yield during sputtering on the magnetic properties. However, it is clear that a certain amount of residual gas components are effective.
本発明の目的は、小さなＩ−１ｃを有する磁気的に異方
性のパーマロイ層の被覆を再現可能に実施することが可
能な冒頭に述べた方法を提供することにある。The object of the invention is to provide a method as mentioned at the outset with which the coating of magnetically anisotropic permalloy layers with a small I-1c can be carried out reproducibly.
この目的は、吹付は気体（一般にはアルゴン）に反応気
体（窒素、空気など）を加えることによって達成される
。This purpose is achieved by adding a reactive gas (nitrogen, air, etc.) to the gas (generally argon).
このようにすることによって、常に同量の反応気体をス
パッタリング時に得られることになる。By doing so, the same amount of reaction gas can always be obtained during sputtering.
これによってこの方法は、バッチ原理またはスルース原
理による装置、またはスパッタリング率の異なるスパッ
タリング方法（ＲＦ’ダイオード原理、マグネトロン原
理）の場合に、再現可能に使用することができる。This allows the method to be used reproducibly in apparatuses according to the batch principle or the sluice principle, or in the case of sputtering methods with different sputtering rates (RF' diode principle, magnetron principle).
本発明の発展形態によれば、吹付は気体としては、アル
ゴン・窒素混合体が使用される。その場合、アルゴン吹
付は気体に０．５−２％の窒素を加えることが好ましい
。本発明による方法の使用は、ＲＦ’ダイオード原理お
よびマグネトロン原理の装置に可能である。According to a development of the invention, the blowing gas is an argon/nitrogen mixture. In that case, it is preferable to add 0.5-2% nitrogen to the argon blowing gas. The use of the method according to the invention is possible for devices on the RF' diode principle and on the magnetron principle.
本発明を実施例によって説明する。次の基質。 The present invention will be explained by examples. Next substrate.
酸化アルミニウムベースをもつ炭化チタン（厚さ４ｍｍ
）、ソフトガラス（４ｍ１Ｒ）、ケイ素つェーへｆ０．
ｆｌｌ）が使用された。この例の層の厚さは、２−４μ
ｍである。Titanium carbide with aluminum oxide base (4 mm thickness)
), soft glass (4m1R), silicone glass f0.
fll) was used. The layer thickness in this example is 2-4μ
It is m.
実施例１
スルースを備えたＲＦ・ダイオード原理によるスパッタ
リング装置。前記基質の場合、窒素のない場合には最良
でも０．４−０．６ Ａ／ｃｒｎのＨｃ値であるが、窒
素を加えた場合にはＯ，２Ａ／ｍが得られる（定常被覆
；パーマロイスパッタリング率３μｍ／ｈ）。Example 1 A sputtering device based on the RF/diode principle and equipped with a sluice. For the above substrates, in the absence of nitrogen, Hc values of 0.4-0.6 A/crn are obtained at best, but with nitrogen addition O.2 A/m can be obtained (steady coverage; permalloy sputtering rate 3 μm/h).
実施例２
スルースを備えた半自動連続運転装置。マグネトロン原
理によるスパッタリング。窒素のない場合０．４５ Ａ
／ｃｒｎ、窒素のある場合０．２Ａ／ｃｍ０（定常被覆
；パーマロイスパッタリング率６−８μｍ／ｈ）。Example 2 Semi-automatic continuous operation device equipped with a sluice. Sputtering using the magnetron principle. 0.45 A without nitrogen
/crn, 0.2 A/cm0 with nitrogen (steady coverage; permalloy sputtering rate 6-8 μm/h).
Claims (1)
、空気など）を加えることを特徴とする小さな保磁力強
度（Ｈｃ）をもつ磁気異方性パーマロイ層の生成方法。 ２）吹付は気体としてアルゴン／窒素混合気体を使用す
ることを特徴とする特許請求の範囲第１項記載の方法。 ３）アルゴン吹付は気体に０．５−２％の窒素を加える
ことを特徴とする特許請求の範囲第２項記載の方法。[Claims] ■) A method for producing a magnetically anisotropic permalloy layer with a small coercive force strength (Hc), characterized in that spraying involves adding a reactive gas (nitrogen, air, etc.) to a gas (generally argon). . 2) The method according to claim 1, characterized in that the spraying uses an argon/nitrogen mixed gas as the gas. 3) A method according to claim 2, characterized in that the argon blowing includes adding 0.5-2% nitrogen to the gas.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833342533 DE3342533A1 (en) | 1983-11-24 | 1983-11-24 | SPRAYING OF PERMALLOY LAYERS |
| DE3342533.7 | 1983-11-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60133716A true JPS60133716A (en) | 1985-07-16 |
Family
ID=6215167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59246962A Pending JPS60133716A (en) | 1983-11-24 | 1984-11-21 | Method of forming magnetic anisotropic permalloy layer |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0144851B1 (en) |
| JP (1) | JPS60133716A (en) |
| DE (2) | DE3342533A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324030A (en) * | 1986-06-26 | 1988-02-01 | Res Dev Corp Of Japan | Anisotropic rare earth magnet material and its production |
| GB2194965B (en) * | 1986-09-12 | 1991-01-09 | Sharp Kk | A process for preparing a soft magnetic film of ni-fe based alloy |
| JP2778494B2 (en) * | 1994-12-26 | 1998-07-23 | 日本電気株式会社 | Electrode thin film and magnetoresistive head using the electrode thin film |
| AU6733196A (en) * | 1995-08-30 | 1997-03-19 | Danfoss A/S | Method of producing magnetic poles on a base member, and rotor of an electrical machine |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094761A (en) * | 1977-07-25 | 1978-06-13 | Motorola, Inc. | Magnetion sputtering of ferromagnetic material |
| US4271232A (en) * | 1978-08-28 | 1981-06-02 | International Business Machines Corporation | Amorphous magnetic film |
| JPS5571006A (en) * | 1978-11-22 | 1980-05-28 | Matsushita Electric Ind Co Ltd | Magnetic thin film and its manufacturing method |
| JPS57149706A (en) * | 1981-03-12 | 1982-09-16 | Tdk Corp | Magnetic recording medium |
| JPS5987622A (en) * | 1982-11-09 | 1984-05-21 | Ulvac Corp | Magnetic recording body and its production |
-
1983
- 1983-11-24 DE DE19833342533 patent/DE3342533A1/en not_active Withdrawn
-
1984
- 1984-11-19 EP EP84113992A patent/EP0144851B1/en not_active Expired
- 1984-11-19 DE DE8484113992T patent/DE3476718D1/en not_active Expired
- 1984-11-21 JP JP59246962A patent/JPS60133716A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3476718D1 (en) | 1989-03-16 |
| DE3342533A1 (en) | 1985-06-05 |
| EP0144851A2 (en) | 1985-06-19 |
| EP0144851A3 (en) | 1985-07-17 |
| EP0144851B1 (en) | 1989-02-08 |
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