EP0144851A2 - Sputtering of a permalloy layer - Google Patents

Sputtering of a permalloy layer Download PDF

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Publication number
EP0144851A2
EP0144851A2 EP84113992A EP84113992A EP0144851A2 EP 0144851 A2 EP0144851 A2 EP 0144851A2 EP 84113992 A EP84113992 A EP 84113992A EP 84113992 A EP84113992 A EP 84113992A EP 0144851 A2 EP0144851 A2 EP 0144851A2
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EP
European Patent Office
Prior art keywords
sputtering
nitrogen
gas
argon
permalloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84113992A
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German (de)
French (fr)
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EP0144851A3 (en
EP0144851B1 (en
Inventor
Hans-Werner Dipl.-Ing. Pötzlberger
Siegfried Bock
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Siemens AG
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Siemens AG
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Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0144851A2 publication Critical patent/EP0144851A2/en
Publication of EP0144851A3 publication Critical patent/EP0144851A3/en
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Publication of EP0144851B1 publication Critical patent/EP0144851B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Definitions

  • the invention relates to a method for producing magnetically anisotropic permalloy layers with a small coercive field strength (H c ) by sputtering.
  • Permalloy layers with small H c are required for various applications.
  • thin-film magnetic heads require several micrometer thick permalloy layers (Ni / Fe approx. 80/20), which are preferably applied by sputtering.
  • sputtering rates of up to approx. 3 pm / h are achieved.
  • Argon is used as the sputtering gas.
  • the invention is based on the object of realizing the method mentioned at the beginning which makes the application of magnetically anisotropic permalloy layers with a small H c reproducible.
  • This is achieved by adding reactive gas (nitrogen, air, etc.) to the sputtering gas (generally argon).
  • sputtering gas generally argon
  • This ensures that the same amount of reactive gas is always available when sputtering.
  • this method can be used reproducibly in systems based on the batch or lock principle or in dusting methods with different dusting rates (RF diode principle, magnetron principle).
  • an argon-nitrogen mixed gas is used as the sputtering gas.
  • 0.5-2% nitrogen is preferably added to the argon sputtering gas.
  • the invention is explained using exemplary embodiments.
  • the following substrates were used: titanium carbide with an aluminum oxide base (4 mm thick), soft glass (4 mm), silicon wafer (0.6 mm).
  • the layer thicknesses for these examples are 2-4 ⁇ m.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)

Abstract

1. Process for producing magnetically anisotropic permalloy layers having small coercive field strength (Hc ) <0.25 A/cm by sputtering for thin-film magnetic heads, characterized in that, as a reactive gas, nitrogen or air is added to the sputtering gas argon.

Description

Die Erfindung betrifft ein Verfahren zur Erzeugung von magnetisch anisotropen Permalloy-Schichten mit kleiner Koerzitivfeldstärke (Hc) durch Aufstäuben. Permalloy-Schichten mit kleinem Hc werden für verschiedene Anwendungen benötigt. So sind zum Beispiel für Dünnfilm-Magnetköpfe mehrere Mikrometer dicke Permalloy-Schichten (Ni/Fe ca. 80/20) erforderlich, die vorzugsweise durch Kathodenzerstäubung aufgebracht werden.The invention relates to a method for producing magnetically anisotropic permalloy layers with a small coercive field strength (H c ) by sputtering. Permalloy layers with small H c are required for various applications. For example, thin-film magnetic heads require several micrometer thick permalloy layers (Ni / Fe approx. 80/20), which are preferably applied by sputtering.

Mit dem bisher üblichen Verfahren der Hochfrequenzdiodenzerstäubung (RF = radio frequency) werden Aufstäubraten von bis ca. 3-pm/h erreicht. Dabei wird Argon als Aufstäubgas verwendet.With the previously common method of high-frequency diode sputtering (RF = radio frequency), sputtering rates of up to approx. 3 pm / h are achieved. Argon is used as the sputtering gas.

Aufstäubverfahren mit Magnetfeldunterstützung (MagnetronAufstäubung) sind bisher nicht für Permalloy eingesetzt worden, da das magnetische Target das Ausbilden des Magnetronringes infolge des magnetischen Kurzschlusses im Target unterbindet. Man kann aber durch gewisse Anlagenanpassungen (Magnetron mit höherer Feldstärke als üblich und/oder Permalloy-Target mit Schlitzen, siehe IEEE Transactions On Magnetics, Vol. MAG-18, No. 6, November 1982, S. 1080-1082) trotzdem eine Magnetronaufstäubung erzielen. Damit werden Aufstäubraten bis ca. 9 pm/h möglich.Sputtering methods with magnetic field support (magnetron sputtering) have not previously been used for permalloy, since the magnetic target prevents the formation of the magnetron ring as a result of the magnetic short circuit in the target. However, certain system adjustments (magnetron with a higher field strength than usual and / or permalloy target with slots, see IEEE Transactions On Magnetics, Vol. MAG-18, No. 6, November 1982, pp. 1080-1082) can nevertheless be used to sputter magnetron achieve. This makes dusting rates up to approx. 9 pm / h possible.

Bei Permalloy-Schichten für Dünnfilm-Magnetköpfe wird unter anderem gefordert, daß die Schichten magnetische Anisotropie aufweisen ("leichte", "schwere" Richtung). Dies wird dadurch erzielt, daß während der Schichterzeugung ein stationäres Magnetfeld in "leichter" Richtung Wed 1 Plr/31.10..1983 angelegt ist. Für die einwandfreie Schreib-/Lese-Funktion des Kopfes ist es außerdem unbedingt erforderlich, daß die Koerzitivfeldstärke H (gemessen in "leichter" Richtung, nach dem üblichen induktiven Meßverfahren) einen bestimmten Wert, zum Beispiel 0,25 A/cm nicht überschreitet.In the case of permalloy layers for thin-film magnetic heads, it is required, among other things, that the layers have magnetic anisotropy ("light", "heavy" direction). This is achieved in that a stationary magnetic field in the "easy" direction Wed 1 Plr / October 31, 1983 during the layer production is created. For the perfect read / write function of the head, it is also absolutely essential that the coercive field strength H (measured in the "easy" direction, according to the usual inductive measuring method) does not exceed a certain value, for example 0.25 A / cm.

Bei bekannten Aufstäubverfahren ist.das nicht reproduzierbar möglich. Dies gilt besonders bei Schleusenanlagen, die von vornherein einen geringen Restgasanfall beim Aufstäuben haben. Ähnliches gilt auch bei Anlagen nach dem Batch-Verfahren, wenn Schichten von mehreren Mikron Dicke benötigt werden. Ursache ist der Einfluß des Restgasanfalls beim Aufstäuben auf die magnetischen Eigenschaften. Offensichtlich ist ein gewisser Restgasanteil günstig.With known dusting methods, this is not reproducibly possible. This applies particularly to lock systems that have a low residual gas build-up when dusting from the outset. The same applies to systems using the batch process, if layers of several microns thick are required. The cause is the influence of the residual gas accumulation during dusting on the magnetic properties. Obviously, a certain amount of residual gas is cheap.

Der Erfindung liegt die Aufgabe zugrunde, das eingangs genannte Verfahren zu realisieren, das die Aufbringung magnetisch anisotroper Permalloy-Schichten mit kleinem Hc reproduzierbar durchführbar macht. Dies wird dadurch erzielt, daß dem Aufstäubgas (i. a. Argon) reaktives Gas (Stickstoff, Luft usw.) zugesetzt wird. Dadurch wird erreicht, daß eine stets gleiche Menge eines reaktiven Gases beim Aufstäuben zur Verfügung steht. Dadurch kann dieses Verfahren bei Anlagen nach dem Batch- oder Schleusenprinzip bzw. bei Aufstäubverfahren mit unterschiedlicher Aufstäubrate (RF-Diodenprinzip, Magnetronprinzip) reproduzierbar eingesetzt werden.The invention is based on the object of realizing the method mentioned at the beginning which makes the application of magnetically anisotropic permalloy layers with a small H c reproducible. This is achieved by adding reactive gas (nitrogen, air, etc.) to the sputtering gas (generally argon). This ensures that the same amount of reactive gas is always available when sputtering. As a result, this method can be used reproducibly in systems based on the batch or lock principle or in dusting methods with different dusting rates (RF diode principle, magnetron principle).

Nach einer Weiterbildung der Erfindung wird als Aufstäubgas ein Argon-Stickstoffmischgas verwendet. Dabei wird vorzugsweise dem Argon-Aufstäubgas 0,5 - 2 % Stickstoff zugesetzt. Die Verwendung des Verfahrens nach der Erfindung ist sowohl in Anlagen mit RF-Diodenprinzip oder solchen mit Magnetronprinzip möglich.According to a development of the invention, an argon-nitrogen mixed gas is used as the sputtering gas. 0.5-2% nitrogen is preferably added to the argon sputtering gas. The use of the method according to the invention is possible both in systems with the RF diode principle or those with the magnetron principle.

Die Erfindung wird anhand von Ausführungsbeispielen erläutert. Es wurden folgende Substrate verwendet: Titancarbid mit Aluminiumoxidunterlage (4 mm dick), Softglas (4 mm), Silizium-Wafer (0,6 mm). Die Schichtdicken für diese Beispiele sind 2 - 4 µm.The invention is explained using exemplary embodiments. The following substrates were used: titanium carbide with an aluminum oxide base (4 mm thick), soft glass (4 mm), silicon wafer (0.6 mm). The layer thicknesses for these examples are 2-4 µm.

Ausführungsbeispiel 1:Example 1:

Aufstäubanlage nach dem RF-Diodenprinzip mit Schleuse. hne Stickstoff ergeben sich bei den genannten Substraten Hc-Werte bestenfalls von 0,4 - 0,6 A/cm während mit Stickstoffzugabe 0,2 A/cm erzielt werden. (Standbeschichtung; Permalloy-Aufstäubrate 3 µm pro Stunde)Dusting system based on the RF diode principle with lock. No nitrogen results in the substrates H c values at best of 0.4-0.6 A / cm, while 0.2 A / cm can be achieved with the addition of nitrogen. (Stand coating; permalloy dusting rate 3 µm per hour)

Ausführungsbeispiel 2:Example 2:

Halbautomatische Durchlaufanlage mit Schleuse; Aufstäuben nach dem Magnetronprinzip. Ohne Stickstoff 0,45 A/cm und mit Stickstoff 0,2 A/cm. (Standbeschichtung Permalloy-Aufstäubrate 6 - 8 um pro Stunde)Semi-automatic flow system with lock; Dusting according to the magnetron principle. Without nitrogen 0.45 A / cm and with nitrogen 0.2 A / cm. (Stand coating permalloy sputtering rate 6 - 8 µm per hour)

Claims (4)

1. Verfahren zur Erzeugung von magnetisch anisotropen Permalloy-Schichten mit kleiner Koerzitivfeldstärke (H ) durch Aufstäuben, dadurch gekennzeichnet , daß dem Aufstäubgas (i. a. Argon) ein reaktives Gas (Stickstoff, Luft usw.) zugesetzt wird.1. A method for producing magnetically anisotropic permalloy layers with a small coercive field strength (H) by sputtering, characterized in that a reactive gas (nitrogen, air, etc.) is added to the sputtering gas (generally argon). 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet , daß als Aufstäubgas ein Argon/Stickstoffmischgas verwendet wird.2. The method according to claim 1, characterized in that an argon / nitrogen mixed gas is used as the sputtering gas. 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet , daß dem Argon-Aufstäubgas 0,5 - 2 % Stickstoff zugesetzt werden.3. The method according to claim 2, characterized in that the argon sputtering gas 0.5 - 2% nitrogen are added. 4. Verwendung dieses Verfahrens sowohl in Anlagen mit RF-Diodenprinzip oder solchen mit Magnetronprinzip.4. Use of this method both in systems with the RF diode principle or those with the magnetron principle.
EP84113992A 1983-11-24 1984-11-19 Sputtering of a permalloy layer Expired EP0144851B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833342533 DE3342533A1 (en) 1983-11-24 1983-11-24 SPRAYING OF PERMALLOY LAYERS
DE3342533 1983-11-24

Publications (3)

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EP0144851A2 true EP0144851A2 (en) 1985-06-19
EP0144851A3 EP0144851A3 (en) 1985-07-17
EP0144851B1 EP0144851B1 (en) 1989-02-08

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EP84113992A Expired EP0144851B1 (en) 1983-11-24 1984-11-19 Sputtering of a permalloy layer

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EP (1) EP0144851B1 (en)
JP (1) JPS60133716A (en)
DE (2) DE3342533A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0251233A1 (en) * 1986-06-26 1988-01-07 Research Development Corporation of Japan Anisotropic rare earth magnet material and production process thereof
EP0720154A2 (en) * 1994-12-26 1996-07-03 NEC Corporation An electrode thin film for such as magnetoresistive effect head and a method of manufacturing the same
DE19531861A1 (en) * 1995-08-30 1997-03-06 Danfoss As Method for producing magnetic poles on a base body and rotor of an electrical machine

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194965B (en) * 1986-09-12 1991-01-09 Sharp Kk A process for preparing a soft magnetic film of ni-fe based alloy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008328A1 (en) * 1978-08-28 1980-03-05 International Business Machines Corporation Amorphous magnetic films and a method of making such films

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094761A (en) * 1977-07-25 1978-06-13 Motorola, Inc. Magnetion sputtering of ferromagnetic material
JPS5571006A (en) * 1978-11-22 1980-05-28 Matsushita Electric Ind Co Ltd Magnetic thin film and its manufacturing method
JPS57149706A (en) * 1981-03-12 1982-09-16 Tdk Corp Magnetic recording medium
JPS5987622A (en) * 1982-11-09 1984-05-21 Ulvac Corp Magnetic recording body and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008328A1 (en) * 1978-08-28 1980-03-05 International Business Machines Corporation Amorphous magnetic films and a method of making such films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS, Band 52, Nr. 5, Mai 1981, Seiten 3562-3564, American Institute of Physics, NEW YORK, (US). N. HEIMAN et al.: "Magnetic and recording properties of non-crystalline FeN films" *
REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES, Band 25, Nr. 3-4, Marz-April, 1977, Seiten 209-216, T. SERIKAWA: "Permalloy film preparation by RF sputtering" *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0251233A1 (en) * 1986-06-26 1988-01-07 Research Development Corporation of Japan Anisotropic rare earth magnet material and production process thereof
US4933059A (en) * 1986-06-26 1990-06-12 Research Development Corporation Of Japan Process for preparing anisotropic rare earth magnet material
EP0720154A2 (en) * 1994-12-26 1996-07-03 NEC Corporation An electrode thin film for such as magnetoresistive effect head and a method of manufacturing the same
EP0720154A3 (en) * 1994-12-26 1996-09-18 Nec Corp An electrode thin film for such as magnetoresistive effect head and a method of manufacturing the same
DE19531861A1 (en) * 1995-08-30 1997-03-06 Danfoss As Method for producing magnetic poles on a base body and rotor of an electrical machine

Also Published As

Publication number Publication date
DE3476718D1 (en) 1989-03-16
JPS60133716A (en) 1985-07-16
DE3342533A1 (en) 1985-06-05
EP0144851A3 (en) 1985-07-17
EP0144851B1 (en) 1989-02-08

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