JPS60131998A - Pretreating solution for plating - Google Patents
Pretreating solution for platingInfo
- Publication number
- JPS60131998A JPS60131998A JP23950783A JP23950783A JPS60131998A JP S60131998 A JPS60131998 A JP S60131998A JP 23950783 A JP23950783 A JP 23950783A JP 23950783 A JP23950783 A JP 23950783A JP S60131998 A JPS60131998 A JP S60131998A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wiring
- soln
- sulfuric acid
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Abstract
Description
【発明の詳細な説明】
本発明はAl2O3含有量70チ以上のセラミックにW
またはW−Mo系或いはMo等の全組化配線をもつ部品
を混合液中に浸漬して処理するメッキの前処理液に係り
、更に詳しくは金属化配線面へのメッキ被膜層の密着性
向上を計ったメッキの前処理液に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for applying W to ceramics having an Al2O3 content of 70 cm or more.
Or, it relates to a plating pre-treatment solution in which components with fully assembled wiring such as W-Mo or Mo are immersed in a mixed solution, and more specifically, to improve the adhesion of a plating film layer to a metallized wiring surface. This relates to a plating pretreatment solution that measures
従来、メタライズ配線を形成したセラミックは、メッキ
する前工程で純水と混合したNaOHまたは純水と硫酸
或いは純水とフッ酸等のように、純水に対して単一アル
カリや単一酸を混合した液に浸漬して処理を行っていた
。Conventionally, ceramics with metallized wiring were prepared by adding a single alkali or single acid to pure water, such as NaOH mixed with pure water, pure water and sulfuric acid, or pure water and hydrofluoric acid, etc., in the pre-plating process. The treatment was carried out by immersing it in the mixed liquid.
これらの液での処理品をNiまたはAuメッキ等を施し
て、700〜850℃中にてシンタリングを行うとメッ
キ表面にフクレがしばしば多発した。これはWまたはW
−Mo系或いはMo等のメタライズ面とメッキとの密着
性が悪いために内部ガスが加熱により膨張したものと判
断された。When products treated with these solutions were plated with Ni or Au and sintered at 700 to 850°C, blisters often appeared on the plated surfaces. This is W or W
It was determined that the internal gas expanded due to heating due to poor adhesion between the metallized surface of -Mo or Mo, etc. and the plating.
本発明者は、セラミックやメタライズの各添加物等の調
査およびメッキ前の処理液について種々テストの結果、
この原因が明らかにされて本発明を完成したものである
。As a result of investigations into various additives for ceramics and metallization, and various tests on treatment liquids before plating, the inventor found that
The present invention was completed by clarifying the cause of this problem.
本発明はAl2O3含有量70%以子のグリーンシート
にWまたはW−Mo系或いはMoの金属ペーストにて配
線を印刷して焼結したもの或いはAl2O3含有量70
%以上の焼結基板に上記金属ペーストにて配線を印刷し
焼き付けたものを、純水に対して容量比で硫酸20〜5
0%とフッ酸1〜5チ?混合液中にて処理することを特
徴とするメッキの前処理液を提供するものである。The present invention is a green sheet with an Al2O3 content of 70% or more, printed wiring with W or W-Mo metal paste, and sintered, or a green sheet with an Al2O3 content of 70% or more.
% or more of wiring printed and baked using the above metal paste on a sintered board, and sulfuric acid at a volume ratio of 20 to 5% to pure water.
0% and 1-5 t of hydrofluoric acid? The present invention provides a plating pretreatment solution that is characterized in that it is processed in a mixed solution.
以下、本発明につき説明する。The present invention will be explained below.
前述でのメタライズ面とメッキとの密着性の悪さからく
る加熱後のフクレの原因がメッキの前処理液から起因し
ていることが下記の調査結果より明らかになった。The following investigation results revealed that the cause of blistering after heating due to poor adhesion between the metallized surface and the plating was caused by the plating pre-treatment liquid.
Al2O3含有量70チ以上のグリーンシートにW粉末
を調製したペーストにて配線を印刷して焼結した基板を
脱脂して、下記したメッキの前処理液中に浸漬後、水洗
し、しかる後に脱水後N1メッキを施し、750℃の還
元雰囲気中でシンタリングした。その試料を拡大鏡にて
調べてフクレの発生個数と、またセラミックの破断面を
S。Print wiring on a green sheet with an Al2O3 content of 70 cm or more using a paste prepared with W powder, sinter the board, degrease it, immerse it in the plating pretreatment solution described below, wash it with water, and then dehydrate it. After that, N1 plating was applied and sintering was performed in a reducing atmosphere at 750°C. Examine the sample with a magnifying glass to determine the number of blisters and the fractured surface of the ceramic.
E、Mの電子顕微鏡で観察して下記した。The results were observed using an E and M electron microscope.
試料は各々30個ずつ調査した。Thirty samples of each were investigated.
上表から明らかなように試料悉1〜A4の純水に対して
の単一アルカリや単−酸の混合液はフクレの発生または
セラミックへの侵蝕が有り使用小米ない。As is clear from the above table, the mixed solution of single alkali or mono-acid in pure water of Samples 1 to A4 causes blisters or corrodes the ceramic, and cannot be used.
それに対して試料A5〜A9の純水に対しての容量比で
硫酸20〜50チとフッ酸1〜5%との複合酸の混合液
は、フクレの発生が皆無でありかつセラミックへの侵蝕
が殆んど見られず良好な結果を得ることが出来た。On the other hand, samples A5 to A9, a mixed solution of a complex acid of 20 to 50% sulfuric acid and 1 to 5% hydrofluoric acid in terms of volume ratio to pure water, did not cause any blistering and did not corrode ceramics. We were able to obtain good results with almost no visible signs.
また試料属10〜AI2の純水に対しての容量比で硫酸
60%以上および15係以下とフッ酸6チ以上および0
5%以下との複合酸の混合液は、フクレの発生が見うけ
られ、またセラミックへの侵蝕も僅かに発生した。In addition, the volume ratio of sample groups 10 to AI2 to pure water is sulfuric acid of 60% or more and 15% or less, hydrofluoric acid of 6% or more and 0%.
Mixtures of complex acids containing 5% or less caused blistering and slight corrosion of ceramics.
以上の調査より明らかな如く、本発明の純水に対しての
容量比で硫酸20〜50チとフッ酸1〜5%の混合液と
限定したのは、かかる理由によるものである。またAl
2O3含有量70チ以上としたのは、以下ではセラミッ
ク中のマトリックスであるガラス成分が増加して侵蝕さ
れやすくなるためである。As is clear from the above investigation, this is the reason for limiting the volume ratio of sulfuric acid to 1 to 5% of sulfuric acid and 1 to 5% of hydrofluoric acid to pure water in the present invention. Also, Al
The reason why the 2O3 content is set to 70 or more is because the glass component, which is the matrix in the ceramic, increases and becomes susceptible to corrosion.
この調査結果より硫酸とフッ酸とを混合して使用するこ
とにより、フッ酸自体のセラミック中のガラス成分への
侵蝕作用が、硫酸を添加することによって抑制されその
結果が発揮されていると判断される。また硫酸とフッ酸
がWやW−No或いはMoのメタライズ酸化物の除去に
非常に効果があったと考えられる。Based on the results of this investigation, it was determined that by using a mixture of sulfuric acid and hydrofluoric acid, the corrosive effect of hydrofluoric acid itself on the glass components in the ceramic was suppressed by adding sulfuric acid, and the result was achieved. be done. It is also believed that sulfuric acid and hydrofluoric acid were very effective in removing metalized oxides of W, W--No, or Mo.
本発明の採用によりメタライズ面へのNiやAuメッキ
被膜層の密着性を向上して不良発生を皆無とし、併せて
耐熱特性に優れ耐久性ある品質安定を得ることが出来た
。By employing the present invention, it was possible to improve the adhesion of the Ni or Au plating layer to the metallized surface, eliminate the occurrence of defects, and also achieve excellent heat resistance, durable quality, and stability.
以下、実施例につき具体的に述べる。Examples will be described in detail below.
実施例
Al2O392%の含有グリーンシート上にW粉末を調
製したペーストにて配線を印刷して、樹脂抜き後水素と
窒素との混合雰囲気中で1550℃にて焼結した配腺基
板を製作した。これらの基板を脱脂して水洗後、前記第
1表に示した試料屋5〜A9の純水に対して容量比で硫
酸50%とフッ酸5チ、硫酸50チとフッ酸1%、硫酸
20チとフッ酸1%、硫酸30%とフッ酸2%、硫酸4
0%とフッ酸3%とを各々混合して処理液を作り、その
各々の液中に各2000個を室温中で2m1n浸漬して
後、水洗した。Example A wiring board was manufactured by printing wiring on a green sheet containing 92% Al2O3 using a paste prepared with W powder, and sintering it at 1550° C. in a mixed atmosphere of hydrogen and nitrogen after removing the resin. After degreasing these substrates and washing them with water, add 50% sulfuric acid and 5 liters of hydrofluoric acid, 50 liters of sulfuric acid and 1% hydrofluoric acid, and sulfuric acid to the pure water in sample stores 5 to A9 shown in Table 1 above. 20 chloride and 1% hydrofluoric acid, 30% sulfuric acid and 2% hydrofluoric acid, 4 sulfuric acid
A treatment solution was prepared by mixing 0% hydrofluoric acid and 3% hydrofluoric acid, and 2,000 pieces of each were immersed in each solution for 2 ml at room temperature, and then washed with water.
この各々2000個の試料を電解Niメッキ、無jfl
Z f’J”F Niメッキと電WfAuメッキ、無電
解Auメッキにて各500個をメッキした。この時のメ
ッキ厚さけち解Niメッキは4μm1無電解Niメツキ
は4 pm 、 電JQ’i: Auメッキは2ttm
、無電角%AuAuメッキμmを被膜した。Each of these 2000 samples was electrolytically plated with Ni, without jfl.
500 pieces each were plated using Ni plating, electrolytic WfAu plating, and electroless Au plating.At this time, the plating thickness was 4 μm for electroless Ni plating, 4 pm for electroless Ni plating, and 4 pm for electroless Ni plating. : Au plating is 2ttm
, electroless %AuAu plating μm was coated.
これらの試料でNiメッキしたものは850℃、Auメ
ッキも850℃の水素と窒素との混合雰囲気中にてシン
ターした。The Ni-plated samples were sintered at 850°C, and the Au-plated samples were sintered at 850°C in a mixed atmosphere of hydrogen and nitrogen.
以上での20種類の各500個をフクレ調査したところ
不良は皆無であり、IC素子を組付けたアッセンブリ品
の実機使用テストの耐久性も良好である通知を得た。When 500 pieces of each of the above 20 types were inspected for blistering, there were no defects, and it was reported that the durability of the assembled product assembled with the IC element was good in an actual machine test.
本発明はAl2O3含有量70%以上のセラミックに上
記メタライズ面をもち、メッキを被膜する製品には総て
適用出来るものである。The present invention can be applied to all products that have the above-mentioned metallized surface on a ceramic having an Al2O3 content of 70% or more and are coated with plating.
Claims (1)
はW−Mo系或いはMoの金属ペーストにて配線を印刷
して焼結したもの或いはAl2O3含有量70%以上の
焼結基板に上記金属ペーストにて配線を印刷し焼き付け
たものを、純水に対して容量比で硫酸20〜50%とフ
ッ酸1〜5チの混合液中にて処理することを特徴とする
メッキの前処理液。Wiring is printed and sintered using W or W-Mo based or Mo metal paste on a green sheet with an Al2O3 content of 70% or more, or wiring is printed with the above metal paste on a sintered substrate with an Al2O3 content of 70% or more. A pretreatment solution for plating, characterized in that the printed and baked product is treated in a mixed solution of 20 to 50% sulfuric acid and 1 to 5% hydrofluoric acid in terms of volume ratio to pure water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23950783A JPS60131998A (en) | 1983-12-19 | 1983-12-19 | Pretreating solution for plating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23950783A JPS60131998A (en) | 1983-12-19 | 1983-12-19 | Pretreating solution for plating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60131998A true JPS60131998A (en) | 1985-07-13 |
Family
ID=17045813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23950783A Pending JPS60131998A (en) | 1983-12-19 | 1983-12-19 | Pretreating solution for plating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60131998A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2803756A1 (en) * | 2013-05-13 | 2014-11-19 | Atotech Deutschland GmbH | Method for depositing thick copper layers onto sintered materials |
US10622580B2 (en) | 2004-09-17 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
-
1983
- 1983-12-19 JP JP23950783A patent/JPS60131998A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10622580B2 (en) | 2004-09-17 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US10971697B2 (en) | 2004-09-17 | 2021-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US11417856B2 (en) | 2004-09-17 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US11711936B2 (en) | 2004-09-17 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
EP2803756A1 (en) * | 2013-05-13 | 2014-11-19 | Atotech Deutschland GmbH | Method for depositing thick copper layers onto sintered materials |
WO2014184102A3 (en) * | 2013-05-13 | 2015-01-08 | Atotech Deutschland Gmbh | Method for depositing thick copper layers onto sintered materials |
CN105189827A (en) * | 2013-05-13 | 2015-12-23 | 埃托特克德国有限公司 | Method for depositing thick copper layers onto sintered materials |
JP2016518530A (en) * | 2013-05-13 | 2016-06-23 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | Method for depositing a thick copper layer on a sintered material |
CN105189827B (en) * | 2013-05-13 | 2017-09-12 | 埃托特克德国有限公司 | Deposit the method on thick copper layer to agglomerated material |
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