JPS60131704A - Pyroelectric heat detecting element - Google Patents
Pyroelectric heat detecting elementInfo
- Publication number
- JPS60131704A JPS60131704A JP58240192A JP24019283A JPS60131704A JP S60131704 A JPS60131704 A JP S60131704A JP 58240192 A JP58240192 A JP 58240192A JP 24019283 A JP24019283 A JP 24019283A JP S60131704 A JPS60131704 A JP S60131704A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- oriented
- platinum
- orientation
- detecting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は１強誘電体薄膜を利用した焦電形熱検出素子に
関するもので、赤外検出器などに使われるＯ
従来例の構成とその問題点
物体は常温近傍において１０μｍの波長付近にピークを
もつ赤外線を輻射しており、この輻射エネルギーの波長
特性が物体の温度によって異なるので、物体から輻射さ
れる赤外線のエネルギー番測定することによってその温
度を非接触で測定できる〇
これらに使用される赤外線検出器としては、大別して量
子形と熱形がある。量子形は応答速度が速く感度も高い
という特長をもっているが液体窒素などによる冷却が必
要であり、感度の波長依存性が大きいという欠点を有す
る。それに比べて熱形検出器は、感度は低いが、常温で
動作し感度の波長依存性がないという長所をもっている
。熱形には、サーミスタ形と焦電形があるが、焦電形は
比較的感度もよく、バイアス電圧を必要とせず、取扱い
が簡便である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a pyroelectric thermal detection element using a ferroelectric thin film, and is used in infrared detectors and the like. Objects emit infrared rays that have a peak around a wavelength of 10 μm at room temperature, and the wavelength characteristics of this radiant energy vary depending on the temperature of the object, so the temperature can be determined by measuring the energy number of the infrared rays radiated from the object. Non-contact measurement possible Infrared detectors used for these can be roughly divided into quantum type and thermal type. The quantum type has the advantage of fast response speed and high sensitivity, but has the disadvantage that it requires cooling with liquid nitrogen or the like, and its sensitivity is highly dependent on wavelength. In comparison, thermal detectors have lower sensitivity, but have the advantage of operating at room temperature and having no wavelength dependence on sensitivity. There are two types of thermal type: thermistor type and pyroelectric type. Pyroelectric type has relatively good sensitivity, does not require bias voltage, and is easy to handle.
このようなことから、赤外線検出器として特性のよい焦
電形の検出器が望まれている。、発明の目的 ゛
本発明は特性のよい、すなわち性能指数の大きな焦電形
熱検出素子を提供することを目的とする０発明゛の構成
、、 ・
本発明は、化学式（ＰｂＸＬａｙ）（Ｔｉ２Ｚｒｗ）Ｏ
３で１組成範囲（Ａ）Ｑ、７０ ｌ ｘ （１、０，９
０ｆ ｘ ＋ ｙ、ｆｆ１．０．９５イｘ、？１ 、ｗ
＝ｏ 、（Ｂ）ｘ＝１ １ ｙ：ｏ 、ａ、４ｔｓｌｚ
１１．ｚ＋ Ｗ＝１ｍ（０）ｏ、５３１ｘ（１、ｘ＋ｙ
＝１．０．５０．＜ｚ、？１．ＯＯ，０，９６イｚ ＋
ｗ４１ 、のうちいずれかの組成をもつ〈ｏＯｌ〉配向
した強誘電体薄膜の配向軸の分向に発生する焦電気を利
用すネことを特徴とする焦 ゛電形熱薇″出素子であ、
る０ 、■ ５−５焦電形熱検出素子に要求され克こと
は、焦軍堡数が大さいこと、電荷発生電が同じであると
きには、電圧が静電容量に反比例するので、誘電率が小
さいことである。したがって焦電形熱検出素子の性能指
数は、焦電係数と誘電率との比で示すことができる。本
発明の素子はこの性能指数が大きいものである０
実施例の説明
本発明における強誘電体薄膜は高周波スパッタ製
リング法で作餞した。基板Ｍ、Ｏ上にく１００〉方向に
酉ｑ向した白金と、比較のた″めにＭｇＯ上の無配向の
白金を下地電極とし、ヒータ付陽極に固定した後、その
上に一強誘電体範膜を形成した。For this reason, a pyroelectric detector with good characteristics is desired as an infrared detector. ,Object of the invention ``The present invention aims to provide a pyroelectric thermal detection element with good characteristics, that is, a large figure of merit.'' ・The present invention has the following characteristics: O
3 in 1 composition range (A) Q, 70 l x (1, 0, 9
0f x + y, ff1.0.95i x,? 1,w
=o, (B)x=1 1 y:o,a,4tslz
11. z+ W=1m(0)o, 531x(1, x+y
=1.0.50. <z,? 1. OO,0,96iz+
W41 is a pyroelectric thermal energy emitting element characterized by utilizing pyroelectricity generated in the direction of the orientation axis of an <oOl> oriented ferroelectric thin film having any of the following compositions: ,
0, ■ 5-5 What is required of a pyroelectric heat detection element is a large pyroelectric field number, and when the generated charge is the same, the voltage is inversely proportional to the capacitance, so the permittivity is low. is small. Therefore, the figure of merit of a pyroelectric heat detection element can be expressed as the ratio between the pyroelectric coefficient and the dielectric constant. The device of the present invention has a large figure of merit.0 Description of Examples The ferroelectric thin film of the present invention was prepared by a high frequency sputtering method. Platinum oriented in the 100> direction on the substrates M and O, and unoriented platinum on MgO for comparison, were used as base electrodes and fixed to an anode with a heater, and then a ferroelectric A corporal membrane was formed.
ターゲットにはＣＰ ｂｚＬａｙ ） （Ｔ ｚ ｚ
Ｚ ｒＶＶ ） Ｏ５の！、７．Ｚ、Ｗを変えて所定の
化学式になるように、 ＰｂＯ，Ｌａ２Ｏ３；ＴｌＯ２
，”ＺｒＯ２を秤量し、十分に・混合した粉末を用いた
。雰囲気ガスはアルゴン９０％と酸素１０％の混合気体
で、その全圧は約５Ｐａである。下地温度は５７５℃と
し、マグネトロン高周波スパッタリング法により、厚み
が５約゛２μｍ（７）強誘電体薄膜を作製した。The target has CP bzLay ) (T z z
Z rVV ) O5's! ,7. Change Z and W to obtain the prescribed chemical formula, PbO, La2O3; TlO2
, "ZrO2 was weighed and thoroughly mixed. The atmospheric gas was a mixture of 90% argon and 10% oxygen, and its total pressure was about 5 Pa. The base temperature was 575°C, and the magnetron high frequency A ferroelectric thin film with a thickness of about 5 mm (7) was prepared by sputtering.
、作製し岬の配一度に？“て１線回析法でしらべた後−
上面に電極として白金をつけ、２００℃で１００ ｋｖ
／Ｃｍの電界を印加して、１０分間分極した。焦電係数
は一２０℃から１００℃の範囲で温度変化させたときの
焦電電流と温度変化速度よりめた。, fabricated and disposed of the cape at once? “After examining it using one-line diffraction method-
Platinum was attached as an electrode on the top surface, and the voltage was 100 kV at 200℃.
An electric field of /Cm was applied for polarization for 10 minutes. The pyroelectric coefficient was determined from the pyroelectric current and temperature change rate when changing the temperature in the range of -20°C to 100°C.
Ｘ＠回折図形から、〈１Ｏｏ〉配向した白金上の薄膜で
は、大部分が正方晶形で％（１００）面と（ｏｏｌ）面
の反射のみがみられた◇無配向の白金上の薄膜では、多
結晶の磁器と同様ＺＸ線回折図形が得られた０く００１
〉配向した薄膜の配向度ムは、（１００）面と（００１
）面の反射強度をそれぞれＩ＋ｏｏ ｔ エ。。、とし
たとき、で定義する。From the X@ diffraction pattern, the thin film on <1Oo> oriented platinum was mostly tetragonal, with only reflections of the (100) and (ool) planes.◇For the thin film on non-oriented platinum, 0ku001, a ZX-ray diffraction pattern similar to that of polycrystalline porcelain was obtained.
〉The degree of orientation of the oriented thin film is the (100) plane and the (001
) The reflection intensity of each surface is I + oo t d. . When , it is defined as .
第１表〜第３表に、化学式（Ｐ ｂｘ Ｌ ａ ｙ ）
（Ｔ ｉ ｚＺ ｒ −） Ｏｙ、でＸ ＊ ７ ＋
２ ＃ Ｗｆｔ変化させたときの（００１）配同率ム
と誘電率ε、焦電係数γ−焦電形熱検出器としての拐料
の性能指数γ／ε、を示し、（００１）配向と無配向の
場合の性能指数の比較をする。無配向試料では配向率の
値を記入していない。In Tables 1 to 3, the chemical formula (P bx L a y )
(T i zZ r −) Oy, and X * 7 +
2 # When Wft is changed, (001) orientation and dielectric constant ε, pyroelectric coefficient γ - figure of merit γ/ε of the particle as a pyroelectric heat detector are shown, and (001) orientation and free Compare the figures of merit in the case of orientation. For non-oriented samples, the orientation rate value is not entered.
第１表には、Ｗ＝Ｏの場合の結果を示す。表に示した組
成範囲では、無配向の膜に比べて、く１００）配向した
白金上の膜・では、配向率が高く。Table 1 shows the results when W=O. In the composition range shown in the table, the orientation rate of the film on oriented platinum is higher than that of the non-oriented film.
８６〜７６チに達する。これらの配向膜では、無配向膜
に比べてｑｒ が減少し、γが増加する結果。It reaches 86-76chi. In these oriented films, qr decreases and γ increases compared to non-oriented films.
性能指数が著るしく大きくなっている。この表に示して
いないが、ｘ （０，７、ｙ ） ０．２では（１００
）配向した白金上で成長させた膜では、特性の面で無配
向に比べて、すぐれた値が得られなかった。The figure of merit has increased significantly. Although not shown in this table, for x (0,7, y) 0.2, (100
) Films grown on oriented platinum did not have superior properties compared to non-oriented films.
（以下余白）
第２表には、ｙ＝ｏの場合の結果を示す。表に示した組
成範囲では、無配向の膜に比べて、く１００〉配向した
白金上の膜では、配向率が高く。(Left below) Table 2 shows the results when y=o. In the composition range shown in the table, the orientation rate of the film on platinum with <100> orientation is higher than that of the non-oriented film.
９６〜７５％に達する。これらの配向膜では、無配向膜
に？パてε、が減少し、γが増加する結果。It reaches 96-75%. Are these oriented films non-oriented? The result is that ε decreases and γ increases.
性能指数が著るしく大きくなっている。この表に示して
いないが、Ｚ（０，４５では、く１０ｏ〉配向した白金
上で成長させた膜でも、特性の面で無配向に比べて、す
ぐれた値が得られなかった。The figure of merit has increased significantly. Although not shown in this table, even films grown on Z(0,45, 10o> oriented platinum) did not have superior properties compared to non-oriented platinum.
（以下余白） 第３表には、ｚ＋ｙ＝１，７笑０の場合の結果を示す。(Margin below) Table 3 shows the results when z+y=1,70.
表に示した組成範囲では、無配向の膜に蒜−ｃ’： ’
＜ 、“。。＞′、Ｉ峨す、ｃ＋ａ＊□エヨう□え膜で
は、配向率が高く、９５〜７０％に達する。In the composition range shown in the table, garlic-c': '
<, "..>', I increase, c+a*□Eyo□ film, the orientation rate is high, reaching 95 to 70%.
これら。配向ゆ−Ｃゆ」無配。よ、よ６．６、ヵ３減少
し、γが増加する結果、性能指数が著るしく大きくなっ
ている。こ？轡に示していないが、７＜０．８３ 、
ｚ （０，５０では、（１００）配−向した白金上で成
長させた膜でも特性の面で無配向に比べて、すぐれた結
果が得られなかった。these. Orientation Yu-Cyu” No distribution. As a result of the decrease of 6.6 and 3 and the increase of γ, the figure of merit becomes significantly large. child? Although not shown in the table, 7<0.83,
At z (0,50), even films grown on (100)-oriented platinum did not have superior properties compared to non-oriented films.
（以下余白）
第１表〜第３表かられかるように、化学式（ＰｂｘＬａ
、） （Ｔｉ、Ｚ〜）０５で組成範囲（ム） Ｏ，７ｌ
ｘ （１、Ｏ，，９ｆｘ ＋ ｙｆｌ 、 ０．９５ｆ
ｚ ｆｌ 。(Left below) As shown in Tables 1 to 3, the chemical formula (PbxLa
, ) (Ti, Z ~) Composition range (mu) at 05 O, 7l
x (1, O,,9fx + yfl, 0.95f
zfl.
ｗ＝−０ｅ （Ｂ）ｘ＝＝１ ＊ ｙ＝ｏ ＊ ０．４
５＆ｚ−＜１１！＋Ｗ＝１．（Ｇ）Ｏ，８３ｆｘ（１、
ｚ＋ｙ＝１゜０．５１ （＜１ 、０．９６Ｚｚ ＋’
ＷＺ １のうちのいずれかの組成をもつ（１００）配向
した強誘電体薄膜の〈１００〉方向の焦電効果を利用し
た素子がすぐれた性能指数をもつことがわかる。w=-0e (B)x==1*y=o*0.4
5&z-<11! +W=1. (G)O,83fx(1,
z+y=1゜0.51 (<1, 0.96Zz +'
It can be seen that an element utilizing the pyroelectric effect in the <100> direction of a (100) oriented ferroelectric thin film having one of the compositions of WZ 1 has an excellent figure of merit.
発明の効果
以上の説明から明らかなように、本発明の素子は、すぐ
れた焦電効果を示し、高感度の赤外線検出素子になる。Effects of the Invention As is clear from the above description, the element of the present invention exhibits an excellent pyroelectric effect and becomes a highly sensitive infrared detection element.
Claims (1)
ｒ ｗ） ０３ で、下記ｉ成範囲Ｋ） 、 （Ｂ）
、 （Ｃ）のうちのいずれかの組成をもつ（００１）
配向した薄膜の配向軸の方向に発生する焦電気を利用す
ることを特徴とする焦電形熱検出素子。 （Ａ） Ｏ，７０ｌ ｘ （１、０，９０？ ｘ ＋ｙ
ｌ １ 、０．９５ごｘｌｌ、ｗ＝０ （Ｂ） ｘ ＝ １． ｙ ＝Ｏ、０，４５乙ｚ（１、
ｚ ＋ｗ＝（ｑ ０．８３１ｘ（１、ｘ＋ｙ＝１．０．
５０ｆｚ（１，０，９６ｆＺ ＋ｗｆ１（。[Claims] Chemical formula (P b x L a y ) (T i z Z
r w) 03, the following i range K), (B)
, (001) having the composition of (C)
A pyroelectric heat detection element characterized by utilizing pyroelectricity generated in the direction of the orientation axis of an oriented thin film. (A) O,70l x (1,0,90? x +y
l 1 , 0.95 xll, w=0 (B) x = 1. y = O, 0,45 otz (1,
z +w=(q 0.831x(1, x+y=1.0.
50fz(1,0,96fZ +wf1(.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240192A JPS60131704A (en) | 1983-12-20 | 1983-12-20 | Pyroelectric heat detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240192A JPS60131704A (en) | 1983-12-20 | 1983-12-20 | Pyroelectric heat detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60131704A true JPS60131704A (en) | 1985-07-13 |
Family
ID=17055825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58240192A Pending JPS60131704A (en) | 1983-12-20 | 1983-12-20 | Pyroelectric heat detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60131704A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162369A (en) * | 1986-01-13 | 1987-07-18 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film element |
| JPS62252006A (en) * | 1986-04-25 | 1987-11-02 | 松下電器産業株式会社 | Ferrodielectric thin film device |
| JPS62252005A (en) * | 1986-04-25 | 1987-11-02 | 松下電器産業株式会社 | Ferrodielectric thin film device |
| JPS63126116A (en) * | 1986-11-14 | 1988-05-30 | 松下電器産業株式会社 | Dielectric thin film element |
| JPH04331767A (en) * | 1991-05-08 | 1992-11-19 | Daishinku Co | Pyroelectric ceramic composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343899A (en) * | 1976-10-01 | 1978-04-20 | Murata Manufacturing Co | Orientation ferroodielectric thin film |
| JPS54107912A (en) * | 1978-02-14 | 1979-08-24 | Mitsubishi Metal Corp | Production of transparent ceramics |
| JPS5533736A (en) * | 1978-08-31 | 1980-03-10 | Kureha Chemical Ind Co Ltd | Method of manufacturing piezooelectric and current collecting high molecular composite material |
-
1983
- 1983-12-20 JP JP58240192A patent/JPS60131704A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343899A (en) * | 1976-10-01 | 1978-04-20 | Murata Manufacturing Co | Orientation ferroodielectric thin film |
| JPS54107912A (en) * | 1978-02-14 | 1979-08-24 | Mitsubishi Metal Corp | Production of transparent ceramics |
| JPS5533736A (en) * | 1978-08-31 | 1980-03-10 | Kureha Chemical Ind Co Ltd | Method of manufacturing piezooelectric and current collecting high molecular composite material |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162369A (en) * | 1986-01-13 | 1987-07-18 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film element |
| JPS62252006A (en) * | 1986-04-25 | 1987-11-02 | 松下電器産業株式会社 | Ferrodielectric thin film device |
| JPS62252005A (en) * | 1986-04-25 | 1987-11-02 | 松下電器産業株式会社 | Ferrodielectric thin film device |
| JPS63126116A (en) * | 1986-11-14 | 1988-05-30 | 松下電器産業株式会社 | Dielectric thin film element |
| JPH04331767A (en) * | 1991-05-08 | 1992-11-19 | Daishinku Co | Pyroelectric ceramic composition |
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