JPS62162369A - Ferroelectric thin film element - Google Patents
Ferroelectric thin film elementInfo
- Publication number
- JPS62162369A JPS62162369A JP61004529A JP452986A JPS62162369A JP S62162369 A JPS62162369 A JP S62162369A JP 61004529 A JP61004529 A JP 61004529A JP 452986 A JP452986 A JP 452986A JP S62162369 A JPS62162369 A JP S62162369A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric thin
- ferroelectric
- mgo
- oriented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は強誘電体薄膜素子、特に焦電型の赤外線センサ
等に適した強誘電体薄膜素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a ferroelectric thin film element, particularly to a ferroelectric thin film element suitable for pyroelectric infrared sensors and the like.
従来の技術
強誘電体薄膜素子は、赤外線センサのようなデバイスに
用いるのに適しており、特に半導体基板上に形成するこ
とにより、信号処理−デバイス一体型の装置を構成する
上でメリットが大である。Conventional technology Ferroelectric thin film elements are suitable for use in devices such as infrared sensors, and are especially advantageous when forming integrated signal processing and device devices by forming them on semiconductor substrates. It is.
従来の技術の一例を第２図に示す。半導体基板１上に強
誘電体薄膜″２を形成し、強誘電体薄膜２上に上部電極
３を形成したものである。例えば奥山らによって、Ｓｉ
基板上にチタン酸鉛を形成したという報告がなされてい
る。（奥山ら、フェロエレクトリクス、 １９８５．Ｖ
ｏｌ、６３．ｐｐ、２４３−２５２＞発明が解決しよう
とする問題点
上記強誘電体薄膜素子において強誘電体薄膜は、半導体
基板、特にＳｉ単結晶基板上へのエピタキシャル膜が未
だ実現されておらず、多結晶体であり分極軸が揃ってい
ないため、例えばＭｇＯ基板上に配向した強誘電体薄膜
に比べ材料特性が悪い。An example of the conventional technique is shown in FIG. A ferroelectric thin film ``2'' is formed on a semiconductor substrate 1, and an upper electrode 3 is formed on the ferroelectric thin film 2. For example, Okuyama et al.
It has been reported that lead titanate was formed on the substrate. (Okuyama et al., Ferroelectrics, 1985.V
ol, 63. pp, 243-252>Problems to be Solved by the Invention In the ferroelectric thin film device described above, epitaxial films on semiconductor substrates, especially Si single crystal substrates, have not yet been realized, and polycrystalline thin films have not yet been realized. Because the polarization axes are not aligned, the material properties are worse than, for example, a ferroelectric thin film oriented on an MgO substrate.
本発明は上記問題点を解決するもので、半導体基板上に
強誘電体薄膜を配向させ材料特性の良い信号処理デバイ
ス一体型の強誘電体薄膜素子を実現することを目的とす
る。The present invention solves the above problems, and aims to realize a ferroelectric thin film element integrated with a signal processing device with good material properties by aligning a ferroelectric thin film on a semiconductor substrate.
問題点を解決するための手段
半導体基板と、半導体基板上に形成したＭｇＯ薄膜と、
Ｍｇｏ薄膜上に形成した強誘電体薄膜とを有する強誘電
体薄膜素子を構成し、前記Ｍ ｇ Ｏ薄膜を（１００）
配向させる。Means for solving the problem A semiconductor substrate, an MgO thin film formed on the semiconductor substrate,
A ferroelectric thin film element having a ferroelectric thin film formed on an Mgo thin film is constructed, and the MgO thin film is (100)
Orient.
作用
半導体基板上に（１００）配向したＭｇＯ薄膜を作成す
ることにより、その上部に、分極軸方向に配向した強誘
電体薄膜を作成することができ、材料特性の良い強誘電
体薄膜素子が得られる。By creating a (100) oriented MgO thin film on a working semiconductor substrate, a ferroelectric thin film oriented in the direction of the polarization axis can be created on top of the MgO thin film, and a ferroelectric thin film element with good material properties can be obtained. It will be done.
実施例
第１図に本発明の一実施例を示す。半導体基板４上にＭ
ｇＯ薄膜５を形成し、ＭｇＯ薄膜５上に下部電極６を形
成し、下部電極６上に強誘電体薄膜７を形成し、強誘電
体薄膜７上に上部電極８を形成したものである。Embodiment FIG. 1 shows an embodiment of the present invention. M on the semiconductor substrate 4
A gO thin film 5 is formed, a lower electrode 6 is formed on the MgO thin film 5, a ferroelectric thin film 7 is formed on the lower electrode 6, and an upper electrode 8 is formed on the ferroelectric thin film 7.
半導体基板４としてシリコンウェハを用い、この上に（
１００）配向したＭｇＯ薄膜５をＲＦマグネトロンスパ
ッタリング法を用いて作成した。A silicon wafer is used as the semiconductor substrate 4, and (
100) An oriented MgO thin film 5 was created using an RF magnetron sputtering method.
（１００）面および（１１１）面の二種類のシリコンウ
ェハについて試したが、どちらの基板上でも（１００）
配向したＭｇＯ薄膜が得られた。We tested two types of silicon wafers, one with the (100) plane and the other with the (111) plane, but the (100)
An oriented MgO thin film was obtained.
上記ＭｇＯ薄膜５上の下部電極６として（１００）配向
した白金を用いた。この白金電極もＲＦマグネトロンス
パッタリング法によって作成した。また、強誘電体薄膜
７の作成にもＲＦマグネトロンスパッタリン°グ法を用
いた。上記ＭｇＯ薄膜５と上記下部電極６と強誘電体薄
膜７の作成条件を表１に示す。(100) oriented platinum was used as the lower electrode 6 on the MgO thin film 5. This platinum electrode was also created by RF magnetron sputtering. Further, the RF magnetron sputtering method was also used to create the ferroelectric thin film 7. Table 1 shows the conditions for forming the MgO thin film 5, the lower electrode 6, and the ferroelectric thin film 7.
表 １
なお、前記下部電極６を設けた場合と、下部電極６を付
けずに上記ＭｇＯ薄膜５上に直接強誘電体薄膜７を作成
した場合とを実験した。下部電極６上、Ｍ ｇ Ｏ薄膜
５上どちらにおいても（００１〉配向した強誘電体薄膜
７が得られた。Table 1 Note that experiments were conducted in the case where the lower electrode 6 was provided and the case where the ferroelectric thin film 7 was formed directly on the MgO thin film 5 without the lower electrode 6. A ferroelectric thin film 7 with (001> orientation) was obtained both on the lower electrode 6 and on the M g O thin film 5 .
下記化学式で表されろ強誘電体薄膜７は強誘電体材料、
特に焦電型赤外線センサとして特性が優れており、分極
軸を揃えることによりさらに特性向上を計ることができ
る。The ferroelectric thin film 7 is a ferroelectric material represented by the following chemical formula,
It has particularly excellent characteristics as a pyroelectric infrared sensor, and the characteristics can be further improved by aligning the polarization axes.
Ｐｂｘ Ｌａｙ ’ｒｉ２Ｚｒｗ ０３ａ） ０．７≦
ｘ≦１．０．９≦ｘ＋ｙ≦１．０．９５≦ｚ≦ｌ、ｗ＝
０ｂ） ｘ＝１、ｙ＝０、０．４５≦ｚ ＜ ｌ 、
ｚ＋ｗ−１ｃ） ０．８３≦ｘ≦ｌ 、Ｘ＋’／
＝１、０，５≦ＺＳＩ、０．９６≦Ｚ＋Ｗ≦１また、上
記組成における上記強誘電体材料は正方品となり分極軸
が（００１）方向であるため、（００１）配向させるこ
とにより電圧感度の高い焦電型赤外線センサを得ること
ができる。Pbx Lay'ri2Zrw 03a) 0.7≦
x≦1.0.9≦x+y≦1.0.95≦z≦l, w=
0b) x=1, y=0, 0.45≦z<l,
z+w-1c) 0.83≦x≦l, X+'/
=1, 0,5≦ZSI, 0.96≦Z+W≦1 Also, since the above ferroelectric material with the above composition is a square product and the polarization axis is in the (001) direction, the voltage sensitivity can be improved by (001) orientation. It is possible to obtain a pyroelectric infrared sensor with high efficiency.
上記組成のうちｘ＋ｙ＝ｌ 、 ｚ−１−ｘ／４ 、
ｗ−０である試料を作成し、そのＸ線回折を測定した。Among the above compositions, x+y=l, z-1-x/4,
A w-0 sample was prepared and its X-ray diffraction was measured.
その結果（００１）と（１００）以外の信号は殆ど観測
されず、どちらかに配向した微結界の集合となっている
ことがわかる。As a result, almost no signals other than (001) and (100) are observed, and it can be seen that the signal is a collection of fine barriers oriented in either direction.
また、次式に示すαを（００１）配向率として、各Ｘに
ついてのαを求めた。この結果を表２に示す。Further, α for each X was determined by setting α shown in the following formula to the (001) orientation rate. The results are shown in Table 2.
α＝ ｒ （００＋１ ／ （１（＋００１ ＋ｒ （
ｏｏＩ））１（１００）：（１００）ピークのカウント
数１（００１）：（００１）ピークのカウント数表
２
以上のように、シリコンウェハ上にＭｇＯ薄膜を作成す
ることにより、配向し、分極軸の揃った強誘電体薄膜を
作成することができ、材料特性の良い強誘電体薄膜素子
を作成できる。また、半導体上に作成しているため、信
号処理デバイス一体型として雑音低下、小型化を計るこ
とができる。α= r (00+1 / (1(+001 +r (
ooI)) 1 (100): (100) Peak count number 1 (001): (001) Peak count number table
2. As described above, by forming an MgO thin film on a silicon wafer, a ferroelectric thin film that is oriented and has aligned polarization axes can be formed, and a ferroelectric thin film element with good material properties can be formed. Additionally, since it is fabricated on a semiconductor, it can be integrated with a signal processing device, reducing noise and reducing size.
発明の効果
本発明によれば、半導体基板上に（１００）配向したＭ
ｇＯ薄膜を作成することにより、分極軸方向に配向した
強誘電体薄膜を半導体基板上に作成することができるよ
うになり、材料特性の良い強誘電体薄膜素子が得られる
。Effects of the Invention According to the present invention, (100) oriented M
By creating a gO thin film, a ferroelectric thin film oriented in the direction of the polarization axis can be created on a semiconductor substrate, and a ferroelectric thin film element with good material properties can be obtained.
第１図は本発明の一実施例における強誘電体薄膜素子の
断面図、第２図は従来例を示す断面図である。
４・・・・・・半導体基板、５・・・・・・Ｍ ｇ Ｏ
薄膜、６・・・・・・下部電極、７・・・・・・強誘電
体薄膜、８・・・・・・上部電極。FIG. 1 is a sectional view of a ferroelectric thin film element according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional example. 4... Semiconductor substrate, 5... M g O
Thin film, 6... lower electrode, 7... ferroelectric thin film, 8... upper electrode.
Claims (5)
膜と、ＭｇＯ薄膜上に形成した強誘電体薄膜とを有し、
前記ＭｇＯ薄膜が（１００）配向している強誘電体薄膜
素子。(1) It has a semiconductor substrate, an MgO thin film formed on the semiconductor substrate, and a ferroelectric thin film formed on the MgO thin film,
A ferroelectric thin film element in which the MgO thin film is (100) oriented.
ｗＯ＿３で表され、 ａ）０．７≦ｘ≦１、０．９≦ｘ＋ｙ≦１、０．９５≦
ｚ≦１、ｗ＝０ｂ）ｘ＝１、ｙ＝０、０．４５≦ｚ＜１
、ｚ＋ｗ＝１ｃ）０．８３≦ｘ≦１、ｘ＋ｙ＝１、０．
５≦ｚ＜１、０．９６≦ｚ＋ｗ≦１のいずれかの組成を
有する特許請求の範囲第１項記載の強誘電体薄膜素子。(2) Ferroelectric thin film is Pb_xLa_yTi_zZr_
Represented by wO_3, a) 0.7≦x≦1, 0.9≦x+y≦1, 0.95≦
z≦1, w=0b) x=1, y=0, 0.45≦z<1
, z+w=1c) 0.83≦x≦1, x+y=1, 0.
The ferroelectric thin film element according to claim 1, having a composition of either 5≦z<1, 0.96≦z+w≦1.
求の範囲第１項記載の強誘電体薄膜素子。(3) The ferroelectric thin film element according to claim 1, wherein the ferroelectric thin film has a (001) orientation plane.
を下部電極とした特許請求の範囲第１項記載の強誘電体
薄膜素子。(4) A ferroelectric thin film element according to claim 1, wherein an upper electrode is formed on the ferroelectric thin film, and a semiconductor substrate is used as the lower electrode.
膜と強誘電体薄膜との間に形成した下部電極を有し、前
記下部電極が（１００）配向している白金薄膜であるこ
とを特徴とする特許請求の範囲第１項記載の強誘電体薄
膜素子。(5) It has an upper electrode formed on a ferroelectric thin film and a lower electrode formed between an MgO thin film and a ferroelectric thin film, and the lower electrode is a platinum thin film with (100) orientation. A ferroelectric thin film element according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61004529A JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61004529A JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62162369A true JPS62162369A (en) | 1987-07-18 |
| JPH0685450B2 JPH0685450B2 (en) | 1994-10-26 |
Family
ID=11586571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61004529A Expired - Fee Related JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0685450B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211520A (en) * | 1986-03-12 | 1987-09-17 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared sensor |
| EP0596329A1 (en) * | 1992-11-04 | 1994-05-11 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| US5507080A (en) * | 1993-12-07 | 1996-04-16 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a capacitance sensor |
| US5612536A (en) * | 1994-02-07 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| US5776621A (en) * | 1992-12-25 | 1998-07-07 | Fuji Xerox Co., Ltd. | Oriented ferroelectric thin film element |
| JP2011013224A (en) * | 2010-08-06 | 2011-01-20 | Hochiki Corp | Manufacturing method of infrared detection element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60131704A (en) * | 1983-12-20 | 1985-07-13 | 松下電器産業株式会社 | Pyroelectric heat detecting element |
| JPS61185808A (en) * | 1985-02-14 | 1986-08-19 | 日本電気株式会社 | Making process of orientation thin film for ferrodielectric compound |
-
1986
- 1986-01-13 JP JP61004529A patent/JPH0685450B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60131704A (en) * | 1983-12-20 | 1985-07-13 | 松下電器産業株式会社 | Pyroelectric heat detecting element |
| JPS61185808A (en) * | 1985-02-14 | 1986-08-19 | 日本電気株式会社 | Making process of orientation thin film for ferrodielectric compound |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211520A (en) * | 1986-03-12 | 1987-09-17 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared sensor |
| EP0596329A1 (en) * | 1992-11-04 | 1994-05-11 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| US5413667A (en) * | 1992-11-04 | 1995-05-09 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector fabricating method |
| US5483067A (en) * | 1992-11-04 | 1996-01-09 | Matsuhita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| EP0764990A1 (en) * | 1992-11-04 | 1997-03-26 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| US5776621A (en) * | 1992-12-25 | 1998-07-07 | Fuji Xerox Co., Ltd. | Oriented ferroelectric thin film element |
| US5507080A (en) * | 1993-12-07 | 1996-04-16 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a capacitance sensor |
| US5612536A (en) * | 1994-02-07 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| US6105225A (en) * | 1994-02-07 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a thin film sensor element |
| JP2011013224A (en) * | 2010-08-06 | 2011-01-20 | Hochiki Corp | Manufacturing method of infrared detection element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0685450B2 (en) | 1994-10-26 |
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| LAPS | Cancellation because of no payment of annual fees |