JPS6012777A - Photoconductive element - Google Patents
Photoconductive elementInfo
- Publication number
- JPS6012777A JPS6012777A JP58120527A JP12052783A JPS6012777A JP S6012777 A JPS6012777 A JP S6012777A JP 58120527 A JP58120527 A JP 58120527A JP 12052783 A JP12052783 A JP 12052783A JP S6012777 A JPS6012777 A JP S6012777A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoconductive
- electrode
- epoxy resin
- in2te3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 229920002050 silicone resin Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、（Ｚｎ１−ｘｃｄｘＴｅ ）１−ｙ （Ｉ
ｎ２ Ｔｅａ） ｙを主成分とする膜とこの膜よりもバ
ンドギャップの大きいＺｎ１＋ｕ ＣｄｕＳ 、 Ｚｎ
５ｌ−ｖＳｓｖ、 ｃａｓｌ−、、Ｓｅ、。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to (Zn1-xcdxTe)1-y (I
n2 Tea) A film whose main component is y and Zn1+u CduS, Zn which has a larger band gap than this film.
5l-vSsv, casl-,, Se,.
などからなる膜との異種接合よりなる光導電素子゛に関
するものである。The present invention relates to a photoconductive element formed by a heterojunction with a film made of such materials.
恵−
従来の構成とその問題点
従来、光導電素子としてはＣｄＳセル、シリコンブルー
セル、ＧａＡｓＰホトダイオードなどがある。Megumi - Conventional configurations and their problems Conventionally, photoconductive elements include CdS cells, silicon blue cells, GaAsP photodiodes, and the like.
ＣｄＳセルは安価であり、小形で大電流が得られるなど
の長所を有する。しかし、応答速度が遅い。CdS cells have advantages such as being inexpensive, small, and capable of obtaining a large current. However, the response speed is slow.
疲労現象がある。リーク電流が大きいなどの欠点を有し
ている。シリコンブルーセル、ＧａＡｓＰホトダイオー
ドについては高価であるという欠点がある。There is a fatigue phenomenon. It has drawbacks such as large leakage current. Silicon blue cells and GaAsP photodiodes have the disadvantage of being expensive.
特公昭５０−３７５１３号公報などの（Ｚｎ１−ＸＣｄ
、 Ｔｅ）１−ｙ （Ｉｎ２Ｔｅ３）、を主成分とする
膜とこの膜よシも大きいバンドギャップを有する膜との
異種接合よりなる光導電膜も提案されている。上記公報
の発明は低暗電流の撮像管ターゲットを提供・するもの
であシ、可視光全域に高い感度を持つものであった。こ
の光導電膜を応用して空気中で安定な受光素子とするに
は、寿命、信頼性を確保するために封止が必要である。(Zn1-XCd) such as Japanese Patent Publication No. 50-37513
, Te)1-y (In2Te3), and a film having a larger band gap than this film, a photoconductive film has also been proposed. The invention disclosed in the above-mentioned publication provides an image pickup tube target with low dark current and high sensitivity over the entire visible light range. In order to apply this photoconductive film to a light-receiving element that is stable in the air, sealing is required to ensure longevity and reliability.
従来の封止法にエポキシ系、ビニール系などの合成樹脂
層を塗布などの方法で形成したものがある。これはハー
メチックケースによる封止法に比べて製法が簡単で量量
的であり、製造費用が安価である利点がある。Conventional sealing methods include methods such as coating a layer of synthetic resin such as epoxy or vinyl. This has the advantage that the manufacturing method is simpler, the quantity is larger, and the manufacturing cost is lower than the sealing method using a hermetic case.
しかし、上記異種接合よりなる光導電膜を上記のような
樹脂によシ封止すると、動作電圧が高くなるという問題
が生じていた。本発明は、かかる欠点を克服するために
行なわれたものである。However, when the photoconductive film made of the above-mentioned dissimilar junctions is sealed with the above-mentioned resin, a problem arises in that the operating voltage becomes high. The present invention has been made to overcome these drawbacks.
発明の目的
本発明は、異種接合よりなる光導電膜を樹脂封止するこ
とにより動作電圧が高くなるという問題点を解決し、可
視光全域に高感度、低暗電流の特徴を有し、安価な光導
電素子を提供するものである。Purpose of the Invention The present invention solves the problem of high operating voltage by resin-sealing a photoconductive film made of dissimilar junctions, has features of high sensitivity in the entire visible light range, low dark current, and is inexpensive. The present invention provides a photoconductive element.
発明の構成
本発明は、透光性基板上に、（ｚｎｌ−１ｃｄり１−ア
（Ｉ ｎ２ 、Ｔｅ ３）アを主成分とする膜とこの膜
よりも大きいバンドギャップを有する膜との異種接合よ
シなる光導電膜と、信号の取り出し電極と、光入射側以
外の部分にエポキシ樹脂による封止を行ない、さらにエ
ポキシ樹脂の光導電膜側の部分にシリコン樹脂を介在し
たことを特徴とするもので、従来の樹脂封止において発
生する動作電圧が高くなるという問題点を解決したもの
である。Structure of the Invention The present invention provides a method for disposing a film of different types on a light-transmitting substrate, including a film mainly composed of (znl-1cd 1-a(I n2 , Te 3)a) and a film having a larger band gap than this film. The photoconductive film used for bonding, the signal extraction electrode, and the parts other than the light incident side are sealed with epoxy resin, and silicone resin is further interposed in the part of the epoxy resin on the photoconductive film side. This solves the problem of high operating voltage that occurs in conventional resin sealing.
実施例の説明 以下本発明の一実施例について図面とともに説明する。Description of examples An embodiment of the present invention will be described below with reference to the drawings.
本発明の構造を図に示す。The structure of the present invention is shown in the figure.
まず、真空蒸着装置により真空度５ Ｘ １Ｏ−５ｔｏ
ｒｒ程度以下のもとで、透明導電性膜（ＩＴＯ）１を被
着形成したガラス基板２上に、Ｚｎ５ｅからなる膜３を
基板温度１６０°〜３００℃において蒸着源温度８００
〜１０００℃の範囲で０．０６〜０．１μｍの膜厚に蒸
着する。つぎに、この上に（Ｚｎ１．−ｘＣｄ工Ｔｅ
） １−ア（Ｉｎ２Ｔｅｊ）アからなる膜４を基板温度
１００〜２６０℃において蒸着源温度７００〜９００℃
の範囲で１〜３μｍの膜厚に蒸着する。そしてその後、
この膜を不活性ガス雰囲気中もしくは真空中において温
度４００〜６００℃の範囲で６〜６０分の熱処理をする
。更にその上に、電極５としてＡｕを０．０１〜０．６
μｍの膜厚に蒸着する。透明導電性膜３および電極６に
それぞれリード線６．７を接続した後、本発明に関わる
シリコン樹脂層８を形成し、最後にエポキシ樹脂９を１
００〜２００℃で硬化を行ない封止金する。First, the degree of vacuum is 5 x 1O-5to using a vacuum evaporation device.
A film 3 made of Zn5e is deposited on a glass substrate 2 on which a transparent conductive film (ITO) 1 has been deposited at a temperature of 800° C. at a substrate temperature of 160° to 300° C.
It is deposited to a film thickness of 0.06 to 0.1 μm at a temperature of ~1000°C. Next, on top of this (Zn1.-xCd Te
) 1-A (In2Tej)A film 4 is deposited at a substrate temperature of 100-260°C and a deposition source temperature of 700-900°C.
The film is deposited to a thickness of 1 to 3 μm within the range of . And after that
This film is heat treated in an inert gas atmosphere or vacuum at a temperature in the range of 400 to 600°C for 6 to 60 minutes. Furthermore, on top of that, 0.01 to 0.6 Au is applied as the electrode 5.
Deposit to a film thickness of μm. After connecting the lead wires 6.7 to the transparent conductive film 3 and the electrodes 6, a silicone resin layer 8 according to the present invention is formed, and finally an epoxy resin 9 is applied.
Curing is performed at 00 to 200°C to form a sealant.
上記の製造方法により製造された光導電素子の特性と従
来のシリコン樹脂層８を形成しない光導電素子の特性と
を表に示す。The characteristics of the photoconductive element manufactured by the above manufacturing method and the characteristics of the conventional photoconductive element without silicone resin layer 8 are shown in the table.
従来の光導電素子については、樹脂封止前の特性も比較
のために示した。印加電圧の極性は、透明導電性膜３が
７リス、Ａｕ電極がマイナスであり、光電流は、光源の
色温度３２０００にでの２ 、６５ｔＸの照度である。Regarding the conventional photoconductive element, the characteristics before resin sealing are also shown for comparison. The polarity of the applied voltage was 7 tX for the transparent conductive film 3 and negative for the Au electrode, and the photocurrent was 2.65 tX illumination at a color temperature of the light source of 32,000.
表から明らかなように。As is clear from the table.
本発明の光導電素子においては動作電圧の変化は認めら
れず良好な特性であることがわかる。また、本発明にお
いて２層の樹脂を用いた理由は、シリコン樹脂層８だけ
は特性の長期安定性が悪いだめである。これはシリコン
樹脂の接着力に問題があると思われる。No change in operating voltage was observed in the photoconductive element of the present invention, indicating that it has good characteristics. Further, the reason why two layers of resin are used in the present invention is that only the silicone resin layer 8 has poor long-term stability of properties. This seems to be due to a problem with the adhesive strength of the silicone resin.
発明の詳細
な説明した様に、本発明による光導電素子は蒸着法によ
り製造することができるため量産的であシ、高感度、低
暗電流の特徴を有している。As described in detail, the photoconductive element according to the present invention can be manufactured by a vapor deposition method, and therefore has the characteristics of mass production, high sensitivity, and low dark current.
図は本発明の一実施例の光導電素子の断面図である。
１・・・・・・透明導電性膜、２・・・・・・ガラス基
板、３・・・・−・ＺｎＥ３ｅ膜、４ ・・−・−（Ｚ
ｎ１−ｘ ｃｃｉｘＴｅ）１−ｙ （ｌｎ２Ｔｅ３）ア
膜、８・・・・・・シリコン樹脂層、９・・・・・・エ
ポキシ樹脂。The figure is a sectional view of a photoconductive element according to an embodiment of the present invention. 1...Transparent conductive film, 2...Glass substrate, 3...--ZnE3e film, 4...--(Z
n1-x ccixTe)1-y (ln2Te3) film, 8... silicone resin layer, 9... epoxy resin.
Claims (1)
１−。 （ｌｎ２Ｔｅａ）アを主成分とする物質よりも大きいノ
（ンドギャップを有する膜と前記（Ｚｎ１−ｘＣｄｘＴ
ｅ ）１−ア（Ｉｎ２Ｔｅ３）アを主成分とする膜との
異種接合よりなる光導電膜と、光入射側以外の部分の被
覆にエポキシ樹脂とを具備し、前記エポキシ樹脂の前記
光導電膜側にシリコン樹脂層を介在−させたことを特徴
とする光導電素子。[Claims] An electrode on a transparent substrate, (Zn1-xCdxTe)
1-. (ln2Tea) A film having a larger gap than the material whose main component is (Zn1-xCdxT)
e) A photoconductive film formed by heterojunction with a film containing 1-A(In2Te3)A as a main component, and an epoxy resin covering a portion other than the light incident side, and the photoconductive film of the epoxy resin A photoconductive element characterized by having a silicone resin layer interposed on its side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120527A JPS6012777A (en) | 1983-07-01 | 1983-07-01 | Photoconductive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120527A JPS6012777A (en) | 1983-07-01 | 1983-07-01 | Photoconductive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6012777A true JPS6012777A (en) | 1985-01-23 |
Family
ID=14788467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58120527A Pending JPS6012777A (en) | 1983-07-01 | 1983-07-01 | Photoconductive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6012777A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683062A (en) * | 1979-12-12 | 1981-07-07 | Toshiba Corp | Photo-semiconductor device |
-
1983
- 1983-07-01 JP JP58120527A patent/JPS6012777A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683062A (en) * | 1979-12-12 | 1981-07-07 | Toshiba Corp | Photo-semiconductor device |
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