JPS6012777A - Photoconductive element - Google Patents

Photoconductive element

Info

Publication number
JPS6012777A
JPS6012777A JP58120527A JP12052783A JPS6012777A JP S6012777 A JPS6012777 A JP S6012777A JP 58120527 A JP58120527 A JP 58120527A JP 12052783 A JP12052783 A JP 12052783A JP S6012777 A JPS6012777 A JP S6012777A
Authority
JP
Japan
Prior art keywords
film
photoconductive
electrode
epoxy resin
in2te3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58120527A
Other languages
Japanese (ja)
Inventor
Yoshitaka Aoki
青木 芳孝
Etsuya Takeda
悦矢 武田
Kazumi Sadamatsu
和美 貞松
Shinji Fujiwara
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58120527A priority Critical patent/JPS6012777A/en
Publication of JPS6012777A publication Critical patent/JPS6012777A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the titled element having high sensitivities over the whole range of visible rays and less dark current by a method wherein a photoconductive film of the hetero junction of a film containing (Zn1-xCdx)1-y(In2Te3)y as the main component with a film having a larger band gap than that of the film and a signal lead-out electrode are provided on a photo transmitting substrate, the part other than the light incidence side being sealed with epoxy resin, and silicon resin being interposed in the part on the side of the photoconductive film. CONSTITUTION:A transparent conductive film 1 made of ITO is formed on one surface of a glass substrate 2, and a ZnSe film 3 is adhered at a fixed part thereon. Next, the film 4 composed of (Zn1-xCdxTe)1-y(In2Te3)y is laminated thereon, which is then subjected to required heat treatment in an atmosphere of inert gas or in vacuum. Thereafter, an Au electrode 5 is mounted to the layer 4, and lead wires 6 and 7 are connected to the film 3 and the electrode 5, respectively. The titled element thus constructed, the exposed surfaces of the film 3 and 4 other than on the side of the substrate 2 is surrounded with the silicon resin layer 8, which is sealed with the epoxy resin 9.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、(Zn1−xcdxTe )1−y (I 
n2 Tea) yを主成分とする膜とこの膜よりもバ
ンドギャップの大きいZn1+u CduS 、 Zn
5l−vSsv、 casl−、、Se、。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to (Zn1-xcdxTe)1-y (I
n2 Tea) A film whose main component is y and Zn1+u CduS, Zn which has a larger band gap than this film.
5l-vSsv, casl-,, Se,.

などからなる膜との異種接合よりなる光導電素子゛に関
するものである。
The present invention relates to a photoconductive element formed by a heterojunction with a film made of such materials.

恵− 従来の構成とその問題点 従来、光導電素子としてはCdSセル、シリコンブルー
セル、GaAsPホトダイオードなどがある。
Megumi - Conventional configurations and their problems Conventionally, photoconductive elements include CdS cells, silicon blue cells, GaAsP photodiodes, and the like.

CdSセルは安価であり、小形で大電流が得られるなど
の長所を有する。しかし、応答速度が遅い。
CdS cells have advantages such as being inexpensive, small, and capable of obtaining a large current. However, the response speed is slow.

疲労現象がある。リーク電流が大きいなどの欠点を有し
ている。シリコンブルーセル、GaAsPホトダイオー
ドについては高価であるという欠点がある。
There is a fatigue phenomenon. It has drawbacks such as large leakage current. Silicon blue cells and GaAsP photodiodes have the disadvantage of being expensive.

特公昭50−37513号公報などの(Zn1−XCd
、 Te)1−y (In2Te3)、を主成分とする
膜とこの膜よシも大きいバンドギャップを有する膜との
異種接合よりなる光導電膜も提案されている。上記公報
の発明は低暗電流の撮像管ターゲットを提供・するもの
であシ、可視光全域に高い感度を持つものであった。こ
の光導電膜を応用して空気中で安定な受光素子とするに
は、寿命、信頼性を確保するために封止が必要である。
(Zn1-XCd) such as Japanese Patent Publication No. 50-37513
, Te)1-y (In2Te3), and a film having a larger band gap than this film, a photoconductive film has also been proposed. The invention disclosed in the above-mentioned publication provides an image pickup tube target with low dark current and high sensitivity over the entire visible light range. In order to apply this photoconductive film to a light-receiving element that is stable in the air, sealing is required to ensure longevity and reliability.

従来の封止法にエポキシ系、ビニール系などの合成樹脂
層を塗布などの方法で形成したものがある。これはハー
メチックケースによる封止法に比べて製法が簡単で量量
的であり、製造費用が安価である利点がある。
Conventional sealing methods include methods such as coating a layer of synthetic resin such as epoxy or vinyl. This has the advantage that the manufacturing method is simpler, the quantity is larger, and the manufacturing cost is lower than the sealing method using a hermetic case.

しかし、上記異種接合よりなる光導電膜を上記のような
樹脂によシ封止すると、動作電圧が高くなるという問題
が生じていた。本発明は、かかる欠点を克服するために
行なわれたものである。
However, when the photoconductive film made of the above-mentioned dissimilar junctions is sealed with the above-mentioned resin, a problem arises in that the operating voltage becomes high. The present invention has been made to overcome these drawbacks.

発明の目的 本発明は、異種接合よりなる光導電膜を樹脂封止するこ
とにより動作電圧が高くなるという問題点を解決し、可
視光全域に高感度、低暗電流の特徴を有し、安価な光導
電素子を提供するものである。
Purpose of the Invention The present invention solves the problem of high operating voltage by resin-sealing a photoconductive film made of dissimilar junctions, has features of high sensitivity in the entire visible light range, low dark current, and is inexpensive. The present invention provides a photoconductive element.

発明の構成 本発明は、透光性基板上に、(znl−1cdり1−ア
(I n2 、Te 3)アを主成分とする膜とこの膜
よりも大きいバンドギャップを有する膜との異種接合よ
シなる光導電膜と、信号の取り出し電極と、光入射側以
外の部分にエポキシ樹脂による封止を行ない、さらにエ
ポキシ樹脂の光導電膜側の部分にシリコン樹脂を介在し
たことを特徴とするもので、従来の樹脂封止において発
生する動作電圧が高くなるという問題点を解決したもの
である。
Structure of the Invention The present invention provides a method for disposing a film of different types on a light-transmitting substrate, including a film mainly composed of (znl-1cd 1-a(I n2 , Te 3)a) and a film having a larger band gap than this film. The photoconductive film used for bonding, the signal extraction electrode, and the parts other than the light incident side are sealed with epoxy resin, and silicone resin is further interposed in the part of the epoxy resin on the photoconductive film side. This solves the problem of high operating voltage that occurs in conventional resin sealing.

実施例の説明 以下本発明の一実施例について図面とともに説明する。Description of examples An embodiment of the present invention will be described below with reference to the drawings.

本発明の構造を図に示す。The structure of the present invention is shown in the figure.

まず、真空蒸着装置により真空度5 X 1O−5to
rr程度以下のもとで、透明導電性膜(ITO)1を被
着形成したガラス基板2上に、Zn5eからなる膜3を
基板温度160°〜300℃において蒸着源温度800
〜1000℃の範囲で0.06〜0.1μmの膜厚に蒸
着する。つぎに、この上に(Zn1.−xCd工Te 
) 1−ア(In2Tej)アからなる膜4を基板温度
100〜260℃において蒸着源温度700〜900℃
の範囲で1〜3μmの膜厚に蒸着する。そしてその後、
この膜を不活性ガス雰囲気中もしくは真空中において温
度400〜600℃の範囲で6〜60分の熱処理をする
。更にその上に、電極5としてAuを0.01〜0.6
μmの膜厚に蒸着する。透明導電性膜3および電極6に
それぞれリード線6.7を接続した後、本発明に関わる
シリコン樹脂層8を形成し、最後にエポキシ樹脂9を1
00〜200℃で硬化を行ない封止金する。
First, the degree of vacuum is 5 x 1O-5to using a vacuum evaporation device.
A film 3 made of Zn5e is deposited on a glass substrate 2 on which a transparent conductive film (ITO) 1 has been deposited at a temperature of 800° C. at a substrate temperature of 160° to 300° C.
It is deposited to a film thickness of 0.06 to 0.1 μm at a temperature of ~1000°C. Next, on top of this (Zn1.-xCd Te
) 1-A (In2Tej)A film 4 is deposited at a substrate temperature of 100-260°C and a deposition source temperature of 700-900°C.
The film is deposited to a thickness of 1 to 3 μm within the range of . And after that
This film is heat treated in an inert gas atmosphere or vacuum at a temperature in the range of 400 to 600°C for 6 to 60 minutes. Furthermore, on top of that, 0.01 to 0.6 Au is applied as the electrode 5.
Deposit to a film thickness of μm. After connecting the lead wires 6.7 to the transparent conductive film 3 and the electrodes 6, a silicone resin layer 8 according to the present invention is formed, and finally an epoxy resin 9 is applied.
Curing is performed at 00 to 200°C to form a sealant.

上記の製造方法により製造された光導電素子の特性と従
来のシリコン樹脂層8を形成しない光導電素子の特性と
を表に示す。
The characteristics of the photoconductive element manufactured by the above manufacturing method and the characteristics of the conventional photoconductive element without silicone resin layer 8 are shown in the table.

従来の光導電素子については、樹脂封止前の特性も比較
のために示した。印加電圧の極性は、透明導電性膜3が
7リス、Au電極がマイナスであり、光電流は、光源の
色温度32000にでの2 、65tXの照度である。
Regarding the conventional photoconductive element, the characteristics before resin sealing are also shown for comparison. The polarity of the applied voltage was 7 tX for the transparent conductive film 3 and negative for the Au electrode, and the photocurrent was 2.65 tX illumination at a color temperature of the light source of 32,000.

表から明らかなように。As is clear from the table.

本発明の光導電素子においては動作電圧の変化は認めら
れず良好な特性であることがわかる。また、本発明にお
いて2層の樹脂を用いた理由は、シリコン樹脂層8だけ
は特性の長期安定性が悪いだめである。これはシリコン
樹脂の接着力に問題があると思われる。
No change in operating voltage was observed in the photoconductive element of the present invention, indicating that it has good characteristics. Further, the reason why two layers of resin are used in the present invention is that only the silicone resin layer 8 has poor long-term stability of properties. This seems to be due to a problem with the adhesive strength of the silicone resin.

発明の詳細 な説明した様に、本発明による光導電素子は蒸着法によ
り製造することができるため量産的であシ、高感度、低
暗電流の特徴を有している。
As described in detail, the photoconductive element according to the present invention can be manufactured by a vapor deposition method, and therefore has the characteristics of mass production, high sensitivity, and low dark current.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例の光導電素子の断面図である。 1・・・・・・透明導電性膜、2・・・・・・ガラス基
板、3・・・・−・ZnE3e膜、4 ・・−・−(Z
n1−x ccixTe)1−y (ln2Te3)ア
膜、8・・・・・・シリコン樹脂層、9・・・・・・エ
ポキシ樹脂。
The figure is a sectional view of a photoconductive element according to an embodiment of the present invention. 1...Transparent conductive film, 2...Glass substrate, 3...--ZnE3e film, 4...--(Z
n1-x ccixTe)1-y (ln2Te3) film, 8... silicone resin layer, 9... epoxy resin.

Claims (1)

【特許請求の範囲】 透光性基板上に、電極と、 (Zn1−xCdxTe)
1−。 (ln2Tea)アを主成分とする物質よりも大きいノ
(ンドギャップを有する膜と前記(Zn1−xCdxT
e )1−ア(In2Te3)アを主成分とする膜との
異種接合よりなる光導電膜と、光入射側以外の部分の被
覆にエポキシ樹脂とを具備し、前記エポキシ樹脂の前記
光導電膜側にシリコン樹脂層を介在−させたことを特徴
とする光導電素子。
[Claims] An electrode on a transparent substrate, (Zn1-xCdxTe)
1-. (ln2Tea) A film having a larger gap than the material whose main component is (Zn1-xCdxT)
e) A photoconductive film formed by heterojunction with a film containing 1-A(In2Te3)A as a main component, and an epoxy resin covering a portion other than the light incident side, and the photoconductive film of the epoxy resin A photoconductive element characterized by having a silicone resin layer interposed on its side.
JP58120527A 1983-07-01 1983-07-01 Photoconductive element Pending JPS6012777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58120527A JPS6012777A (en) 1983-07-01 1983-07-01 Photoconductive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58120527A JPS6012777A (en) 1983-07-01 1983-07-01 Photoconductive element

Publications (1)

Publication Number Publication Date
JPS6012777A true JPS6012777A (en) 1985-01-23

Family

ID=14788467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58120527A Pending JPS6012777A (en) 1983-07-01 1983-07-01 Photoconductive element

Country Status (1)

Country Link
JP (1) JPS6012777A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683062A (en) * 1979-12-12 1981-07-07 Toshiba Corp Photo-semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683062A (en) * 1979-12-12 1981-07-07 Toshiba Corp Photo-semiconductor device

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