JPS60123782A - Ferromagnetic thin film magnetic resistance sensor - Google Patents
Ferromagnetic thin film magnetic resistance sensorInfo
- Publication number
- JPS60123782A JPS60123782A JP58232052A JP23205283A JPS60123782A JP S60123782 A JPS60123782 A JP S60123782A JP 58232052 A JP58232052 A JP 58232052A JP 23205283 A JP23205283 A JP 23205283A JP S60123782 A JPS60123782 A JP S60123782A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- thin film
- substrate
- reinforcing resin
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は強磁性体薄膜磁気抵抗センサ、特にそのチップ
組立て構造に係る。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a ferromagnetic thin film magnetoresistive sensor, and particularly to its chip assembly structure.
〈従来技術〉
従来、強磁性体薄膜磁気抵抗センサ(以下MRセンサと
呼ぶ)のチップ組立て法としては、公知のトランスファ
モールド技術による組立てや、MRチップにリード線を
直接半田付けする組立て方法が用いられる。しかしなが
ら、これらの組立て構造ではMR部からの飛び出し量が
大きくなっているので、該構造によるMRセンサは、M
R部を極力磁気媒体に近づける必要があるセンサ、例え
ばVTRキャプスタンモータのFG信号検出用、磁気ホ
ンコーダ用おして使用するには非常に不適滴なデバイス
構造になっている。<Prior art> Conventionally, as a chip assembly method for a ferromagnetic thin film magnetoresistive sensor (hereinafter referred to as an MR sensor), an assembly method using a known transfer molding technique or an assembly method in which lead wires are soldered directly to an MR chip have been used. It will be done. However, in these assembled structures, the amount of protrusion from the MR section is large, so the MR sensor with this structure
The device structure is extremely unsuitable for use in sensors that require the R section to be as close to the magnetic medium as possible, such as for detecting FG signals of VTR capstan motors and magnetic phone coders.
第1図はMRチップにリード線を直接半田付けした場合
のMRセンサ断面図である。FIG. 1 is a cross-sectional view of an MR sensor in which lead wires are directly soldered to the MR chip.
MRチップはガラス基板1上に強磁性体磁気抵抗薄膜2
及びパシベーション膜3を形成して構成され、このM’
Rチップにリード線4が直接半田付けされる。リード線
4は例えば6謔径の導体からなるものであり、これを複
数本盤べてMRチップに半田付けしている。図の斜線部
5t/′i半田付は部全示し、エポキシ樹脂6けこの半
田付は部5の補強用にモールドされたものである。The MR chip has a ferromagnetic magnetoresistive thin film 2 on a glass substrate 1.
and passivation film 3 are formed, and this M'
Lead wires 4 are soldered directly to the R chip. The lead wire 4 is made of a conductor having a diameter of 6 cm, for example, and a plurality of lead wires 4 are soldered to the MR chip. The shaded part 5t/'i soldering in the figure shows the entire part, and the soldering part 6 made of epoxy resin is molded to reinforce the part 5.
このように径の太い各1本ずつのリード線4が半田付け
されるため、MRmからの飛び出し量は、半田付は都5
、リード線4、半田付は部補強用のエポキシ樹脂6を合
計した厚さとなる。またガラス基板1の下方にも、半田
付は部補強用のエポキシ樹脂6が大きく飛び出す。Since each lead wire 4 with a large diameter is soldered in this way, the amount of protrusion from the MRm is
, the lead wire 4, and the soldering thickness are the total thickness of the epoxy resin 6 for reinforcing the part. Furthermore, the epoxy resin 6 for reinforcing the soldering part protrudes greatly from the bottom of the glass substrate 1.
〈発明の目的〉
木登F3Aは上記点に鑑み、M Rfa、からの飛び出
し量を押えたM’Rセンサのチップ組立て構造を提供す
るものである。<Object of the Invention> In view of the above points, the Kinoto F3A provides a chip assembly structure of an M'R sensor that suppresses the amount of protrusion from the M'Rfa.
〈実施例〉
第2図、第3図に本発明の各実施例によるMRセンサの
断面図を示す。<Embodiments> FIGS. 2 and 3 show cross-sectional views of MR sensors according to embodiments of the present invention.
MRチップはガラス基板11上に強磁性体磁気抵抗薄膜
12及び第11更にはここでは第2のバンベーション膜
13.14を形成して構成される。The MR chip is constructed by forming on a glass substrate 11 a ferromagnetic magnetoresistive thin film 12, an eleventh film, and here a second Vanvation film 13, 14.
外部配線用基板としては、予じめ配線パターンを形成し
たフレキシブル基板15(第2図)又はリジッド基板1
6(第3図)が用いられ、MRチップはこれらの配線パ
ターンと直接半田付けされる。The external wiring board may be a flexible board 15 (FIG. 2) on which a wiring pattern is formed in advance or a rigid board 1.
6 (FIG. 3) are used, and the MR chip is directly soldered to these wiring patterns.
MR部からの飛び出し量は、最大、半田付は都17の厚
さと半田付けした基板基材(フレキシブル基板15、リ
ジッド基板16)の厚さの合計で、非常に薄くなってい
る。The amount of protrusion from the MR section is the maximum, and the soldering is the sum of the thickness of 17 and the thickness of the soldered board base material (flexible board 15, rigid board 16), which is extremely thin.
また半田付けされた基板15.16の半田付は部補強用
として、基板15.16の片側たけに補強用エポキシ樹
脂IEI塗布している。樹脂18の量は、従来のように
各1本つつ半田付けされたリード線4の補強用と違って
極く少量で済む。そして樹脂18の厚さは、MRチップ
の厚さ以内に押えることが可能であり、薄型構造を損わ
ずにその補強の役目を果たしている0
なお、実施例ではMRチップの保持基板としてガラス基
板11′f:用いたが、シリコン、アルミナ、フェライ
ト等によ2ても同様の薄型構造が可能である0
〈発明の効果〉
以上のように本発明は簡単な構造で、MR都からの飛び
出し量を押えた有用なMRセンサが提供できる0Further, in order to reinforce the soldered parts of the soldered boards 15 and 16, reinforcing epoxy resin IEI is applied to only one side of the boards 15 and 16. The amount of resin 18 required is extremely small, unlike the conventional method for reinforcing each lead wire 4, which is soldered one by one. The thickness of the resin 18 can be kept within the thickness of the MR chip, and plays the role of reinforcing the thin structure without damaging the thin structure. 11'f: was used, but a similar thin structure is also possible using silicon, alumina, ferrite, etc.0 <Effects of the Invention> As described above, the present invention has a simple structure and is suitable for jumping out from MR cities. We can provide a useful MR sensor with a reduced amount.
第1図は従来構造を示す断面図、第2図は本発明の一実
施例の構造例を示す断面図、第3図は本発明の他の実施
例の構造例を示す断面図であるOll・・・ガラス基板
、12・・・強磁性体磁気抵抗薄膜、15・・・フレキ
シブル基板、16・・・リジッド基板、17・・・半田
付は部、18・・・補強用エポキシ樹脂。
代理人 弁理士 福 士 愛 彦 (他2名)第1図
第2図
〃
第3図Fig. 1 is a sectional view showing a conventional structure, Fig. 2 is a sectional view showing a structural example of an embodiment of the present invention, and Fig. 3 is a sectional view showing a structural example of another embodiment of the present invention. . . . Glass substrate, 12 . . . Ferromagnetic magnetoresistive thin film, 15 . . . Flexible substrate, 16 . Agent Patent attorney Aihiko Fukushi (2 others) Figure 1 Figure 2 Figure 3
Claims (1)
チップと、予じめ配線パターンを形成している外部配線
用基板とを直接半田付けし、前記外部配線用基板の片側
だけに半田付は部補強用樹脂を塗布してなることを特徴
とする強磁性体薄膜磁気抵抗センサ0■, M'R with a ferromagnetic magnetoresistive thin film formed on the holding substrate
The chip is directly soldered to an external wiring board on which a wiring pattern has been formed in advance, and a reinforcing resin is applied to only one side of the external wiring board before soldering. Ferromagnetic thin film magnetoresistive sensor 0
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58232052A JPS60123782A (en) | 1983-12-07 | 1983-12-07 | Ferromagnetic thin film magnetic resistance sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58232052A JPS60123782A (en) | 1983-12-07 | 1983-12-07 | Ferromagnetic thin film magnetic resistance sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60123782A true JPS60123782A (en) | 1985-07-02 |
JPH0322950B2 JPH0322950B2 (en) | 1991-03-27 |
Family
ID=16933211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58232052A Granted JPS60123782A (en) | 1983-12-07 | 1983-12-07 | Ferromagnetic thin film magnetic resistance sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60123782A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0861768A (en) * | 1994-08-11 | 1996-03-08 | Samsung Electronics Co Ltd | Wind-direction adjustment device of air conditioning equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58154478U (en) * | 1982-04-07 | 1983-10-15 | シャープ株式会社 | magnetic sensor |
-
1983
- 1983-12-07 JP JP58232052A patent/JPS60123782A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58154478U (en) * | 1982-04-07 | 1983-10-15 | シャープ株式会社 | magnetic sensor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0861768A (en) * | 1994-08-11 | 1996-03-08 | Samsung Electronics Co Ltd | Wind-direction adjustment device of air conditioning equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH0322950B2 (en) | 1991-03-27 |
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