JPS60117682A - Amorphous si solar battery - Google Patents
Amorphous si solar batteryInfo
- Publication number
- JPS60117682A JPS60117682A JP58224109A JP22410983A JPS60117682A JP S60117682 A JPS60117682 A JP S60117682A JP 58224109 A JP58224109 A JP 58224109A JP 22410983 A JP22410983 A JP 22410983A JP S60117682 A JPS60117682 A JP S60117682A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- amorphous silicon
- electrodes
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 14
- 239000010935 stainless steel Substances 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000002952 polymeric resin Substances 0.000 claims description 17
- 229920003002 synthetic resin Polymers 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 238000009413 insulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は非晶質シリコン太陽電池、特に可撓性基板を用
いた非晶質シリコン太陽電池に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an amorphous silicon solar cell, particularly an amorphous silicon solar cell using a flexible substrate.
一般に、非晶質シリコンからなる太陽電池の基板として
は、透光性ガラス板もしくはステンレス板材が、多くの
優れた特徴を有していることから近年ではその主流とな
っている。一方、非晶質シリコンを用いた太陽電池祉セ
ル１個当シで螢光打丁で得られる開放電圧が約０．７ｖ
前後であシ、この太陽電池を例えば電卓等の電源として
用いた場合、少なくとも３個以上のセルを直列接続する
必要がある。通常、基板としてガラス板を用いた場合は
、表面が平滑であシ、かつ十分な絶縁性を有しているた
め、仁のガラス基板上に直列接続構造の太陽電池を形成
することは極めて容易である。In general, as substrates for solar cells made of amorphous silicon, translucent glass plates or stainless steel plates have become mainstream in recent years because they have many excellent features. On the other hand, the open-circuit voltage obtained with a fluorescent knife for one solar cell using amorphous silicon is about 0.7V.
If this solar cell is used as a power source for a calculator or the like, it is necessary to connect at least three or more cells in series. Normally, when a glass plate is used as a substrate, the surface is smooth and has sufficient insulation properties, so it is extremely easy to form a solar cell with a series connection structure on a solid glass substrate. It is.
しかしながら、最近では可撓性基板を用いた太陽電池の
要求が高まシ、この場合、上述したガラス基板の使用は
不可能である。そこで、可撓性基板としてステンレスフ
ィルムや耐熱性樹脂膜を用いた非晶質シリフン太陽電池
が提案されているが、両者とも良好な太陽電池の特性を
得るのに十分な表面平滑度を得ることは難かしく、ステ
ンレスフィルムの場合は、さらに基板表面の絶縁が必要
となる。However, recently there has been an increasing demand for solar cells using flexible substrates, and in this case it is impossible to use the above-mentioned glass substrate. Therefore, amorphous silicon solar cells using stainless steel films or heat-resistant resin films as flexible substrates have been proposed, but both require sufficient surface smoothness to obtain good solar cell characteristics. This is difficult, and in the case of stainless steel film, additional insulation of the substrate surface is required.
この対策として、既に発明者らは、可撓性かつ耐熱性を
有する基板上に高分子樹脂膜を形成し、この樹脂膜上に
電極および非晶質シリコン膜を形成することによって、
表面平滑度および絶縁性を向上させた非晶質シリコン太
陽電池を提案している０
しかしながら、このような構成による非晶質シリコン太
陽電池において、基板上に形成される高分子樹脂膜は、
一般に信頼性に乏しく、特に耐湿性に問題があった。す
なわち前記処理を施した基板上に電極および非晶質シリ
コン膜のみを形成しただけでは、長時間の経過によシ、
高分子樹脂膜が吸湿して電極裏面を酸化させたり、電極
を剥離させたシして太陽電池の電気的特性が劣化すると
いう欠点があった。As a countermeasure for this, the inventors have already formed a polymer resin film on a flexible and heat-resistant substrate, and formed electrodes and an amorphous silicon film on this resin film.
We have proposed an amorphous silicon solar cell with improved surface smoothness and insulation.0 However, in an amorphous silicon solar cell with such a configuration, the polymer resin film formed on the substrate is
Generally, reliability was poor, and moisture resistance was particularly problematic. In other words, if only the electrodes and amorphous silicon film are formed on the substrate that has been subjected to the above-mentioned treatment, it will not work over time.
This method has the disadvantage that the polymer resin film absorbs moisture and oxidizes the back surface of the electrode, or the electrode peels off, resulting in deterioration of the electrical characteristics of the solar cell.
本発明は、このような事情に鑑みてなされたものであシ
、その目的は、可撓性基板を用い、しかもその上に形成
される電極の酸化、剥離等の発生を防止して電気的特性
の経時劣化を有効に抑制することが可能な非晶質シリコ
ン太陽電池を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to prevent the occurrence of oxidation, peeling, etc. of the electrodes formed on the flexible substrate, and to improve electrical conductivity. An object of the present invention is to provide an amorphous silicon solar cell that can effectively suppress deterioration of characteristics over time.
このような目的を達成するために、本発明は、可撓性か
つ耐熱性を有する基板上にシリコンと炭素の化合物から
なる絶縁膜を形成し、この膜上に電極および非晶質シリ
コン膜を形成したものである。以下、実施例を用いて本
発明の詳細な説明する。In order to achieve such an object, the present invention forms an insulating film made of a compound of silicon and carbon on a flexible and heat-resistant substrate, and forms electrodes and an amorphous silicon film on this film. It was formed. Hereinafter, the present invention will be explained in detail using Examples.
第１図は本発明の一実施例を示す要部平面図、第２図は
その断面図である。図において、可撓性かつ耐熱性を有
する例えば板厚的１００μｍのステンレス基板１０表面
を、表面粗さが約０．１μｍ以下となる程度に研磨する
。次に研磨されたステンレス基板１の上面に耐熱性を有
する例えばポリイミド樹脂などの高分子樹脂膜２を厚さ
約５μｍ程度に形成する。この場合、膜形成方法として
は、液状の樹脂をスピンナー、スプレーもしくはディッ
プ法によシ一様に塗布し、これを約３５０℃の高温で焼
成する。FIG. 1 is a plan view of a main part showing an embodiment of the present invention, and FIG. 2 is a sectional view thereof. In the figure, the surface of a stainless steel substrate 10, which is flexible and heat resistant and has a thickness of, for example, 100 μm, is polished to a surface roughness of about 0.1 μm or less. Next, on the top surface of the polished stainless steel substrate 1, a heat-resistant polymer resin film 2 made of, for example, polyimide resin is formed to a thickness of about 5 μm. In this case, the film is formed by uniformly applying a liquid resin using a spinner, spraying, or dipping method, and baking it at a high temperature of about 350°C.
このようにして樹脂膜２が形成されたステンレス基板１
上に、シリコ／に炭素を添加して電気抵抗を増大させて
なるＳｉＣターゲットをスパッタする。その際、ＳｉＣ
ターゲットに含まれる炭素の量は、５％以下では十分な
効果が得られず、５０％を越えると高分子樹脂膜２との
接着力が低下するため、５〜５０チの範囲が適尚である
。これによシ、膜厚約ｚｏｏｏＸ程度で高分子樹脂膜２
との接着性の良好な炭化ケイ素膜３を形成する。Stainless steel substrate 1 with resin film 2 formed in this way
On top of this, a SiC target made by adding carbon to silicone to increase its electrical resistance is sputtered. At that time, SiC
If the amount of carbon contained in the target is less than 5%, a sufficient effect will not be obtained, and if it exceeds 50%, the adhesive force with the polymer resin film 2 will decrease, so a range of 5 to 50 inches is appropriate. be. With this, the polymer resin film 2 is formed with a film thickness of about zooooX.
A silicon carbide film 3 with good adhesion to the substrate is formed.
次いでこの炭化ケイ素膜３上にステンレスをスパッタし
て膜厚約２０００Ｘ程度の下部電極４ａＨ４ｂｅ４ｎ、
４ｔ１．４’ａをそれぞれ所９間隔幅〒形成する。Next, stainless steel is sputtered onto the silicon carbide film 3 to form a lower electrode 4aH4be4n with a film thickness of about 2000X.
4t1.4'a are each formed with a width of 9 intervals.
次にこれらの各下部電極４ｍ＋４ｂ＋４ｃ＋４ｄ＋４＠
が形成された炭化ケイ素膜３上にプラズマＣＶＤ法によ
シ、基板１の温度約２５０℃でｐ、１．ｎまたはｎ。Next, each of these lower electrodes 4m+4b+4c+4d+4@
The silicon carbide film 3 formed with p, 1. n or n.
ｔ、ｐの順に光電変換用の非晶質シリコン膜５を形成し
、さらに前記各下部電極４ａ、４ｂ＋４ｅ＋４ｔｉ＋４
ａと対向する非晶質シリコン膜５に社、相互に隣接する
各下部電極４ｂ＋４ｃ、４ｄ＋４ｅ上の一端にまたがっ
てＩｎ、０３− ＳｎＯ□を約５ｏｏＸの厚さにスパッ
タリングして透光性上部電極６ｍ、６ｂ＋６ｅ＋６ｄ＋
６・をそれぞれ被着形成する。最後にこれらの上部電極
６ａ＋６ｂ＋６ｃ＋６ｄｅ６＊上にｓ、ｉｏ□を約２０
００Ａの厚すニスパッタリングしてパッシベーションと
してのｓｉｏ、膜７を被着形成し、５個直列接続された
非晶質シリコン太陽電池を完成した。この場合、５個の
非晶質シリコン太陽電池の相互の接続は各上部電極６ａ
＋６ｂ、６ｃ、６ａ＋６ｅの電極パターンの形成と同時
に形成され、また、上部電極６ａの一端部と下部電極４
ｅの一端部には出力電圧取り出し用の端子６ｍ 、 ４
＠ がそれぞれ形成されている。An amorphous silicon film 5 for photoelectric conversion is formed in the order of t and p, and each of the lower electrodes 4a, 4b+4e+4ti+4
A transparent upper electrode is formed by sputtering In, 03-SnO□ to a thickness of about 50X across one end of each of the mutually adjacent lower electrodes 4b+4c and 4d+4e on the amorphous silicon film 5 facing the a. 6m, 6b+6e+6d+
6. are respectively deposited and formed. Finally, apply approximately 20 s, io□ on these upper electrodes 6a+6b+6c+6de6*.
A film 7 of SIO as passivation was deposited by sputtering to a thickness of 00A to complete five amorphous silicon solar cells connected in series. In this case, the five amorphous silicon solar cells are interconnected through each upper electrode 6a.
+6b, 6c, 6a+6e are formed simultaneously with the formation of the electrode patterns, and one end of the upper electrode 6a and the lower electrode 4
At one end of e, there is a terminal 6m, 4 for taking out the output voltage.
@ is formed respectively.
このように構成された非晶質シリコン太陽電池において
、ステンレス基板１の上面を研磨してその表面に耐熱性
を有する高分子樹脂膜２ｆｉ−設け、さらにこの高分子
樹脂膜２の表面に炭化ケイ素膜３を設けたことによシ、
各電極間のリークに起因する特性劣化を抑止できるばか
シでなく、炭化ケイ素膜３は、高分子樹脂膜２上に緻密
に密着されるので、太陽電池の基板として十分な平面平
滑度が得られ、かつ高分子樹脂膜２と各下部電極４ａ〜
４ｅとの間を湿度から完全に遮断して絶縁することがで
きるので、約２００ Ｌｕｘの螢光打丁において、約３
．３ｖの開放電圧と約１８μＡの短絡電流が得られた。In the amorphous silicon solar cell constructed in this way, the upper surface of the stainless steel substrate 1 is polished and a heat-resistant polymer resin film 2fi is provided on the surface, and silicon carbide is further applied to the surface of the polymer resin film 2. By providing the membrane 3,
In addition to suppressing characteristic deterioration caused by leakage between each electrode, the silicon carbide film 3 is tightly adhered to the polymer resin film 2, so that it has sufficient planar smoothness as a substrate for a solar cell. and the polymer resin film 2 and each lower electrode 4a~
4e can be completely insulated from humidity, so in a fluorescent knife of about 200 Lux, about 3
．． An open circuit voltage of 3 V and a short circuit current of about 18 μA were obtained.
なお、この場合、セル１個（受光面積ｌ ｃｒ＆）当）
の開放電圧は約０．６６Ｖであ夛、セル間の絶縁不良は
全く生じなかった。また、高分子樹脂膜２上に炭化ケイ
素膜３を設けたことによシ、温度約７０℃、相対温度約
９５チで約１０００時間以上の耐湿試験においても下部
電極４ａ〜４ｅの酸化、剥離等の発生が皆無となシ、電
気的特性の劣化も全く発生しなかった。In this case, one cell (light receiving area l cr&))
The open circuit voltage was approximately 0.66 V, and no insulation defects occurred between the cells. Furthermore, since the silicon carbide film 3 is provided on the polymer resin film 2, the lower electrodes 4a to 4e are not oxidized or peeled off even in a humidity test of about 1000 hours or more at a temperature of about 70°C and a relative temperature of about 95°C. No deterioration of electrical characteristics occurred.
なお、炭化ケイ素膜３の形成方法はスパッタリング法に
限定されるものではなく、プラズマＣＶＤ法でもよいが
、スパッタリング法の方が基板加熱を必要とせず、しか
も安定性、安全性に優れている。また、膜厚も２０００
Ｘに限定されるものではなく、＃１ぼ２００μｍ５μ
ｍの範囲に形成すればよい。Note that the method for forming silicon carbide film 3 is not limited to the sputtering method, and may also be a plasma CVD method, but the sputtering method does not require substrate heating and is superior in stability and safety. Also, the film thickness is 2000
Not limited to X, #1 is 200μm5μ
It may be formed within the range of m.
この場合、２００＾未満では十分な耐湿性が得られず、
また５μｍを越えるようになると厚くなるのみで無意味
である。耐湿性を十分に満足しかつ生産性が良いという
点を考慮すると、上述した２０００Ｘ程度が最適である
。In this case, if it is less than 200^, sufficient moisture resistance cannot be obtained,
Moreover, if it exceeds 5 μm, it will only become thicker and is meaningless. Considering that it satisfies moisture resistance and has good productivity, the above-mentioned 2000X or so is optimal.
また、前記実施例において、非晶質シリコン膜を形成す
る可撓性かつ耐熱性を有する基板として板厚約１００μ
ｍのステンレス基板を用いた場合について説明したが、
本発明はこれに限定されるものではなく、このステンレ
ス基板の代シに板厚約１００μｍの金属基板、または例
えばポリイミド系のカプトン（商品名）を用いた場合に
おいても全く同様の効果が得られた。また、これらの基
板の厚さも特に１００μｍに限定されるものではない。In the above embodiment, the flexible and heat-resistant substrate on which the amorphous silicon film is formed has a thickness of about 100 μm.
We explained the case using a stainless steel substrate of m.
The present invention is not limited to this, and the same effect can be obtained even when a metal substrate with a thickness of about 100 μm or polyimide Kapton (trade name), for example, is used in place of the stainless steel substrate. Ta. Further, the thickness of these substrates is not particularly limited to 100 μm.
さらに、前記実施例において、基板上に形成する高分子
樹脂膜は、約５μｍの厚さに形成した場合について説明
したが、との膜厚は基板の板厚によっても異なるので、
概略０．１〜１００μｍの範囲で形成すれば良い。この
場合、膜厚は０．１μｍ以下では絶縁性が得られず、１
００μｍ以上となると、折シ曲げたときに膜剥れが生じ
ることから、この膜厚は０．１〜１００μｍの範囲が良
く、さらには、膜特性、生産性等の点から考慮して２〜
１０μｍの範囲が最適である。Furthermore, in the above embodiment, the polymer resin film formed on the substrate was described as having a thickness of about 5 μm, but the film thickness varies depending on the thickness of the substrate.
The thickness may be approximately 0.1 to 100 μm. In this case, if the film thickness is less than 0.1 μm, insulation cannot be obtained;
If the thickness exceeds 0.00 μm, the film will peel off when it is bent, so the film thickness should preferably be in the range of 0.1 to 100 μm.
A range of 10 μm is optimal.
以上説明したように本発明によれば、光電変換用の非晶
質シリコン膜、電極を形成する可撓性かつ耐熱性を有す
る基板上に、シリコンと炭素の化合物からなる絶縁膜を
設けたことによシ、電極の酸化、剥離等の発生が皆無と
なシミ極間のリークによる特性劣化を抑制することがで
きるので、信頼性の高い、高品質、高性能の非晶質シリ
コン太陽電池が得られるという極めて優れた効果を有す
る０As explained above, according to the present invention, an insulating film made of a compound of silicon and carbon is provided on a flexible and heat-resistant substrate forming an amorphous silicon film and an electrode for photoelectric conversion. There is no occurrence of damage, electrode oxidation, peeling, etc., and characteristic deterioration due to leakage between electrodes can be suppressed, making highly reliable, high-quality, and high-performance amorphous silicon solar cells possible. 0, which has an extremely excellent effect of being obtained.
第１図は本発明による非晶質シリコン太陽電池の一例を
示す一部ば断平面図、第２図はそのＡ −Ａ線に沿う断
面図である。
１・・・・ステンレス基板、２・・・・高分子樹脂膜、
３・・・・炭化ケイ素膜、４ｍ＋４ｂ＋４ｃ＋４ｄ＋４
ａ・・・拳下部電極、４ｅＩＩＩＩ・・端子、５＠１１
１１１１非晶質シリコン膜、６ａ＋６ｂ＋６ｃ＋６ｄ＋
６ｅ・・φ・上部電極、６ｍ・・・・端子、Ｔ・・・・
５ｔＯ２膜。FIG. 1 is a partially sectional plan view showing an example of an amorphous silicon solar cell according to the present invention, and FIG. 2 is a sectional view taken along the line A-A. 1...Stainless steel substrate, 2...Polymer resin film,
3...Silicon carbide film, 4m+4b+4c+4d+4
a... lower fist electrode, 4eIII... terminal, 5@11
1111 amorphous silicon film, 6a+6b+6c+6d+
6e...φ・Top electrode, 6m...Terminal, T...
5tO2 membrane.
Claims (1)
成された下部電極と、前記下部電極上に形成された光電
変換用の非晶質シリコン膜と、前記非晶質シリコン膜上
に形成された上部電極とを少なくとも備えた非晶質シリ
コン太陽電池において、前記基板と前記下部電極との間
に、シリコンと炭素の化合物からなる絶縁膜を設けたこ
とを特徴とする非晶質シリコン太陽電池。 ２、前記基板を、表面に高分子樹脂膜を有するステンレ
ス板としたことを特徴とする特許請求の範囲第１項記載
の非晶質シリコン太陽電池。 ３、前記基板を、高分子樹脂板としたことを特徴とする
特許請求の範囲第１項記載の非晶質シリコン太陽電池。 ４、前記基板を、表面に高分子樹脂膜を有する高分子樹
脂板としたことを特徴とする特許請求の範囲第１項記載
の非晶質シリコン太陽電池。[Scope of Claims] 1. A flexible and heat-resistant substrate; a lower electrode formed on the substrate; an amorphous silicon film for photoelectric conversion formed on the lower electrode; In an amorphous silicon solar cell comprising at least an upper electrode formed on an amorphous silicon film, an insulating film made of a compound of silicon and carbon is provided between the substrate and the lower electrode. Characteristics of amorphous silicon solar cells. 2. The amorphous silicon solar cell according to claim 1, wherein the substrate is a stainless steel plate having a polymer resin film on its surface. 3. The amorphous silicon solar cell according to claim 1, wherein the substrate is a polymer resin plate. 4. The amorphous silicon solar cell according to claim 1, wherein the substrate is a polymer resin plate having a polymer resin film on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224109A JPS60117682A (en) | 1983-11-30 | 1983-11-30 | Amorphous si solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224109A JPS60117682A (en) | 1983-11-30 | 1983-11-30 | Amorphous si solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60117682A true JPS60117682A (en) | 1985-06-25 |
Family
ID=16808671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58224109A Pending JPS60117682A (en) | 1983-11-30 | 1983-11-30 | Amorphous si solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117682A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10934172B2 (en) * | 2011-04-21 | 2021-03-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | In situ grown SiC coatings on carbon materials |
-
1983
- 1983-11-30 JP JP58224109A patent/JPS60117682A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10934172B2 (en) * | 2011-04-21 | 2021-03-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | In situ grown SiC coatings on carbon materials |
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