JPH08181339A - Flexible solar cell module - Google Patents

Flexible solar cell module

Info

Publication number
JPH08181339A
JPH08181339A JP6317853A JP31785394A JPH08181339A JP H08181339 A JPH08181339 A JP H08181339A JP 6317853 A JP6317853 A JP 6317853A JP 31785394 A JP31785394 A JP 31785394A JP H08181339 A JPH08181339 A JP H08181339A
Authority
JP
Japan
Prior art keywords
film
thin film
solar cell
photoelectric conversion
cell module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6317853A
Other languages
Japanese (ja)
Other versions
JP3076895B2 (en
Inventor
Shinji Kato
進二 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP06317853A priority Critical patent/JP3076895B2/en
Publication of JPH08181339A publication Critical patent/JPH08181339A/en
Application granted granted Critical
Publication of JP3076895B2 publication Critical patent/JP3076895B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To provide a solar cell which is excellent in weatherability, thermal resistance, water resistance and moisture resistance by forming a weatherable protective film which covers a thin film optical conversion device formed on a flexible board with an inorganic insulation layer which is small in vapor permeability and low in cost inside and an organic insulation film outside. CONSTITUTION: A reflective electrode layer 4, a photoelectric conversion layer 3 and a transparent electrode layer 2 are laminated one after another on one surface of an insulated film 1 of a base material, thereby forming a thin film photoelectric conversion device having a serial connection structure. The front surface and the side surfaces of the conversion device is covered with a transparent and insulating thin film 5. The rear surface and the side surfaces of the film 1 are covered with a low cost inorganic insulating thin film 7 which is small vapor permeability, but the formation surfaces of the terminal electrode layers 61 and 62 are excluded. The terminal electrodes 61 and 62 are connected with a lead wire and then a terminal 10 on the end of the lead wire is exposed so that it may be covered with the organic insulation film 9. This construction makes it possible to provide a low cost solar cell module which is excellent in weatherability and thermal resistance and moisture resistance without degrading flexibility.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、可撓性の絶縁性基板上
に薄膜からなる光電変換層を電極層と共に形成した薄膜
光電変換素子を複数個用いた可撓性太陽電池モジュール
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible solar cell module using a plurality of thin film photoelectric conversion elements each having a thin film photoelectric conversion layer formed on a flexible insulating substrate together with an electrode layer.

【0002】[0002]

【従来の技術】一般的な薄膜太陽電池モジュールは、透
明絶縁性基材上に透明電極、光電変換層、反射金属電極
を順次積層してなる直列接続構造を有する薄膜光電変換
素子複数個を相互に接続して耐候性フィルムを絶縁性接
着樹脂を用いて接着封止させたものである。透明絶縁性
基材にガラス板を用いた場合、可撓性は有しないもの
の、基材自体が化学的に安定で耐水性、耐湿性、耐熱性
等の耐候性に優れていることから、図3に示すように、
ガラス基板11面を光入射側として透明電極層2、光電
変換層3、反射電極層4を順次積層して光電変換素子を
形成し、素子形成面側のみ耐候性に優れた内部に金属箔
を有する耐候性フィルム13等を絶縁性封止材12にて
接着すればよかった。基材にステンレス鋼板のような透
光性でなく導電性基板を用いた場合には、光入射側と反
対面が化学的に安定な基材となり、例えば図4に示すよ
うに、ステンレス鋼基板14の上に反射電極層4、光電
変換層3、透明電極層2を順次積層して光電変換素子を
形成し、光入射側にふっ素樹脂よりなる透光性耐候性フ
ィルム15を透光性の絶縁封止材16にて接着してモジ
ュール耐候性の向上をはかっている。
2. Description of the Related Art A general thin film solar cell module includes a plurality of thin film photoelectric conversion elements having a serial connection structure in which a transparent electrode, a photoelectric conversion layer, and a reflective metal electrode are sequentially laminated on a transparent insulating substrate. And the weather resistant film is adhesively sealed with an insulating adhesive resin. When a glass plate is used as a transparent insulating base material, although it does not have flexibility, the base material itself is chemically stable and has excellent weather resistance such as water resistance, moisture resistance, and heat resistance. As shown in 3,
A transparent electrode layer 2, a photoelectric conversion layer 3, and a reflective electrode layer 4 are sequentially laminated with the surface of the glass substrate 11 as a light incident side to form a photoelectric conversion element, and a metal foil is formed inside the element formation surface side and has excellent weather resistance. It suffices to bond the weather resistant film 13 and the like that it has with the insulating sealing material 12. When a conductive substrate that is not translucent, such as a stainless steel plate, is used as the base material, the surface opposite to the light incident side becomes a chemically stable base material. For example, as shown in FIG. A reflective electrode layer 4, a photoelectric conversion layer 3, and a transparent electrode layer 2 are sequentially laminated on 14 to form a photoelectric conversion element, and a light-transmitting and weather-resistant film 15 made of a fluororesin is formed on the light-incident side. The insulating sealing material 16 adheres to improve the weather resistance of the module.

【0003】絶縁性基材として可撓性に富んだ透明樹脂
フィルム17を用いた場合、基材自体の耐候性がガラス
やステンレスと比較して極端に劣ることから、図5に示
すように図3と同様の構成の光電変換素子を形成した基
材の光入射側をふっ素系樹脂フィルム15で、また、反
対面は金属箔入り耐候性フィルム13で覆ってモジュー
ルとしている。光電変換素子が透明電極層2を図4のよ
うな基材から遠い側に形成する構造の場合も両面を耐候
性フィルムで覆う必要があることは同様である。
When the transparent resin film 17 having high flexibility is used as the insulating base material, the weather resistance of the base material itself is extremely inferior to that of glass or stainless steel. Therefore, as shown in FIG. The substrate on which the photoelectric conversion element having the same structure as that of No. 3 is formed is covered with a fluorine resin film 15 on the light incident side, and the opposite surface is covered with a weather resistant film 13 containing a metal foil to form a module. Similarly, in the case where the photoelectric conversion element has a structure in which the transparent electrode layer 2 is formed on the side far from the base material as shown in FIG. 4, both surfaces need to be covered with a weather resistant film.

【0004】[0004]

【発明が解決しようとする課題】図4のように、両面を
高価なふっ素樹脂フィルムや金属箔入り耐候性フィルム
を用いた場合は、太陽電池モジュールの低コスト化を実
現することが困難であり、また可撓性が損なわれる問題
がある。価格の低いフィルムで両面を覆うと、耐熱性、
耐水性、耐湿性が十分でなく、水蒸気の透過を完全に押
さえることができない。
As shown in FIG. 4, when an expensive fluororesin film or a metal foil-containing weather resistant film is used on both sides, it is difficult to reduce the cost of the solar cell module. In addition, there is a problem that flexibility is impaired. If you cover both sides with a low cost film, heat resistance,
Water resistance and moisture resistance are not sufficient, and permeation of water vapor cannot be completely suppressed.

【0005】本発明の目的は、上記の問題を解決し、高
性能で高い信頼性を有しながら低コストの可撓性太陽電
池モジュールを提供することにある。
An object of the present invention is to solve the above-mentioned problems and to provide a flexible solar cell module which has high performance and high reliability while being low in cost.

【0006】[0006]

【課題を解決するための手段】上述の目的を達成するた
めに、本発明は、可撓性の絶縁性基板上に互いに接続さ
れる複数の薄膜光電変換素子が形成され、両面が端子部
を除いて少なくとも光入射側が透光性がある耐候性の保
護被膜により覆われた可撓性太陽電池モジュールにおい
て、保護被膜が光電変換素子あるいは基板に近い側が無
機系絶縁性薄膜よりなり、外気に接する側が有機系の絶
縁層よりなるものとする。光入射側の無機系絶縁性薄膜
がSiOx 、SiNx およびSiOx Ny のいずれかよ
りなり、xあるいはx+yの値が1以上であることが良
い。反光入射側の絶縁性薄膜がSi、Ti、Taおよび
Alの酸化物および窒化物のいずれかよりなることが良
い。光電変換素子側を覆う無機系絶縁性薄膜の厚さが3
0〜150nmであることが良い。そして、有機系の絶
縁層がシリコーン系、ポリイミド系、ポリイミドアミド
系およびふっ素系のいずれかの樹脂よりなることが良
い。
In order to achieve the above-mentioned object, the present invention provides a plurality of thin film photoelectric conversion elements connected to each other on a flexible insulating substrate, both surfaces of which have terminal portions. Except for at least the light incident side, in a flexible solar cell module covered with a translucent weatherproof protective coating, the protective coating is made of an inorganic insulating thin film on the side close to the photoelectric conversion element or the substrate, and is exposed to the outside air The side is made of an organic insulating layer. It is preferable that the inorganic insulating thin film on the light incident side is made of any one of SiOx, SiNx and SiOxNy, and the value of x or x + y is 1 or more. It is preferable that the insulating thin film on the side opposite to the incident light is made of any one of oxides and nitrides of Si, Ti, Ta and Al. The thickness of the inorganic insulating thin film covering the photoelectric conversion element side is 3
It is preferably 0 to 150 nm. The organic insulating layer is preferably made of any one of silicone, polyimide, polyimideamide, and fluorine resins.

【0007】[0007]

【作用】無機系の絶縁性薄膜は、水蒸気透過率が低くし
かも低価格である。これと表面の平滑性が得やすい有機
系の絶縁層を併用することにより、耐熱性、耐水性、耐
湿性の優れた保護膜被膜が得られる。光の入射側の透光
性の絶縁性被膜にSiOx 、SiNx あるいはSiOx
Ny を用いる場合、膜中の酸素あるいは窒素の減少に伴
い、可視光、特に300〜500nmの波長の光の吸収
が生じることから、xあるいはx+yの値が1以上であ
ることが望ましい。透光性の必要のない絶縁性被膜には
Si、Ti、TaおよびAlの酸化物および窒化物のい
ずれかが用いられるが、透光性であるか否かに限らず、
光電変換素子側を覆う無機系絶縁性薄膜の水蒸気透過率
は膜厚が厚い方がよいが、素子に働く応力は膜厚が厚く
なると大きくなるので、厚さは30〜150nmの範囲
にあることが適している。表面を覆う有機系絶縁物には
耐候性の良いシリコーン系、ポリイミド系、ポリイミド
アミド系あるいはふっ素系の樹脂などを用いる。
The inorganic insulating thin film has a low water vapor permeability and a low price. By using this together with an organic insulating layer which is easy to obtain surface smoothness, a protective film coating having excellent heat resistance, water resistance and moisture resistance can be obtained. SiOx, SiNx or SiOx is applied to the translucent insulating film on the light incident side.
When Ny is used, it is desirable that the value of x or x + y is 1 or more, because visible light, particularly light having a wavelength of 300 to 500 nm is absorbed as oxygen or nitrogen in the film decreases. Any of oxides or nitrides of Si, Ti, Ta, and Al is used for the insulating film that does not need to have a light-transmitting property.
The water vapor permeability of the inorganic insulating thin film covering the photoelectric conversion element side should be thicker, but the stress acting on the element increases as the film thickness increases, so the thickness should be in the range of 30 to 150 nm. Is suitable. As the organic insulating material covering the surface, a silicone-based, polyimide-based, polyimideamide-based, or fluorine-based resin having good weather resistance is used.

【0008】[0008]

【実施例】以下、図3ないし図5と共通の部分に同一の
符号を付した図を引用して本発明の実施例について述べ
る。図1および図2に本発明の一実施例の太陽電池モジ
ュールの横断面図および縦断面図を示し、基材の絶縁性
フィルム1の一面上に反射電極層4、光電変換層3、透
明電極層4を順次積層した直列接続構造を有する薄膜光
電変換素子が形成されている。この素子の表面および側
面は透明絶縁性薄膜5により覆われている。フィルム2
の他面上には、薄膜光電変換素子の両端にプラス端子電
極61とマイナス端子電極62が形成されている。端子
電極層61、62形成面以外のフィルム1の裏面および
側面は、絶縁性薄膜7により覆われている。この絶縁性
薄膜7は図示のように端子電極層61、62を全部露出
させてもよく、一部を覆ってもよい。透明絶縁性薄膜5
および絶縁性薄膜7で覆われた複数の光電変換素子は、
端子電極61、62をそれぞれリード線8で接続したの
ち、リード線の端部の端子10を露出させて有機系絶縁
膜9で被覆される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to the drawings in which the same parts as those in FIGS. 1 and 2 are a horizontal cross-sectional view and a vertical cross-sectional view of a solar cell module according to an embodiment of the present invention, in which a reflective electrode layer 4, a photoelectric conversion layer 3, and a transparent electrode are provided on one surface of an insulating film 1 as a base material. A thin film photoelectric conversion element having a series connection structure in which layers 4 are sequentially stacked is formed. The surface and side surfaces of this element are covered with a transparent insulating thin film 5. Film 2
On the other surface, a positive terminal electrode 61 and a negative terminal electrode 62 are formed at both ends of the thin film photoelectric conversion element. The back surface and side surfaces of the film 1 other than the surface on which the terminal electrode layers 61 and 62 are formed are covered with the insulating thin film 7. The insulating thin film 7 may expose the terminal electrode layers 61 and 62 entirely as shown in the drawing, or may cover a part thereof. Transparent insulating thin film 5
And the plurality of photoelectric conversion elements covered with the insulating thin film 7,
After connecting the terminal electrodes 61 and 62 with the lead wire 8, the terminal 10 at the end of the lead wire is exposed and covered with the organic insulating film 9.

【0009】透明絶縁性薄膜5は、無機物のSiOx 、
SiNx 、SiOx Nyなどを主成分とするものであ
り、スパッタ法により形成される。この薄膜5は光電変
換素子の光入射側からの水蒸気の侵入を防ぐ役割を果た
すのである。図6は水蒸気透過率が106g/m2 /d
ayと高いポリエーテルサルフォン (PES) 上に形成
したSiOx 膜の水蒸気透過率の膜厚依存性を示す。図
より明らかなように膜厚10nm以上で水蒸気透過率が
激減している。しかし、素子に働く応力は、絶縁性薄膜
の膜厚の増加にともない増加するので、絶縁性薄膜5の
膜厚は30〜150nm程度であることが望ましい。ま
た膜組成は、膜中の酸素あるいは窒素の減少に伴い、可
視光、特に300〜500nmの波長の光の吸収が生じ
ることから、膜がSiOx 、SiNx 、SiOx Nyか
らなるときはxあるいはx+yの値が1以上であること
が望ましい。
The transparent insulating thin film 5 is made of an inorganic substance such as SiOx,
The main component is SiNx, SiOx Ny, etc., and it is formed by the sputtering method. The thin film 5 plays a role of preventing invasion of water vapor from the light incident side of the photoelectric conversion element. FIG. 6 shows that the water vapor transmission rate is 106 g / m 2 / d.
ay and high shows the film thickness dependence of the water vapor permeability of the SiOx film formed on the polyether sulfone (PES). As is clear from the figure, the water vapor transmission rate is drastically reduced when the film thickness is 10 nm or more. However, since the stress acting on the element increases as the thickness of the insulating thin film increases, the thickness of the insulating thin film 5 is preferably about 30 to 150 nm. Further, since the film composition absorbs visible light, particularly light having a wavelength of 300 to 500 nm with a decrease in oxygen or nitrogen in the film, when the film is made of SiOx, SiNx, or SiOx Ny, x or x + y It is desirable that the value is 1 or more.

【0010】基材1の裏面側の絶縁性薄膜7は、透光性
の必要はなく、Si、Ti、Ta、Alの酸化膜あるい
は窒化膜であればよく、蒸着法、スパッタ法あるいはC
VD法で形成するかまたは塗布焼成して形成する。図で
は、端子電極層61、62が絶縁性薄膜7より突出して
いるが、逆に凹んでいてもよい。この無機系絶縁性薄膜
7は基材面側からの水蒸気の侵入を防ぐ役割を果たすも
ので、膜厚はSi系酸化膜であれば10nm以上形成す
ればよい。端子電極層61、62の露出は、リード線8
を用いて光電変換素子間の接続を行うために必要であ
り、絶縁膜7形成後にエッチングするか、あらかじめ剥
離可能なマスキングテープや処理液で表面を覆っておく
ことで露出させる。剥離テープ等を用いた場合、剥離に
伴うばりが生じるが有機系絶縁膜9で覆われるので素子
自体の特性や信頼性を損ねることは抑えられる。
The insulating thin film 7 on the back surface side of the base material 1 does not need to be translucent, and may be an oxide film or a nitride film of Si, Ti, Ta, Al, and may be a vapor deposition method, a sputtering method or a C method.
It is formed by the VD method or by coating and baking. Although the terminal electrode layers 61 and 62 project from the insulating thin film 7 in the figure, they may be recessed. The inorganic insulating thin film 7 plays a role of preventing the invasion of water vapor from the substrate surface side, and the film thickness may be 10 nm or more if it is a Si-based oxide film. The exposure of the terminal electrode layers 61 and 62 is performed by the lead wire 8
It is necessary to connect the photoelectric conversion elements by using, and it is exposed by etching after forming the insulating film 7 or by covering the surface with a masking tape or a treatment liquid that can be peeled in advance. When a peeling tape or the like is used, burrs are generated due to peeling, but since it is covered with the organic insulating film 9, it is possible to suppress deterioration of the characteristics and reliability of the element itself.

【0011】無機系絶縁膜6、7で覆われた複数の光電
変換素子をリード線8を用いて接続した後、エチレン酢
酸ビニル (EVA) フィルムでモジュールの端子10以
外の部分を覆い、ラミネートしたのち架橋して有機系絶
縁膜9を形成する。この絶縁膜9には、EVA以外にポ
リアミドイミド樹脂、ふっ素樹脂あるいはシリコーン樹
脂またはこれらの混合物を用いてもよく、塗布焼成する
ことによって形成する。
After connecting a plurality of photoelectric conversion elements covered with inorganic insulating films 6 and 7 using lead wires 8, a portion other than the terminals 10 of the module was covered with ethylene vinyl acetate (EVA) film and laminated. After that, the organic insulating film 9 is formed by crosslinking. Polyamideimide resin, fluorine resin, silicone resin, or a mixture thereof may be used for the insulating film 9 in addition to EVA, and is formed by coating and baking.

【0012】上記の実施例では、基材上に形成された薄
膜光電変換素子の上方から光が入射するが、透光性の基
材を用い、基材側から光を入射させる太陽電池モジュー
ルにも実施することができる。その場合は、フィルム1
の裏面の絶縁性薄膜7を透光性にし、素子の上を覆う絶
縁性薄膜5は透光性にする必要がない。
In the above embodiment, light is incident from above the thin film photoelectric conversion element formed on the base material. However, a translucent base material is used, and a solar cell module in which light is incident from the base material side is used. Can also be implemented. In that case, film 1
It is not necessary to make the insulating thin film 7 on the back surface of the device transparent and the insulating thin film 5 covering the element to be transparent.

【0013】[0013]

【発明の効果】本発明によれば、可撓性基板上に形成さ
れた薄膜光電変換素子を覆う耐候性の保護被膜を、内側
を水蒸気透過性が小さく、低価格の無機系絶縁性薄膜、
外側を有機系絶縁層により形成することにより、可撓性
を損なうことがなく、耐候性、耐熱性、耐水性および耐
湿性に優れた太陽電池モジュールを低コストで得ること
ができた。
According to the present invention, a weather-resistant protective coating for covering a thin film photoelectric conversion element formed on a flexible substrate is provided, which is a low-cost inorganic insulating thin film having a low water vapor permeability inside.
By forming the outer side with the organic insulating layer, it was possible to obtain a solar cell module excellent in weather resistance, heat resistance, water resistance and moisture resistance at low cost without impairing flexibility.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の可撓性太陽電池モジュール
の横断面図
FIG. 1 is a cross-sectional view of a flexible solar cell module according to an embodiment of the present invention.

【図2】図1の太陽電池モジュールの縦断面図FIG. 2 is a vertical cross-sectional view of the solar cell module shown in FIG.

【図3】従来の薄膜光電変換素子の一例の断面図FIG. 3 is a cross-sectional view of an example of a conventional thin film photoelectric conversion element.

【図4】従来の薄膜光電変換素子の他の例の断面図FIG. 4 is a cross-sectional view of another example of a conventional thin film photoelectric conversion element.

【図5】従来の薄膜光電変換素子のさらに別の例の断面
FIG. 5 is a cross-sectional view of still another example of a conventional thin film photoelectric conversion element.

【図6】SiOx 膜の水蒸気透過率と厚さとの関係線図FIG. 6 is a diagram showing the relationship between the water vapor transmission rate and the thickness of a SiOx film.

【符号の説明】[Explanation of symbols]

1 絶縁性フィルム 2 透明電極層 3 光電変換層 4 反射電極層 5 透明絶縁性薄膜 61 プラス端子電極層 62 マイナス端子電極層 7 絶縁性薄膜 8 リード線 9 絶縁膜 DESCRIPTION OF SYMBOLS 1 Insulating film 2 Transparent electrode layer 3 Photoelectric conversion layer 4 Reflective electrode layer 5 Transparent insulating thin film 61 Positive terminal electrode layer 62 Negative terminal electrode layer 7 Insulating thin film 8 Lead wire 9 Insulating film

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】可撓性の絶縁性基板上に互いに接続される
複数の薄膜光電変換素子が形成され、両面が端子部を除
いて少なくとも光入射側が透光性である耐候性の保護被
膜により覆われたものにおいて、保護被膜が光電変換素
子あるいは基板に近い側が無機系絶縁性薄膜よりなり、
外気に接する側が有機系の絶縁層よりなることを特徴と
する可撓性太陽電池モジュール。
1. A plurality of thin-film photoelectric conversion elements connected to each other are formed on a flexible insulating substrate, and a weather-resistant protective film is formed on both sides of which at least a light-incident side is translucent except a terminal portion. In the covered one, the protective coating is made of an inorganic insulating thin film on the side close to the photoelectric conversion element or the substrate,
A flexible solar cell module, characterized in that the side in contact with the outside air is composed of an organic insulating layer.
【請求項2】光入射側の無機系絶縁性薄膜がSiOx 、
SiNx およびSiOx Ny のいずれかよりなり、xあ
るいはx+yの値が1以上である請求項1記載の可撓性
太陽電池モジュール。
2. An inorganic insulating thin film on the light incident side is SiOx,
The flexible solar cell module according to claim 1, which is made of either SiNx or SiOxNy and has a value of x or x + y of 1 or more.
【請求項3】反光入射側の無機系絶縁性薄膜がSi、T
i、TaおよびAlの酸化物および窒化物のいずれかよ
りなる請求項1あるいは2記載の可撓性太陽電池モジュ
ール。
3. The inorganic insulating thin film on the side of incident light is Si, T
The flexible solar cell module according to claim 1 or 2, which is made of any one of oxides and nitrides of i, Ta and Al.
【請求項4】光電変換素子側を覆う無機系絶縁性薄膜の
厚さが30〜150nmである請求項1ないし3のいず
れかに記載の可撓性太陽電池モジュール。
4. The flexible solar cell module according to claim 1, wherein the inorganic insulating thin film covering the photoelectric conversion element side has a thickness of 30 to 150 nm.
【請求項5】有機系の絶縁層がシリコーン系、ポリイミ
ド系、ポリイミドアミド系およびふっ素系のいずれかの
樹脂よりなる請求項1ないし3のいずれかに記載の可撓
性太陽電池モジュール。
5. The flexible solar cell module according to claim 1, wherein the organic insulating layer is made of any one of silicone, polyimide, polyimideamide and fluorine resins.
JP06317853A 1994-12-21 1994-12-21 Flexible solar cell module Expired - Fee Related JP3076895B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06317853A JP3076895B2 (en) 1994-12-21 1994-12-21 Flexible solar cell module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06317853A JP3076895B2 (en) 1994-12-21 1994-12-21 Flexible solar cell module

Publications (2)

Publication Number Publication Date
JPH08181339A true JPH08181339A (en) 1996-07-12
JP3076895B2 JP3076895B2 (en) 2000-08-14

Family

ID=18092793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06317853A Expired - Fee Related JP3076895B2 (en) 1994-12-21 1994-12-21 Flexible solar cell module

Country Status (1)

Country Link
JP (1) JP3076895B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243989A (en) * 1999-02-18 2000-09-08 Dainippon Printing Co Ltd Transparent film solar-cell module
JP2004186549A (en) * 2002-12-05 2004-07-02 Fuji Electric Holdings Co Ltd Method for manufacturing solar battery module
JP2006179961A (en) * 2006-03-28 2006-07-06 Sanyo Electric Co Ltd Solar cell module
US8124870B2 (en) 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
WO2012053042A1 (en) * 2010-10-19 2012-04-26 Fujifilm Corporation Solar cell module and method of manufacturing the same
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243989A (en) * 1999-02-18 2000-09-08 Dainippon Printing Co Ltd Transparent film solar-cell module
JP2004186549A (en) * 2002-12-05 2004-07-02 Fuji Electric Holdings Co Ltd Method for manufacturing solar battery module
JP2006179961A (en) * 2006-03-28 2006-07-06 Sanyo Electric Co Ltd Solar cell module
JP4511485B2 (en) * 2006-03-28 2010-07-28 三洋電機株式会社 Solar cell module
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US8124870B2 (en) 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
WO2012053042A1 (en) * 2010-10-19 2012-04-26 Fujifilm Corporation Solar cell module and method of manufacturing the same

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