JPS60116784A - Apparatus for producing deposited film by electric discharge - Google Patents

Abstract

PURPOSE:To form stably deposited films without the need for adjusting impedance matching in the stage of forming various kinds of deposited films on the surface of a base body by electric discharge by providing heating and cooling means and control means for said means to the inside wall of a deposition chamber. CONSTITUTION:A base body 102 to be formed thereon with a deposited film is disposed in a deposition chamber 101 and thereafter the inside of the chamber is evacuated to a reduced pressure. The body 102 is preliminarily heated to a prescribed temp. by a heater 103 and a gaseous raw material for forming the deposition chamber is supplied into the chamber 101. A high-frequency voltage is impressed between an electrode 106 for electric discharge provided to the inside wall of the chamber 101 and the body 102 to generate electric discharge, thereby converting the gaseous raw material to plasma and forming the deposited film such as photoconductive film, semiconductor film or the like on the base body. The temp. of the electrode 106 is measured by an IR monitor 109 and a heater 107 or cooling water pipe 108-1 is adjusted by a temp. controller 112 to maintain the specified temp. of the electrode 106. The deposited film is formed stably without the need for impedance matching of the electric discharge.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing apparatus for manufacturing an organic resin film by electric discharge or the like.

Due to discharge such as high frequency glow discharge or arc discharge,
Methods are already known in which a source gas introduced into a deposition chamber under reduced pressure is activated, decomposed or reacted, and a film of a single element or compound is deposited on a substrate from the gas or product gas. Moreover, this method allows compounds that are difficult to obtain through normal chemical reactions, as well as single element 11(
: A laminated film can be obtained. Also, this kind of xmi masturbation
In a deposited film manufacturing apparatus using h* radiation, the speed of forming a deposited film from the raw material gas is increased by supplying a large amount of raw material gas and applying high-output high-frequency power.

To obtain this effect, for example, the frequency 1 3, 56 M
H. y. .

It is necessary to input high-frequency power of 100 to i'ooow, but when such high-output high-frequency power is input,
The interior walls of the deposition chamber are heated by the discharge energy or by the discharge energy and thermal energy.

In particular, when the reactor is operated in large quantities and for a long period of time, the temperature of the inner wall of the deposition chamber may reach 300° C. or higher.

Conversely, when there is a large supply layer of raw material gas, the inner wall of the deposition chamber is cooled, and the temperature of the inner wall of the deposition chamber decreases by 6llIX degrees. When the temperature on the walls of the deposition chamber changes in this way, the impedance inside the deposition chamber changes, and the impedance matching of the discharge to xxi''x'h must be adjusted. A deposited film is formed on one substrate, causing deterioration of film quality characteristics and non-uniformity.

However, impedance matching is usually performed at the design stage, and it is very difficult to adjust impedance matching in response to impedance that changes successively.

An object of the present invention is to provide an apparatus for producing a deposited film by electric discharge, which can form a deposited film under certain conditions without adjusting impedance matching.

This objective is achieved by the following manufacturing equipment.

A production device that forms a deposited film by electrical discharge in a deposition chamber that can be reduced in pressure, and is characterized by providing heating means, cooling means, and means for controlling them on the inside and/or outside of the walls of the deposition chamber. A device for producing deposited films using high-frequency & large-kid discharge.

The heating means and cooling means of the present invention include providing a cooling chamber and a heating chamber in contact with a part or the whole of the inner and/or outer inner wall of the deposition chamber, or installing a coil therein.
It can take various shapes, such as providing one to several pipes or using a mesh.

The temperature of the inner wall is monitored by a temperature monitor, and a temperature control device issues heating and cooling instructions to ensure a predetermined temperature at all times.

Temperature adjustment can be done by flowing water, air, etc. through the temperature adjustment device to perform heating and cooling, or only cooling can be performed. Heating is performed by flowing oil or the like through the cooling device and heating device, respectively. Moreover, a heating wire can also be used for heating.

By the way, apparatuses for producing deposited films by discharging to high frequency ** can be roughly divided into inductive coupling type apparatuses and quantitative coupling type apparatuses. The former is a device in which a high-frequency coil connected to a high-frequency power supply is arranged, high-level lJl power is fed to the coil, gas is turned into plasma by electromagnetic energy, and a deposited film is produced on a substrate. On the other hand, in the latter method, a cathode electrode is placed in a space surrounding the deposition chamber of the reactor, an anode electrode is placed inside the deposition chamber, and a direct current or alternating current electric field is applied between the two electrodes while gas is flowing between the two electrodes. This is a device that applies a gas to turn the raw material gas into plasma to produce a deposited film on a substrate. The invention is applicable to either type of device.

Embodiments of the apparatus according to the present invention will be described with reference to the drawings. FIG. 1 shows an apparatus for producing a deposited film using high frequency glow discharge according to the present invention. In the figure, 101 is a deposition chamber that can be reduced in pressure. Inside the deposition chamber 101, a cylindrical substrate 102 for forming a deposited film and a substrate heater 106 for heating the substrate 102 are provided. An exhaust port 105 is provided so that the inside of the deposition chamber 101 is evacuated to a predetermined degree of vacuum by an exhaust device (not shown). A base 102 and an electrode 106 for causing glow discharge are provided as the inner wall of the deposition chamber 101. In the apparatus shown in the figure, the base 102 is connected to ground and rotated to make the film quality uniform.

The electrode 106 is connected to a high frequency power source via a matching circuit (not shown). There are an electrode heater 107 and a cooling vibrator 1oa-i on the outside of the electrode 106, and a temperature controller 2-11 is installed to maintain a constant temperature according to the electrode temperature measured by a non-contact infrared temperature monitor 109.
2, heating and cooling are controlled by the heater power and the amount of cooling fluid. A gas introduction pipe 110 for introducing source gas is connected to the upper part of the deposition chamber 101. The base 102 is heated in advance to a predetermined appropriate temperature by a base heater 106 . In addition, the electrode 106
is heated in advance to a predetermined appropriate temperature by the electrode heater 107.

The present invention is a hydrogenated amorphous silicon film, C9N, O
It can be applied to the production of amorphous silicon films containing Group I elements such as , B, and Group V elements such as P, and can produce deposited films with uniform film quality that have excellent dark resistance and photoconductive properties. .

Also, 5t3N4 + SiC+ 5i02, si
This method can also be applied to the production of insulating films such as O, etc., and films with good insulating properties can be obtained.

Example 1 Using the deposited film manufacturing apparatus shown in FIG.
40 volume% + H295-60 volume% mixed gas II
Hydrogenated amorphous silicon (a-3
iH) A membrane was produced. The substrate is heated to 200 to 400° in advance, and the raw material gas is heated to a pressure of about 2 torr,
The gas was introduced from the gas introduction pipe 110 at a gas flow rate of 0.1 to 21/hr. Electrode heater 107 and cooling pipe 108-
While controlling the electrode temperature to 0 to 250° by flowing water through the substrate 1, glow discharge was generated to form an a-SiH film on the substrate 1D-2.

There was no mismatching during film formation, and the manufactured a-8iH
The film had excellent dark resistance and photoconductive properties, and was uniform in quality.

Embodiment 2 The apparatus shown in FIG. 2 is provided with an electrode temperature control chamber 108-2 containing an electrode heater 107 in place of the cooling pipe 108-1 in FIG. The heater 107 performs cooling by flowing air into the electrode temperature control chamber 108-2. The numbers in the figure indicate the same parts as in FIG. 1 with the same numbers.

Using the deposited film manufacturing apparatus shown in Fig. 2, 5iH45~
An a-8iH film was manufactured using a mixed gas of 40% by volume and 95 to 60% by volume of H2 as a raw material gas. 200mm base material in advance
Heat the raw material gas to ~400° and reduce the gas pressure to 0-1~
2 torr + gas flow @ 0.1~21! Gas was introduced from pipe 110 at a rate of 1/hr. Electrode heater 10
7 and the electrode temperature control chamber 108-2 to adjust the electrode temperature to 0 to 250°, glow discharge was generated to form an a-3iH film on the substrate 102.

There was no mismatching during film formation, and the manufactured a-8iH
The film had excellent dark resistance and photoconductive properties, and was uniform in quality.

Example 3 The apparatus shown in FIG. 6 is an example of an apparatus in which an electrode 106 is provided so as to surround a deposition chamber, and an electrode temperature control chamber 108-2 similar to that in Example 2 is provided inside the electrode 106 (on the substrate side). It is.

5iH45~4 using the deposited film manufacturing apparatus shown in Figure 6.
An a-8iH film was manufactured using a mixed gas of 0% by volume and 95% to 60% by volume of H2 as a raw material gas. 200mm base material in advance
Heat the raw material gas to ~400° and reduce the gas pressure to 0.1~
2 LQrr I gas was introduced from the gas introduction pipe 110 at a flow rate of 0.1 to 21/hr. An a-8iH film was formed on the substrate 102 by generating glow discharge while adjusting the electrode temperature to 0 to 250° by flowing air through the electrode heater 107 and the electrode temperature control chamber 108-2.

There was no mismatching during film formation, and the manufactured a-8iH
The film had excellent dark resistance and photoconductive properties, and was uniform in quality.

[Brief explanation of drawings]

FIGS. 1, 2, and 6 show the vertical If ratio of the deposited film of the present invention.
This is a song diagram. 101...Deposition chamber 102...Cylindrical substrate 103...Substrate heater 104...Main valve 105...Exhaust port 106... ... Electrode 107 ... Electrode heater 108-1 ... Cooling pipe 108-2 ... Electrode temperature control chamber 109 ... Infrared temperature monitor 110 ... Gas introduction pipe 112...Temperature controller +12 Fig. 1 Fig. 2

Claims (1)

[Claims] A manufacturing apparatus for forming a deposited film by electric discharge in a deposition chamber which can be reduced in pressure, characterized in that a heating means, a cooling means, and a means for controlling them are provided inside and/or outside the wall of the deposition chamber. A device for producing deposited films using 1% discharge.